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1. 发明公开

EP4415061A1 LIGHT-EMITTING DIODE ELEMENT 审中-实审
公开(公告)号：EP4415061A1
公开(公告)日：2024-08-14
申请号：EP22898358.1
申请日：2022-11-01
申请人： Kyoto University , Stanley Electric Co., Ltd.
发明人： NODA, Susumu , KASHIWAGI, Hiroyuki , IDE, Shunya , IWASAKI, Tessei , KAWAKAMI, Yasuyuki , YOKOBAYASHI, Yusuke
IPC分类号： H01L33/16 , H01L33/22
CPC分类号： H01L33/16 , H01L33/22
摘要： There are provided a substrate (11) with a moth-eye nano pattern (11M) on a surface of the substrate in which cone-shaped protrusions are periodically formed, a first semiconductor layer (21) configured to be formed on the moth-eye nano pattern (11M) and have a photonic crystal layer (21P), an active layer (23) configured to be formed on the first semiconductor layer (21) and have a light-emitting layer (23A), and a second semiconductor layer (25) configured to be formed on the active layer (23).

2. 发明公开

EP3930120A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL PLANE EMISSION LASER 审中-公开
公开(公告)号：EP3930120A1
公开(公告)日：2021-12-29
申请号：EP20758933.4
申请日：2020-02-04
申请人： Kyoto University
发明人： NODA, Susumu , INOUE, Takuya , YOSHIDA, Masahiro , DE ZOYSA, Menaka
IPC分类号： H01S5/18
摘要： A two-dimensional photonic-crystal surface-emitting laser 10 includes an active layer 11; and a photonic-crystal layer 12 including a two-dimensional photonic-crystal light-amplification portion 123 that is a first two-dimensional photonic-crystal region provided in a plate-shaped base body 121 disposed on one side of the active layer 11, and includes an amplification-portion photonic band gap 15 which is a photonic band gap formed between two photonic bands having a band edge at a predetermined point in a reciprocal lattice space, and a two-dimensional photonic-crystal light-reflection portion 125 that is a second two-dimensional photonic-crystal region provided around the two-dimensional photonic-crystal light-amplification portion 123, and includes a reflection-portion photonic band gap 16 which is a photonic band gap formed between two photonic bands having a band edge at the predetermined point of the reciprocal lattice space, wherein energy ranges of the amplification-portion photonic band gap 15 and the reflection-portion photonic band gap 16 partially overlap and are different.

3. 发明公开

EP3588704A1 SURFACE-EMITTING LASER AND METHOD FOR MANUFACTURING SURFACE-EMITTING LASER 有权
公开(公告)号：EP3588704A1
公开(公告)日：2020-01-01
申请号：EP18757376.1
申请日：2018-02-27
申请人： Kyoto University , Stanley Electric Co., Ltd.
发明人： NODA, Susumu , TANAKA, Yoshinori , DE ZOYSA, Menaka , SONODA, Junichi , KOIZUMI, Tomoaki , EMOTO, Kei
IPC分类号： H01S5/18 , C23C16/34 , C30B29/38 , H01L21/205 , H01S5/12 , H01S5/343
摘要： A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method according to the present invention comprises: (a) a step of growing a first cladding layer of a first conductive type on a substrate; (b) a step of growing a first optical guide layer of said first conductive type on said first cladding layer; (c) a step of forming holes having a two-dimensional periodicity in a plane parallel to said first optical guide layer, in said first optical guide layer by etching; (d) a step of supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of said holes, thereby closing the openings of said holes; and (e) a step of planarizing said recessed portions by mass transport, after said openings of said holes have been closed, wherein after said planarizing step has been performed, at least one of side surfaces of said hole is a {10-10} facet.

4. 发明公开

EP2523220A1 SOLAR CELL, SOLAR CELL PANEL, AND DEVICE COMPRISING SOLAR CELL 审中-公开
标题翻译： SOLARZELLE，SOLARZELLENTAFEL UND VORRICHTUNG MIT SOLARZELLE
公开(公告)号：EP2523220A1
公开(公告)日：2012-11-14
申请号：EP10842206.4
申请日：2010-12-22
申请人： Sharp Kabushiki Kaisha , Kyoto University
发明人： SHIGETA, Hiroaki , YASHIRO, Yuhji , TSUDA, Yuhsuke , MIYANISHI, Shintaro , NODA, Susumu , FUJITA, Masayuki , TANAKA, Yoshinori
IPC分类号： H01L31/04
CPC分类号： H01L31/035227 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/0392 , H01L31/03921 , H01L31/054 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. Q V which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Q α which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).
摘要翻译：本发明的太阳能电池（1）包括光电转换层（2）和设置在光电转换层（2）内的光子晶体，以具有光子带隙。光子晶体具有缺陷（31），以提供光子带隙中的缺陷水平。 QV是表示通过光子晶体与外部之间的耦合产生的共振效应的大小的Q值，基本上等于表示由光电转换层的介质产生的共振效应的大小的Q值的Q± （2）。

5. 发明公开

EP4300731A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER 审中-实审
公开(公告)号：EP4300731A1
公开(公告)日：2024-01-03
申请号：EP22759758.0
申请日：2022-02-24
申请人： Kyoto University
发明人： NODA, Susumu , DE ZOYSA, Menaka , SAKATA, Ryoichi , ISHIZAKI, Kenji , INOUE, Takuya , YOSHIDA, Masahiro
IPC分类号： H01S5/11 , H01S5/18
摘要： A two-dimensional photonic crystal laser includes: a pair of electrodes (a first electrode 171 and a second electrode 172); an active layer (11) provided between the pair of electrodes and configured to generate light of a predetermined wavelength upon being supplied with an electric current from the electrodes; and a two-dimensional photonic crystal layer (12) provided between any one of the pair of electrodes and the active layer (11) and including a plate-shaped base member (121) and a plurality of modified refractive index regions (122) disposed in the base member (121) and having a refractive index different from that of the base member (121), in which the plurality of modified refractive index regions (122) are disposed to be shifted by different shift amounts from respective lattice points of a two-dimensional lattice which are periodically disposed in the base member with a period corresponding to the predetermined wavelength, or/and are disposed at the respective lattice points with different areas, the shift amount or/and the area of each of the plurality of modified refractive index regions (122) is/are modified with a composite modulation period in which a plurality of periods different from each other are superposed on each other, and is/are expressed by a modulation phase Ψ(r↑) expressed using a vector r↑ indicating a position of each of the lattice points of the two-dimensional lattice, a vector k n ↑ indicating a combination of an inclination angle and an azimuthal angle of each of n (n is an integer of 2 or more) laser beams differing in the inclination angle and/or the azimuthal angle from each other, and an amplitude A n and a phase exp(iα n ) determined for each n as Ψ r ↑ = arg ∬ ∑ n A n exp i α n δ k ↑ − k n ↑ exp i k ↑ ⋅ r ↑ d k ↑ and
the amplitude A n and/or the phase exp(iα n ) for each value of n differ(s) from each other in at least two different values of n.

6. 发明公开

EP4131675A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER 审中-实审
公开(公告)号：EP4131675A1
公开(公告)日：2023-02-08
申请号：EP21781520.8
申请日：2021-03-30
申请人： Kyoto University
发明人： NODA, Susumu , YOSHIDA, Masahiro , DE ZOYSA, Menaka , ISHIZAKI, Kenji
IPC分类号： H01S5/18
摘要： Provided is a two-dimensional photonic-crystal laser capable of scanning with a laser beam and emitting the laser beam without the laser beam being attenuated by an electrode. A two-dimensional photonic-crystal laser 1 formed by sandwiching, between a first electrode 181 and a second electrode 182, a layered body 10 including an active layer 13 and a two-dimensional photonic-crystal layer 15 in which modified refractive index areas 152 having a refractive index different from a refractive index of a plate-shaped base body 151 are periodically arranged two-dimensionally on the base body 151. The first electrode 181 is divided into a plurality of partial electrodes 1811, and the second electrode 182 is a frame-shaped electrode including a frame-shaped portion 1821 made of a conductor, the second electrode 182 having a window portion 1822 which is a space inside the frame-shaped portion 1821 being arranged to face a region enclosing a plurality of the partial electrodes 1811. A lens 19 provided on the side opposite to the layered body 10 of the second electrode 182 in a manner covering the entire window portion 1822 is included.

7. 发明公开

EP2544320A1 PHOTONIC CRYSTAL LASER 审中-公开
标题翻译：光电子激光器
公开(公告)号：EP2544320A1
公开(公告)日：2013-01-09
申请号：EP11750620.4
申请日：2011-03-01
申请人： Kyoto University
发明人： NODA, Susumu , KITAMURA, Kyoko , KUROSAKA, Yoshitaka , SAKAI, Kyosuke
IPC分类号： H01S5/12 , H01S5/18
CPC分类号： H01S5/105 , B82Y20/00 , H01S5/0267 , H01S5/1071 , H01S5/187 , H01S5/34333 , H01S2301/14 , H01S2301/203
摘要： The present invention is aimed at providing a photonic crystal laser capable of producing a radially-polarized halo-shaped laser beam having a smaller width than that of conventional beams. A photonic crystal laser 10 includes: an active layer 11; a ring-shaped photonic crystal 123 including a plate-shaped base body 121 on one side of the active layer 11, the base body 121 having a number of modified refractive index areas 122 of the same shape, the modified refractive index areas 122 having a refractive index different from that of the base body 121 and being periodically arranged in the circumferential direction of a ring, and each of the modified refractive index areas 122 being asymmetrically shaped with respect to an axis extending through the center of the modified refractive index area 122 in the radial direction of the ring; a first electrode 131 and a second electrode 132 facing each other across the active layer 11 and the ring-shaped photonic crystal 123; and a window provided in the second electrode 141, the window being capable of allowing passage of a laser light generated from the ring-shaped photonic crystal 123.
摘要翻译：本发明旨在提供一种光子晶体激光器，其能够产生具有比常规光束更小的宽度的径向偏振的卤素激光束。光子晶体激光器10包括：有源层11; 在有源层11的一侧包括板状基体121的环状光子晶体123，基体121具有多个相同形状的改性折射率区域122，改性折射率区域122具有折射率不同于基体121的折射率并且周期性地沿环的周向布置，并且每个修改的折射率区域122相对于延伸穿过改性折射率区域122的中心的轴线是不对称的形状在环的径向方向; 通过有源层11和环状光子晶体123彼此面对的第一电极131和第二电极132; 以及设置在第二电极141中的窗口，窗口能够允许从环形光子晶体123产生的激光的通过。

8. 发明公开

EP2523219A1 PHOTOELECTRIC TRANSDUCER 审中-公开
标题翻译： PHOTOELEKTRISCHER UMWANDLER
公开(公告)号：EP2523219A1
公开(公告)日：2012-11-14
申请号：EP10842187.6
申请日：2010-12-17
申请人： Sharp Kabushiki Kaisha , Kyoto University
发明人： SHIGETA, Hiroaki , YASHIRO, Yuhji , TSUDA, Yuhsuke , NODA, Susumu , FUJITA, Masayuki , TANAKA, Yoshinori
IPC分类号： H01L31/04 , H01L31/10
CPC分类号： H01L31/02327
摘要： A photoelectric transducer (10) including: a semiconductor layer (13); and a photonic crystal (21) formed inside the semiconductor layer, the photonic crystal being formed by providing nanorods (19) inside the semiconductor layer, each of the nanorods having a refractive index lower than that of a medium of the semiconductor layer, the nanorods being provided two-dimensionally and periodically at a pitch of not less than λ/4 nor more than λ, where λ is a wavelength of a peak of resonance caused by the photonic crystal, the photoelectric transducer satisfying the following formula: 0.2 ⁢ Q V ≤ Q a ≤ 5.4 ⁢ Q V
where Qv is (a) a Q value which indicates a magnitude of an effect of resonance caused by coupling between the photonic crystal and an external world and (b) in proportion to a reciprocal of a coefficient κ V indicating a strength of the coupling between the photonic crystal and the external world, and Qa is (a) a Q value which indicates a magnitude of an effect of resonance caused by the medium of the semiconductor layer and (b) in proportion to a reciprocal of a coefficient αa of light absorption by the medium of the semiconductor layer. This allows an increase in light absorption ratio of a photoelectric transducer including a photonic crystal structure.
摘要翻译：一种光电变换器（10），包括：半导体层（13）; 和形成在所述半导体层内的光子晶体（21），所述光子晶体通过在所述半导体层内部提供纳米棒（19）而形成，所述纳米棒的折射率低于所述半导体层的介质的折射率，所述纳米棒以不小于»/ 4但不大于»的间距二维和周期性地设置，其中»是由光子晶体引起的共振峰值的波长，光电传感器满足以下公式：0.2 ¢QV ‰¤¤‰‰¤ ¢¢¢where where where where where（（（（（a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a 系数ºV表示光子晶体与外界之间的耦合强度，Qa为（a）Q值，表示由半导体层的介质引起的共振效应的大小，（b）i n与半导体层的介质的光吸收系数±a的倒数成比例。这允许包括光子晶体结构的光电转换器的光吸收率增加。

9. 发明公开

EP4395088A1 SURFACE-EMITTING LASER ELEMENT 审中-实审
公开(公告)号：EP4395088A1
公开(公告)日：2024-07-03
申请号：EP22878276.9
申请日：2022-09-08
申请人： Kyoto University , Stanley Electric Co., Ltd.
发明人： NODA, Susumu , INOUE, Takuya , KOIZUMI, Tomoaki , EMOTO, Kei
IPC分类号： H01S5/11
CPC分类号： H01S5/11
摘要： A first semiconductor layer that is provided on a substrate, an active layer that is provided on the first semiconductor layer, a second semiconductor layer that is provided on the active layer and is of an opposite conductive type from the first semiconductor layer, an air-hole layer that is included in the first semiconductor layer and includes an air hole disposed with a two-dimensional periodicity in a plane parallel to the active layer, and a reflection layer that is provided on the second semiconductor layer and has a reflection surface, are included. A light emission surface is provided on a rear surface of the substrate, the air-hole layer has a diffraction surface that is a symmetrical center surface when light standing in the air-hole layer is diffracted with an electric field amplitude symmetrical in a direction orthogonal to the air-hole layer, and a separation distance between the diffraction surface and the reflection surface is provided such that a light intensity of combined light of first diffracted light diffracted from the diffraction surface to a side of the light emission surface and second diffracted light diffracted from the diffraction surface to a side of the reflection layer and reflected on the reflection surface is larger than a light intensity of the first diffracted light.

10. 发明公开

EP4131677A1 TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER 审中-实审
公开(公告)号：EP4131677A1
公开(公告)日：2023-02-08
申请号：EP21781958.0
申请日：2021-03-17
申请人： Kyoto University , MITSUBISHI ELECTRIC CORPORATION
发明人： NODA, Susumu , DE ZOYSA, Menaka , ISHIZAKI, Kenji , KUNISHI, Wataru , ENOKI, Kentaro
IPC分类号： H01S5/183 , H01S5/18
摘要： A two-dimensional photonic-crystal laser 10 includes: a substrate 11 made of an n-type semiconductor; a p-type cladding layer (p-type semiconductor layer) 131 provided on an upper side of the substrate 11 and made of a p-type semiconductor; an active layer 14 provided on an upper side of the p-type cladding layer 131; a two-dimensional photonic-crystal layer 16 provided on an upper side of the active layer 14 and including a plate-shaped base body 161 made of an n-type semiconductor in which modified refractive index areas 162 whose refractive index differs from the base body 161 are periodically arranged; a first tunnel layer 121 provided between the substrate 11 and the p-type cladding layer 131 and made of an n-type semiconductor having a carrier density higher than a carrier density of the substrate 11; a second tunnel layer 122 provided in contact with the first tunnel layer 121 between the first tunnel layer 121 and the p-type cladding layer 131, and made of a p-type semiconductor having a carrier density higher than a carrier density of the p-type semiconductor layer; a first electrode 181 provided on a lower side of the substrate 11 or in the substrate 11; and a second electrode 182 provided on an upper side of the two-dimensional photonic-crystal layer 16.

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