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1. 发明授权

EP0878026B1 LEUCHTDIODENMATRIX 失效
公开(公告)号：EP0878026B1
公开(公告)日：2002-07-24
申请号：EP97907037.2
申请日：1997-01-31
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： GRAMANN, Wolfgang , SPÄTH, Werner , WAITL, Günther , BRUNNER, Herbert
IPC分类号： H01L25/075 , H01L33/00
CPC分类号： H01L33/38 , G09F9/33 , H01L24/32 , H01L25/0753 , H01L33/40 , H01L33/62 , H01L2924/09701 , H01L2924/10253 , H01L2924/00
摘要： The invention concerns an LED device (1) comprising at least one LED chip (2), wherein front contact plating (8) is disposed on a light outlet surface of a light-emitting body (5) and rear contact plating (6) is disposed on a side of the light-emitting body (5) lying opposite the light outlet surface. The LED chip (2) is disposed between a first (15) and a second strip conductor carrier (31), the first strip conductor (15) being transparent and comprising at least one first electrical conductor (16) which contacts the front contact plating (8), and the second strip conductor carrier (31) comprising at least one second electrical conductor (13) which contacts the rear contact plating (6). The LED device (1) according to the invention has inter alia the particular advantage that the size of the LED chip (2) is reduced with respect to conventional LED devices and hence the beam density can be increased.
摘要翻译：本发明涉及一种包括至少一个LED芯片（2）的LED器件（1），其中前接触镀层（8）设置在发光体（5）的光出口表面上并且后接触镀层（6）是设置在发光体（5）的与光出口表面相对的一侧上。所述LED芯片（2）设置在第一带状导体载体（15）和第二带状导体载体（31）之间，所述第一带状导体（15）是透明的并且包括至少一个第一导电体（16）（8），并且所述第二带状导体载体（31）包括与所述后接触镀层（6）接触的至少一个第二电导体（13）。根据本发明的LED装置（1）尤其具有特定的优点，即相对于常规的LED装置，LED芯片（2）的尺寸减小并且因此可以增加光束密度。

2. 发明授权

EP1177605B1 LASERDIODENVORRICHTUNG UND HERSTELLUNGSVERFAHREN 有权
公开(公告)号：EP1177605B1
公开(公告)日：2005-10-05
申请号：EP00987065.0
申请日：2000-11-02
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： LUFT, Johann , ACKLIN, Bruno , HEERLEIN, Jörg , SCHLERETH, Karl-Heinz , SPÄTH, Werner , SPIKA, Zeljko , HANKE, Christian , KORTE, Lutz , EBELING, Karl , BEHRINGER, Martin
IPC分类号： H01S5/022 , H01S5/40
CPC分类号： H01L33/486 , H01L25/0756 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01S5/02228 , H01S5/02244 , H01S5/02292 , H01S5/3095 , H01S5/4043 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.
摘要翻译：本发明涉及一种具有安装在用于发光二极管的壳体（1）中的激光二极管芯片（4）的激光二极管器件。所述激光二极管芯片（4）被构造为多光束激光二极管（L1，L2），其端子与LED壳体的端子相连。

3. 发明公开

EP1328976A1 LED-MODUL 有权
标题翻译： LED模块
公开(公告)号：EP1328976A1
公开(公告)日：2003-07-23
申请号：EP01987949.3
申请日：2001-10-09
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： MARCHL, Werner , SPÄTH, Werner , WAITL, Günter
IPC分类号： H01L27/15 , H01L33/00
CPC分类号： H01L25/0753 , H01L24/73 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/01019 , H01L2924/01068 , H01L2924/12041 , Y10S362/80 , H01L2924/00012
摘要： The invention relates to an LED module (1), comprising a support (2), which contains a semiconductor layer (5) and which has an even main surface on which a plurality of LED semiconductor bodies (11) are mounted. The LED semiconductor bodies (11) that are used preferably emit light of different central wavelengths during operation, so that the LED module (1) is suitable for producing mixed colour light and especially for producing white light.

4. 发明公开

EP1320890A2 STRAHLUNGSQUELLE UND VERFAHREN ZUR HERSTELLUNG EINER LINSENFORM 审中-公开
标题翻译：维多利亚州立大学林肯大学
公开(公告)号：EP1320890A2
公开(公告)日：2003-06-25
申请号：EP01956408.7
申请日：2001-07-30
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： BOGNER, Georg , GRAMANN, Wolfgang , KROMOTIS, Patrick , MARCHL, Werner , SPÄTH, Werner , WAITL, Günter
IPC分类号： H01L25/075 , F21V5/00 , G02B3/00 , B29D11/00
CPC分类号： G02B3/0031 , B29D11/00278 , B29D11/00365 , F21V5/04 , F21Y2115/10 , G02B3/0056 , H01L25/0753 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2924/01019 , H01L2924/12041 , H01L2924/1815 , H01L2924/19041 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： The invention relates to a radiation source, which has an assembly of semiconductor chips that are positioned beneath a field of micro-lenses (8) arranged in a hexagonal lattice structure. The radiation source is characterised by a high radiation output and a high radiation density.
摘要翻译：辐射源具有设置在六边形格子结构中的微透镜（8）的场下方的半导体芯片的场。辐射源的特征在于高辐射输出和辐射密度。

5. 发明授权

EP1112612B1 ANORDNUNG MIT LICHTEMITTIERENDEM LEISTUNGSHALBLEITERBAUELEMENT SOWIE VERFAHREN ZUR HERSTELLUNG DERSELBEN 有权
标题翻译：安排发光功率半导体元件和方法生产同样
公开(公告)号：EP1112612B1
公开(公告)日：2002-11-27
申请号：EP99953663.4
申请日：1999-09-01
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： ACKLIN, Bruno , SPÄTH, Werner , GRÖTSCH, Stefan
IPC分类号： H01S5/022 , G02B6/42
CPC分类号： G02B6/4249 , G02B6/4253 , G02B6/4263 , G02B6/4268 , G02B6/4269 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01S5/02244 , H01S5/02272 , H01S5/02469 , H01S5/4025 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting power semiconductor component (3) is mounted on a metal support structure (1) forming good heat transfer contact. A plastic protective body (9) surrounds the power semiconductor component (3) in the form of a cap by forming a recess for a light exiting area (8).

6. 发明授权

EP0890122B1 VERFAHREN ZUM HERSTELLEN EINES WELLENLEITER-STRAHLUMSETZERS 失效
标题翻译：一种用于生产纤维射线变换
公开(公告)号：EP0890122B1
公开(公告)日：2002-09-25
申请号：EP97916353.2
申请日：1997-03-21
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： SCHNEIDER, Hartmut , SPÄTH, Werner , GRÖTSCH, Stefan
IPC分类号： G02B6/13 , G02B6/136 , G02B6/42
CPC分类号： G02B6/4249 , G02B6/122 , G02B6/136
摘要： The invention relates to a process for producing a waveguide beam converter for converting a laser beam. A plurality of waveguides (3-7) is manufactured and arranged in such a manner that at least one individual laser beam is fed into each waveguide. The waveguides (3-7) are initially manufactured on a substrate (1) by the planar process, and one part of their length is subsequently detached from the substrate, starting from the beam emission ends. The free ends are subsequently arranged and fixed to correspond to a provided emitted beam arrangement of the emitted laser beam (10).

7. 发明公开

EP1177605A2 LASERDIODENVORRICHTUNG UND VERFAHREN ZU DEREN HERSTELLUNG 有权
标题翻译：二极管器件及方法
公开(公告)号：EP1177605A2
公开(公告)日：2002-02-06
申请号：EP00987065.0
申请日：2000-11-02
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： LUFT, Johann , ACKLIN, Bruno , HEERLEIN, Jörg , SCHLERETH, Karl-Heinz , SPÄTH, Werner , SPIKA, Zeljko , HANKE, Christian , KORTE, Lutz , EBELING, Karl , BEHRINGER, Martin
IPC分类号： H01S5/022 , H01S5/40
CPC分类号： H01L33/486 , H01L25/0756 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/181 , H01S5/02228 , H01S5/02244 , H01S5/02292 , H01S5/3095 , H01S5/4043 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： The invention relates to a laser diode device with a laser diode chip (4) that is mounted in a housing (1) for a light-emitting diode. Said laser diode chip (4) is structured as a multi-beam laser diode (L1, L2) the terminals of which are linked with the terminal of the LED housing.

8. 发明公开

EP1151344A1 LASERSTRAHLUNGSQUELLE UND VERFAHREN ZUM ERZEUGEN EINES KOHÄRENTEN GESAMTLASERSTRAHLUNGSFELDES 有权
标题翻译：激光辐射源，用于产生一致的全面激光辐射场
公开(公告)号：EP1151344A1
公开(公告)日：2001-11-07
申请号：EP00969444.9
申请日：2000-10-06
申请人： DLR Deutsches Zentrum für Luft- und Raumfahrt e.V. , Osram Opto Semiconductors GmbH & Co. OHG , UNIVERSITÄT STUTTGART INSTITUT FÜR STRAHLWERKZEUGE
发明人： BISSINGER, Norbert , BRAUCH, Uwe , HERGENHAN, Guido , OPOWER, Hans , SCHOLL, Marcus , LÜCKE, Bernd , SPÄTH, Werner
IPC分类号： G02B27/09 , H01S5/40 , H01S5/42
CPC分类号： H01S5/4025 , G02B27/09 , H01S5/005 , H01S5/042 , H01S5/0425 , H01S5/0683 , H01S5/4006 , H01S5/4081 , H01S5/423
摘要： The invention relates to a laser radiation source comprising an arrangement of N individual slave laser diodes in a predetermined surface, a slave current supply for the slave laser diodes, a master laser diode for generating a master laser radiation, a master current supply for the master laser diode and coupling optics by means of which the master laser radiation can be coupled to the individual slave laser diodes. The aim of the invention is to operate said laser radiation source in a phase-locked manner at the frequency of the master laser diode and to improve transformation optics which combine the slave laser radiation of the individual slave laser diodes to form a coherent and entire laser radiation field with essentially flat wave fronts, in such a way that the slave laser diodes can be adjusted in relation to one another by means of the alignability of the current supply networks and can thus be operated in a stable manner in relation to one another. To this end, the slave current supply for each slave laser diode is provided with an own current supply network. Each current supply network can be aligned in relation to each other and with regard to the current that is supplied to the respective slave laser diode during a certain operating period for adjusting the slave laser diodes. The current supply networks are switched in parallel and are fed by a shared source.

9. 发明公开

EP1112612A1 ANORDNUNG MIT LICHTEMITTIERENDEM LEISTUNGSHALBLEITERBAUELEMENT SOWIE VERFAHREN ZUR HERSTELLUNG DERSELBEN 有权
标题翻译：安排发光功率半导体元件和方法生产同样
公开(公告)号：EP1112612A1
公开(公告)日：2001-07-04
申请号：EP99953663.4
申请日：1999-09-01
申请人： Osram Opto Semiconductors GmbH & Co. OHG
发明人： ACKLIN, Bruno , SPÄTH, Werner , GRÖTSCH, Stefan
IPC分类号： H01S5/022 , G02B6/42
CPC分类号： G02B6/4249 , G02B6/4253 , G02B6/4263 , G02B6/4268 , G02B6/4269 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01S5/02244 , H01S5/02272 , H01S5/02469 , H01S5/4025 , H01L2924/00014 , H01L2924/00
摘要： A light-emitting power semiconductor component (3) is mounted on a metal support structure (1) forming good heat transfer contact. A plastic protective body (9) surrounds the power semiconductor component (3) in the form of a cap by forming a recess for a light exiting area (8).

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