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1. 发明授权

EP2565922B1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP2565922B1
公开(公告)日：2020-04-01
申请号：EP11775053.9
申请日：2011-04-27
申请人： NISSAN MOTOR CO., LTD.
发明人： YAMAGAMI, Shigeharu , HAYASHI, Tetsuya , SUZUKI, Tatsuhiro
IPC分类号： H01L29/78 , H01L29/872 , H01L29/12 , H01L29/47

2. 发明授权

EP3300234B1 POWER CONVERSION DEVICE 有权
公开(公告)号：EP3300234B1
公开(公告)日：2019-08-21
申请号：EP15893221.0
申请日：2015-05-22
申请人： Nissan Motor Co., Ltd.
发明人： ZUSHI, Yusuke , SUZUKI, Tatsuhiro , NUMAKURA, Keiichiro , SHIMOMURA, Taku , HAYASHI, Tetsuya
IPC分类号： H02M1/088 , H02M1/08 , H02M7/537 , H02M7/217 , H03K17/14

3. 发明公开

EP3300234A1 POWER CONVERSION DEVICE 有权
标题翻译：电力转换装置
公开(公告)号：EP3300234A1
公开(公告)日：2018-03-28
申请号：EP15893221.0
申请日：2015-05-22
申请人： Nissan Motor Co., Ltd.
发明人： ZUSHI, Yusuke , SUZUKI, Tatsuhiro , NUMAKURA, Keiichiro , SHIMOMURA, Taku , HAYASHI, Tetsuya
IPC分类号： H02M1/08 , H02M1/00
CPC分类号： H02M1/08 , H02M1/088 , H02M5/4585 , H02M7/217 , H02M7/48 , H02M7/537 , H02M2001/0006 , H03K17/0822 , H03K17/122 , H03K17/165 , H03K17/567 , H03K2217/0081
摘要： A power conversion device includes a gate voltage adjustment unit (a detection circuit 12) which acts on a drive signal from a gate drive circuit 11 that sends a drive signal to the respective gates of a plurality of semiconductor elements Q1 to Q2 provided in parallel, and which adjusts the gate voltages of the semiconductor elements. The gate voltage adjustment unit superimposes an induction voltage generated on the basis of a difference between a magnetic flux due to a current flowing through one of the plurality of semiconductor elements and a magnetic flux due to a current flowing through each of the other semiconductor elements, onto a gate voltage sent to at least one gate of the plurality of semiconductor elements.
摘要翻译：功率转换装置包括：栅极电压调节单元（检测电路12），其作用于来自栅极驱动电路11的驱动信号，栅极驱动电路11将驱动信号发送到并联设置的多个半导体元件Q1至Q2的各个栅极，并调节半导体元件的栅极电压。栅极电压调整单元将基于流过多个半导体元件中的一个半导体元件的电流的磁通与由于流过其他半导体元件中的每个半导体元件的电流引起的磁通之间的差异而生成的感应电压叠加，到发送到多个半导体元件中的至少一个栅极的栅极电压。

4. 发明公开

EP2565922A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：EP2565922A1
公开(公告)日：2013-03-06
申请号：EP11775053.9
申请日：2011-04-27
申请人： Nissan Motor Co., Ltd
发明人： YAMAGAMI, Shigeharu , HAYASHI, Tetsuya , SUZUKI, Tatsuhiro
IPC分类号： H01L27/04 , H01L21/336 , H01L29/12 , H01L29/47 , H01L29/78 , H01L29/872
CPC分类号： H01L21/8213 , H01L21/046 , H01L21/0485 , H01L21/823487 , H01L27/0727 , H01L29/0619 , H01L29/0696 , H01L29/0865 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/6606 , H01L29/66068 , H01L29/7806 , H01L29/7813 , H01L29/861 , H01L29/872
摘要： An object of the invention is to reduce distance between each pair of adjacent insulating gate portions and thereby miniaturize a semiconductor device. A drift region is provided on a semiconductor substrate; first well regions are provided in upper part of the drift region; and source regions are provided in upper part of the first well regions. Each insulating gate portion forms a channel (a inversion layer) in part of the first well region located between the drift region and source region. A first main electrode forms junctions with part of the drift region exposed in the major surface to constitute unipolar diodes and is connected to the first well regions and the source regions. The plurality of insulating gate portions have linear patterns parallel to each other when viewed in the normal direction of the major surface. Between each pair of adjacent insulating gate portions, junction portions in which the first main electrode forms junctions with the drift region and the first well regions are arranged along the direction that the insulating gate portions extend. The channels are formed at least in the normal direction of the major surface.
摘要翻译：本发明的目的是减小每对相邻的绝缘栅极部分之间的距离，从而使半导体器件小型化。漂移区域设置在半导体衬底上; 第一阱区设置在漂移区的上部; 并且在第一阱区的上部提供源极区。每个绝缘栅极部分在位于漂移区和源极区之间的第一阱区的一部分中形成沟道（反型层）。第一主电极与在主表面中暴露的漂移区的一部分形成结以构成单极二极管并连接到第一阱区和源极区。当在主表面的法线方向上观察时，多个绝缘栅极部分具有彼此平行的线性图案。在每对相邻的绝缘栅极部分之间，第一主电极与漂移区域和第一阱区域形成结的结部分沿着绝缘栅极部分延伸的方向布置。通道至少在主表面的法线方向上形成。

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