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1. 发明公开

EP0632485A2 Method of fabricating semicondutor thin film and method of fabricating hall-effect device 失效
标题翻译：一种用于制造半导体薄膜及其制造方法的霍尔效应器件的方法。
公开(公告)号：EP0632485A2
公开(公告)日：1995-01-04
申请号：EP94108235.6
申请日：1994-05-27
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Kawasaki, Tetuo , Koretika, Tetuhiro , Kitabatake, Makoto , Hirao, Takashi
IPC分类号： H01L21/20 , H01L43/14
CPC分类号： H01L43/08 , H01L21/02381 , H01L21/02466 , H01L21/02502 , H01L21/02549 , H01L21/02631 , H01L43/065 , Y10S438/974
摘要： A method of fabricating a semiconductor thin film (4) is initiated with preparing a substrate (1) having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer (2) is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer (3) containing at least In and Sb is formed on the initial layer. A semiconductor thin film (4) containing at least In and Sb is formed on the buffer layer (3) at a temperature higher than the temperature at which the buffer layer (3) is started to be formed.
There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.
摘要翻译：一种制造半导体薄膜的方法与制备具有表面由Si的单晶的衬底开始。表面有氧化物的电影。然后，将氧化膜被除去。表面上硅原子的悬空键终止氢原子。初始层形成在Si的单晶中的至少一个与氢原子封端的，从所述组自由Al，Ga和In中选择的底物。包含缓冲层至少In与Sb的形成的初始层上。一种半导体薄膜至少包含In和Sb被形成在比缓冲层开始被形成的温度更高的温度下在缓冲层上。因此，存在游离缺失盘制造霍尔效应器件的方法。这个方法与通过使用上述制造方法形成的半导体薄膜发起。然后，将电极连接到薄膜。

2. 发明授权

EP0600303B1 Method for fabrication of dielectric thin film 失效
标题翻译：一种用于制造薄膜电方法
公开(公告)号：EP0600303B1
公开(公告)日：2002-02-06
申请号：EP93118535.9
申请日：1993-11-18
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Hayashi, Shigenori , Komaki, Kazuki , Kamada, Takeshi , Kitagawa, Masatoshi , Deguchi, Takashi , Takayama, Ryoichi , Hirao, Takashi
IPC分类号： H01L21/3205 , H01L21/82 , H01L21/316 , C23C14/34 , C23C14/08
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , G02F1/0027 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316

3. 发明公开

EP0667532A2 Thin film sensor element and method of manufacturing the same 失效
标题翻译： Dünnfilm-Sensorelement sowie Verfahren zu seiner Herstellung
公开(公告)号：EP0667532A2
公开(公告)日：1995-08-16
申请号：EP95100861.4
申请日：1995-01-23
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Torii, Hideo , Kamada, Takeshi , Hayashi, Shigenori , Takayama, Ryoichi , Hirao, Takashi , Hattori, Masumi
IPC分类号： G01P15/08 , H01L37/00
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element.
On the surface of a flat plate KBr substrate 1, a rock-salt crystal structure oxide of a conductive NiO 12 is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to (100) direction against the substrate surface. By means of a sputtering method, a PZT film 4 is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film 15 is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate 7 having an opening part with an adhesive 20. After a connection electrode 19 is connected, the whole structure is washed with water, thereby removing the KBr substrate 1.
摘要翻译：薄膜传感器元件包括：传感器保持基板，其具有至少由电极膜A，具有（100）面取向的电极膜B和存在于电极之间的压电介电氧化物膜组成的开口部分和多层膜; 膜A和电极膜B.结果，可以获得可用于加速度传感器元件和热电型红外线传感器元件的小，轻，高精度和便宜的薄膜传感器元件。在平板KBr衬底1的表面上，导电NiO 12的岩盐晶体结构氧化物通过等离子体MOCVD方法形成，其垂直方向是晶体取向为＆lt; Lang＆100＆Rang＆amp;反对衬底表面的方向。通过溅射法，在该表面上通过外延生长形成PZT膜4，在其上形成Ni-Cr电极膜15。接下来，将多层膜结构反转并粘附到具有开口部的粘合剂20的传感器基板7.连接电极19连接后，将整个结构用水洗涤，从而除去KBr基板1。

4. 发明公开

EP0301525A3 Superconductor structure 失效
标题翻译：超导体结构
公开(公告)号：EP0301525A3
公开(公告)日：1990-06-20
申请号：EP88112169.3
申请日：1988-07-27
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Setsune, Kentaro , Kamada, Takeshi , Adachi, Hideaki , Wasa, Kiyotaka , Hirao, Takashi , Higashino, Hidetaka , Yamazaki, Osamu
IPC分类号： H01L39/24 , H01L39/12 , C30B23/02 , C30B29/22
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704
摘要： A superconductive structure comprising a crystalline coating (12) applied to a substrate (11) and a crystalline superconducting film (13) epitaxially deposited on said crystalline coating (12). Especially CaF₂ crystals and ZrO₂ crystals with a CaF₂ crystal structure show good lattice matching with semiconductor substrate materials such as Si, GaAs, etc., as well as with superconducting materials comprising copper oxide. The crystalline coating (12) may be made of a material having a perovskite structure, such as BaTiO₃, when the superconducting coating (13) is made of a material having a perovskite structure.

5. 发明授权

EP0667532B1 Thin film sensor element and method of manufacturing the same 失效
标题翻译：薄膜传感元件和其制备方法
公开(公告)号：EP0667532B1
公开(公告)日：2003-11-26
申请号：EP95100861.4
申请日：1995-01-23
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Torii, Hideo , Kamada, Takeshi , Hayashi, Shigenori , Takayama, Ryoichi , Hirao, Takashi , Hattori, Masumi
IPC分类号： G01P15/08 , H01L37/00 , G01P15/09 , H01L41/22 , G01J5/34
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981

6. 发明授权

EP0301525B2 Superconductor structure 失效
标题翻译：超导结构
公开(公告)号：EP0301525B2
公开(公告)日：1998-08-19
申请号：EP88112169.3
申请日：1988-07-27
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Setsune, Kentaro , Kamada, Takeshi , Adachi, Hideaki , Wasa, Kiyotaka , Hirao, Takashi , Higashino, Hidetaka , Yamazaki, Osamu
IPC分类号： H01L39/24 , H01L39/12 , C30B23/02 , C30B29/22
CPC分类号： H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/703 , Y10S505/704

7. 发明公开

EP0600303A3 Method and apparatus for fabrication of dielectric thin film 失效
标题翻译：装置和用于制造薄膜电方法。
公开(公告)号：EP0600303A3
公开(公告)日：1995-08-02
申请号：EP93118535.9
申请日：1993-11-18
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Hayashi, Shigenori , Komaki, Kazuki , Kamada, Takeshi , Kitagawa, Masatoshi , Deguchi, Takashi , Takayama, Ryoichi , Hirao, Takashi
IPC分类号： H01L21/3205 , H01L21/82 , H01L21/316 , C23C14/34 , C23C14/08
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , G02F1/0027 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316
摘要： A method whereby perovskite type oxide dielectric thin films with ABO₃ structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, and, on top of that, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a non-deposition process, wherein no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmospher comprising at least ozone (O₃), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmos phere comprising at least reactive elements in said non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.

8. 发明公开

EP0657718A1 Capacitance sensor and method of manufacturing the same 失效
标题翻译： Kapazitiver传感器和Verfahren zur Herstellung。
公开(公告)号：EP0657718A1
公开(公告)日：1995-06-14
申请号：EP94119079.5
申请日：1994-12-02
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Hayashi, Shigenori , Kamada, Takeshi , Torii, Hideo , Hirao, Takashi
IPC分类号： G01D5/24 , G01L9/00 , G01P15/125
CPC分类号： G01L9/0072 , G01D5/2417 , G01P15/125 , Y10T29/43
摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material (2) such as KBr into a through-hole, forming a conductive thin film (4) on the surface, and dissolving and removing the alkali halide material (2).
An insulating plate (1) disposed with a through-hole in the thickness direction is filled with a molten alkali halide material (2) such as KBr. After forming a conductive thin film (4) on the surface of the alkali halide material (2) filled into the through-hole and the vicinity thereof, the alkali halide material (2) is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film (4). A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film (4) is detected as a capacitance change between the conductive thin film (4) and the electrode layer (6).
摘要翻译：通过将诸如KBr的碱金属卤化物材料（2）填充到通孔中，在表面上形成导电薄膜（4）并溶解和除去碱金属卤化物材料 2）。在厚度方向上设置有通孔的绝缘板（1）填充有诸如KBr的熔融卤化碱材料（2）。在填充到通孔及其附近的碱金属卤化物材料（2）的表面上形成导电薄膜（4）之后，碱金属卤化物材料（2）被水溶解并除去。以这种方式，隔膜由通孔和导电薄膜（4）制成。由导电薄膜（4）的两个面之间的压力差引起的隔膜的曲线被检测为导电薄膜（4）和电极层（6）之间的电容变化。

9. 发明公开

EP0403986A1 Method for manufacturing substrates for depositing diamond thin films 失效
标题翻译： Verfahren zum Herstellen von Substraten zum Beschichten mitdünnenDiamantschichten。
公开(公告)号：EP0403986A1
公开(公告)日：1990-12-27
申请号：EP90111379.5
申请日：1990-06-16
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Deguchi, Masahiro , Hirao, Takashi
IPC分类号： C30B25/18 , C30B25/02 , C23C14/48 , C30B29/04
CPC分类号： C30B25/18 , C23C14/48 , C23C16/0209 , C23C16/0272 , C30B25/02 , C30B29/04
摘要： A method for manufacturing substrates for depositing diamond thin films is disclosed.
In the method, a hydrogen carbide gas is discharge-decomposed, products generated by the discharge decomposition are accelerated to implant them in a surface layer of a substrate made of a material other than diamond and, thereby, the surface layer having bondings of carbon atoms and atoms compositing the substrate. Desirably, the substrate thus manufactured is subjected to a heat treatment at a temperature ranging from 800 to 1,200 °C.
摘要翻译：公开了一种用于制造用于沉积金刚石薄膜的衬底的方法。在该方法中，碳化氢气体被放电分解，由放电分解产生的产物被加速以将它们注入到由除金刚石以外的材料制成的衬底的表面层中，从而使具有碳原子键合的表面层和原子合成基底。理想地，将如此制造的基板在800-1200℃的温度下进行热处理。

10. 发明公开

EP0182371A3 Protection film structure for functional devices 失效
标题翻译：功能设备的保护膜结构
公开(公告)号：EP0182371A3
公开(公告)日：1987-12-09
申请号：EP85114742
申请日：1985-11-19
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Wasa, Kiyotaka , Hirao, Takashi , Nishikawa, Atsuo , Nishino, Seiji , Ohta, Takeo
IPC分类号： H01L23/28 , G11B07/24
CPC分类号： H01L23/3157 , G11B5/72 , G11B7/2403 , H01L23/291 , H01L2924/0002 , H01L2924/09701 , Y10T428/24942 , Y10T428/31576 , Y10T428/31601 , Y10T428/31605 , H01L2924/00
摘要： An inorganic protection film (12) such as of silicon nitride for protecting function devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as of polycarbonate with a soft buffer interface film (13) inbetween, and the buffer film releases stress due to difference of thermal expansion coefficients of the organic substrate and the protection film.

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