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1. 发明公开

EP1420451A3 Semiconductor non-volatile memory device and method for fabricating the same 审中-公开
标题翻译：一种非易失性半导体存储装置及其制造方法
公开(公告)号：EP1420451A3
公开(公告)日：2007-10-03
申请号：EP03026150.7
申请日：2003-11-13
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD
发明人： Ito, Toyoji , Fujii, Eiji , Umeda, Kazuo
IPC分类号： H01L27/115 , H01L21/02 , H01L21/8247
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device includes: a lower hydrogen-barrier film (19); a capacitor (27) formed on the lower hydrogen-barrier film and including a lower electrode (24), a capacitive insulating film (25), and an upper electrode (26); an interlayer dielectric film (28) formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film (29) covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

2. 发明授权

EP0736905B1 Semiconductor device having capacitor and manufacturing method thereof 失效
标题翻译：具有电容器及其制造方法的半导体器件
公开(公告)号：EP0736905B1
公开(公告)日：2006-01-04
申请号：EP96110018.7
申请日：1994-08-03
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Arita, Koji , Fujii, Eiji , Shimada, Yasuhiro , Uemoto, Yasuhiro , Inoue, Atsuo , Nasu, Toru , Matsuda, Akihiro , Nagano, Yoshihisa , Matsuura, Taketoshi , Otsuki, Tatsuo
IPC分类号： H01L27/115 , H01L21/3205 , H01L29/92
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958

3. 发明授权

EP0887864B1 Semiconductor device with capacitor and method for fabricating the same 失效
标题翻译：具有电容器及其制造方法的半导体器件
公开(公告)号：EP0887864B1
公开(公告)日：2005-10-19
申请号：EP98111608.0
申请日：1998-06-24
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Nagano, Yoshihisa , Kutsunai, Toshie , Judai, Yuji , Uemoto, Yasuhiro , Fujii, Eiji
IPC分类号： H01L27/108 , H01L21/8242 , H01L27/115 , H01L21/8247 , H01L21/768
CPC分类号： H01L27/1085 , H01L21/76895 , H01L23/5223 , H01L28/55 , H01L2924/0002 , H01L2924/00

4. 发明公开

EP1058276A3 Thin film thermistor element and method for the fabrication of thin film thermistor element 有权
标题翻译： Dünnschichtthermistor和Herstellungsverfahren
公开(公告)号：EP1058276A3
公开(公告)日：2004-01-28
申请号：EP00304729.7
申请日：2000-06-05
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Fujii, Eiji , Tomozawa, Atsushi , Torii, Hideo , Takayama, Ryoichi
IPC分类号： H01C7/02 , H01C7/12
CPC分类号： H01C17/12 , H01C7/023 , Y10T428/24917
摘要： A thin film thermistor element 10 is formed by forming on a backing substrate 11 of alumina a thermistor thin film 12 and a pair of comb electrodes 13 and 14 formed of a thin film of Pt. The thermistor thin film 12, which is formed of, for example, complex oxide of Mn-Co-Ni, has either a spinel type crystal structure which is priority oriented or oriented mainly in a (100) surface or a bixbite type crystal structure which is priority oriented in a (100) or (111) surface. Alternatively, the thermistor thin film is formed of LaCoO 3 and has a rhombohedral bixbite type crystal structure. This makes it possible to hold the variation in resistance value low thereby to achieve high accuracy, and the deterioration with time can be held low and the high temperature durability can be improved, for the achievement of high reliability.
摘要翻译：通过在氧化铝的背衬基板11上形成热敏电阻薄膜12和由Pt的薄膜形成的一对梳状电极13和14来形成薄膜热敏电阻元件10。由例如Mn-Co-Ni的复合氧化物形成的热敏电阻薄膜12具有尖晶石型晶体结构，该尖晶石型晶体结构主要以（100）表面或双键型晶体结构为主要取向或取向，在（100）或（111）表面优先考虑。或者，热敏电阻薄膜由LaCoO 3形成，并具有菱形双面型晶体结构。这使得可以将电阻值的变化保持为低，从而实现高精度，并且为了实现高可靠性，能够将劣化随时间变得低而提高耐高温性。

5. 发明授权

EP0738013B1 Manufacturing method of semiconductor device having a high dielectric constant capacitor 失效
标题翻译：具有高介电常数电容器的半导体器件的制造方法
公开(公告)号：EP0738013B1
公开(公告)日：2003-10-15
申请号：EP96110011.2
申请日：1994-08-03
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Arita, Koji , Fujii, Eiji , Shimada, Yasuhiro , Uemoto, Yasuhiro , Inoue, Atsuo , Nasu, Toru , Matsuda, Akihiro , Nagano, Yoshihisa , Matsuura, Taketoshi , Otsuki, Tatsuo
IPC分类号： H01L27/115 , H01L21/3205 , H01L29/92
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11585 , H01L27/1159 , H01L28/40 , H01L28/55 , H01L28/60 , H01L28/75 , Y10S438/958

6. 发明公开

EP1221711A3 Plasma display panel suitable for high-quality display and production method 失效
标题翻译：等离子显示面板适合高质量的显示和制作方法
公开(公告)号：EP1221711A3
公开(公告)日：2002-12-18
申请号：EP02006620.5
申请日：1996-12-13
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Aoki, Masaki , Torii, Hideo , Fujii, Eiji , Ohtani, Mitsuhiro , Inami, Takashi , Kawamura, Hiroyuki , Tanaka, Hiroyoshi , Murai, Ryuichi , Ishikura, Yasuhisa , Nishimura, Yutaka , Yamashita, Katsuyoshi
IPC分类号： H01J17/49 , C03C17/34
CPC分类号： C23C16/404 , C23C16/403 , H01J9/02 , H01J11/12 , H01J11/38 , H01J11/40 , H01J11/50 , H01J2211/38 , H01J2211/40 , H01J2211/50 , Y10T117/1004 , Y10T117/1008
摘要： The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer (14) protecting the dielectric glass layer (13). To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectric glass layer (13), a protecting layer (14) consisting of an alkaline earth oxide with (100)-face or (110)-face orientation. The protecting layer (14), which may be formed by using thermal Chemical Vapor Deposition (CVD) method, plasma enhanced CVD method, or a vapor deposition method with irradiation of ion or electron beam, will have a high sputtering resistance and effectively protects the dielectric glass layer (13). Such a protecting layer (14) contributes to the improvement of the panel life.
摘要翻译：本发明的第一个目的是提供一种具有改进的面板亮度的PDP，其通过改进从放电能量到可见光的转换效率来实现。本发明的第二个目的是提供一种通过改进保护介电玻璃层（13）的保护层（14）而实现的具有改进的面板寿命的PDP。为了实现第一个目的，本发明将放电气体中的氙的量设定为10体积％至小于100体积％的范围，并且将放电气体的充电压力设定为500至760Torr的范围这比传统的充电压力更高。采用这种结构，面板亮度增加。而且，为了实现第二个目的，本发明在电介质玻璃层（13）的表面上具有由具有（100）面或（110）面取向的碱土氧化物构成的保护层（14）。通过使用热化学气相沉积（CVD）法，等离子体增强CVD法或利用离子束或电子束照射的气相沉积法可形成的保护层（14）将具有高溅射阻抗并且有效地保护电介质玻璃层（13）。这种保护层（14）有助于提高面板寿命。

7. 发明公开

EP1221708A2 Plasma display panel suitable for high-quality display and production method 失效
标题翻译： Plasmaanzeigetafel geeignetfürAnzeige hoherQualitätund Herstellungsverfahren
公开(公告)号：EP1221708A2
公开(公告)日：2002-07-10
申请号：EP02006618.9
申请日：1996-12-13
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Aoki, Masaki , Torii, Hideo , Fujii, Eiji , Ohtani, Mitsuhiro , Inami, Takashi , Kawamura, Hiroyuki , Tanaka, Hiroyoshi , Murai, Ryuichi , Ishikura, Yasuhisa , Nishimura, Yutaka , Yamashita, Katsuyoshi
IPC分类号： H01J9/02 , H01J17/49
CPC分类号： C23C16/404 , C23C16/403 , H01J9/02 , H01J11/12 , H01J11/38 , H01J11/40 , H01J11/50 , H01J2211/38 , H01J2211/40 , H01J2211/50 , Y10T117/1004 , Y10T117/1008
摘要： The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer protecting the dielectrics glass layer. To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectrics glass layer, a protecting layer consisting of an alkaline earth oxide with (100)-face or (110)-face orientation. The protecting layer, which may be formed by using thermal Chemical Vapor Deposition (CVD) method, plasma enhanced CVD method, or a vapor deposition method with irradiation of ion or electron beam, will have a high sputtering resistance and effectively protect the dielectrics glass layer. Such a protecting layer contributes to the improvement of the panel life.
摘要翻译：本发明的第一个目的是提供一种具有改进的面板亮度的PDP，其通过提高从放电能量到可见光的转换效率来实现。本发明的第二个目的是提供一种改善面板寿命的PDP，其通过改进保护电介质玻璃层的保护层来实现。为了实现第一个目的，本发明将放电气体中的氙的量设定为10体积％至小于100体积％的范围，并且将放电气体的充电压力设定在500至760乇的范围内这高于常规的充气压力。通过这样的结构，面板亮度增加。此外，为了实现第二个目的，本发明在电介质玻璃层的表面上具有由具有（100）面或（110）面取向的碱土金属氧化物构成的保护层。可以通过使用热化学气相沉积（CVD）法，等离子体增强CVD法或通过离子或电子束照射的气相沉积法形成的保护层将具有高的溅射电阻并有效地保护电介质玻璃层。这样的保护层有助于提高面板寿命。

8. 发明公开

EP1164620A2 Plasma display panel suitable for high-quality display and production method 失效
标题翻译：用于显示高品质的合适的等离子体显示面板及其制造方法
公开(公告)号：EP1164620A2
公开(公告)日：2001-12-19
申请号：EP01116788.9
申请日：1996-12-13
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Aoki, Masaki , Torii, Hideo , Fujii, Eiji , Ohtani, Mitsuhiro , Inami, Takashi , Kawamura, Hiroyuki , Tanaka, Hiroyoshi , Murai, Ryuichi , Ishikura, Yasuhisa , Nishimura, Yutaka , Yamashita, Katsuyoshi
IPC分类号： H01J17/04 , H01J17/20 , H01J17/49 , H01J9/02
CPC分类号： C23C16/404 , C23C16/403 , H01J9/02 , H01J11/12 , H01J11/38 , H01J11/40 , H01J11/50 , H01J2211/38 , H01J2211/40 , H01J2211/50 , Y10T117/1004 , Y10T117/1008
摘要： The first object of the present invention is to provide a PDP with improved panel brightness which is achieved by improving the efficiency in conversion from discharge energy to visible rays. The second object of the present invention is to provide a PDP with improved panel life which is achieved by improving the protecting layer protecting the dielectrics glass layer. To achieve the first object, the present invention sets the amount of xenon in the discharge gas to the range of 10% by volume to less than 100% by volume, and sets the charging pressure for the discharge gas to the range of 500 to 760Torr which is higher than conventional charging pressures. With such construction, the panel brightness increases. Also, to achieve the second object, the present invention has, on the surface of the dielectrics glass layer, a protecting layer consisting of an alkaline earth oxide with (100)-face or (110)-face orientation. The protecting layer, which may be formed by using thermal Chemical Vapor Deposition (CVD) method, plasma enhanced CVD method, or a vapor deposition method with irradiation of ion or electron beam, will have a high sputtering resistance and effectively protect the dielectrics glass layer. Such a protecting layer contributes to the improvement of the panel life.

9. 发明公开

EP0617439A3 Thin film capacitor and method of manufacturing the same 无效
标题翻译：薄膜电容器及其制造方法。
公开(公告)号：EP0617439A3
公开(公告)日：1997-10-15
申请号：EP94104693.0
申请日：1994-03-24
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Fujii, Eiji , Tomozawa, Atsushi , Torii, Hideo , Hattori, Masumi , Takayama, Ryoichi , Fujii, Satoru
IPC分类号： H01G4/20
CPC分类号： H01G4/20 , H01L2224/4918 , H01L2924/181 , H01L2924/00012
摘要： A NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal electrode are sequentially laminated on a metal electrode, thus providing a thin film capacitor. Or alternatively, a thin film capacitor is manufactured by sequentially laminating a NaCl oxide thin layer oriented to (100) face or a spinel oxide thin layer oriented to (100) face, a platinum thin layer as a lower electrode oriented to (100) face, a perovskite dielectric thin layer oriented to (100) face and a metal thin layer as an upper electrode on a substrate. A plasma-enhanced CVD method is applied to form a NaCl oxide thin layer, a spinel oxide thin layer and a perovskite dielectric thin layer while a vacuum deposition method, a sputtering method, a CVD method or a plasma-enhanced CVD method is applied for the formation of a metal electrode.

10. 发明授权

EP0617440B1 Laminated thin film capacitor and method for producing the same 失效
标题翻译：一种薄膜电容器和方法及其制备
公开(公告)号：EP0617440B1
公开(公告)日：1997-03-05
申请号：EP94104369.7
申请日：1994-03-19
申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
发明人： Tomozawa, Atsushi , Fujii, Eiji , Torii, Hideo , Hattori, Masumi , Fujii, Satoru , Takayama, Ryoichi
IPC分类号： H01G4/30
CPC分类号： H01G4/306

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