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1. 发明公开

EP3176948A4 ELASTIC WAVE ELEMENT, FILTER ELEMENT, AND COMMUNICATION DEVICE 有权转让
公开(公告)号：EP3176948A4
公开(公告)日：2018-03-28
申请号：EP15827302
申请日：2015-07-30
申请人： KYOCERA CORP
发明人： KISHINO TETSUYA
IPC分类号： H03H9/145 , H03H9/02 , H03H9/64
CPC分类号： H03H9/64 , H03H9/02685 , H03H9/02866 , H03H9/14582 , H03H9/6483
摘要： Provided are an acoustic wave element, a filter element and a communication device with which it is possible to improve the characteristics of a communication band. An acoustic wave element of the present invention includes a piezoelectric substrate 2, an excitation electrode 3 which is arranged on the piezoelectric substrate 2 and includes a plurality of electrode fingers 32, and two reflectors 4 arranged on the piezoelectric substrate 2, each of which includes a plurality of reflection electrode fingers 42, which sandwich the excitation electrode 3 therebetween in the propagation direction of an acoustic wave. The excitation electrode 3 includes a main region in the center vicinity 3a of the line of the plurality of electrode fingers 32 in which the intervals between the centers of the plurality of electrode fingers 32 are uniformly a first interval. In the reflector 4, at least one of the reflection electrode fingers 42 shifts to the excitation electrode 3 side relative to virtual electrode finger positions which are repeatedly set at the first intervals from the electrode fingers 32 in the main region.

2. 发明公开

EP1983647A3 SURFACE ACOUSTIC WAVE DEVICE AND DUPLEXER 有权转让
标题翻译：表面声波装置和双工器
公开(公告)号：EP1983647A3
公开(公告)日：2012-11-28
申请号：EP08103546.1
申请日：2008-04-15
申请人： Taiyo Yuden Co., Ltd.
发明人： TAJIMA, Motoyuki , NISHIZAWA, Toshio , IKATA, Osamu
IPC分类号： H03H9/02
CPC分类号： H03H9/02559 , H03H9/02574 , H03H9/02866 , H03H9/6483
摘要： A surface acoustic wave device includes a supporting substrate (10), a LiTaO3 piezoelectric substrate (20) joined on the supporting substrate, which has a normal line direction on a main surface thereof in a direction rotated 43° to 53° from a Y axis to a Z axis direction about an X axis, and an electrode pattern formed on the piezoelectric substrate.

3. 发明公开

EP1675261A1 Surface acoustic wave device and method of manufacturing a surface acoustic wave device 有权
标题翻译： SAW Bauelement und Herstellungsmethodefürein SAW Bauelement
公开(公告)号：EP1675261A1
公开(公告)日：2006-06-28
申请号：EP05027864.7
申请日：2005-12-20
申请人： SEIKO EPSON CORPORATION
发明人： Furuhata, Makoto, c/o Seiko Epson Corporation , Sato, Hisakatsu, c/o Seiko Epson Corporation
IPC分类号： H03H9/02
CPC分类号： H03H3/08 , H03H9/02866 , H03H9/02976
摘要： A surface acoustic wave device including at least an IC region and a surface acoustic wave element region in a semiconductor substrate (30) and formed as a single chip, including, in the IC region, a semiconductor element layer (40) having a semiconductor element (31) and an element insulating film (33) formed to cover the semiconductor element (31) and extending to the surface acoustic wave element region, a wiring layer (41) formed by stacking, on the semiconductor element layer (40), wiring for establishing connection with the semiconductor element and a wiring insulating film (36) extending to the surface acoustic wave element region and for insulating the wiring, and a piezoelectric thin film (38) formed above the wiring insulating film, and in the surface acoustic wave element region, a surface acoustic wave element (24) formed on the piezoelectric thin film and equipped with an IDT electrode (22) provided with a plurality of electrode fingers (21), and at least one layer of layer thickness adjusting films (32,35) having linear shapes and arranged in parallel to and with the same pitch (P) as the electrode fingers (21) of the IDT electrode (22), and formed above one of the semiconductor substrate (30), the element insulating film (33), and the wiring insulating film (36), and below an area in which the surface acoustic wave element is formed.
摘要翻译：一种在半导体衬底（30）中至少包括IC区域和表面声波元件区域的表面声波装置，其形成为在IC区域中具有半导体元件层（40）的单芯片，（31）和形成为覆盖半导体元件（31）并延伸到声表面波元件区域的元件绝缘膜（33），在半导体元件层（40）上堆叠形成的布线层（41）用于与半导体元件建立连接以及延伸到表面声波元件区域并用于绝缘布线的布线绝缘膜（36），以及形成在布线绝缘膜上方的压电薄膜（38），以及在表面声波元件区域，形成在压电薄膜上并配备有设置有多个电极指（21）的IDT电极（22）的表面声波元件（24），以及至少一层层具有直线形状并且与IDT电极（22）的电极指（21）平行并与其相同的间距（P）布置的厚度调节膜（32,35），并且形成在半导体衬底（30）之上），元件绝缘膜（33）和布线绝缘膜（36），并且在形成表面声波元件的区域的下方。

4. 发明公开

EP1672789A1 Method of manufacturing surface acoustic wave device and surface acoustic wave device 审中-公开
标题翻译： Herstellungsmethodefürein SAW Bauelement und SAW Bauelement
公开(公告)号：EP1672789A1
公开(公告)日：2006-06-21
申请号：EP05027768.0
申请日：2005-12-19
申请人： SEIKO EPSON CORPORATION
发明人： Yajima, Aritsugu Seiko Epson Corporation , Sato, Hisakatsu Seiko Epson Corporation , Kojima, Takashi Seiko Epson Corporation
IPC分类号： H03H9/02
CPC分类号： H03H9/02976 , H03H3/08 , H03H9/02866 , Y10T29/42
摘要： A method of manufacturing a surface acoustic wave device formed in one chip and including over a semiconductor substrate (30) at least an IC region and a surface acoustic wave element region that are horizontally disposed, the method including: forming in the IC region over the semiconductor substrate a semiconductor element layer (45) that includes a semiconductor element (31) and an insulation layer (33) covering the semiconductor element and being deposited also in the surface acoustic wave element region; forming over the semiconductor element layer a wire layer (46) that includes a plurality of wires coupled to the semiconductor element and a wire insulating film (37) deposited over the plurality of wires to provide insulation among the wires, the wire insulating film (37) being deposited also over the insulation layer (33) in the surface acoustic wave element region; forming an interlayer insulating film (38) having a flattened surface on the wire insulating film (37) in the IC region and the surface acoustic wave element region; forming a piezoelectric thin film (39) on the interlayer insulating film (38); and forming a surface acoustic wave element (40) on the piezoelectric thin film (39) in the surface acoustic wave element region.
摘要翻译：一种制造表面声波装置的方法，所述声表面波装置形成在一个芯片中，并且至少包括水平设置的IC区域和表面声波元件区域的半导体衬底（30）上，所述方法包括：半导体衬底，包括半导体元件（31）的半导体元件层（45）和覆盖半导体元件并且还沉积在表面声波元件区域中的绝缘层（33）; 在所述半导体元件层上形成包括耦合到所述半导体元件的多个导线的线层（46）和沉积在所述多根导线上以在所述导线之间提供绝缘的线绝缘膜（37），所述线绝缘膜（37 ）沉积在表面声波元件区域中的绝缘层（33）上; 在所述IC区域中的所述导线绝缘膜（37）上形成具有平坦表面的层间绝缘膜（38）和所述表面声波元件区域; 在所述层间绝缘膜（38）上形成压电薄膜（39）; 以及在表面声波元件区域中的压电薄膜（39）上形成表面声波元件（40）。

5. 发明授权

EP1337039B1 Surface acoustic wave device and communications apparatus 有权
标题翻译：表面波装置和通信装置
公开(公告)号：EP1337039B1
公开(公告)日：2004-10-20
申请号：EP03290355.1
申请日：2003-02-14
申请人： Murata Manufacturing Co., Ltd.
发明人： Takamine, Yuichi Murata Manufacturing Co, Ltd. , Sawada, Yoichi Murata Manufacturing Co, Ltd.
IPC分类号： H03H9/145 , H03H9/02
CPC分类号： H03H9/008 , H03H9/0038 , H03H9/0042 , H03H9/0061 , H03H9/0071 , H03H9/0085 , H03H9/02866 , H03H9/14582 , H03H9/14588 , H03H9/14591 , H03H9/6436 , H03H9/6469

6. 发明公开

EP0057598A2 Acoustic surface wave device 失效
标题翻译：一种表面声波装置。
公开(公告)号：EP0057598A2
公开(公告)日：1982-08-11
申请号：EP82300487.4
申请日：1982-01-29
申请人： FUJITSU LIMITED
发明人： Kawaura, Kuninori , Yamada, Sumio , Wakatsuki, Noboru , Ono, Masaaki , Tanji, Shigeo , Fujiwara, Yoshiro , Yanagisawa, Masanobu
IPC分类号： H03H9/64 , H03H9/02 , H03H9/25
CPC分类号： H03H9/02842 , H03H9/02866
摘要： An acoustic surface wave device comprises a piezoelectric substrate (1), an input transducer (2), an output transducer (3) and acoustical absorbent layer patterns (5, 6) for absorbing undesired acoustic surface waves and bulk waves (S 4 , S 5 ). Each of the acoustical absorbent layer patterns (5, 6) has zigzag-shaped or triangular shaped edges, i.e., a recess portion (R 1 , R 3 ) and a protruding portion (R 2 , R 4 ). The recess portion has a further recess portion (R 1 ', R 3 ') which is formed obliquely with respect to the propagation path of acoustic surface waves.

7. 发明公开

EP0031685A3 Surface acoustic wave device 失效
标题翻译：表面声波设备
公开(公告)号：EP0031685A3
公开(公告)日：1981-10-07
申请号：EP80304604
申请日：1980-12-18
申请人： FUJITSU LIMITED
发明人： Iwamoto, Hisao , Wakatsuki, Noboru
IPC分类号： H03H09/145 , H03H09/64
CPC分类号： H03H9/02771 , H03H9/02842 , H03H9/02866 , H03H9/14547 , H03H9/14573
摘要： A surface acoustic wave device comprises a piezoelectric substrate, and an input transducer and an output transducer formed on the substrate. Dummy transducers are formed on the substrate and arranged to extend from the ends of the input and output transducers toward the ends of the substrate. The dummy transducers individually include electrodes spaced at the same pitch as the electrode pitch in the input and output transducers. Accordingly, there is no occurrence of reflections of the surface acoustic wave at the ends of the input and output transducers.

8. 发明授权

EP2736169B1 COMPOSITE SUBSTRATE, ELASTIC SURFACE WAVE DEVICE, AND METHOD FOR PRODUCING COMPOSITE SUBSTRATE 有权
标题翻译：复合基材，为了制造基片可弯曲声表面波器件和方法
公开(公告)号：EP2736169B1
公开(公告)日：2016-09-14
申请号：EP13821781.5
申请日：2013-07-12
申请人： NGK Insulators, Ltd.
发明人： HORI, Yuji , HATTORI, Ryosuke , TAI, Tomoyoshi
IPC分类号： H03H3/08 , H03H9/02 , H03H9/05 , H01L41/312
CPC分类号： H03H9/64 , C04B37/02 , H01L41/312 , H03H3/02 , H03H3/08 , H03H9/02574 , H03H9/02622 , H03H9/02866 , H03H9/0538 , H03H9/059 , H03H9/0595 , H03H9/145 , H03H9/25

9. 发明公开

EP2773040A1 SURFACE ACOUSTIC WAVE DEVICE 有权
标题翻译：表面声波触摸屏控制
公开(公告)号：EP2773040A1
公开(公告)日：2014-09-03
申请号：EP12844374.4
申请日：2012-10-22
申请人： Murata Manufacturing Co., Ltd.
发明人： KANDO, Hajime , OKADA, Keiji
IPC分类号： H03H9/25 , H01L41/09 , H01L41/18 , H03H9/145 , H03H9/64
CPC分类号： H03H9/64 , H03H9/0042 , H03H9/02535 , H03H9/02559 , H03H9/02574 , H03H9/02622 , H03H9/02834 , H03H9/02866 , H03H9/0585 , H03H9/14594 , H03H9/175 , H03H9/6433 , H03H9/6483 , H03H9/725
摘要： A surface acoustic wave device is provided which can adjust a band width without connecting an additional capacity, and which has a sufficiently small propagation loss. In a surface acoustic wave device (1), a plurality of surface acoustic wave elements (2 and 3) are made of piezoelectric bodies (4) having the same Cut-Angle. In the surface acoustic wave elements (2 and 3), a propagation azimuth (X1) of a surface acoustic wave in at least one surface acoustic wave element (2) is different from a propagation azimuth (X2) of a surface acoustic wave in at least another one surface acoustic wave element (3). In each of the surface acoustic wave elements (2 and 3), a confinement layer (12) for confining the surface acoustic wave inside the piezoelectric body (4) is disposed on the piezoelectric body (4) at the side opposite to the side where an electrode is formed.

10. 发明公开

EP1244212A3 Surface acoustic wave apparatus and communications unit 有权
标题翻译：一种声表面波装置和通信系统
公开(公告)号：EP1244212A3
公开(公告)日：2009-12-30
申请号：EP02290628.3
申请日：2002-03-12
申请人： MURATA MANUFACTURING CO., LTD.
发明人： Sawada, Yoichi c/o (A170) Intellectual Property D. , Takasaki, Hiroshi (A170) Intellectual Property D.
IPC分类号： H03H9/64 , H03H9/00 , H03H9/25 , H03H9/02
CPC分类号： H03H9/0071 , H03H9/0085 , H03H9/02866
摘要： In a surface acoustic wave (SAW) apparatus, a first SAW filter device (1) and a second SAW filter device (3) are disposed on a piezoelectric substrate (10) so that the propagation paths are overlapped. When the center-to-center distance between the first and second SAW filter devices (1, 3) are indicated by d 1 , and when the thickness of the piezoelectric substrate (10) is indicated by t, the first and second SAW filter devices (1, 3) and the piezoelectric substrate (10) are disposed so as to satisfy the condition d 1 ≤ 2.3 × t or d 1 ≥ 2.8 × t.

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