专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP0648857A1 Confinement of secondary electrons in plasma ion processing 失效
标题翻译： Begrenzung vonSekundärelektronenbei der Plasmaionenbehandlung。
公开(公告)号：EP0648857A1
公开(公告)日：1995-04-19
申请号：EP94113190.6
申请日：1994-08-24
申请人： Hughes Aircraft Company
发明人： Matossian, Jesse N. , Williams, John D.
IPC分类号： C23C14/48 , B05D3/06
CPC分类号： H01J37/32412 , C23C14/48 , H01J37/3233 , H01J2237/026
摘要： A plasma ion implantation apparatus (50) includes a vacuum chamber (52) that receives an object (70) to be ion implanted within its walls (66). The object (70) is supported upon an electrically conductive base (72) that is electrically isolated from the wall (66) of the vacuum chamber (52). An electrically conductive enclosure (74) is positioned between the object (70) and the wall (66) of the vacuum chamber (52) and supported upon the base (72). The enclosure (74) is made of an electrically conductive material. A plasma source (58) is positioned so as to create a plasma (68) in the vicinity of the object (70) to be implanted. A voltage source (78) applies an electrical voltage (-V₀) to be base (72) and thence the enclosure (74) relative to the wall (66) of the vacuum chamber (52). Secondary electrons (80) emitted from the object (70) during ion implantation are reflected back (82) to the plasma (68) by the enclosure (74), reducing X-ray production and improving plasma efficiency.
摘要翻译：等离子体离子注入装置（50）包括真空室（52），该真空室（52）接收离子注入其壁（66）内的物体（70）。物体（70）被支撑在与真空室（52）的壁（66）电隔离的导电基座（72）上。导电外壳（74）位于物体（70）和真空室（52）的壁（66）之间，并被支撑在基座（72）上。外壳（74）由导电材料制成。等离子体源（58）被定位成在被植入物体（70）附近产生等离子体（68）。电压源（78）相对于真空室（52）的壁（66）施加作为基座（72）的电压（-V0），并且随后的外壳（74）。在离子注入期间从物体（70）发射的二次电子（80）通过外壳（74）反射回（82）到等离子体（68），减少X射线产生并提高等离子体效率。

2. 发明公开

EP0480689A2 Ion implantation and surface processing method and apparatus 失效
标题翻译： Verfahren undGerätzur Ionenimplantierung undOberflächenbehandlung。
公开(公告)号：EP0480689A2
公开(公告)日：1992-04-15
申请号：EP91309241.7
申请日：1991-10-09
申请人： Hughes Aircraft Company
发明人： Goebel, Dan M. , Matossian, Jesse N.
IPC分类号： H01J37/32 , H01J37/317 , C30B31/22 , C23C14/48
CPC分类号： H01J37/32697 , C23C14/48 , H01J37/3171 , H01J37/32 , H01J37/32412 , H01J37/32422
摘要： A capacitor (58) is charged to a high potential or voltage from a power source (52). A plasma switch, (56) preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor (58) into an object (12) for implantation with ions from a plasma (19) in a plasma source ion implantation apparatus (10). The periodic discharge results in the application of high voltage negative pulses to the object (12), causing ions from the plasma (19) to be accelerated toward, and implanted into the object (12). A pulse transformer (92) is preferably provided between the plasma switch (56) and capacitor (58), and the object (12) to step up the voltage of the pulses and enable the plasma switch (56) to operate at lower voltage levels. The plasma switch (56) enables high duty factor and power operation, and may be combined with arc detection and suppression circuitry (64) to prevent arcing between the object (12) and plasma (19). A second power source (52), capacitor (58), and plasma switch (56) may be provided to apply positive pulses to the object (12) in alternation with the negative pulses to cause generation of the plasma, or to accelerate electrons into the object (12) for performing thermally assisted ion implantation, surface annealing, and the like.
摘要翻译：电容器（58）从电源（52）充电到高电位或电压。等离子体开关（56）优选地是CROSSATRON调制器开关，周期性地闭合并打开，以将电容器（58）放电到用于在等离子体源离子注入装置（10）中等离子体（19）离子注入的物体）。周期性放电导致向对象（12）施加高电压负脉冲，导致来自等离子体（19）的离子被加速并且被注入到物体（12）中。脉冲变压器（92）优选地设置在等离子体开关（56）和电容器（58）之间，并且物体（12）升高脉冲的电压，并使等离子体开关（56）能够以较低的电压水平。等离子体开关（56）实现高占空因数和功率操作，并且可以与电弧检测和抑制电路（64）组合以防止物体（12）和等离子体（19）之间的电弧。可以提供第二电源（52），电容器（58）和等离子体开关（56），以与负脉冲交替地向对象（12）施加正脉冲以引起等离子体的产生，或者将电子加速用于进行热辅助离子注入，表面退火等的物体（12）。

3. 发明公开

EP0603864A3 Surface potential control in plasma processing of materials 失效
标题翻译：在材料的等离子体处理的表面电势的调节。
公开(公告)号：EP0603864A3
公开(公告)日：1996-01-31
申请号：EP93120724.5
申请日：1993-12-22
申请人： Hughes Aircraft Company
发明人： Matossian, Jesse N. , Schumacher, Robert W. , Pepper, David M.
IPC分类号： C23C14/48 , C23C14/32 , C23C8/36 , B29C71/04
CPC分类号： C23C8/36 , B29C59/14 , B29C2035/0872 , B29C2035/0877 , C23C14/32 , C23C14/48
摘要： An object (30) is plasma processed by placing an electrically conducting grid (34) over all or a portion of the surface (32) of the object (30) so that the grid (34) generally follows the contours of the surface (32) but is displaced outwardly from the surface (32). Ions or electrons from a plasma surrounding the object (30) are accelerated into the surface (32) of the object (30) using as a processing driving force an electrical potential (40) applied to the electrically conducting grid (34). The use of a contoured conducting grid (34) allows plasma processing of large, electrically nonconducting objects (30) and objects (30) having sharp surface features (31) or recesses (33).

4. 发明公开

EP0645461A1 Heat treatment by plasma electron heating and solid/gas jet cooling 失效
标题翻译：用于通过等离子体的电子和加热的方法热处理和由固体/气体冷却剂射流的装置的方法和设备。
公开(公告)号：EP0645461A1
公开(公告)日：1995-03-29
申请号：EP94113287.0
申请日：1994-08-25
申请人： Hughes Aircraft Company
发明人： Matossian, Jesse N. , Williams, John D. , Krone-Schmidt, Wilfried
IPC分类号： C21D1/38
CPC分类号： C21D1/38 , C21D1/09 , C21D1/28 , C21D1/613 , C21D1/773 , C21D9/32 , C23C8/36
摘要： A workpiece (44) is heated by first forming an ionized gas plasma (38) around the workpiece (44). A positive potential is applied to the workpiece (44) to accelerate electrons (50) from the plasma (38) into the workpiece (44). The workpiece (44) is uniformly surface heated by the energy directed into the workpiece (44) by the electrons (50). The workpiece (44) is cooled by providing a flow of a pressurized liquid material such as carbon dioxide having a triple point. The liquid material is expanded through a nozzle to form solid particles that contact the surface of the workpiece (44) and remove heat from it by sublimation.
摘要翻译：工件（44）通过在离子化气体的等离子体（38）围绕所述工件（44）第一成形加热。正电位被施加到工件（44），以加速从等离子体（38）插入到工件（44）的电子（50）。工件（44）是通过引导到工件（44）由电子（50）的能量加热一致的表面。如具有三态点的二氧化碳：工件（44）是通过提供加压液体材料流冷却。液体材料通过喷嘴膨胀，以形成接触工件（44）的表面，并且通过升华从它移除热量的固体颗粒。

5. 发明授权

EP0640696B1 Nondestructive determination of plasma processing treatment characteristics 失效
标题翻译：等离子处理工艺的特点，非破坏性检查
公开(公告)号：EP0640696B1
公开(公告)日：1996-12-27
申请号：EP94113385.2
申请日：1994-08-26
申请人： Hughes Aircraft Company
发明人： Matossian, Jesse N. , Vajo, John J.
IPC分类号： C23C14/22 , C23C14/48 , C23C14/54
CPC分类号： C23C14/54 , C23C14/22 , C23C14/48

6. 发明授权

EP0499215B1 Evaluation of the extent of wear of articles 失效
标题翻译：用于评价产品的磨损状况的方法。
公开(公告)号：EP0499215B1
公开(公告)日：1994-08-03
申请号：EP92102283.6
申请日：1992-02-12
申请人： Hughes Aircraft Company , GENERAL MOTORS CORPORATION
发明人： Matossian, Jesse N. , Mikkola, Paul H. , Bartelt, John L.
IPC分类号： G01N3/56
CPC分类号： G01N3/56 , Y10T83/866 , Y10T428/8305

7. 发明公开

EP0596496A1 High impedance plasma ion implantation method and apparatus 失效
标题翻译： Verfahren undGerätzur Ionenimplantierung mittels eines Hoch-Impendenz-Plasmas。
公开(公告)号：EP0596496A1
公开(公告)日：1994-05-11
申请号：EP93117908.9
申请日：1993-11-04
申请人： Hughes Aircraft Company
发明人： Schumacher, Robert W. , Matossian, Jesse N. , Goebel, Dan M.
IPC分类号： H01J37/32
CPC分类号： H01J37/32412
摘要： A high dose rate, high impedance plasma ion implantation method and apparatus are disclosed. The method and apparatus apply high voltage pulses to a target cathode (6) within an ionization chamber (2) to both sustain a plasma in the gas surrounding the target (6), and to implant ions from the plasma into the target (6) during at least a portion of each pulse. Operating at voltages in excess of 50 kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instalibity interaction between secondary electrons emitted from target (6) and a background pulsed plasma. The voltage pulses are at least about 50 kV, and preferably 100 kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50 - 1000 Hz range. The preferred gas pressure range is 1x10 -4 - 1x10- 3 Torr. Auxiliary electrodes (24a, 24b) can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instalibity interaction.
摘要翻译：公开了一种高剂量率，高阻抗等离子体离子注入方法和装置。该方法和装置对电离室（2）内的目标阴极（6）施加高电压脉冲以维持靶（6）周围的气体中的等离子体，并将离子从等离子体注入靶（6）在每个脉冲的至少一部分期间。在超过50kV的电压下工作，对于可靠地形成常规辉光放电而言太高，等离子体反而通过从靶（6）发射的二次电子和背景脉冲等离子体之间的束 - 等离子体不稳定相互作用而被维持。电压脉冲为至少约50kV，优选为100kV以上。脉冲持续时间优选小于8微秒，频率在50-1000Hz范围内。优选的气体压力范围是1×10 -4乇〜1×10 -3乇。辅助电极（24a，24b）可以在较低的压力下使用，以提供足够的种子电子来引发等离子体，其由束 - 等离子体不稳定性相互作用所持续。

8. 发明授权

EP0603864B1 Surface potential control in plasma processing of materials 失效
标题翻译：在材料的等离子体处理的表面电势的调节
公开(公告)号：EP0603864B1
公开(公告)日：1998-07-22
申请号：EP93120724.5
申请日：1993-12-22
申请人： Hughes Aircraft Company
发明人： Matossian, Jesse N. , Schumacher, Robert W. , Pepper, David M.
IPC分类号： C23C14/48 , C23C14/32 , C23C8/36 , B29C71/04
CPC分类号： C23C8/36 , B29C59/14 , B29C2035/0872 , B29C2035/0877 , C23C14/32 , C23C14/48

9. 发明授权

EP0480689B1 Ion implantation and surface processing method and apparatus 失效
标题翻译：用于离子注入和表面处理方法和装置
公开(公告)号：EP0480689B1
公开(公告)日：1996-12-04
申请号：EP91309241.7
申请日：1991-10-09
申请人： Hughes Aircraft Company
发明人： Goebel, Dan M. , Matossian, Jesse N.
IPC分类号： H01J37/32 , H01J37/317 , C30B31/22 , C23C14/48
CPC分类号： H01J37/32697 , C23C14/48 , H01J37/3171 , H01J37/32 , H01J37/32412 , H01J37/32422

10. 发明公开

EP0694353A2 Improved die tooling for metal working 失效
标题翻译： Verbessertes Presswerkzeug zur Metallbearbeitung
公开(公告)号：EP0694353A2
公开(公告)日：1996-01-31
申请号：EP95115734.6
申请日：1992-02-11
申请人： Hughes Aircraft Company
发明人： Matossian, Jesse N. , Wysocki, Joseph A. , Wilson, Robert G. , Yamagishi, Frederick G. , Ryntz, Edward F., Jr.
IPC分类号： B21J13/02 , C23C14/48
CPC分类号： C08J7/047 , B21D37/20 , B21J13/02 , C08J2363/00 , C08J2483/00 , C23C18/1204 , C23C18/1295
摘要： A process for working a workpiece (26) using a tool (22, 24, 30) of a preselected shape, wherein a substrate is furnished having the preselected shape of a metal-working tool (22, 24, 30) comprises the steps of forming the substrate of a zinc-based alloy and implanting nitrogen into the surface of the substrate to harden the surface of the substrate.
摘要翻译：一种使用预选形状的工具（22,24,30）对工件（26）进行加工的工艺，其特征在于，具有金属加工工具（22,24,30）的预选形状的衬底包括以下步骤：形成锌基合金的基材并将氮注入基材的表面以使基材的表面硬化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式