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1. 发明公开

EP1901342A4 FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管
公开(公告)号：EP1901342A4
公开(公告)日：2009-07-22
申请号：EP06766608
申请日：2006-06-12
申请人： NEC CORP
发明人： MIYAMOTO HIRONOBU , ANDO YUJI , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , INOUE TAKASHI , OTA KAZUKI , WAKEJIMA AKIO , KASAHARA KENSUKE , MURASE YASUHIRO , MATSUNAGA KOHJI , YAMANOGUCHI KATSUMI , SHIMAWAKI HIDENORI
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： H01L29/404 , H01L29/7783 , H01L29/7787 , H01L29/802 , H01L29/812

2. 发明公开

EP1962338A4 FIELD EFFECT TRANSISTOR 审中-公开
标题翻译： FELDEFFEKTTRANSISTOR
公开(公告)号：EP1962338A4
公开(公告)日：2009-07-15
申请号：EP06834508
申请日：2006-12-12
申请人： NEC CORP
发明人： MATSUNAGA KOUJI , OTA KAZUKI , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , WAKEJIMA AKIO , ANDO YUJI , MIYAMOTO HIRONOBU , INOUE TAKASHI , MURASE YASUHIRO
IPC分类号： H01L21/338 , H01L21/335 , H01L29/06 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/66462
摘要： A semiconductor device (100) is provided with an undoped GaN electron transport layer (105); an AlGaN electron supply layer (106) arranged in contact with the undoped GaN electron transport layer (105); an undoped GaN layer (107) arranged on the AlGaN electron supply layer (106); a source electrode (101) and a drain electrode (103) arranged on the undoped GaN layer (107), being separated from one another; a recessed section (111), which is arranged in a region between the source electrode (101) and the drain electrode (103) and penetrating the undoped GaN layer (107); a gate electrode (102) which is embedded in the recessed section (111) and being brought into contact with the AlGaN electron supply layer (106) at the bottom plane; and a SiN film (108) arranged on the undoped GaN layer (107) in the region between the gate electrode (102) and the drain electrode (103).
摘要翻译：半导体器件（100）设置有未掺杂的GaN电子传输层（105）; 与未掺杂的GaN电子传输层（105）接触布置的AlGaN电子供应层（106）; 布置在所述AlGaN电子供给层（106）上的未掺杂的GaN层（107）; 布置在未掺杂的GaN层（107）上的源电极（101）和漏电极（103），彼此分离; 设置在所述源电极与所述漏电极之间的区域并贯穿所述未掺杂的GaN层的凹部; 嵌入凹部（111）内并在底面与AlGaN电子供给层（106）接触的栅电极（102）以及在栅电极（102）和漏电极（103）之间的区域中布置在未掺杂的GaN层（107）上的SiN膜（108）。

3. 发明公开

EP2003686A4 FIELD EFFECT TRANSISTOR 有权转让
标题翻译：场效应晶体管
公开(公告)号：EP2003686A4
公开(公告)日：2009-08-19
申请号：EP07736989
申请日：2007-03-29
申请人： NEC CORP
发明人： ANDO YUJI , MIYAMOTO HIRONOBU , NAKAYAMA TATSUO , OKAMOTO YASUHIRO , INOUE TAKASHI , MURASE YASUHIRO , OTA KAZUKI , WAKEJIMA AKIO , KURODA NAOTAKA
IPC分类号： H01L21/338 , H01L21/28 , H01L29/417 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003

4. 发明公开

EP1983563A4 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP1983563A4
公开(公告)日：2009-07-29
申请号：EP07706287
申请日：2007-01-29
申请人： NEC CORP
发明人： ANDO YUJI , MIYAMOTO HIRONOBU , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , INOUE TAKASHI
IPC分类号： H01L21/338 , H01L29/06 , H01L29/778 , H01L29/80 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/201

5. 发明公开

EP1901341A4 FIELD EFFECT TRANSISTOR 审中-公开
公开(公告)号：EP1901341A4
公开(公告)日：2009-07-15
申请号：EP06766607
申请日：2006-06-12
申请人： NEC CORP
发明人： MIYAMOTO HIRONOBU , ANDO YUJI , OKAMOTO YASUHIRO , NAKAYAMA TATSUO , INOUE TAKASHI , OTA KAZUKI , WAKEJIMA AKIO , KASAHARA KENSUKE , MURASE YASUHIRO , MATSUNAGA KOHJI , YAMANOGUCHI KATSUMI , SHIMAWAKI HIDENORI
IPC分类号： H01L21/338 , H01L29/06 , H01L29/40 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/802 , H01L29/812

6. 发明公开

EP1978550A4 FIELD EFFECT TRANSISTOR, AND MULTILAYERED EPITAXIAL FILM FOR USE IN PREPARATION OF FIELD EFFECT TRANSISTOR 审中-公开
标题翻译：场效应晶体管和多层外延用在场效应晶体管的制备
公开(公告)号：EP1978550A4
公开(公告)日：2009-07-22
申请号：EP06822252
申请日：2006-10-25
申请人： NEC CORP
发明人： INOUE TAKASHI , NAKAYAMA TATSUO , ANDO YUJI , MURASE YASUHIRO , OTA KAZUKI , MIYAMOTO HIRONOBU , YAMANOGUCHI KATSUMI , KURODA NAOTAKA , WAKEJIMA AKIO , OKAMOTO YASUHIRO
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： H01L29/7783 , H01L29/0607 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/42316 , H01L29/7787
摘要： In a group III nitride-type field effect transistor, the present invention reduces a leak current component by conduction of residual carriers in a buffer layer, and achieves improvement in a break-down voltage, and enhances a carrier confinement effect (carrier confinement) of a channel to improve pinch-off characteristics (to suppress a short channel effect). For example, when applying the present invention to a GaN-type field effect transistor, besides GaN of a channel layer, a composition-modulated (composition-gradient) AlGaN layer in which aluminum composition reduces toward a top gradually or stepwise is used as a buffer layer (hetero buffer). To gate length Lg of a FET to be prepared, a sum a of layer thicknesses of an electron supply layer and a channel layer is selected so as to fulfill Lg/a ‰¥ 5, and in such a case, the layer thickness of the channel layer is selected in a range of not exceeding 5 times (about 500 A) as long as a de Broglie wavelength of two-dimensional electron gas accumulated in the channel layer in room temperature.

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