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1. 发明授权

EP2519980B1 LICHTEMITTIERENDER HALBLEITERCHIP 有权转让
公开(公告)号：EP2519980B1
公开(公告)日：2019-04-03
申请号：EP10798567.3
申请日：2010-12-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , WALTER, Alexander , TAKI, Tetsuya , OFF, Jürgen , BUTENDEICH, Rainer , HERTKORN, Joachim
IPC分类号： H01L33/04 , H01L33/14 , H01L33/06 , H01L33/38

2. 发明授权

EP2457296B1 OPTOELEKTRONISCHER HALBLEITERKÖRPER MIT EINER QUANTENTOPFSTRUKTUR 有权转让
公开(公告)号：EP2457296B1
公开(公告)日：2019-11-06
申请号：EP10735290.8
申请日：2010-07-22
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , BUTENDEICH, Rainer , TAKI, Tetsuya , OFF, Jürgen , WALTER, Alexander , MEYER, Tobias
IPC分类号： B82Y20/00 , H01S5/30 , H01S5/32 , H01S5/34 , H01S5/347 , H01L33/06 , H01L33/32 , H01S5/343

3. 发明公开

EP2465148A1 ELEKTRISCH GEPUMPTER OPTOELEKTRONISCHER HALBLEITERCHIP 有权
公开(公告)号：EP2465148A1
公开(公告)日：2012-06-20
申请号：EP10726134.9
申请日：2010-06-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , OFF, Jürgen , TAKI, Tetsuya , HERTKORN, Joachim , SABATHIL, Matthias , LAUBSCH, Ansgar , BIEBERSDORF, Andreas
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to at least one embodiment of the electrically pumped optoelectronic semiconductor chip (1) comprising at least two radioactive quantum wells (2), wherein the radioactive quantum wells (2) comprise or are made of InGaN. The optoelectronic semiconductor chip (1) further comprises at least two coatings (4) comprising or made of AlGaN. Each of the coatings (4) is associated with exactly one of the radioactive quantum wells (2). The coatings (4) are each present at a p-side of the associated radioactive quantum well (2). A distance between the radioactive quantum well (2) and the associated coating (4) is no greater than 1.5 mm.
摘要翻译：电泵浦光电子半导体芯片包括至少两个包含InGaN的辐射活性量子阱或者由它们组成。光电半导体芯片包括至少两个包括AlGaN或其组成的覆盖层。每个覆盖层被精确地分配给辐射有源量子阱中的一个。覆盖层各自位于相关联的辐射有源量子阱的p侧上。辐射有源量子阱与相关覆盖层之间的距离为1.5nm以下。

4. 发明公开

EP2457296A1 OPTOELEKTRONISCHER HALBLEITERKÖRPER MIT EINER QUANTENTOPFSTRUKTUR 有权转让
标题翻译： OPTOELEKTRONISCHERHALBLEITERKÖRPERMIT EINER QUANTENTOPFSTRUKTUR
公开(公告)号：EP2457296A1
公开(公告)日：2012-05-30
申请号：EP10735290.8
申请日：2010-07-22
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , BUTENDEICH, Rainer , TAKI, Tetsuya , OFF, Jürgen , WALTER, Alexander , MEYER, Tobias
IPC分类号： H01S5/34 , H01S5/347 , H01S5/343 , H01L33/06 , H01L33/32 , H01L33/00
摘要： The invention specifies an optoelectronic semiconductor body which contains a semiconductor material which is composed of a first component and a second component, which is different from the first component. The semiconductor body has a quantum well structure, which is arranged between an n-conducting layer (1) and a p-conducting layer (5). The quantum well structure comprises the following elements: an individual quantum well layer (31) or a layer stack (3), which comprises a plurality of quantum well layers (31) and at least one barrier layer (32), wherein a barrier layer (32) is arranged between two respective successive quantum well layers (31) and adjoins the two quantum well layers (31); an n-side terminating layer (2), which adjoins the n-conducting layer (1) and the individual quantum well layer (31) or the layer stack (3); and a p-side terminating layer (4), which is arranged between the p-conducting layer (5) and the individual quantum well layer (31) or the layer stack (3) and adjoins the layer stack (3) or the individual quantum well layer (31).
摘要翻译：提供了一种光电子半导体体，其包含由第一组分和不同于第一组分的第二组分组成的半导体材料。半导体主体包括布置在n导电层（1）和p导电层（5）之间的量子阱结构。量子阱结构由以下元件组成：由多个量子阱层（31）和至少一个势垒层（32），一个势垒层（32）和一个势垒层（32）组成的单个量子阱层31或层叠层）布置在每对连续的量子壁层（31）之间，该阻挡层邻接量子壁层（31）; 邻接n导电层（1）和单量子阱层（31）或层叠体（3）的n侧端接层（2）; 和p侧终止层（4），其布置在p导电层（5）和单量子阱层（31）或层堆叠（3）之间并与层堆叠（3）或单个量子阱层（31）。

5. 发明授权

EP2465148B1 ELEKTRISCH GEPUMPTER OPTOELEKTRONISCHER HALBLEITERCHIP 有权
标题翻译：电子调光器
公开(公告)号：EP2465148B1
公开(公告)日：2017-08-09
申请号：EP10726134.9
申请日：2010-06-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , OFF, Jürgen , TAKI, Tetsuya , HERTKORN, Joachim , SABATHIL, Matthias , LAUBSCH, Ansgar , BIEBERSDORF, Andreas
IPC分类号： H01L33/32 , H01L33/06
CPC分类号： H01L33/06 , H01L33/32 , H01L2924/0002 , H01L2924/00

6. 发明公开

EP2628191A1 VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERSCHICHTENFOLGE, STRAHLUNGSEMITTIERENDER HALBLEITERCHIP UND OPTOELEKTRONISCHES BAUTEIL 审中-公开
标题翻译：制造方法的半导体层序列，发射辐射的半导体芯片和光电子器件
公开(公告)号：EP2628191A1
公开(公告)日：2013-08-21
申请号：EP11763943.5
申请日：2011-09-30
申请人： OSRAM Opto Semiconductors GmbH
发明人： HERTKORN, Joachim , TAKI, Tetsuya , OFF, Jürgen
IPC分类号： H01L33/00 , H01L33/22 , H01L33/16
CPC分类号： H01L33/24 , H01L33/007 , H01L33/0079 , H01L33/16 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a method for producing a semiconductor layer sequence, which is based on a nitride compound semiconductor material and which comprises a microstructured outer surface, to a semiconductor chip produced using said method, and to an optoelectronic component comprising such a semiconductor chip. The method has the following steps: A) growing at least one first semiconductor layer of the semiconductor layer sequence on a substrate; B) applying an etch-resistant layer on the first semiconductor layer; C) growing at least one further semiconductor layer on the layer sequence obtained in step B); D) separating the semiconductor layer sequence from the substrate, a separating zone of the semiconductor layer sequence being at least partly removed; E) etching the obtained separating surface of the semiconductor layer sequence by means of an etching means such that a microstructuring of the first semiconductor layer is carried out and the microstructured outer surface is formed.

7. 发明公开

EP2519980A1 LICHTEMITTIERENDER HALBLEITERCHIP 有权转让
公开(公告)号：EP2519980A1
公开(公告)日：2012-11-07
申请号：EP10798567.3
申请日：2010-12-27
申请人： OSRAM Opto Semiconductors GmbH
发明人： PETER, Matthias , MEYER, Tobias , WALTER, Alexander , TAKI, Tetsuya , OFF, Jürgen , BUTENDEICH, Rainer , HERTKORN, Joachim
IPC分类号： H01L33/04 , H01L33/14 , H01L33/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a semiconductor chip (1) comprising a semiconductor body (2) having a semiconductor layer sequence. An active region (20) used to generate radiation is arranged between an n-conductive multi-layer structure (21) and a p-conductive semiconductor layer (22). The n-conductive multi-layer structure contains a doping profiled element comprising at least one doping tip (4).
摘要翻译：半导体芯片包括具有半导体层序列的半导体本体。用于产生辐射的有源区域布置在n导电多层结构和p导电半导体层之间。在包括至少一个掺杂峰的n导电多层结构中形成掺杂分布。

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