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1. 发明授权

EP1054459B1 Thin-film piezoelectric bimorph element, mechanical detector and inkjet head using the same, and methods of manufacturing the same 有权
标题翻译：薄层压电元件bilaminares，它们的这种机械用检测器和喷墨打印头及其制造方法
公开(公告)号：EP1054459B1
公开(公告)日：2002-12-11
申请号：EP00110740.8
申请日：2000-05-19
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Fujii, Satoru , Takayama, Ryoichi , Kanno, Isaku , Kamada, Takeshi
IPC分类号： H01L41/113 , H01L41/083 , H01L41/09 , B41J2/16 , B41J2/14
CPC分类号： G01P15/0802 , B41J2/14233 , B41J2002/14258 , G01P15/09 , H01L41/094 , H01L41/1132 , Y10T29/42 , Y10T29/49002 , Y10T29/49004 , Y10T29/49005 , Y10T29/49126 , Y10T29/49128 , Y10T29/49147

2. 发明授权

EP0600303B1 Method for fabrication of dielectric thin film 失效
标题翻译：一种用于制造薄膜电方法
公开(公告)号：EP0600303B1
公开(公告)日：2002-02-06
申请号：EP93118535.9
申请日：1993-11-18
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Hayashi, Shigenori , Komaki, Kazuki , Kamada, Takeshi , Kitagawa, Masatoshi , Deguchi, Takashi , Takayama, Ryoichi , Hirao, Takashi
IPC分类号： H01L21/3205 , H01L21/82 , H01L21/316 , C23C14/34 , C23C14/08
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , G02F1/0027 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316

3. 发明公开

EP1035648A3 A band switching filter using a surface acoustic wave resonator and an antenna duplexer using the same 审中-公开
标题翻译： Bereichsumschaltbares过滤与表面波和天线共用器具有这样的过滤器
公开(公告)号：EP1035648A3
公开(公告)日：2000-12-27
申请号：EP00104611.9
申请日：2000-03-03
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Sakuragawa, Toru , Sato, Yuki , Fujii. Katsuya , Murakami, Kozo , Takayama, Ryoichi
IPC分类号： H03H9/64 , H03H9/72
CPC分类号： H03H9/6483 , H03H9/725
摘要： The present invention relates to a band switching filter including a resonator circuit having a surface acoustic wave resonator, a switching element and an independance element and selectively passing or attenuating a signal through only one pass band of different two pass bands with a single filter and the resonant frequency of the resonator circuit can be shifted to any other frequency by switching a connection state of the surface acoustic wave resonator and the impedance element by open-or short-circuiting the switching element and results in the number of filter stages can be reduced and the band switching filter using the resonator and an antenna duplexer using the band switching filter can be miniaturized, the permanent magnet.
摘要翻译：本发明涉及于一频带切换滤波器，其包括具有表面声波谐振器，开关元件和独立性元件的并选择性地仅通过一个通带不同的两个匹配频带的具有单个滤波器和通过或衰减的信号的谐振器电路谐振器电路的谐振频率可以通过切换表面声波谐振器的连接状态，并通过打开或短路在滤波器级的数量的开关元件和结果能够降低阻抗元件被移动到任何其他的频率和利用在使用所述频带切换滤波器天线双工器的谐振器和永久磁铁频带切换滤波器可以小型化，则。

4. 发明公开

EP0733721A1 Process and apparatus for producing oxide films and chemical vapor deposition 失效
标题翻译：对于通过沉积从气相产生的氧化物层的方法和装置
公开(公告)号：EP0733721A1
公开(公告)日：1996-09-25
申请号：EP96104339.5
申请日：1996-03-19
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Fujii, Eiji , Tomozawa, Atsushi , Torii, Hideo , Takayama, Ryoichi
IPC分类号： C23C16/50 , C23C16/40 , C23C16/44
CPC分类号： C23C16/45561 , C23C16/406 , C23C16/455 , C23C16/5096
摘要： The present invention relates to a process for producing crystallographic oriented oxide thin films having an NaCl-type structure, a spinel structure or a Wurtzite structure used as a buffer layer to obtain a functional oxide thin film such as a superconductive oxide thin film and a ferroelectric thin film, and a chemical vapor deposition apparatus used therefor. A rotatable substrate holder (4) is provided in a reaction chamber (1). The substrate holder (4), which holds substrates (3) thereunder, includes a substrate heater (2). The substrate holder (4) is grounded to provide an electrode. Another electrode (5), which is connected to a high frequency power source (10), is located opposing the substrate holder (4) in the reaction chamber (1). At a side wall of the reaction chamber (1), an exhaust (6) is arranged. In a plasma electric discharge area (7) formed between the substrate holder (4) and the electrode (5), a material gas supplier (8) is located, having a predetermined tilt angle θ with respect to the substrate holder (4).
摘要翻译：本发明涉及一种方法，用于生产具有NaCl型结构，尖晶石结构或用作缓冲层，以获得功能性氧化物薄膜纤锌矿结构结晶取向氧化物薄膜：诸如超导氧化物薄膜和铁电薄膜，和化学气相沉积设备为此使用。可旋转的基座衬底支架（4）在反应室（1）提供。衬底保持器（4），其根据（3）有保持基板，包括：基板加热器（2）。基板保持器（4）被接地，以提供电极。另一个电极（5），其连接到一个高频电源（10）位于相对的基板保持器（4）在反应室（1）。在反应室的侧壁（1）排气（6）被布置。在基板保持器FORMED（4）和（8）电极（5）之间的等离子体放电区域（7），一原料气体供应商的位置，具有规定的倾斜角θ驱动＆; 相对于所述基板保持器（4）。

5. 发明公开

EP0667532A2 Thin film sensor element and method of manufacturing the same 失效
标题翻译： Dünnfilm-Sensorelement sowie Verfahren zu seiner Herstellung
公开(公告)号：EP0667532A2
公开(公告)日：1995-08-16
申请号：EP95100861.4
申请日：1995-01-23
申请人： Matsushita Electric Industrial Co., Ltd.
发明人： Torii, Hideo , Kamada, Takeshi , Hayashi, Shigenori , Takayama, Ryoichi , Hirao, Takashi , Hattori, Masumi
IPC分类号： G01P15/08 , H01L37/00
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element.
On the surface of a flat plate KBr substrate 1, a rock-salt crystal structure oxide of a conductive NiO 12 is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to (100) direction against the substrate surface. By means of a sputtering method, a PZT film 4 is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film 15 is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate 7 having an opening part with an adhesive 20. After a connection electrode 19 is connected, the whole structure is washed with water, thereby removing the KBr substrate 1.
摘要翻译：薄膜传感器元件包括：传感器保持基板，其具有至少由电极膜A，具有（100）面取向的电极膜B和存在于电极之间的压电介电氧化物膜组成的开口部分和多层膜; 膜A和电极膜B.结果，可以获得可用于加速度传感器元件和热电型红外线传感器元件的小，轻，高精度和便宜的薄膜传感器元件。在平板KBr衬底1的表面上，导电NiO 12的岩盐晶体结构氧化物通过等离子体MOCVD方法形成，其垂直方向是晶体取向为＆lt; Lang＆100＆Rang＆amp;反对衬底表面的方向。通过溅射法，在该表面上通过外延生长形成PZT膜4，在其上形成Ni-Cr电极膜15。接下来，将多层膜结构反转并粘附到具有开口部的粘合剂20的传感器基板7.连接电极19连接后，将整个结构用水洗涤，从而除去KBr基板1。

6. 发明公开

EP0441408A2 Ferroelectric film device and process for producing the same 失效
标题翻译：具有强电介质膜，和它们的制备方法的设备。
公开(公告)号：EP0441408A2
公开(公告)日：1991-08-14
申请号：EP91102700.1
申请日：1987-03-03
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Iijima, Kenji , Takayama, Ryoichi , Tomita, Yoshihiro , Ueda, Ichiro
IPC分类号： C23C14/08 , C23C14/34 , C30B23/02 , C30B29/32 , C04B35/49
CPC分类号： H01L37/025 , C23C14/08 , C23C14/088 , H01L41/1876 , H01L41/257 , H01L41/316
摘要： For applying ferroelectrics to electronic devices, the poling treatment of the ferroelectrics has been necessary in order to uniform directions of spontaneous polarizations, Ps, in each ferroelectric. This treatment brings about (1) low yields of the devices, (2) difficulties in the fabrication of array devices, and (3) difficulties in the formation of ferroelectric films on semiconductor devices.
Now it has been found that a self-polarized film in which spontaneous polarizations, Ps, are unidirectional can be formed by sputtering a ferroelectric materials containing lead under such conditions that the orientation of Ps will be controlled without poling treatment and a high-performance ferroelectric device can be obtained in a high yield by using this film, and thus a porcess for producing such devices has been found.
摘要翻译：用于施加铁电体的电子设备，铁电体的极化处理，从而有必要将自发极化，诗的均匀的方向，在每个铁电。这种处理带来了（1）的装置的低的产率，（2）在阵列器件的制造中的困难，并在半导体器件的铁电膜的形成（3）的困难。现在已经发现做了自我极化电影在哪个自发极化，PS，是单向的，可通过溅射包含调查的条件下，铅的铁电材料形成并Ps的方向将不极化处理和高性能的铁电控制设备可以以高收率通过使用该电影而获得，并因此的制造设备寻求一个porcess已经找到。

7. 发明公开

EP0368588A2 Pyroelectric infrared detector and manufacturing method of same 失效
标题翻译： Pyroelektrischer infraroter Detektor und dessen Herstellungsverfahren。
公开(公告)号：EP0368588A2
公开(公告)日：1990-05-16
申请号：EP89311464.5
申请日：1989-11-06
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Tomita, Yoshihiro , Takayama, Ryoichi , Ogawa, Hisahito , Nomura, Koji , Asayama, Junko , Abe, Atsushi
IPC分类号： G08B13/18
CPC分类号： G08B13/191
摘要： In a pyroelectric infrared detector, there is provided a slit which interrupts an infrared image which is incident to a pyroelectric element array, and respective pyroelectric elements forming one row of the pyroelectric element array are wired so that they are connected in series electrically and adjacent pyroelectric elements generate counter-electromotive forces. An infrared image irradiated on respective pyroelectric elements is scanned successively by the movement of the slit in a row direction on the pyroelectric element array, thus obtaining an infrared image which is being irradiated onto respective pyroelectric elements from time series signals produced at both ends of the pyroelectric element array.
摘要翻译：在热电型红外线检测器中，设置有中断入射到热电元件阵列的红外图像的狭缝，并且形成一排热电元件阵列的各个热电元件被布线，使得它们串联连接并且邻近热电元件产生反电动势。通过热电元件阵列上的行方向上的狭缝的移动，依次扫描对各个热电元件照射的红外线图像，从而从在两个热电元件的两端产生的时间序列信号获得正在照射到各个热电元件上的红外图像热电元件阵列

8. 发明授权

EP0075273B1 Ultrasonic transducer 失效
标题翻译：超声波传感器
公开(公告)号：EP0075273B1
公开(公告)日：1986-01-22
申请号：EP82108514.9
申请日：1982-09-15
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Takayama, Ryoichi , Tokushima, Akira , Ueshiba, Nozomu , Ise, Yukihiko
IPC分类号： G10K11/02 , H04R17/10
CPC分类号： G10K11/025 , G10K9/122 , G10K9/22 , H04R17/10

9. 发明授权

EP0844466B1 Temperature sensor element and temperature sensor including the same 失效
标题翻译：温度传感元件和温度传感器，从而
公开(公告)号：EP0844466B1
公开(公告)日：2003-02-19
申请号：EP97309279.4
申请日：1997-11-18
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Tomozawa, Atsushi , Fujii, Eiji , Torii, Hideo , Takayama, Ryoichi
IPC分类号： G01K7/22 , H01C7/04
CPC分类号： G01K7/223 , H01C7/041 , H01C7/043 , H01C17/30

10. 发明公开

EP0839653A3 Ink jet recording apparatus and its manufacturing method 失效
标题翻译：其制备方法，一种喷墨记录装置和方法
公开(公告)号：EP0839653A3
公开(公告)日：1999-06-30
申请号：EP97118744.8
申请日：1997-10-28
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Takayama, Ryoichi , Takshima, Yuji , Tanaka, Eiichiro , Ikeda, Koji , Kawasaki, Osamu , Miura, Masayoshi
IPC分类号： B41J2/045
CPC分类号： B41J2/06 , B41J2/14008 , B41J2/14233 , B41J2002/061 , B41J2002/14379
摘要： The invention relates to an ink jet recording apparatus comprising a pressure chamber (1) for accommodating an ink liquid, a nozzle (2) communicating with this pressure chamber (1) for discharging said ink liquid, and pressure applying means for applying a pressure to said pressure chamber (1),
wherein said pressure applying means includes a diaphragm (6) formed in said pressure chamber (1), and a piezoelectric element (5) made of a monocrystalline or polycrystalline piezoelectric member highly oriented along a polarization axis showing perovskite structure, mainly composed of lead zirconate titanate or barium titanate, for vibrating the diaphragm (6), and a specified voltage is applied at least to said piezoelectric element (5) when discharging said ink liquid into a recording medium disposed at the front side of said nozzle (2).

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