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1. 发明公开

EP0140294A3 Plasma processing method and apparatus for carrying out the same 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：EP0140294A3
公开(公告)日：1986-08-20
申请号：EP84112571
申请日：1984-10-18
申请人： HITACHI, LTD.
发明人： Otsubo, Toru , Aiuchi, Susumu , Kamimura, Takashi , Noguchi, Minoru , Fujii, Teru
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , C23C16/517 , H01J37/32155 , H01J37/32165
摘要： A plasma processing method and an apparatus for carrying out the method are disclosed in which a processing gas is introduced into a processing chamber (10, 25, 50), and a periodically amplitude- or frequency-modulated high-frequency voltage is applied to plasma generating means (13,14; 28,29; 56,48), to generate a discharge plasma and to carry out predetermined processing by the plasma.

2. 发明公开

EP0119455A2 Etching method and apparatus 失效
标题翻译：蚀刻方法和装置。
公开(公告)号：EP0119455A2
公开(公告)日：1984-09-26
申请号：EP84101441.8
申请日：1984-02-13
申请人： HITACHI, LTD.
发明人： Otsubo, Toru , Aiuchi, Susumu , Kamimura, Takashi
IPC分类号： C23F1/00
CPC分类号： H01J37/32935 , H01L21/302
摘要： The present invention consists in an etching method and apparatus wherein an optical image, which is reflected from a region of a dicing stripe pattern on a substrate (15) to be etched such as a semiconductor wafer is focused by a projecting optical system (17,18) during selective etching, the focused pattern is converted into an image signal by an image detector (19), a change of contrast in the region of the dicing stripe pattern is found from the image signal, and an end of the etching is decided on the basis of the found change of contrast.

3. 发明授权

EP0119455B1 Etching method and apparatus 失效
标题翻译：蚀刻方法和装置
公开(公告)号：EP0119455B1
公开(公告)日：1988-08-31
申请号：EP84101441.8
申请日：1984-02-13
申请人： HITACHI, LTD.
发明人： Otsubo, Toru , Aiuchi, Susumu , Kamimura, Takashi
IPC分类号： C23F1/00
CPC分类号： H01J37/32935 , H01L21/302

4. 发明公开

EP0140294A2 Plasma processing method and apparatus for carrying out the same 失效
标题翻译：为使用这种方法的等离子体处理方法和装置。
公开(公告)号：EP0140294A2
公开(公告)日：1985-05-08
申请号：EP84112571.9
申请日：1984-10-18
申请人： HITACHI, LTD.
发明人： Otsubo, Toru , Aiuchi, Susumu , Kamimura, Takashi , Noguchi, Minoru , Fujii, Teru
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , C23C16/517 , H01J37/32155 , H01J37/32165
摘要： A plasma processing method and an apparatus for carrying out the method are disclosed in which a processing gas is introduced into a processing chamber (10, 25, 50), and a periodically amplitude- or frequency-modulated high-frequency voltage is applied to plasma generating means (13,14; 28,29; 56,48), to generate a discharge plasma and to carry out predetermined processing by the plasma.

5. 发明授权

EP0140294B1 Plasma processing method and apparatus for carrying out the same 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：EP0140294B1
公开(公告)日：1990-04-25
申请号：EP84112571.9
申请日：1984-10-18
申请人： HITACHI, LTD.
发明人： Otsubo, Toru , Aiuchi, Susumu , Kamimura, Takashi , Noguchi, Minoru , Fujii, Teru
IPC分类号： H01J37/32
CPC分类号： H01J37/32146 , C23C16/517 , H01J37/32155 , H01J37/32165

6. 发明公开

EP0119455A3 Etching method and apparatus 失效
标题翻译：蚀刻方法和装置
公开(公告)号：EP0119455A3
公开(公告)日：1986-02-05
申请号：EP84101441
申请日：1984-02-13
申请人： HITACHI, LTD.
发明人： Otsubo, Toru , Aiuchi, Susumu , Kamimura, Takashi
IPC分类号： C23F01/00
CPC分类号： H01J37/32935 , H01L21/302
摘要： The present invention consists in an etching method and apparatus wherein an optical image, which is reflected from a region of a dicing stripe pattern on a substrate (15) to be etched such as a semiconductor wafer is focused by a projecting optical system (17,18) during selective etching, the focused pattern is converted into an image signal by an image detector (19), a change of contrast in the region of the dicing stripe pattern is found from the image signal, and an end of the etching is decided on the basis of the found change of contrast.

7. 发明授权

EP0687897B1 Method for making specimen 失效
标题翻译：样品制备方法
公开(公告)号：EP0687897B1
公开(公告)日：2003-09-10
申请号：EP95109035.6
申请日：1995-06-12
申请人： Hitachi, Ltd.
发明人： Itoh, Fumikazu , Nakata, Toshihiko , Ishitani, Tohru , Shimase, Akira , Yamaguchi, Hiroshi , Kamimura, Takashi
IPC分类号： G01N1/00 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/32 , H01J37/226 , H01J37/3005 , H01J37/304 , H01J2237/30466 , H01J2237/3114 , H01J2237/31745

8. 发明公开

EP0687897A1 Method for making specimen and apparatus thereof 失效
标题翻译： Verfahren und Vorrichtung zur Probenherstellung
公开(公告)号：EP0687897A1
公开(公告)日：1995-12-20
申请号：EP95109035.6
申请日：1995-06-12
申请人： HITACHI, LTD.
发明人： Itoh, Fumikazu , Nakata, Toshihiko , Ishitani, Tohru , Shimase, Akira , Yamaguchi, Hiroshi , Kamimura, Takashi
IPC分类号： G01N1/00 , H01J37/304
CPC分类号： H01J37/3056 , G01N1/32 , H01J37/226 , H01J37/3005 , H01J37/304 , H01J2237/30466 , H01J2237/3114 , H01J2237/31745
摘要： The present invention is intended to provide a method and an apparatus for making a specimen for use in observation through a transparent electron microscope, including a step for milling part of the specimen into a thin film part, which can be observed through a transparent electron microscope, by scanning and irradiating a focused ion beam onto the specimen, a step for observing a mark for detection of position provided on the specimen as a secondary charged particle image by scanning and irradiating a charged particle beam onto the specimen without irradiating the charged particle beam onto the portion to be milled into the thin film part during the step for milling, and a step for compensating positional drift of the focused ion beam during said step for milling in accordance with a result of the observation.
The present invention provides an effect to strikingly raise the efficiency of TEM observation since a specimen for use in TEM observation can be made by precisely milling a thin film part of the specimen even though positional drift of the focused ion beam is caused during milling.
摘要翻译：本发明旨在提供一种通过透明电子显微镜制造用于观察的样本的方法和装置，包括将部分样品切成薄膜部分的步骤，其可以通过透明电子显微镜观察通过将聚焦离子束扫描并照射到样本上，通过扫描并将带电粒子束照射到样本上而不照射带电粒子束来观察用于检测在样本上提供的位置的标记作为二次带电粒子图像的步骤在用于研磨的步骤期间在待研磨到薄膜部分的部分上，以及根据观察结果在所述铣削步骤期间补偿聚焦离子束的位置漂移的步骤。本发明提供了显着提高TEM观察效率的效果，因为即使在研磨中发生聚焦离子束的位置漂移，也可以通过精确地研磨试样的薄膜部分来进行TEM观察用的试样。

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