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1. 发明公开

EP2523220A1 SOLAR CELL, SOLAR CELL PANEL, AND DEVICE COMPRISING SOLAR CELL 审中-公开
标题翻译： SOLARZELLE，SOLARZELLENTAFEL UND VORRICHTUNG MIT SOLARZELLE
公开(公告)号：EP2523220A1
公开(公告)日：2012-11-14
申请号：EP10842206.4
申请日：2010-12-22
申请人： Sharp Kabushiki Kaisha , Kyoto University
发明人： SHIGETA, Hiroaki , YASHIRO, Yuhji , TSUDA, Yuhsuke , MIYANISHI, Shintaro , NODA, Susumu , FUJITA, Masayuki , TANAKA, Yoshinori
IPC分类号： H01L31/04
CPC分类号： H01L31/035227 , H01L31/0232 , H01L31/02327 , H01L31/035281 , H01L31/0392 , H01L31/03921 , H01L31/054 , H01L31/075 , Y02E10/52 , Y02E10/548
摘要： A solar cell (1) of the present invention includes a photoelectric conversion layer (2) and a photonic crystal provided inside the photoelectric conversion layer (2) in order to have a photonic band gap. The photonic crystal has defects (31) in order to provide a defect level in the photonic band gap. Q V which is a Q value representing a magnitude of a resonance effect yielded by coupling between the photonic crystal and an outside is substantially equal to Q α which is a Q value representing a magnitude of a resonance effect yielded by a medium of the photoelectric conversion layer (2).
摘要翻译：本发明的太阳能电池（1）包括光电转换层（2）和设置在光电转换层（2）内的光子晶体，以具有光子带隙。光子晶体具有缺陷（31），以提供光子带隙中的缺陷水平。 QV是表示通过光子晶体与外部之间的耦合产生的共振效应的大小的Q值，基本上等于表示由光电转换层的介质产生的共振效应的大小的Q值的Q± （2）。

2. 发明公开

EP2523219A1 PHOTOELECTRIC TRANSDUCER 审中-公开
标题翻译： PHOTOELEKTRISCHER UMWANDLER
公开(公告)号：EP2523219A1
公开(公告)日：2012-11-14
申请号：EP10842187.6
申请日：2010-12-17
申请人： Sharp Kabushiki Kaisha , Kyoto University
发明人： SHIGETA, Hiroaki , YASHIRO, Yuhji , TSUDA, Yuhsuke , NODA, Susumu , FUJITA, Masayuki , TANAKA, Yoshinori
IPC分类号： H01L31/04 , H01L31/10
CPC分类号： H01L31/02327
摘要： A photoelectric transducer (10) including: a semiconductor layer (13); and a photonic crystal (21) formed inside the semiconductor layer, the photonic crystal being formed by providing nanorods (19) inside the semiconductor layer, each of the nanorods having a refractive index lower than that of a medium of the semiconductor layer, the nanorods being provided two-dimensionally and periodically at a pitch of not less than λ/4 nor more than λ, where λ is a wavelength of a peak of resonance caused by the photonic crystal, the photoelectric transducer satisfying the following formula: 0.2 ⁢ Q V ≤ Q a ≤ 5.4 ⁢ Q V
where Qv is (a) a Q value which indicates a magnitude of an effect of resonance caused by coupling between the photonic crystal and an external world and (b) in proportion to a reciprocal of a coefficient κ V indicating a strength of the coupling between the photonic crystal and the external world, and Qa is (a) a Q value which indicates a magnitude of an effect of resonance caused by the medium of the semiconductor layer and (b) in proportion to a reciprocal of a coefficient αa of light absorption by the medium of the semiconductor layer. This allows an increase in light absorption ratio of a photoelectric transducer including a photonic crystal structure.
摘要翻译：一种光电变换器（10），包括：半导体层（13）; 和形成在所述半导体层内的光子晶体（21），所述光子晶体通过在所述半导体层内部提供纳米棒（19）而形成，所述纳米棒的折射率低于所述半导体层的介质的折射率，所述纳米棒以不小于»/ 4但不大于»的间距二维和周期性地设置，其中»是由光子晶体引起的共振峰值的波长，光电传感器满足以下公式：0.2 ¢QV ‰¤¤‰‰¤ ¢¢¢where where where where where（（（（（a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a a 系数ºV表示光子晶体与外界之间的耦合强度，Qa为（a）Q值，表示由半导体层的介质引起的共振效应的大小，（b）i n与半导体层的介质的光吸收系数±a的倒数成比例。这允许包括光子晶体结构的光电转换器的光吸收率增加。

3. 发明公开

EP2523221A1 PHOTOELECTRIC TRANSDUCER 审中-公开
标题翻译：光电玩家WANDLER
公开(公告)号：EP2523221A1
公开(公告)日：2012-11-14
申请号：EP10842207.2
申请日：2010-12-22
申请人： Sharp Kabushiki Kaisha , Kyoto University
发明人： SHIGETA, Hiroaki , YASHIRO, Yuhji , TSUDA, Yuhsuke , NODA, Susumu , FUJITA, Masayuki , TANAKA, Yoshinori
IPC分类号： H01L31/04
CPC分类号： H01L31/0232 , H01L31/0248 , H01L31/04 , H01L31/0547 , Y02E10/52
摘要： A photoelectric conversion element (1) of the present invention includes: a photoelectric conversion layer (2); and a photonic crystal provided inside the photoelectric conversion layer (2) to provide a photonic band gap, the photonic crystal being designed such that nanorods (30) whose refraction index is smaller than that of a medium of the photoelectric conversion layer (2) are provided periodically inside the photoelectric conversion layer (2), and there are provided defects (31) to provide a defect level in the photonic band gap, when a wavelength of a resonance peak corresponding to the defect level is λ, the nanorods (30) are provided two-dimensionally with a pitch of not less than λ/7 and not more than λ/2, and a coefficient κ v indicative of strength of coupling between the photonic crystal and the outside is substantially equal to a coefficient a of absorption of light by the photoelectric conversion layer (2).
摘要翻译：本发明的光电转换元件（1）包括：光电转换层（2）; 以及设置在所述光电转换层（2）内部以提供光子带隙的光子晶体，所述光子晶体被设计成使得其折射率小于所述光电转换层（2）的介质的折射率的纳米棒（30）是周期性地设置在光电转换层（2）内，当提供与缺陷电平对应的谐振峰值的波长为»时，存在提供光子带隙中的缺陷水平的缺陷（31），纳米棒（30）以不小于»/ 7且不大于»/ 2的间距二维地提供，并且指示光子晶体和外部之间的耦合强度的系数νv基本上等于吸收的系数a 由光电转换层（2）发光。

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