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1. 发明公开

EP4411828A1 TRANSISTOR HEMT 审中-实审
公开(公告)号：EP4411828A1
公开(公告)日：2024-08-07
申请号：EP24155549.9
申请日：2024-02-02
申请人： STMicroelectronics International N.V.
发明人： CONSTANT, Aurore , IUCOLANO, Ferdinando , TRINGALI, Cristina , CASTAGNA, Maria Eloisa
IPC分类号： H01L29/778 , H01L21/337 , H01L29/10 , H01L29/40 , H01L21/223 , H01L29/20
CPC分类号： H01L29/7786 , H01L29/404 , H01L29/2003 , H01L29/1066 , H01L29/66462 , H01L21/2233
摘要： La présente description concerne un procédé de formation d'un transistor HEMT (41) comportant les étapes successives suivantes :
a) prévoir un empilement comportant une couche semiconductrice de canal (23), une couche semiconductrice barrière (13) sur et en contact avec la couche semiconductrice de canal (23) et une couche semiconductrice de grille (15) disposée sur et en contact avec la couche semiconductrice barrière (13), la couche semiconductrice de grille (15) comportant des éléments dopants de type P ; et
b) compenser le dopage de type P par des atomes d'oxygène, dans une partie supérieure (151) de la couche semiconductrice de grille (15), par un recuit sous oxygène, de manière à définir une jonction PN à l'interface entre la partie supérieure (151) et une partie centrale (153) de la couche semiconductrice de grille (15).

2. 发明公开

EP4411822A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING AN ELECTRICALLY INSULATING STRUCTURE IN A TRENCH 审中-公开
公开(公告)号：EP4411822A1
公开(公告)日：2024-08-07
申请号：EP23154769.6
申请日：2023-02-02
申请人： Infineon Technologies Austria AG
发明人： ALTSTÄTTER, Christof , NEUMANN, Ingmar , BLANK, Oliver , HOFER, Heimo
IPC分类号： H01L29/06 , H01L21/762 , H01L29/40 , H01L29/78
CPC分类号： H01L29/0649 , H01L29/7813 , H01L29/407 , H01L29/404 , H01L29/7811 , H01L21/76224
摘要： In an exemplary embodiment, a semiconductor device comprises a semiconductor substrate having a first major surface, a trench positioned in the semiconductor substrate and having a width, a base and a side wall extending from the base to the first major surface, a first electrically insulating layer that lines the base and side wall of the trench and an electrically insulating plug that is positioned in the trench and that extends across the entire width of the trench. The plug has a lower surface that forms an interface with the first electrically insulating layer and an upper surface. The upper surface of the plug is coplanar with the first major surface of the semiconductor substrate or positioned within the trench.

3. 发明公开

EP4394888A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：EP4394888A1
公开(公告)日：2024-07-03
申请号：EP22217353.6
申请日：2022-12-30
申请人： Hitachi Energy Ltd
发明人： BUITRAGO, Elizabeth , BOKSTEEN, Boni Kofi , DE-MICHIELIS, Luca
IPC分类号： H01L29/739 , H01L29/08 , H01L29/40 , H01L29/06
CPC分类号： H01L29/7397 , H01L29/0834 , H01L29/417 , H01L29/407 , H01L29/404 , H01L29/0619 , H01L29/0692 , H01L29/401
摘要： The semiconductor device (100) comprises a semiconductor body (10) with a top side (11) and a bottom side (19). A first main electrode (2) is arranged on the top side and a second main electrode (3) is arranged on the bottom side. The semiconductor device comprises a gate electrode (4) and at least two trenches, namely a first-type trench (51) and a second-type trench (52). The semiconductor body comprises a drift region (14) of a first conductivity type and at least three base regions (13a, 13b, 13c) each of a second conductivity type. The semiconductor body further comprises an injection region (12) of the first conductivity type. The first main electrode is in electrical contact with the injection region. The gate electrode extends into the first-type trench. The second-type trench is free of the gate electrode. An electrically conductive layer (8) is arranged on the top side above the third base region and is electrically connected to an electrode. The electrically conductive layer is located close to the third base region so that it capacitively couples thereto.

4. 发明公开

EP4379811A2 HIGH-ELECTRON-MOBILITY TRANSISTOR 审中-实审
公开(公告)号：EP4379811A2
公开(公告)日：2024-06-05
申请号：EP23199260.3
申请日：2023-09-25
申请人： GlobalFoundries U.S. Inc.
发明人： SHARMA, Santosh , KRISHNASAMY, Rajendran , KANTAROVSKY, Johnatan A.
IPC分类号： H01L29/778 , H01L21/337 , H01L29/06 , H01L29/40 , H01L29/10 , H01L29/20
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/1066 , H01L29/404 , H01L29/0657 , H01L29/66462
摘要： Semiconductor structures and, more particularly, a high-electron-mobility transistor and methods of manufacture thereof are disclosed. The structure includes: a gate structure (18, 22, 28); and a channel region (14, 16) under the gate structure, the channel region having a first portion including a first thickness and a second portion having a second thickness greater than the first thickness, the second portion being positioned remotely from the gate structure.

5. 发明授权

EP2779248B1 Apparatus related to termination regions of a semiconductor device 有权
公开(公告)号：EP2779248B1
公开(公告)日：2024-06-05
申请号：EP14000929.1
申请日：2014-03-13
IPC分类号： H01L29/40 , H01L29/78 , H01L29/739
CPC分类号： H01L29/42364 , H01L29/7811 , H01L29/404 , H01L29/407 , H01L29/0638 , H01L29/0649 , H01L29/4238 , H01L29/7813 , H01L29/41

6. 发明授权

EP2613356B1 IE type trench gate IGBT 有权转让
公开(公告)号：EP2613356B1
公开(公告)日：2018-07-04
申请号：EP13150257.7
申请日：2013-01-04
申请人： Renesas Electronics Corporation
发明人： Matsuura, Hitoshi
IPC分类号： H01L29/739 , H01L29/40
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/0696 , H01L29/0804 , H01L29/0821 , H01L29/0865 , H01L29/0882 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/41708 , H01L29/4236 , H01L29/66348 , H01L29/7395 , H01L2924/0002 , H01L2924/00
摘要： In a method of further enhancing the performance of a narrow active cell IE type trench gate IGBT having the width of active cells narrower than that of inactive cells, it is effective to shrink the cells so that the IE effects are enhanced. However, when the cells are shrunk simply, the switching speed is reduced due to increased gate capacitance. A cell formation area (10) of the IE type trench gate IGBT is basically composed of first linear unit cell areas (40f) having linear active cell areas (40a), second linear unit cell areas (40s) having linear hole collector areas (40c) and linear inactive cell areas (40i) disposed therebetween.

7. 发明公开

EP2779247A3 High electron mobility semiconductor device and manufacturing method therefor 有权
标题翻译：高电子迁移率半导体器件及其制造方法
公开(公告)号：EP2779247A3
公开(公告)日：2017-11-22
申请号：EP14159886.2
申请日：2014-03-14
申请人： Semiconductor Components Industries, LLC
发明人： Padmanabhan, Balaji , Venkatraman, Prasad , Parsey, Jr, John , Salih, Ali
IPC分类号： H01L29/778 , H01L21/338 , H01L29/40 , H01L29/04 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/20 , H01L29/872 , H01L29/205
CPC分类号： H01L29/7783 , H01L21/845 , H01L27/0688 , H01L27/0886 , H01L27/1211 , H01L29/045 , H01L29/0615 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/4175 , H01L29/41791 , H01L29/42316 , H01L29/4236 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66795 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/7789 , H01L29/785 , H01L29/872
摘要： In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure (27), source electrodes (36) and drain electrodes (37) are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers (38) are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.
摘要翻译：在一个实施例中，III族氮化物材料被用于形成半导体器件。在III族氮化物材料中形成鳍片结构，并且与鳍片结构间隔开地形成栅极结构（27），源极电极（36）和漏极电极（37）。鳍片结构提供了极性和半极性2DEG区域。在一个实施例中，栅极结构被配置为控制极性2DEG区域中的电流流动。屏蔽导体层（38）包括在栅极结构上方并且与半导体器件的漏极区域间隔开。

8. 发明授权

EP2927961B1 SEMICONDUCTOR DEVICE 有权转让
公开(公告)号：EP2927961B1
公开(公告)日：2017-10-18
申请号：EP13858222.6
申请日：2013-11-21
申请人： Fuji Electric Co., Ltd.
发明人： AGATA, Yasunori , SHIIGI, Takashi , CAO, Dawei
IPC分类号： H01L29/41 , H01L29/06
CPC分类号： H01L29/0619 , H01L29/404 , H01L29/408 , H01L29/4941 , H01L29/7395 , H01L29/7811 , H01L29/861

9. 发明公开

EP3158587A1 EXTENDED-DRAIN STRUCTURES FOR HIGH VOLTAGE FIELD EFFECT TRANSISTORS 有权
标题翻译：高压场效应晶体管的扩展漏极结构
公开(公告)号：EP3158587A1
公开(公告)日：2017-04-26
申请号：EP14895454.8
申请日：2014-06-18
申请人： Intel Corporation
发明人： NIDHI, Nidhi , JAN, Chia-Hong , HAFEZ, Walid
IPC分类号： H01L29/78 , H01L21/335
CPC分类号： H01L29/402 , H01L21/26513 , H01L23/66 , H01L29/1083 , H01L29/401 , H01L29/404 , H01L29/408 , H01L29/42368 , H01L29/42376 , H01L29/4983 , H01L29/66545 , H01L29/66659 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： Planar and non-planar field effect transistors with extended-drain structures, and techniques to fabricate such structures. In an embodiment, a field plate electrode is disposed over an extended-drain, with a field plate dielectric there between. The field plate is disposed farther from the transistor drain than the transistor gate. In a further embodiment, an extended-drain transistor has source and drain contact metal at approximately twice a pitch, of the field plate and the source and/or drain contact metal. In a further embodiment, an isolation dielectric distinct from the gate dielectric is disposed between the extended-drain and the field plate. In a further embodiment, the field plate may be directly coupled to one or more of the transistor gate electrode or a dummy gate electrode without requiring upper level interconnection. In an embodiment, a deep well implant may be disposed between a lightly-doped extended-drain and a substrate to reduce drain-body junction capacitance and improve transistor performance.
摘要翻译：具有扩展漏极结构的平面和非平面场效应晶体管以及制造这种结构的技术。在一个实施例中，场板电极设置在延伸漏极之上，其间具有场板电介质。场板设置得比晶体管栅极更远离晶体管的漏极。在进一步的实施例中，延伸漏极晶体管具有场板和源极和/或漏极接触金属的大约两倍节距的源极和漏极接触金属。在另一个实施例中，在延伸漏极和场板之间设置与栅极电介质不同的隔离电介质。在另一实施例中，场板可以直接耦合到晶体管栅极电极或伪栅极电极中的一个或多个，而不需要上层互连。在一个实施例中，深阱注入可以设置在轻掺杂的延伸漏极和衬底之间以减小漏极 - 本体结电容并改善晶体管性能。

10. 发明公开

EP2992560A4 DUAL RESURF TRENCH FIELD PLATE IN VERTICAL MOSFET 审中-公开
标题翻译： DUAL-RESURF-GRABENFELDPLATTE BEI EINEM VERTIKALEN MOSFET
公开(公告)号：EP2992560A4
公开(公告)日：2017-02-15
申请号：EP14760657
申请日：2014-03-06
申请人： TEXAS INSTRUMENTS INC
发明人： KOCON CHRISTOPHER B , NEILSON JOHN MANNING SAVIDGE , MOLLOY SIMON J , KAWAHARA HIDEAKI , YANG HONG , SRIDHAR SEETHARAMAN , WU HAO , WEN BOLING
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/0649 , H01L29/404 , H01L29/407 , H01L29/41766 , H01L29/66727 , H01L29/66734 , H01L29/7802

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