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1. 发明公开

EP2600397A4 METHOD FOR MANUFACTURING INTERPOSER 有权
标题翻译：方法用于生产中间电路
公开(公告)号：EP2600397A4
公开(公告)日：2016-12-21
申请号：EP11812310
申请日：2011-07-19
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , ARAKI KEISUKE
IPC分类号： H01L23/498 , B23K26/00 , H01L21/48
CPC分类号： B23K26/006 , B23K26/0006 , B23K26/0057 , B23K26/0622 , B23K26/0853 , B23K2201/40 , B23K2203/56 , H01L21/30608 , H01L21/486 , H01L23/49827 , H01L2924/0002 , H05K3/002 , H05K2203/107 , H01L2924/00
摘要： A method for manufacturing an interposer equipped with a plurality of through-hole electrodes comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region in the object; an etching step of anisotropically etching the object after the laser light converging step so as to advance etching selectively along the modified region and form a plurality of through holes in the object, each through hole being tilted with respect to a thickness direction of the object and having a rectangular cross section; an insulating film forming step of forming an insulating film on an inner wall of each through hole after the etching step; and a through-hole electrode forming step of inserting a conductor into the through holes so as to form the through-hole electrodes after the insulating film forming step; wherein the plurality of through holes are arranged such that the through holes aligning in the tilted direction are staggered in a direction perpendicular to the tilted direction as seen from a main face of the object.

2. 发明公开

EP2600392A4 LASER PROCESSING METHOD 审中-公开
公开(公告)号：EP2600392A4
公开(公告)日：2016-12-14
申请号：EP11812303
申请日：2011-07-19
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , ARAKI KEISUKE
IPC分类号： H01L21/306 , B23K26/00 , B23K26/38
CPC分类号： H01L21/30608 , B23K26/006 , B23K26/382 , B23K26/384 , B23K26/40 , B23K2201/35 , B23K2203/50 , H01L21/30604 , H01L21/486
摘要： A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging the laser light at the object so as to form the modified region along a part corresponding to the through hole in the object; an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object after the laser light converging step; and an etching step of etching the object so as to advance the etching selectively along the modified region and form the through hole after the etch resist film producing step; while the laser light converging step exposes the modified region to the outer surface of the object.

3. 发明公开

EP2599578A4 LASER PROCESSING METHOD 审中-公开
标题翻译： LASERVERARBEITUNGSVERFAHREN
公开(公告)号：EP2599578A4
公开(公告)日：2016-12-14
申请号：EP11812304
申请日：2011-07-19
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , ARAKI KEISUKE
IPC分类号： H01L21/306 , B23K26/00 , B23K26/38 , H01L21/48 , H05K3/00
CPC分类号： H05K3/002 , B23K26/006 , B23K26/382 , B23K26/384 , B23K26/40 , B23K2201/35 , B23K2203/50 , H01L21/30604 , H01L21/30625 , H01L21/486 , H05K2203/107
摘要： A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object; a laser light converging step of converging the laser light at the object after the etch resist film producing step so as to form the modified region along a part corresponding to the through hole in the object and converging the laser light at the etch resist film so as to form a defect region along a part corresponding to the through hole in the etch resist film; and an etching step of etching the object after the laser light converging step so as to advance the etching selectively along the modified region and form the through hole.
摘要翻译：一种激光加工方法，其将激光会聚到由硅制成的待加工物体中以形成改质区域并沿着改质区域蚀刻物体以形成具有通孔的物体，其包括：抗蚀剂膜制造步骤产生耐蚀刻物体的外表面上的蚀刻抗蚀剂膜; 激光聚光步骤，在激光刻蚀步骤之后将激光会聚在物体上，以沿与物体中的通孔对应的部分形成改质区域，并将激光会聚在抗蚀剂膜上，以便沿着与蚀刻抗蚀剂膜中的通孔对应的部分形成缺陷区域; 以及蚀刻步骤，在激光聚光步骤之后蚀刻所述物体，以便沿着所述改质区域选择性地进行蚀刻并形成所述通孔。

4. 发明公开

EP2599576A4 LASER PROCESSING METHOD 有权
标题翻译： LASERVERARBEITUNGSVERFAHREN
公开(公告)号：EP2599576A4
公开(公告)日：2016-12-14
申请号：EP11812301
申请日：2011-07-19
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , KYUSHIMA HIROYUKI , ARAKI KEISUKE
IPC分类号： H01L21/306 , B23K26/00 , B23K26/06 , B23K26/38 , B23K26/40
CPC分类号： H01L23/481 , B23K26/006 , B23K26/382 , B23K26/384 , B23K26/40 , B23K2203/50 , B81B2203/0353 , B81B2203/0384 , B81C1/00087 , B81C2201/0143 , H01L21/30608 , H01L21/76898 , H01L2924/0002 , H01L2924/00012 , H01L2924/00
摘要： A laser processing method for forming a hole in a sheet-like object to be processed made of silicon comprises a depression forming step of forming a depression in a part corresponding to the hole on a laser light entrance surface side of the object, the depression opening to the laser light entrance surface; a modified region forming step of forming a modified region along a part corresponding to the hole in the object by converging a laser light at the object after the depression forming step; and an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the modified region and form the hole in the object; wherein the modified region forming step exposes the modified region or a fracture extending from the modified region to an inner face of the depression.
摘要翻译：在由硅制成的待加工的片状物体中形成孔的激光加工方法包括凹陷形成步骤，在与物体的激光入射面侧的孔对应的部分形成凹部，凹部开口到激光入射面; 改变区域形成步骤，通过在所述凹陷形成步骤之后会聚所述物体上的激光，沿着与所述物体中的所述孔对应的部分形成改质区域; 以及在所述改质区域形成工序之后各向异性地蚀刻所述物体的蚀刻工序，以沿所述改质区域选择性地进行蚀刻，并在所述物体中形成所述孔; 其中所述改性区域形成步骤将所述改性区域或从所述改质区域延伸的断裂暴露于所述凹陷的内表面。

5. 发明公开

EP2557589A4 ELECTRON MULTIPLIER AND PHOTOMULTIPLIER TUBE CONTAINING SAME 有权
标题翻译：电子倍增器和辅助电子倍增器
公开(公告)号：EP2557589A4
公开(公告)日：2013-08-21
申请号：EP12780069
申请日：2012-05-28
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , KYUSHIMA HIROYUKI , INOUE KEISUKE
IPC分类号： H01J43/10 , H01J43/22
CPC分类号： H01J43/22

6. 发明公开

EP2003674A4 PHOTOMULTIPLIER AND RADIATION DETECTING APPARATUS 有权转让
标题翻译：光电倍增管和辐射检测仪
公开(公告)号：EP2003674A4
公开(公告)日：2012-09-19
申请号：EP07737965
申请日：2007-03-07
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , HARA KAZUHIRO , KYUSHIMA HIROYUKI
IPC分类号： H01J43/20 , G01T1/20
CPC分类号： H01J43/20

7. 发明公开

EP1276135A4 ELECTRON MULTIPLIER AND PHOTOMULTIPLIER 有权
标题翻译：电动恩维尔·费多个和光电倍增
公开(公告)号：EP1276135A4
公开(公告)日：2003-06-04
申请号：EP01917809
申请日：2001-04-03
申请人： HAMAMATSU PHOTONICS KK
发明人： KYUSHIMA HIROYUKI , ATSUMI AKIRA , SHIMOI HIDEKI
IPC分类号： H01J43/00 , H01J43/04 , H01J43/22 , H01J43/20
CPC分类号： H01J31/507 , H01J43/045 , H01J43/22
摘要： A dynode (8) constituting an electron multiplier or a photomultiplier is provided with eight rows of channels (15) each defined by an outer frame (16) and a partitioning part (17) of the dynode (8). In each channel (15), a plurality of electron multiplying holes (14) are arranged. In specified positions of the outer frame (16) and the partitioning part (17) of the dynode (8), glass receiving parts (21) wider than the outer frame (16) and the partitioning part (17) are provided integrally with the dynode (8). Glass parts (22) are bonded to all the glass receiving parts (21). The glass parts (22) are bonded by applying glass to the glass receiving parts (21) and hardening the glass and each have a generally dome-like convex shape. Each dynode (8) is formed after the dome-like glass part (22) is bonded to the glass receiving part (21).

8. 发明公开

EP2460634A4 METHOD FOR CUTTING OBJECT TO BE PROCESSED 有权
标题翻译： VERFAHREN ZUM SCHNEIDEN EINES ZU VERARBEITENDEN GEGENSTANDS
公开(公告)号：EP2460634A4
公开(公告)日：2017-09-27
申请号：EP10804302
申请日：2010-07-21
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , UCHIYAMA NAOKI , KAWAGUCHI DAISUKE
IPC分类号： B28D5/00 , B23K26/00 , B23K26/38 , B23K26/40 , H01L21/301
CPC分类号： B32B37/06 , B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50 , B28D5/00 , B28D5/0011 , B32B38/0004 , H01L21/78 , Y10T29/49002 , Y10T29/49787 , Y10T156/1052

9. 发明公开

EP2599579A4 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：法半导体部件
公开(公告)号：EP2599579A4
公开(公告)日：2016-12-21
申请号：EP11812309
申请日：2011-07-19
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , ARAKI KEISUKE
IPC分类号： H01L23/473 , B23K26/00 , B23K26/38
CPC分类号： B23K26/006 , B23K26/0006 , B23K26/0622 , B23K26/0853 , B23K2201/40 , B23K2203/56 , H01L23/473 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device having a cooling mechanism comprises a modified region forming step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object along a line to form a modified region, an etching step of anisotropically etching the object after the modified region forming step so as to advance the etching selectively along the first modified region and form a flow path for circulating a coolant as a cooling mechanism within the object, and a functional device forming step of forming a functional device on one main face side of the object.

10. 发明公开

EP1995761A4 PHOTOMULTIPLIER AND RADIATION DETECTING APPARATUS 有权
标题翻译：光电倍增管和辐射检测仪
公开(公告)号：EP1995761A4
公开(公告)日：2015-11-18
申请号：EP07737448
申请日：2007-02-27
申请人： HAMAMATSU PHOTONICS KK
发明人： SHIMOI HIDEKI , KYUSHIMA HIROYUKI
IPC分类号： H01J43/22 , G01T1/20 , H01J43/28
CPC分类号： H01J43/22 , H01J43/28
摘要： A vacuum vessel is configured by hermetically joining a faceplate (13) to one end of a side tube (15) and a stem (29) to the other end via a tubular member (31). A photocathode (14), a focusing electrode (17), dynodes (Dy1-Dy12), a drawing electrode (19), and anodes (25) are arranged within the vacuum vessel. The tubular member (31) is disposed on the periphery of the stem (29), and supporting pins (21) and lead pins (47) penetrate and are fixed to an extending section (32) that protrudes from the tubular member (31). The supporting pins (21) and the lead pins (47) are arranged in cutout portions (49, 24) of the dynodes (Dy1-Dy12) and the drawing electrode (19), thereby allowing effective areas of each electrode to be enlarged. Further, protuberant sections (33) are formed on the connecting sections of each pin with the stem (29), thereby facilitating thickness control of the stem.

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