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1. 发明公开

EP2141764A1 DIRECTIONAL COUPLER 审中-公开
标题翻译：定向耦合器
公开(公告)号：EP2141764A1
公开(公告)日：2010-01-06
申请号：EP08740261.6
申请日：2008-04-11
申请人： Mitsubishi Electric Corporation
发明人： YAMAUCHI, Kazuhisa , NAKAYAMA, Masatoshi , ONAKA, Yasuhiro , HAMADA, Tomokazu , ISHIZAKA, Satoru
IPC分类号： H01P5/18 , H01P5/16
CPC分类号： H01P5/16 , H01P5/185
摘要： Provided is a directional coupler that is capable of improving a directionality of a directional coupler body including four terminals. The directional coupler comprises: the directional coupler body (10) including the four terminals of an input port (11), an output port (12), a coupling port (13), and an isolation port (14); and a combiner (30) for combining powers of an output signal of the coupling port (13) and an output signal of the isolation port (14) of the directional coupler body (10), the directional coupler further comprises a directionality improving circuit (20a) for amplifying or attenuating at least one of the output signal of the coupling port (13) and the output signal of the isolation port (14) before outputting the same, and the combiner (30) combines powers of the output signals amplified or attenuated by the directionality improving circuit (20a).

2. 发明公开

EP3276832A1 SYNTHESIZER 有权
标题翻译：合成器
公开(公告)号：EP3276832A1
公开(公告)日：2018-01-31
申请号：EP16780074.7
申请日：2016-04-13
申请人： Mitsubishi Electric Corporation
发明人： YAMAUCHI, Kazuhisa , TOKUMORI, Nobuhiro , MIYASAKA, Kenji , FUJIWARA, Takashi , KAWAMURA, Masaki
IPC分类号： H03L7/23 , H03L7/185 , H03L7/197
CPC分类号： H03L7/23 , H03L7/185 , H03L7/1974
摘要： A fine-adjustment synthesizer (1) includes a fractional phase-locked loop having a reference integer frequency divider (6), a phase comparator (7), a loop filter (8), a frequency variable oscillator (9), a mixer (4), a band-pass filter (13), and a feedback path programmable fractional frequency divider (12). A coarse-adjustment synthesizer (2) includes an integer-type phase-locked loop having a reference integer frequency divider (14), a phase comparator (15), a loop filter (16), a frequency variable oscillator (17), a band-pass filter (19), and a feedback path programmable integer frequency divider (18). An output of a reference signal source (3) is input in parallel to both the fine-adjustment synthesizer (1) and the coarse-adjustment synthesizer (2). An output of the frequency variable oscillator (9) in the fine-adjustment synthesizer (1) and an output of the frequency variable oscillator (17) in the coarse-adjustment synthesizer (2) are guided to the mixer (4) and an output signal of the fine-adjustment synthesizer (1) is guided to an output end (11).
摘要翻译：微调合成器（1）包括具有参考整数分频器（6），相位比较器（7），环路滤波器（8），频率可变振荡器（9），混频器 4），带通滤波器（13）和反馈路径可编程分数分频器（12）。粗调合成器（2）包括整数型锁相环，其具有参考整数分频器（14），相位比较器（15），环路滤波器（16），频率可变振荡器（17），带通滤波器（19）和反馈路径可编程整数分频器（18）。参考信号源（3）的输出与微调合成器（1）和粗调合成器（2）并行输入。微调合成器（1）中的频率可变振荡器（9）的输出和粗调合成器（2）中的频率可变振荡器（17）的输出被引导至混频器（4），并且输出微调合成器（1）的信号被引导到输出端（11）。

3. 发明公开

EP2639820A1 SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译： HERBLEITERBAUEMENT UND HERSTELLUNGSVERFAHRENFÜRDAS HALBLEITERBAUELEMENT
公开(公告)号：EP2639820A1
公开(公告)日：2013-09-18
申请号：EP10859611.5
申请日：2010-11-10
申请人： Mitsubishi Electric Corporation
发明人： OISHI, Toshiyuki , OTSUKA, Hiroshi , YAMANAKA, Koji , YAMAUCHI, Kazuhisa , HANGAI, Masatake , NAKAYAMA, Masatoshi
IPC分类号： H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： H01L29/2003 , H01L21/0254 , H01L29/0607 , H01L29/0657 , H01L29/205 , H01L29/7786
摘要： It is an object to attain both high gain and a broad band (that is, to attain both reduction in a gate-drain capacitance and reduction in a source-drain capacitance). Provided is a semiconductor device, including: a GaN channel layer (3) through which electrons travel; a barrier layer (4) which is provided on the GaN channel layer in order to form two-dimensional electron gas in the GaN channel layer and which contains at least any one of In, Al, and Ga and contains N; a gate electrode (8), a source electrode (6), and a drain electrode (7); and a plate (20) formed of a material having polarization, which is provided between the gate electrode (8) and the drain electrode (7), the plate being held in contact with a part of the barrier layer (4).
摘要翻译：其目的在于获得高增益和宽带（即，获得栅极 - 漏极电容的减小和源极 - 漏极电容的降低）。提供一种半导体器件，包括：电子行进的GaN沟道层（3）; 阻挡层（4），其设置在所述GaN沟道层上，以在所述GaN沟道层中形成二维电子气，并且其包含In，Al和Ga中的至少任一个并且包含N; 栅电极（8），源电极（6）和漏电极（7）; 以及设置在所述栅极（8）和所述漏电极（7）之间的具有偏振材料的板（20），所述板与所述阻挡层（4）的一部分保持接触。

4. 发明授权

EP3276832B1 SYNTHESIZER 有权
公开(公告)号：EP3276832B1
公开(公告)日：2019-03-13
申请号：EP16780074.7
申请日：2016-04-13
申请人： Mitsubishi Electric Corporation
发明人： YAMAUCHI, Kazuhisa , TOKUMORI, Nobuhiro , MIYASAKA, Kenji , FUJIWARA, Takashi , KAWAMURA, Masaki
IPC分类号： H03L7/23 , H03L7/185 , H03L7/197

5. 发明公开

EP2273672A1 LOW DISTORTION AMPLIFIER AND DOHERTY AMPLIFIER USING LOW DISTORTION AMPLIFIER 审中-公开
标题翻译： VERZERRUNGSARMERVERSTÄRKERUND DOHERTY-VERSTÄRKERMIT VERZERRUNGSARMEMVERSTÄRKER
公开(公告)号：EP2273672A1
公开(公告)日：2011-01-12
申请号：EP08738821.1
申请日：2008-03-25
申请人： Mitsubishi Electric Corporation
发明人： YAMAUCHI, Kazuhisa , NOTO, Hifumi , INOUE, Akira , HAMADA, Tomokazu , NAKAYAMA, Masatoshi , HORIGUCHI, Kenichi
IPC分类号： H03F1/32 , H03F1/07 , H03F3/21 , H03F3/60
CPC分类号： H03F3/195 , H03F1/0288 , H03F1/3205 , H03F1/565 , H03F3/601 , H03F2200/387 , H03F2200/451
摘要： Provided is a low distortion amplifier which can satisfy both securement of a setting space in a vicinity of a transistor and low impedance. The low distortion amplifier includes a short stub having a leading end thereof short-circuited with a high-frequency short-circuit element and a low-frequency short-circuit element, in which the short stub is connected to a vicinity of at least one of a gate terminal and a drain terminal of the transistor, and includes a plurality of branched lines, the plurality of branched lines each having a leading end thereof short-circuited with the high-frequency short-circuit element and the low-frequency short-circuit element.
摘要翻译：提供了一种能够满足晶体管附近的设定空间的固定和低阻抗的低失真放大器。低失真放大器包括其短端与高频短路元件和低频短路元件短路的短路短路短路短路元件，短路短路元件与短路短路元件的至少一个晶体管的栅极端子和漏极端子，并且包括多条分支线路，所述多条分支线路的前端与高频短路元件和低频短路元件短路元件。

6. 发明公开

EP2101409A1 POWER AMPLIFICATION DEVICE 有权转让
标题翻译：性能增益设置
公开(公告)号：EP2101409A1
公开(公告)日：2009-09-16
申请号：EP07850128.5
申请日：2007-12-05
申请人： Mitsubishi Electric Corporation
发明人： YAMAUCHI, Kazuhisa , SAKAI, Yuji , FUJISAKI, Koichi , INOUE, Akira
IPC分类号： H03F1/07 , H03F3/24
CPC分类号： H03F1/0238 , H03F1/0244 , H03F1/0288
摘要： Provided is a power amplification device including: a DC power supply that outputs a drain voltage; a Doherty amplifier including a carrier amplifier and a peak amplifier, which are connected in parallel, and amplifies an RF signal; a voltage control circuit that outputs a first instruction to output a low voltage when an output power is equal to or lower than a given value, and outputs a second instruction to output a high voltage when the output power is larger than the given value; and a voltage converter circuit that converts the drain voltage to a voltage lower than the drain voltage and applies the converted voltage to drain terminals of the carrier amplifier and the peak amplifier according to the first instruction, and applies the drain voltage directly to the drain terminals of the carrier amplifier and the peak amplifier according to the second instruction.

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