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1. 发明授权

EP2820681B1 HIGH THERMAL STABILITY REFERENCE STRUCTURE WITH OUT-OF-PLANE ANISOTROPY FOR MAGNETIC DEVICE APPLICATIONS 有权转让
标题翻译：用于磁性器件应用的具有平面外各向异性的高热稳定性参考结构
公开(公告)号：EP2820681B1
公开(公告)日：2017-12-20
申请号：EP13754577.8
申请日：2013-01-24
申请人： Headway Technologies, Inc. , Wang, Yu-jen , Kula, Witold , Tong, Ru-ying , Jan, Guenole
发明人： WANG, Yu-jen , KULA, Witold , TONG, Ru, Ying , JAN, Guenole
IPC分类号： H01L29/82 , H01F10/32 , H01F41/30
CPC分类号： H01L43/12 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B5/66 , G11B5/84 , G11C11/15 , G11C11/161 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/3295 , H01F41/305 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143
摘要： Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

2. 发明授权

EP2839501B1 FREE LAYER WITH HIGH THERMAL STABILITY FOR MAGNETIC DEVICE APPLICATIONS BY INSERTION OF A BORON DUSTING LAYER 有权转让
标题翻译：通过将BORDÜNNSCHICHT热稳定性用于高磁性器件应用中的自由层
公开(公告)号：EP2839501B1
公开(公告)日：2016-12-21
申请号：EP13777528.4
申请日：2013-04-17
申请人： Headway Technologies, Inc.
发明人： WANG, Yu-jen , KULA, Witold , TONG, Ru-Ying , JAN, Guenole
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , H01F10/32 , H01F41/30
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143

3. 发明公开

EP2820680A1 ENGINEERED MAGNETIC LAYER WITH IMPROVED PERPENDICULAR ANISOTROPY USING GLASSING AGENTS FOR SPINTRONIC APPLICATIONS 有权转让
标题翻译：具有改进的垂直各向异性USING GLASS资金用于自旋电子应用操纵磁性层
公开(公告)号：EP2820680A1
公开(公告)日：2015-01-07
申请号：EP12869818.0
申请日：2012-12-18
申请人： Headway Technologies, Inc. , Wang, Yu-jen , Tong, Ru-ying , Jan, Guenole
发明人： WANG, Yu-jen , TONG, Ru-ying , JAN, Guenole
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction (MTJ). The free layer may be a single layer or a composite and is comprised of one or more glassing agents that have a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. As a result, a CoFeB free layer, for example, selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
摘要翻译：一种磁性元件，是游离缺失盘一个worin自由层的第一和第二接口与一个垂直了Hk增强层和隧道势垒，分别产生增强的表面垂直各向异性以增加其在磁性隧道结（MTJ）的热稳定性。自由层可以是单层或复合材料和由一种或多种装配玻璃剂thathave在其中央部的第一浓度和第二浓度小于在邻近第一和第二接口区域中的第一浓度。其结果是，由CoFeB自由层，例如，有选择地沿第一和第二接口结晶但在含有玻璃剂提供所述退火温度的中间区域非晶特性的维持小于所述中间区域的结晶化温度。所述磁性元件可以是自旋电子器件的一部分，或作为在一个畴壁运动装置传播介质。

4. 发明授权

EP2926349B1 FREE LAYER WITH OUT-OF-PLANE ANISOTROPY FOR MAGNETIC DEVICE APPLICATIONS 有权转让
公开(公告)号：EP2926349B1
公开(公告)日：2019-04-10
申请号：EP13802493.0
申请日：2013-11-21
申请人： Headway Technologies, Inc.
发明人： WANG, Yu-jen , JAN, Guenole , TONG, Ru-ying
IPC分类号： H01F10/32 , H01F41/30

5. 发明公开

EP3340246A1 IMPROVED STORAGE ELEMENT FOR STT MRAM APPLICATIONS 有权转让
公开(公告)号：EP3340246A1
公开(公告)日：2018-06-27
申请号：EP18150684.1
申请日：2013-09-13
申请人： Headway Technologies, Inc.
发明人： KULA, Witold , JAN, Guenole , TONG, Ru-ying , WANG, Yu-jen
IPC分类号： G11C11/16 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

6. 发明授权

EP2896044B1 IMPROVED STORAGE ELEMENT FOR STT MRAM APPLICATIONS 有权转让
标题翻译：改进的STT MRAM应用存储元件
公开(公告)号：EP2896044B1
公开(公告)日：2018-01-10
申请号：EP13766212.8
申请日：2013-09-13
申请人： Headway Technologies, Inc.
发明人： KULA, Witold , JAN, Guenole , TONG, Ru-ying , WANG, Yu-jen
IPC分类号： G11C11/16 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.

7. 发明公开

EP2926349A1 FREE LAYER WITH OUT-OF-PLANE ANISOTROPY FOR MAGNETIC DEVICE APPLICATIONS 有权转让
标题翻译：新近OFFSET各向异性自由层用磁力设备的应用程序
公开(公告)号：EP2926349A1
公开(公告)日：2015-10-07
申请号：EP13802493.0
申请日：2013-11-21
申请人： Headway Technologies, Inc.
发明人： WANG, Yu-jen , JAN, Guenole , TONG, Ru-ying
IPC分类号： H01F10/32 , H01F41/30
CPC分类号： G11C11/161 , B82Y25/00 , B82Y40/00 , G01R33/00 , G01R33/093 , G01R33/098 , G01R33/1284 , G11B5/65 , G11B5/66 , G11B2005/0024 , G11B2005/3996 , H01F10/123 , H01F10/3272 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01F41/303 , H01L43/02 , H01L43/08 , H01L43/10 , H03B15/006
摘要： Synthetic antiferromagnetic (SAF) and synthetic ferrimagnetic (SyF) free layer structures are disclosed that reduce Ho (for a SAF free layer), increase perpendicular magnetic anisotropy (PMA), and provide higher thermal stability up to at least 400° C. The SAF and SyF structures have a FL1/DL1/spacer/DL2/FL2 configuration wherein FL1 and FL2 are free layers with PMA, the coupling layer induces antiferromagnetic or ferrimagnetic coupling between FL1 and FL2 depending on thickness, and DL1 and DL2 are dusting layers that enhance the coupling between FL1 and FL2. The SAF free layer may be used with a SAF reference layer in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Furthermore, a dual SAF structure is described that may provide further advantages in terms of Ho, PMA, and thermal stability.
摘要翻译：合成反铁磁（SAF）和合成铁（SYF）自由层结构盘游离缺失并减少何（为一个SAF自由层），垂直磁各向异性（PMA）增加，并提供更高的热稳定性高达至少400℃的SAF 和SYF结构具有FL1 / DL1 /间隔件/ DL2 / FL2配置worin FL1和FL2与PMA自由层，所述耦合层诱导反铁磁性或亚铁磁性耦合FL1和FL2之间取决于厚度，DL1和DL2中的除尘层并提高 FL1和FL2之间的耦合。该SAF自由层可以在STT-MRAM的存储器元件或在包括自旋转移振荡器自旋电子器件一个SAF参考层中。进一步，双SAF结构进行说明也可以在Ho，PMA，和热稳定性方面提供进一步的优点。

8. 发明授权

EP2820680B1 ENGINEERED MAGNETIC LAYER WITH IMPROVED PERPENDICULAR ANISOTROPY USING GLASSING AGENTS FOR SPINTRONIC APPLICATIONS 有权转让
标题翻译：工程磁层具有改善的垂直各向异性，使用玻璃剂进行自动应用
公开(公告)号：EP2820680B1
公开(公告)日：2017-11-08
申请号：EP12869818.0
申请日：2012-12-18
申请人： Headway Technologies, Inc. , Wang, Yu-jen , Tong, Ru-ying , Jan, Guenole
发明人： WANG, Yu-jen , TONG, Ru-ying , JAN, Guenole
IPC分类号： H01L43/10 , H01L43/12 , H01L43/08
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12

9. 发明公开

EP2839501A1 FREE LAYER WITH HIGH THERMAL STABILITY FOR MAGNETIC DEVICE APPLICATIONS BY INSERTION OF A BORON DUSTING LAYER 有权转让
标题翻译：具有高热稳定性的自由层适用于插入硼掺杂层的磁性器件应用
公开(公告)号：EP2839501A1
公开(公告)日：2015-02-25
申请号：EP13777528.4
申请日：2013-04-17
申请人： Headway Technologies, Inc.
发明人： WANG, Yu-jen , KULA, Witold , TONG, Ru-Ying , JAN, Guenole
IPC分类号： H01L21/00
CPC分类号： G01R33/091 , G11B5/3906 , H01F10/123 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T428/1114 , Y10T428/1143
摘要： A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400°C or higher, or following a subsequent anneal at 400°C or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400°C or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.
摘要翻译：沿着隧道势垒层和覆盖层的界面处的自由层的顶部和底部表面中的一者或两者形成含有硼或硼的除尘层，例如CoB或FeB以改善热稳定性，同时保持MTJ堆叠的其它磁性。每个防尘层具有0.2到20埃的厚度，并且可以以沉积的形式使用，或者在高达400℃或更高的温度下使用，或者在400℃或更高的随后退火之后使用。自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。得到的MTJ适用于STT-MRAM存储器元件或自旋电子器件。在高达400℃或更高的温度下在自由层中保持垂直磁各向异性。增强了Ku增强，并增加了用于STT-MRAM设计的存储单元的保留时间。

10. 发明公开

EP2896044A1 IMPROVED STORAGE ELEMENT FOR STT MRAM APPLICATIONS 有权转让
标题翻译： VERBESSERTES SPEICHERELEMENTFÜRSTT-MRAM-ANWENDUNGEN
公开(公告)号：EP2896044A1
公开(公告)日：2015-07-22
申请号：EP13766212.8
申请日：2013-09-13
申请人： Headway Technologies, Inc.
发明人： KULA, Witold , JAN, Guenole , TONG, Ru-ying , WANG, Yu-jen
IPC分类号： G11C11/16 , H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/08
摘要： An improved PMA STT MTJ storage element, and a method for forming it, are described. By inserting a suitable oxide layer between the storage and cap layers, improved PMA properties are obtained, increasing the potential for a larger Eb/kT thermal factor as well as a larger MR. Another important advantage is better compatibility with high processing temperatures, potentially facilitating integration with CMOS.
摘要翻译：描述了改进的PMA STT MTJ存储元件及其形成方法。通过在存储层和盖层之间插入合适的氧化物层，获得改进的PMA性质，增加更大的Eb / kT热因子的可能性以及较大的MR。另一个重要的优点是更好的与高处理温度的兼容性，有可能促进与CMOS的集成。

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