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1. 发明公开

EP2960925A1 COMPOSITE SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：复合基板，半导体元件和方法的半导体元件
公开(公告)号：EP2960925A1
公开(公告)日：2015-12-30
申请号：EP14754763.2
申请日：2014-02-18
申请人： NGK Insulators, Ltd.
发明人： IDE, Akiyoshi , TAKAGAKI, Tatsuro , MIYAZAWA, Sugio , HORI, Yuji , TAI, Tomoyoshi , HATTORI, Ryosuke
IPC分类号： H01L21/02 , H01L21/683 , H03H3/08 , H03H9/145 , H03H9/25
CPC分类号： H01L21/6835 , B32B7/02 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B18/00 , B32B27/08 , B32B27/20 , B32B27/283 , B32B37/10 , B32B38/10 , B32B2264/105 , B32B2307/20 , B32B2307/206 , B32B2307/538 , B32B2309/02 , B32B2309/105 , B32B2457/00 , B32B2457/14 , H01L21/78 , H01L41/1873 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/25 , Y10T428/12597
摘要： A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.
摘要翻译：的复合衬底10包括半导体衬底12和绝缘支撑基板14也被层压在一起。支承基板14包括第一和第二基板14a和14b与强度相同的材料制成的并结合在一起做允许第一和第二基板14a和14b从海誓山盟用刀片分离。半导体基板12层叠在第一基板14a的相反侧的表面键合到第二基片14b的表面上。

2. 发明授权

EP2787638B1 COMPOSITE SUBSTRATE 有权
标题翻译：复合基材
公开(公告)号：EP2787638B1
公开(公告)日：2016-03-30
申请号：EP13840126.0
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： TAI, Tomoyoshi , IWASAKI, Yasunori , HORI, Yuji , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H03H9/25 , H01L41/312
CPC分类号： H01L41/0838 , H01L41/053 , H01L41/312 , H03H9/02574

3. 发明公开

EP2787637A1 COMPOSITE SUBSTRATE AND MANUFACTURING M ETHOD THEREOF 有权
标题翻译： VERBUNDSUBSTRAT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2787637A1
公开(公告)日：2014-10-08
申请号：EP13840125.2
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： HORI, Yuji , TAI, Tomoyoshi , IWASAKI, Yasunori , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H03H9/25 , H03H3/08
CPC分类号： H01L41/0838 , H01L41/312 , H03H9/02574
摘要： The present invention provides a composite substrate comprising a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer containing argon and joining together the piezoelectric substrate and the support substrate. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element of the piezoelectric substrate than the second and third layers, the third layer contains a larger amount of a constituent element of the support substrate than the first and second layers, and the second layer contains a larger amount of argon than the first and third layers.
摘要翻译：本发明提供一种复合基板，其包括作为单晶钽酸锂或铌酸锂基板的压电基板，作为单晶硅基板的支撑基板和含有氩的非晶层并将压电基板与支撑基板。从压电基板向复合基板依次包括第一层，第二层和第三层。第一层包含比第二层和第三层更大量的压电基板的构成元件，第三层包含比第一层和第二层更大量的支撑衬底的构成元件，并且第二层包含比第一和第三层更大量的氩。

4. 发明授权

EP2736169B1 COMPOSITE SUBSTRATE, ELASTIC SURFACE WAVE DEVICE, AND METHOD FOR PRODUCING COMPOSITE SUBSTRATE 有权
标题翻译：复合基材，为了制造基片可弯曲声表面波器件和方法
公开(公告)号：EP2736169B1
公开(公告)日：2016-09-14
申请号：EP13821781.5
申请日：2013-07-12
申请人： NGK Insulators, Ltd.
发明人： HORI, Yuji , HATTORI, Ryosuke , TAI, Tomoyoshi
IPC分类号： H03H3/08 , H03H9/02 , H03H9/05 , H01L41/312
CPC分类号： H03H9/64 , C04B37/02 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/02574 , H03H9/02622 , H03H9/02866 , H03H9/0538 , H03H9/059 , H03H9/0595 , H03H9/145 , H03H9/25

5. 发明授权

EP2960925B1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：EP2960925B1
公开(公告)日：2018-04-25
申请号：EP14754763.2
申请日：2014-02-18
申请人： NGK Insulators, Ltd.
发明人： IDE, Akiyoshi , TAKAGAKI, Tatsuro , MIYAZAWA, Sugio , HORI, Yuji , TAI, Tomoyoshi , HATTORI, Ryosuke
IPC分类号： H01L21/02 , H01L21/683 , H03H3/08 , H03H9/145 , H03H9/25
CPC分类号： H01L21/6835 , B32B7/02 , B32B7/06 , B32B7/12 , B32B9/005 , B32B9/04 , B32B18/00 , B32B27/08 , B32B27/20 , B32B27/283 , B32B37/10 , B32B38/10 , B32B2264/105 , B32B2307/20 , B32B2307/206 , B32B2307/538 , B32B2309/02 , B32B2309/105 , B32B2457/00 , B32B2457/14 , H01L21/78 , H01L41/1873 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/25 , Y10T428/12597
摘要： A composite substrate 10 includes a semiconductor substrate 12 and an insulating support substrate 14 that are laminated together. The support substrate 14 includes first and second substrates 14a and 14b made of the same material and bonded together with a strength that allows the first and second substrates 14a and 14b to be separated from each other with a blade. The semiconductor substrate 12 is laminated on a surface of the first substrate 14a opposite a surface thereof bonded to the second substrate 14b.

6. 发明授权

EP2787637B1 COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：复合基板及其制造方法
公开(公告)号：EP2787637B1
公开(公告)日：2016-03-30
申请号：EP13840125.2
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： HORI, Yuji , TAI, Tomoyoshi , IWASAKI, Yasunori , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H01L41/02
CPC分类号： H01L41/0838 , H01L41/312 , H03H9/02574

7. 发明公开

EP2787638A1 COMPOSITE SUBSTRATE 有权
标题翻译：复合材料基材
公开(公告)号：EP2787638A1
公开(公告)日：2014-10-08
申请号：EP13840126.0
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： TAI, Tomoyoshi , IWASAKI, Yasunori , HORI, Yuji , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H03H9/25 , H03H9/145
CPC分类号： H01L41/0838 , H01L41/053 , H01L41/312 , H03H9/02574
摘要： A composite substrate according to the present invention includes a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate. The amorphous layer contains 3 to 14 atomic percent of argon. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element (such as tantalum) of the piezoelectric substrate than the second and third layers. The third layer contains a larger amount of a constituent element (silicon) of the support substrate than the first and second layers. The second layer contains a larger amount of argon than the first and third layers.
摘要翻译：根据本发明的复合基板包括：作为单晶钽酸锂或铌酸锂基板的压电基板，作为单晶硅基板的支撑基板和将压电基板和支撑基板接合在一起的非晶层。无定形层含有3至14原子百分比的氩。非晶层从压电基板朝向复合基板依次包括第一层，第二层和第三层。第一层含有比第二层和第三层更大量的压电基片的组成元素（如钽）。与第一层和第二层相比，第三层含有更多的支撑基板的构成元素（硅）。第二层含有比第一层和第三层更大量的氩。

8. 发明公开

EP2736169A1 COMPOSITE SUBSTRATE, ELASTIC SURFACE WAVE DEVICE, AND METHOD FOR PRODUCING COMPOSITE SUBSTRATE 有权
标题翻译：复合基材，为了制造基片可弯曲声表面波器件和方法
公开(公告)号：EP2736169A1
公开(公告)日：2014-05-28
申请号：EP13821781.5
申请日：2013-07-12
申请人： NGK Insulators, Ltd.
发明人： HORI, Yuji , HATTORI, Ryosuke , TAI, Tomoyoshi
IPC分类号： H03H9/145 , C04B37/02 , H03H3/08 , H03H9/25
CPC分类号： H03H9/64 , C04B37/02 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/02574 , H03H9/02622 , H03H9/02866 , H03H9/0538 , H03H9/059 , H03H9/0595 , H03H9/145 , H03H9/25
摘要： In a composite substrate 10, a bonding surface 21 of a piezoelectric substrate 20 is an irregular surface which is partially planarized. The irregular surface which is partially planarized includes a plurality of protrusions 23, each having a flat portion 25 on the tip thereof. The piezoelectric substrate 20 and the supporting substrate 30 are directly bonded to each other at the flat portions 25. By forming the bonding surface 21 into an irregular surface (rough surface) and providing flat portions 25 at the same time, it is possible to secure a sufficient contact area between the piezoelectric substrate 20 and the supporting substrate 30. Accordingly, in the composite substrate in which the piezoelectric substrate 20 and the supporting substrate 30 are bonded to each other, the bonding surface 21 can be roughened and direct bonding can be performed. Furthermore, it is possible to obtain a surface acoustic wave device in which heat resistance is enhanced by performing direct bonding without using an adhesive, and also bulk waves are scattered because of the roughened bonding surface, thus improving characteristics.
摘要翻译：在复合基板10，压电基片20的贴合面21是不规则的表面的所有被部分平坦化。不规则表面的所有其被平坦化部分包括：突起23，其各自具有在前端的平坦部25种的多元性。压电基板20和支撑基板30在平坦部分25直接键合到彼此通过形成粘贴面21成不规则表面（粗糙表面），并在同一时间提供平坦部25，所以能够确保压电基板20和支撑基板之间的足够的接触面积30。因此，在将压电基板20和支撑基板30彼此接合的复合衬底，接合表面21可以被粗糙化，直接结合可以是执行。进一步，有可能获得其中耐热性的表面声波器件是通过不使用粘接剂上执行直接粘结增强，因此体波被散射由于粗糙接合面，从而提高特性。

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