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1. 发明公开

EP4280277A1 POWER SEMICONDUCTOR MODULE ARRANGEMENT AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE ARRANGEMENT 审中-公开
公开(公告)号：EP4280277A1
公开(公告)日：2023-11-22
申请号：EP22173416.3
申请日：2022-05-16
申请人： Infineon Technologies AG
发明人： ARENS, Andre , DE BOCK, Jens , SPITZER, Dietmar , ZHANG, Xi
IPC分类号： H01L25/16 , G01R15/18 , G01R15/20 , H01L23/62 , H01L25/07
摘要： A power semiconductor module arrangement comprises a housing (7), a substrate (10) comprising a substrate layer (11) and a first metallization layer (111) deposited on a first side of the substrate layer (11), and arranged inside the housing (7) or forming a bottom of the housing (7); a printed circuit board (81) arranged inside the housing (7), vertically above and in parallel to the substrate (10); a plurality of electrically conducting components arranged on the printed circuit board (81) and on the substrate (10), an encapsulant (5) at least partly filling the interior of the housing (7), thereby covering the substrate (10), and a magnetic field sensor (900) configured to detect the strength of a magnetic field; wherein either the magnetic field sensor (900) is arranged on the substrate (10) within the range of a magnetic field caused by a current flowing through one of the electrically conducting components (950) arranged on the printed circuit board (81), or the magnetic field sensor (900) is arranged on the printed circuit board (81) within the range of a magnetic field caused by a current flowing through one of the electrically conducting components (950) arranged on the substrate (10), the magnetic field sensor (900) is electrically insulated from the respective electrically conducting component (950), and the power semiconductor module arrangement further comprises evaluation means configured to determine the current flowing through the electrically conducting component (950) based on the strength of the magnetic field detected by the magnetic field sensor (900).

2. 发明公开

EP4227986A1 POWER SEMICONDUCTOR MODULE ARRANGEMENT AND METHODS FOR PRODUCING A SEMICONDUCTOR ARRANGEMENT 审中-公开
公开(公告)号：EP4227986A1
公开(公告)日：2023-08-16
申请号：EP22156054.3
申请日：2022-02-10
申请人： Infineon Technologies AG
发明人： LASSMANN, Matthias , ARENS, Andre , BOENIG, Guido , LUDWIG, Marco
IPC分类号： H01L23/055 , H01L23/053 , H01L23/16 , H01L25/07
摘要： A power semiconductor module arrangement comprises a housing (7), a substrate (10) arranged inside the housing (7), a printed circuit board (81) arranged inside the housing (7) distant from and in parallel to the substrate (10), an encapsulant (5) at least partly filling the interior of the housing (7), thereby covering the substrate (10) and the printed circuit board (81), and a heat protective layer (52) arranged inside the housing (7) between the substrate (10) and the printed circuit board (81), and extending in a plane that is parallel to the substrate (10) and the printed circuit board (81), wherein a thermal resistance of the heat protective layer (52) is greater than a thermal resistance of the encapsulant (5).

3. 发明公开

EP4195893A1 HOUSING FOR A POWER SEMICONDUCTOR MODULE ARRANGEMENT 审中-实审
公开(公告)号：EP4195893A1
公开(公告)日：2023-06-14
申请号：EP21212681.7
申请日：2021-12-07
申请人： Infineon Technologies AG
发明人： HERBRANDT, Alexander , ARENS, Andre , BRAEUTIGAM, Philipp , LUDWIG, Marco
IPC分类号： H05K7/20 , H01L23/40 , F16B41/00
摘要： An arrangement comprises a housing and a printed circuit board arranged vertically above the housing, wherein the housing comprises sidewalls, at least one protrusion attached to the sidewalls and arranged on the outside of the housing at a lower end of the housing distant from the printed circuit board, wherein at least one first through hole is provided in the at least one protrusion, a plurality of holding devices, wherein each holding device is arranged inside a first through hole and/or between the printed circuit board and the first through hole, and a plurality of fastening elements configured to attach the housing to a heat sink or base plate, wherein each of the plurality of holding devices is configured to clamp a different one of the fastening elements such that the fastening elements are secured in defined positions, and to align each of the fastening elements with a different one of the first through holes, the printed circuit board comprises a plurality of second through holes, wherein each of the second through holes is arranged vertically above and aligned with a different one of the plurality of fastening elements, a diameter of each of the second through holes is less than the largest diameter of the respective fastening element, and when a defined force is exerted on the fastening elements, the fastening elements are configured to move vertically through the respective first through holes in a direction away from the printed circuit board.

4. 发明公开

EP4187585A2 POWER MODULE WITH INTEGRATED GATE DRIVER AND FUNCTIONAL COMPONENTS WITHIN A SINGLE POWER MODULE HOUSING 审中-实审
公开(公告)号：EP4187585A2
公开(公告)日：2023-05-31
申请号：EP22205806.7
申请日：2022-11-07
申请人： Infineon Technologies AG
发明人： ARENS, Andre
IPC分类号： H01L23/04 , H01L25/07 , H01L25/16 , H01L23/538 , H02M7/00
摘要： An apparatus comprising a power module housing (100) is suggested. The power module housing (100) includes a conductive substrate (104); a circuit board (112) positioned within the power module housing separate from the conductive substrate (104); an insulation material (136) electrically insulating the conductive substrate (104) from the circuit board (112); a gate driver (114) mounted to the circuit board (112); at least one power device (110) mounted to the conductive substrate (104) and controlled by the gate driver (114); and a monitoring component (106, 108) mounted to at least the conductive substrate (104) and operatively coupled to the gate driver (114) and the power device (110).

5. 发明公开

EP3926679A1 POWER SEMICONDUCTOR MODULE ARRANGEMENT COMPRISING A TEMPERATURE SENSOR 审中-公开
公开(公告)号：EP3926679A1
公开(公告)日：2021-12-22
申请号：EP20180535.5
申请日：2020-06-17
申请人： Infineon Technologies AG
发明人： JANSEN, Uwe , ARENS, Andre , KRUSCHEL, Wolfram
IPC分类号： H01L25/07 , H01L23/34 , H01L23/49
摘要： A power semiconductor module arrangement (100) comprises a substrate (10) comprising a dielectric insulation layer (11), and a first metallization layer (111) arranged on a first side of the dielectric insulation layer (11), at least one semiconductor die (20) mounted on the first metallization layer (111) of the substrate (10), and at least one temperature sensor arrangement. Each of the at least one temperature sensor arrangement comprises a temperature sensor (210), a first connection piece (32), thermally and electrically coupling the temperature sensor (210) to one of the at least one semiconductor die (20), and a second connection piece (34), electrically coupling the temperature sensor (210) to a first sense terminal element (42). A maximum dimension of a cross-section of the first connection piece (32) of each of the at least one temperature sensor arrangement is greater than a maximum dimension of a cross-section of the respective second connection piece (34).

6. 发明公开

EP3731413A1 GATE DRIVER CIRCUIT AND METHOD FOR DRIVING A GATE OF A FIELD-EFFECT TRANSISTOR 审中-公开
公开(公告)号：EP3731413A1
公开(公告)日：2020-10-28
申请号：EP19171257.9
申请日：2019-04-26
申请人： Infineon Technologies AG
发明人： ARENS, Andre
IPC分类号： H03K17/082
摘要： A gate driver circuit is described that comprises a field-effect transistor having a gate electrode, a drain electrode, and a source electrode; a gate driver configured to provide a first voltage to the gate electrode of the field-effect transistor in accordance with an input signal; and a protection circuit coupled to the drain electrode and to the gate electrode and configured to apply a second voltage to the gate electrode when a source-drain voltage of the field-effect transistor exceeds a threshold voltage.

7. 发明公开

EP4270466A1 POWER SEMICONDUCTOR MODULE ARRANGEMENTS AND METHODS FOR PRODUCING POWER SEMICONDUCTOR MODULE ARRANGEMENTS 审中-公开
公开(公告)号：EP4270466A1
公开(公告)日：2023-11-01
申请号：EP22169656.0
申请日：2022-04-25
申请人： Infineon Technologies AG
发明人： ARENS, Andre , GOLDAMMER, Martin
IPC分类号： H01L23/053 , H01L23/24 , H01L25/07
摘要： A power semiconductor module arrangement comprises, a housing comprising sidewalls, a lid, and one or more protrusions, a substrate arranged inside the housing or forming a bottom of the housing, a plurality of electronic or electrically conducting components arranged on the substrate, and an encapsulant partly filling the interior of the housing, thereby covering the substrate, wherein each of the one or more protrusions extends from the lid of the housing in a vertical direction towards the substrate, wherein the vertical direction is a direction perpendicular to the substrate and the lid, a lower end of each of the one or more protrusions is either arranged directly above a separate one of the plurality of electronic or electrically conducting components, or within a defined radius around a separate one of the plurality of electronic or electrically conducting components, wherein the defined radius is less than 2mm, and wherein the lower end of a protrusion is the end facing away from the lid and towards the substrate, and the encapsulant has a generally flat surface and forms one or more elevations, wherein each of the one or more elevations encloses an upper end of a different one of the plurality of electronic or electrically conducting components, and encloses the lower end of a respective one of the one or more protrusions, wherein the upper end of an electronic or electrically conducting component is an end facing away from the substrate and towards the lid.

8. 发明公开

EP3929973A1 A POWER SEMICONDUCTOR MODULE AND A METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE 有权
公开(公告)号：EP3929973A1
公开(公告)日：2021-12-29
申请号：EP20181421.7
申请日：2020-06-22
申请人： Infineon Technologies AG
发明人： NOTTELMANN, Regina , ARENS, Andre , EBLI, Michael , HERBRANDT, Alexander , SCHWARZER, Ulrich Michael Georg , TAKKAC, Alparslan
IPC分类号： H01L23/049 , H01L23/373 , H01L23/40
摘要： A method for producing a power semiconductor module arrangement comprises arranging at least one semiconductor substrate (10) in a housing (40), each semiconductor substrate (10) comprising a dielectric insulation layer (11) and a first metallization layer (111) attached to the dielectric insulation layer (11), and the housing (40) comprising at least one through hole (64) extending through a component (66, 662) of the housing (40), inserting at least one pin or bolt (62) into the at least one through hole (64), wherein an upper end of the pin or bolt (62) is not inserted into the through hole (64), arranging a printed circuit board (44) on the housing (40), arranging the housing (40) on a heat sink (12), the heat sink (12) comprising at least one hole (64), wherein the housing (40) is arranged on the heat sink (12) such that each of the at least one through hole (64) is aligned with one of the at least one hole (64) in the heat sink (12), and using a first pressing tool (70), thereby exerting a force on at least one defined contact area of the printed circuit board (44) and pressing each of the at least one pin or bolt (62) into the respective hole (64) in the heat sink (12), wherein each of the at least one defined contact area is arranged directly above one of the at least one pin or bolt (62).

9. 发明公开

EP4257943A1 TEMPERATURE SENSOR ARRANGEMENT IN SEMICONDUCTOR MODULE 审中-公开
公开(公告)号：EP4257943A1
公开(公告)日：2023-10-11
申请号：EP23164677.9
申请日：2023-03-28
申请人： Infineon Technologies AG
发明人： ARENS, Andre , EBLI, Michael
IPC分类号： G01K1/14 , G01K1/02 , H01L25/07 , H01L23/34 , H01L23/538 , H01L23/053 , H01L23/373 , H01L23/498
摘要： A semiconductor module includes a first circuit carrier including one or more heat generating elements mounted on an upper surface of the first circuit carrier, a second circuit carrier mounted over the first circuit carrier and being vertically spaced apart from the upper surface of the first circuit carrier, and a temperature sensor that is fixedly attached to the second circuit carrier and is arranged in a vertical space between the lower surface of the second circuit carrier and the upper surface of the first circuit carrier, wherein the temperature sensor is arranged in sufficient proximity to a first one of the heat generating elements to obtain a direct temperature measurement from the first one of the heat generating elements.

10. 发明公开

EP4187585A3 POWER MODULE WITH INTEGRATED GATE DRIVER AND FUNCTIONAL COMPONENTS WITHIN A SINGLE POWER MODULE HOUSING 审中-实审
公开(公告)号：EP4187585A3
公开(公告)日：2023-08-30
申请号：EP22205806.7
申请日：2022-11-07
申请人： Infineon Technologies AG
发明人： ARENS, Andre
IPC分类号： H01L23/04 , H01L25/07 , H01L25/16 , H01L23/538 , H02M7/00
摘要： An apparatus comprising a power module housing (100) is suggested. The power module housing (100) includes a conductive substrate (104); a circuit board (112) positioned within the power module housing separate from the conductive substrate (104); an insulation material (136) electrically insulating the conductive substrate (104) from the circuit board (112); a gate driver (114) mounted to the circuit board (112); at least one power device (110) mounted to the conductive substrate (104) and controlled by the gate driver (114); and a monitoring component (106, 108) mounted to at least the conductive substrate (104) and operatively coupled to the gate driver (114) and the power device (110).

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