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    • 9. 发明公开
    • EXTENDED-DRAIN STRUCTURES FOR HIGH VOLTAGE FIELD EFFECT TRANSISTORS
    • 高压场效应晶体管的扩展漏极结构
    • EP3158587A1
    • 2017-04-26
    • EP14895454.8
    • 2014-06-18
    • Intel Corporation
    • NIDHI, NidhiJAN, Chia-HongHAFEZ, Walid
    • H01L29/78H01L21/335
    • H01L29/402H01L21/26513H01L23/66H01L29/1083H01L29/401H01L29/404H01L29/408H01L29/42368H01L29/42376H01L29/4983H01L29/66545H01L29/66659H01L29/66681H01L29/7816H01L29/7835
    • Planar and non-planar field effect transistors with extended-drain structures, and techniques to fabricate such structures. In an embodiment, a field plate electrode is disposed over an extended-drain, with a field plate dielectric there between. The field plate is disposed farther from the transistor drain than the transistor gate. In a further embodiment, an extended-drain transistor has source and drain contact metal at approximately twice a pitch, of the field plate and the source and/or drain contact metal. In a further embodiment, an isolation dielectric distinct from the gate dielectric is disposed between the extended-drain and the field plate. In a further embodiment, the field plate may be directly coupled to one or more of the transistor gate electrode or a dummy gate electrode without requiring upper level interconnection. In an embodiment, a deep well implant may be disposed between a lightly-doped extended-drain and a substrate to reduce drain-body junction capacitance and improve transistor performance.
    • 具有扩展漏极结构的平面和非平面场效应晶体管以及制造这种结构的技术。 在一个实施例中,场板电极设置在延伸漏极之上,其间具有场板电介质。 场板设置得比晶体管栅极更远离晶体管的漏极。 在进一步的实施例中,延伸漏极晶体管具有场板和源极和/或漏极接触金属的大约两倍节距的源极和漏极接触金属。 在另一个实施例中,在延伸漏极和场板之间设置与栅极电介质不同的隔离电介质。 在另一实施例中,场板可以直接耦合到晶体管栅极电极或伪栅极电极中的一个或多个,而不需要上层互连。 在一个实施例中,深阱注入可以设置在轻掺杂的延伸漏极和衬底之间以减小漏极 - 本体结电容并改善晶体管性能。