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1. 发明授权

EP2787637B1 COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：复合基板及其制造方法
公开(公告)号：EP2787637B1
公开(公告)日：2016-03-30
申请号：EP13840125.2
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： HORI, Yuji , TAI, Tomoyoshi , IWASAKI, Yasunori , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H01L41/02
CPC分类号： H01L41/0838 , H01L41/312 , H03H9/02574

2. 发明公开

EP2787638A1 COMPOSITE SUBSTRATE 有权
标题翻译：复合材料基材
公开(公告)号：EP2787638A1
公开(公告)日：2014-10-08
申请号：EP13840126.0
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： TAI, Tomoyoshi , IWASAKI, Yasunori , HORI, Yuji , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H03H9/25 , H03H9/145
CPC分类号： H01L41/0838 , H01L41/053 , H01L41/312 , H03H9/02574
摘要： A composite substrate according to the present invention includes a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer joining together the piezoelectric substrate and the support substrate. The amorphous layer contains 3 to 14 atomic percent of argon. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element (such as tantalum) of the piezoelectric substrate than the second and third layers. The third layer contains a larger amount of a constituent element (silicon) of the support substrate than the first and second layers. The second layer contains a larger amount of argon than the first and third layers.
摘要翻译：根据本发明的复合基板包括：作为单晶钽酸锂或铌酸锂基板的压电基板，作为单晶硅基板的支撑基板和将压电基板和支撑基板接合在一起的非晶层。无定形层含有3至14原子百分比的氩。非晶层从压电基板朝向复合基板依次包括第一层，第二层和第三层。第一层含有比第二层和第三层更大量的压电基片的组成元素（如钽）。与第一层和第二层相比，第三层含有更多的支撑基板的构成元素（硅）。第二层含有比第一层和第三层更大量的氩。

3. 发明授权

EP2787638B1 COMPOSITE SUBSTRATE 有权
标题翻译：复合基材
公开(公告)号：EP2787638B1
公开(公告)日：2016-03-30
申请号：EP13840126.0
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： TAI, Tomoyoshi , IWASAKI, Yasunori , HORI, Yuji , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H03H9/25 , H01L41/312
CPC分类号： H01L41/0838 , H01L41/053 , H01L41/312 , H03H9/02574

4. 发明公开

EP2787637A1 COMPOSITE SUBSTRATE AND MANUFACTURING M ETHOD THEREOF 有权
标题翻译： VERBUNDSUBSTRAT UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2787637A1
公开(公告)日：2014-10-08
申请号：EP13840125.2
申请日：2013-11-11
申请人： NGK Insulators, Ltd. , NGK Ceramic Device Co., Ltd.
发明人： HORI, Yuji , TAI, Tomoyoshi , IWASAKI, Yasunori , YAMADERA, Takahiro , HATTORI, Ryosuke , SUZUKI, Kengo
IPC分类号： H03H9/25 , H03H3/08
CPC分类号： H01L41/0838 , H01L41/312 , H03H9/02574
摘要： The present invention provides a composite substrate comprising a piezoelectric substrate that is a single-crystal lithium tantalate or lithium niobate substrate, a support substrate that is a single-crystal silicon substrate, and an amorphous layer containing argon and joining together the piezoelectric substrate and the support substrate. The amorphous layer includes, in order from the piezoelectric substrate toward the composite substrate, a first layer, a second layer, and a third layer. The first layer contains a larger amount of a constituent element of the piezoelectric substrate than the second and third layers, the third layer contains a larger amount of a constituent element of the support substrate than the first and second layers, and the second layer contains a larger amount of argon than the first and third layers.
摘要翻译：本发明提供一种复合基板，其包括作为单晶钽酸锂或铌酸锂基板的压电基板，作为单晶硅基板的支撑基板和含有氩的非晶层并将压电基板与支撑基板。从压电基板向复合基板依次包括第一层，第二层和第三层。第一层包含比第二层和第三层更大量的压电基板的构成元件，第三层包含比第一层和第二层更大量的支撑衬底的构成元件，并且第二层包含比第一和第三层更大量的氩。

5. 发明公开

EP2978009A1 HANDLE SUBSTRATE, COMPOSITE SUBSTRATE FOR SEMICONDUCTOR, AND SEMICONDUCTOR CIRCUIT SUBSTRATE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：操作基板，复合基板及其制造半导体及其电路基板和方法
公开(公告)号：EP2978009A1
公开(公告)日：2016-01-27
申请号：EP14873693.7
申请日：2014-12-16
申请人： NGK Insulators, Ltd.
发明人： MIYAZAWA, Sugio , IWASAKI, Yasunori , TAKAGAKI, Tatsuro , IDE, Akiyoshi , NAKANISHI, Hirokazu
IPC分类号： H01L21/02 , H01L27/12
CPC分类号： H01L21/76254 , C01F7/02 , C01P2006/60 , C04B35/10 , C04B35/115 , C04B35/64 , C04B37/001 , C04B2235/3206 , C04B2235/3225 , C04B2235/3244 , C04B2235/5409 , C04B2235/5445 , C04B2235/6025 , C04B2235/6562 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , C04B2235/786 , C04B2237/343 , C04B2237/70 , C04B2237/704 , H01L21/02002 , H01L21/6835 , H01L23/15 , H01L27/12 , H01L29/06 , H01L2221/68327 , H01L2221/68377 , H01L2221/68381
摘要： It is provided a handle substrate of a composite substrate for a semiconductor. The handle substrate is composed of a translucent polycrystalline alumina. A purity of alumina of the translucent polycrystalline alumina is 99.9% or higher, an average of a total forward light transmittance of the translucent polycrystalline alumina is 60% or higher in a wavelength range of 200 to 400 nm, and an average of a linear light transmittance of the translucent polycrystalline alumina is 15% or lower in a wavelength range of 200 to 400 nm.
摘要翻译：它被用于半导体提供一种复合衬底的把手的底物。手柄基板由透光性多晶氧化铝组成。半透明多晶氧化铝的氧化铝的纯度为99.9％或更高，平均透光性多晶氧化铝的总正向光透射率是在波长范围为200至400nm 60％或更高，并在平均的线性光半透明多晶氧化铝的透射率在波长范围为200至400nm 15％或更低。

6. 发明授权

EP3113586B1 INSULATING SUBSTRATE HAVING THROUGH-HOLES 有权
公开(公告)号：EP3113586B1
公开(公告)日：2018-11-28
申请号：EP15754711.8
申请日：2015-02-20
申请人： NGK Insulators, Ltd.
发明人： TAKAGAKI, Tatsuro , IWASAKI, Yasunori , MIYAZAWA, Sugio , IDE, Akiyoshi , NAKANISHI, Hirokazu
IPC分类号： H05K1/03 , C04B35/111 , H05K3/00
CPC分类号： H05K1/115 , C04B35/111 , C04B35/119 , C04B35/634 , C04B2235/3206 , C04B2235/3217 , C04B2235/3225 , C04B2235/3244 , C04B2235/3281 , C04B2235/3418 , C04B2235/6023 , C04B2235/606 , C04B2235/612 , C04B2235/6582 , C04B2235/662 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C04B2235/95 , H01B3/12 , H01B17/56 , H05K1/03 , H05K1/0306 , H05K3/00 , H05K3/0014 , H05K3/0029 , H05K2201/09009 , Y10T428/24273
摘要： It is provided an insulating substrate including through holes for conductors arranged in the insulating substrate. A thickness of the insulating substrate is 25 to 100 µ m, and a diameter of the through hole is 20 to 100 µ m. The insulating substrate includes a main body part and exposed regions exposed to the through holes and is composed an alumina sintered body. A relative density of the alumina sintered body is 99.5 percent or higher. The alumina sintered body has a purity of 99.9 percent or higher, and has an average grain size of 3 to 6 µ m in said main body part. Alumina grains are plate-shaped in the exposed region and the plate-shaped alumina grains have an average length of 8 to 25 µ m.

7. 发明授权

EP2736065B1 COMPOSITE WAFER AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：复合晶片及其制造方法
公开(公告)号：EP2736065B1
公开(公告)日：2017-09-06
申请号：EP13820306.2
申请日：2013-07-16
申请人： NGK Insulators, Ltd.
发明人： IWASAKI, Yasunori , IDE, Akiyoshi , HORI, Yuji , TAI, Tomoyoshi , MIYAZAWA, Sugio
IPC分类号： H01L21/02
CPC分类号： H01L29/06 , H01L21/02002 , H01L21/2007 , H01L21/762 , H01L21/76251

8. 发明授权

EP2953157B1 HANDLE SUBSTRATE AND COMPOSITE WAFER FOR SEMICONDUCTOR DEVICE 失效
标题翻译： GRIFFSUBSTRAT UND VERBUNDWAFERFÜREIN HALBLEITERBAUELEMENT
公开(公告)号：EP2953157B1
公开(公告)日：2017-04-05
申请号：EP14877410.2
申请日：2014-10-15
申请人： NGK Insulators, Ltd.
发明人： TAKAGAKI, Tatsuro , IWASAKI, Yasunori , MIYAZAWA, Sugio , IDE, Akiyoshi , NAKANISHI, Hirokazu
IPC分类号： H01L21/02 , C04B35/115 , C04B35/111 , H01L27/12
CPC分类号： H01L21/683 , C04B35/111 , C04B35/115 , C04B2235/3206 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/6023 , C04B2235/6025 , C04B2235/612 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , C04B2235/945 , C04B2235/963 , C30B29/06 , H01L21/02002 , H01L21/2007 , H01L27/12 , H01L29/16 , Y10T428/21 , Y10T428/219 , Y10T428/24777

9. 发明公开

EP2953157A1 HANDLE SUBSTRATE AND COMPOSITE WAFER FOR SEMICONDUCTOR DEVICE 失效
标题翻译：操纵衬底和复合晶片用于半导体元件
公开(公告)号：EP2953157A1
公开(公告)日：2015-12-09
申请号：EP14877410.2
申请日：2014-10-15
申请人： NGK Insulators, Ltd.
发明人： TAKAGAKI, Tatsuro , IWASAKI, Yasunori , MIYAZAWA, Sugio , IDE, Akiyoshi , NAKANISHI, Hirokazu
IPC分类号： H01L21/02 , C04B35/115
CPC分类号： H01L21/683 , C04B35/111 , C04B35/115 , C04B2235/3206 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/6023 , C04B2235/6025 , C04B2235/612 , C04B2235/6582 , C04B2235/661 , C04B2235/662 , C04B2235/945 , C04B2235/963 , C30B29/06 , H01L21/02002 , H01L21/2007 , H01L27/12 , H01L29/16 , Y10T428/21 , Y10T428/219 , Y10T428/24777
摘要： In a handle substrate for a composite wafer for a semiconductor, particles from the wafer with a notch formed therein are reduced. The handle substrate 1A or 1B for the composite wafer for the semiconductor is formed of a polycrystalline ceramic sintered body, and includes a notch 2A or 2B in its outer peripheral portion. The notch is formed with an as-sintered surface.

10. 发明公开

EP2736065A1 COMPOSITE WAFER AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：复合晶圆及其制造方法
公开(公告)号：EP2736065A1
公开(公告)日：2014-05-28
申请号：EP13820306.2
申请日：2013-07-16
申请人： NGK Insulators, Ltd.
发明人： IWASAKI, Yasunori , IDE, Akiyoshi , HORI, Yuji , TAI, Tomoyoshi , MIYAZAWA, Sugio
IPC分类号： H01L21/02
CPC分类号： H01L29/06 , H01L21/02002 , H01L21/2007 , H01L21/762 , H01L21/76251
摘要： A composite wafer 10 includes a supporting substrate 12 and a semiconductor substrate 14 which are bonded to each other by direct bonding. The supporting substrate 12 is a translucent alumina substrate with an alumina purity of 99% or more. The linear transmittance of the supporting substrate 12 at the visible light range is 40% or less. Furthermore, the total light transmittance from the front at a wavelength of 200 to 250 nm of the supporting substrate 12 is 60% or more. The average crystal grain size of the supporting substrate 12 is 10 to 35 µm. The semiconductor substrate 14 is a single crystal silicon substrate. Such a composite wafer 10 has insulation performance and thermal conduction comparable to those of a SOS wafer, can be manufactured at low cost, and can be easily made to have a large diameter.

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