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1. 发明公开

EP1666939A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL RESONATOR 有权
标题翻译： ZWEIDIMENSIONALER光电发生器KRISTALLRESONATOR
公开(公告)号：EP1666939A1
公开(公告)日：2006-06-07
申请号：EP04772076.8
申请日：2004-08-24
申请人： Kyoto University , Sumitomo Electric Industries, Ltd.
发明人： NODA, Susumu , ASANO, Takashi, 2-108 Katsura-Daini-Goudoushukusha , SONG, Bong-Shik , AKAHANE, Yoshihiro
IPC分类号： G02B6/12
CPC分类号： B82Y20/00 , G02B6/1225
摘要： The present invention intends to provide a two-dimensional photonic crystal resonator having a high Q-value. The slab-shaped body 21 is provided with cyclically arranged holes 22. The body 21 is divided into three areas 31-33 with the holes 22 arranged with cycle distances of a 1 in area 31 and a 2 in areas 32 and 33, which is smaller than a 1 . A waveguide 23 passing through the three areas is formed by linearly eliminating the holes 22. The waveguide 23 thus formed can propagate rays of light within a wavelength band that depends on the cycle distance of the holes 22. The cycle distance of the holes in the area 31 differs from that of the areas 32 and 33, and the wavelength band of the light propagating through the waveguide accordingly differs. Therefore, a ray of light whose wavelength is within the waveguide transmission wavelength band of the area 31 but outside of the waveguide transmission wavelength band of the other areas 32 and 33 will be confined within the waveguide of the area 31 and resonate therein. Thus, the waveguide in the area 31 functions as a resonator.
摘要翻译：本发明旨在提供具有高Q值的二维光子晶体谐振器。板状体21设置有周期性布置的孔22.主体21被分成三个区域31-33，其中孔22布置成具有区域31中的循环距离1和区域32和33中的2，小于1。穿过三个区域的波导23通过线性地消除孔22形成。如此形成的波导23可以在取决于孔22的循环距离的波长带内传播光线。孔中的循环距离区域31与区域32和33的区别不同，并且通过波导传播的光的波段相应地不同。因此，其波长在区域31的波导传输波长带内，但在其他区域32和33的波导传输波长带之外的光线将被限制在区域31的波导内并在其中谐振。因此，区域31中的波导用作谐振器。

2. 发明公开

EP4311043A1 PHOTONIC CRYSTAL SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SAME 审中-实审
公开(公告)号：EP4311043A1
公开(公告)日：2024-01-24
申请号：EP22771148.8
申请日：2022-03-04
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , Kyoto University
发明人： FUJIWARA, Naoki , KONO, Naoya , FURUYA, Akira , ITO, Yuki , NODA, Susumu , INOUE, Takuya , ISHIZAKI, Kenji
IPC分类号： H01S5/11 , H01S5/185 , H01S5/20
摘要： A photonic crystal surface-emitting laser includes a light emitting region from which light is emitted in a direction crossing an in-plane direction, and a current blocking region that is adjacent to the light emitting region in the in-plane direction and in which current is less likely to flow than in the light emitting region. The light emitting region and the current blocking region each include a photonic crystal layer. The photonic crystal layer has a first region and second regions periodically arranged in the in-plane direction in the first region. A refractive index of each of the second regions is different from a refractive index of the first region. The light emitting region includes a first semiconductor layer having a first conductivity type, an active layer having an optical gain, and a second semiconductor layer having a second conductivity type. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on top of one another in an emission direction of the light.

3. 发明公开

EP4266516A1 PHOTONIC CRYSTAL SURFACE EMISSION LASER AND METHOD FOR MANUFACTURING SAME 审中-实审
公开(公告)号：EP4266516A1
公开(公告)日：2023-10-25
申请号：EP21906170.2
申请日：2021-10-29
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD. , Kyoto University
发明人： KONO, Naoya , ITO, Yuki , FUJIWARA, Naoki , NODA, Susumu , INOUE, Takuya , DE ZOYSA, Menaka , ISHIZAKI, Kenji
IPC分类号： H01S5/183 , H01S5/11
摘要： A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.

4. 发明授权

EP1666939B1 TWO-DIMENSIONAL PHOTONIC CRYSTAL RESONATOR 有权
标题翻译：二维光子晶体谐振器
公开(公告)号：EP1666939B1
公开(公告)日：2018-04-04
申请号：EP04772076.8
申请日：2004-08-24
申请人： Kyoto University , Sumitomo Electric Industries, Ltd.
发明人： NODA, Susumu , ASANO, Takashi, 2-108 Katsura-Daini-Goudoushukusha , SONG, Bong-Shik , AKAHANE, Yoshihiro
IPC分类号： G02B6/12
CPC分类号： B82Y20/00 , G02B6/1225
摘要： The present invention intends to provide a two-dimensional photonic crystal resonator having a high Q-value. The slab-shaped body 21 is provided with cyclically arranged holes 22. The body 21 is divided into three areas 31-33 with the holes 22 arranged with cycle distances of a 1 in area 31 and a 2 in areas 32 and 33, which is smaller than a 1 . A waveguide 23 passing through the three areas is formed by linearly eliminating the holes 22. The waveguide 23 thus formed can propagate rays of light within a wavelength band that depends on the cycle distance of the holes 22. The cycle distance of the holes in the area 31 differs from that of the areas 32 and 33, and the wavelength band of the light propagating through the waveguide accordingly differs. Therefore, a ray of light whose wavelength is within the waveguide transmission wavelength band of the area 31 but outside of the waveguide transmission wavelength band of the other areas 32 and 33 will be confined within the waveguide of the area 31 and resonate therein. Thus, the waveguide in the area 31 functions as a resonator.

5. 发明公开

EP1659431A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL MULTIPLEXER/DEMULTIPLEXER 有权
标题翻译： ZWEIDIMENSIONALER多路复用器/ DEMULTIPLEXER MIT PHOTONISCHEM KRISTALL
公开(公告)号：EP1659431A1
公开(公告)日：2006-05-24
申请号：EP04772075.0
申请日：2004-08-24
申请人： Japan Science and Technology Agency , Sumitomo Electric Industries, Ltd.
发明人： NODA, Susumu , ASANO, Takashi, 2-108 Katsura-Daini-Goudoushukusha , AKAHANE, Yoshihiro, Sumitomo Electric Ind., Ltd.
IPC分类号： G02B6/12
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/1225
摘要： An object of the present invention is to provide a multiplexer/demultiplexer capable of preventing a decrease in multiplexing/demultiplexing efficiency due to an error in wavelength or due to a crosstalk with other wavelengths. A two-dimensional photonic crystal having holes 22 cyclically arranged is provided with an input waveguide 23 and an output waveguide 24. Located between the two waveguides are two point-like defects 25 and 26, each consisting of a region devoid of the holes 22. From the light including various wavelengths and propagating through the input waveguide 23, the two point-like defects extract a ray of light having a wavelength determined by the shape of the point-like defects and introduce it into the output waveguide 24. Compared with the case where there is only one point-like defect, the above-described construction increases the values of the wavelength spectrum of the extracted light at around the resonance wavelength and decreases the values at the wavelength range far from the resonance wavelength. Therefore, the increase in the values of the wavelength spectrum at around the resonance wavelength ensures that the light having the desired wavelength can be extracted from the waveguide by a large amount even if the wavelength of the light propagating through the waveguide is erroneously shifted from the resonance frequency. Occurrence of noises within a wavelength range far from the resonance wavelength and extraction of light having the wavelengths of adjacent channels are also suppressed.
摘要翻译：本发明的目的是提供一种能够防止由于波长错误或由于与其它波长的串扰而导致的复用/解复用效率降低的多路复用器/解复用器。具有循环布置的孔22的二维光子晶体设置有输入波导23和输出波导24.位于两个波导之间的是两个点状缺陷25和26，每个由缺少孔22的区域组成。从包括各种波长的光并且通过输入波导23传播的光，两个点状缺陷提取具有由点状缺陷的形状确定的波长的光线并将其引入输出波导24中。与只有一个点状缺陷的情况，上述结构增加了谐振波长附近的提取光的波长谱的值，并且减小了远离谐振波长的波长范围内的值。因此，即使在波导传播的光的波长被错误地偏离波导的波长的波长的波长附近，谐振波长周围的波长值的增加也能够从波导中提取具有期望波长的光，谐振频率。在远离谐振波长的波长范围内的噪声的发生和具有相邻波道的波长的光的提取也被抑制。

6. 发明授权

EP1659431B1 TWO-DIMENSIONAL PHOTONIC CRYSTAL MULTIPLEXER/DEMULTIPLEXER 有权
标题翻译：用结晶光子二维多路复用器/多路分用器
公开(公告)号：EP1659431B1
公开(公告)日：2012-05-09
申请号：EP04772075.0
申请日：2004-08-24
申请人： Japan Science and Technology Agency , Sumitomo Electric Industries, Ltd.
发明人： NODA, Susumu , ASANO, Takashi, 2-108 Katsura-Daini-Goudoushukusha , AKAHANE, Yoshihiro, Sumitomo Electric Ind., Ltd.
IPC分类号： G02B6/122 , G02B6/12 , B82Y20/00
CPC分类号： G02B6/12007 , B82Y20/00 , G02B6/1225
摘要： An input waveguide (23) and an output waveguide (24) are provided on a two-dimensional photonic crystal comprising cyclically-disposed vacancies (22), and two spot-like defects (25, 26) deficlient in vacancies (22) are provided between the both waveguides, thereby preventing a decrease in wavelength-error-caused efficiency and cross talk with other wavelengths in a two-dimensional photonic crystal slab multiplexer/demultiplexer.

7. 发明公开

EP3930120A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL PLANE EMISSION LASER 审中-公开
公开(公告)号：EP3930120A1
公开(公告)日：2021-12-29
申请号：EP20758933.4
申请日：2020-02-04
申请人： Kyoto University
发明人： NODA, Susumu , INOUE, Takuya , YOSHIDA, Masahiro , DE ZOYSA, Menaka
IPC分类号： H01S5/18
摘要： A two-dimensional photonic-crystal surface-emitting laser 10 includes an active layer 11; and a photonic-crystal layer 12 including a two-dimensional photonic-crystal light-amplification portion 123 that is a first two-dimensional photonic-crystal region provided in a plate-shaped base body 121 disposed on one side of the active layer 11, and includes an amplification-portion photonic band gap 15 which is a photonic band gap formed between two photonic bands having a band edge at a predetermined point in a reciprocal lattice space, and a two-dimensional photonic-crystal light-reflection portion 125 that is a second two-dimensional photonic-crystal region provided around the two-dimensional photonic-crystal light-amplification portion 123, and includes a reflection-portion photonic band gap 16 which is a photonic band gap formed between two photonic bands having a band edge at the predetermined point of the reciprocal lattice space, wherein energy ranges of the amplification-portion photonic band gap 15 and the reflection-portion photonic band gap 16 partially overlap and are different.

8. 发明公开

EP3588704A1 SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER 有权
公开(公告)号：EP3588704A1
公开(公告)日：2020-01-01
申请号：EP18757376.1
申请日：2018-02-27
申请人： Kyoto University , Stanley Electric Co., Ltd.
发明人： NODA, Susumu , TANAKA, Yoshinori , DE ZOYSA, Menaka , SONODA, Junichi , KOIZUMI, Tomoaki , EMOTO, Kei
IPC分类号： H01S5/18 , C23C16/34 , C30B29/38 , H01L21/205 , H01S5/12 , H01S5/343
摘要： A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method according to the present invention comprises: (a) a step of growing a first cladding layer of a first conductive type on a substrate; (b) a step of growing a first optical guide layer of said first conductive type on said first cladding layer; (c) a step of forming holes having a two-dimensional periodicity in a plane parallel to said first optical guide layer, in said first optical guide layer by etching; (d) a step of supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of said holes, thereby closing the openings of said holes; and (e) a step of planarizing said recessed portions by mass transport, after said openings of said holes have been closed, wherein after said planarizing step has been performed, at least one of side surfaces of said hole is a {10-10} facet.

9. 发明公开

EP2523220A1 SOLAR CELL, SOLAR CELL PANEL, AND DEVICE COMPRISING SOLAR CELL 审中-公开
标题翻译： SOLARZELLE，SOLARZELLENTAFEL UND VORRICHTUNG MIT SOLARZELLE
公开(公告)号：EP2523220A1
公开(公告)日：2012-11-14
申请号：EP10842206.4
申请日：2010-12-22
申请人： Sharp Kabushiki Kaisha , Kyoto University
发明人： SHIGETA, Hiroaki , YASHIRO, Yuhji , TSUDA, Yuhsuke , MIYANISHI, Shintaro , NODA, Susumu , FUJITA, Masayuki , TANAKA, Yoshinori
IPC分类号： H01L31/04
CPC分类号： H01L31/035227 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/0392 , H01L31/03921 , H01L31/054 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. Q V which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Q α which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).
摘要翻译：本发明的太阳能电池（1）包括光电转换层（2）和设置在光电转换层（2）内的光子晶体，以具有光子带隙。光子晶体具有缺陷（31），以提供光子带隙中的缺陷水平。 QV是表示通过光子晶体与外部之间的耦合产生的共振效应的大小的Q值，基本上等于表示由光电转换层的介质产生的共振效应的大小的Q值的Q± （2）。

10. 发明公开

EP4131677A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER 审中-实审
公开(公告)号：EP4131677A1
公开(公告)日：2023-02-08
申请号：EP21781958.0
申请日：2021-03-17
申请人： Kyoto University , MITSUBISHI ELECTRIC CORPORATION
发明人： NODA, Susumu , DE ZOYSA, Menaka , ISHIZAKI, Kenji , KUNISHI, Wataru , ENOKI, Kentaro
IPC分类号： H01S5/183 , H01S5/18
摘要： A two-dimensional photonic-crystal laser 10 includes: a substrate 11 made of an n-type semiconductor; a p-type cladding layer (p-type semiconductor layer) 131 provided on an upper side of the substrate 11 and made of a p-type semiconductor; an active layer 14 provided on an upper side of the p-type cladding layer 131; a two-dimensional photonic-crystal layer 16 provided on an upper side of the active layer 14 and including a plate-shaped base body 161 made of an n-type semiconductor in which modified refractive index areas 162 whose refractive index differs from the base body 161 are periodically arranged; a first tunnel layer 121 provided between the substrate 11 and the p-type cladding layer 131 and made of an n-type semiconductor having a carrier density higher than a carrier density of the substrate 11; a second tunnel layer 122 provided in contact with the first tunnel layer 121 between the first tunnel layer 121 and the p-type cladding layer 131, and made of a p-type semiconductor having a carrier density higher than a carrier density of the p-type semiconductor layer; a first electrode 181 provided on a lower side of the substrate 11 or in the substrate 11; and a second electrode 182 provided on an upper side of the two-dimensional photonic-crystal layer 16.

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