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    • 3. 发明公开
    • Radiographic imaging device and radiographic imaging system using the same
    • RöntgenbildgebungsvorrichtungundRöntgenbildgebungssystemdamit
    • EP2317557A2
    • 2011-05-04
    • EP10188879.0
    • 2010-10-26
    • Fujifilm Corporation
    • Imai, Shinji
    • H01L27/146H01L27/30
    • H01L27/14665H01L27/14625H01L27/307H01L27/308H01L51/0058
    • This invention provides a radiographic imaging device, having: a scintilator layer which converts transmitted radiation incident with emission of radiation to an imaging target to light; a first organic photoelectric conversion layer which is continuous and converts a first light containing the maximum peak wavelength from the scintilator layer to a charge; an insulating substrate having a storage capacitor and a thin film transistor for reading the charge generating in the first organic photoelectric conversion layer for each image detection pixel; a second organic photoelectric conversion layer which converts a second light from the scintilator layer to a charge; and a radiation dose detection circuit for reading the charge generating in the second organic photoelectric conversion layer for each radiation dose detection pixel and a radiographic imaging system using the same.
    • 本发明提供了一种放射线照相成像装置,其具有:将透过辐射入射的透射辐射转换为成像靶的闪烁体层, 第一有机光电转换层,其连续并将包含最大峰值波长的第一光从闪烁器层转换成电荷; 具有存储电容器的绝缘基板和用于读取每个图像检测像素的第一有机光电转换层中的电荷产生的薄膜晶体管; 第二有机光电转换层,其将来自所述闪烁体层的第二光转换成电荷; 以及辐射剂量检测电路,用于读取用于每个辐射剂量检测像素的第二有机光电转换层中的电荷产生和使用其的射线照相成像系统。
    • 4. 发明公开
    • Thin film field effect transistor and display using the same
    • 薄膜场效应晶体管和使用相同的显示器
    • EP2061087A3
    • 2009-06-17
    • EP08019923.5
    • 2008-11-14
    • FUJIFILM Corporation
    • Imai, Shinji
    • H01L29/786
    • H01L29/78696H01L29/78693
    • A TFT is provided which includes on a substrate, at least a gate electrode, a gate insulating layer, an active layer containing an amorphous oxide semiconductor, a source electrode, and a drain electrode, wherein a mean square interface roughness between the gate insulating layer and the active layer is less than 2 nm, a carrier concentration of the active layer is 1 × 10 15 cm -3 or more, and a film thickness of the active layer is 0.5 nm or more and less than 20 nm. A TFT is provided which has high field effect mobility and a high ON-OFF ratio, and is improved in environmental temperature dependency. Also, a display using the TFT is provided.
    • 提供了一种TFT,其在衬底上包括至少栅电极,栅绝缘层,包含非晶氧化物半导体的活性层,源电极和漏电极,其中栅绝缘层 并且有源层小于2nm,有源层的载流子浓度为1×1015cm-3以上,并且有源层的膜厚度为0.5nm以上且小于20nm。 提供具有高场效应迁移率和高开关比的TFT,并且改善了环境温度依赖性。 而且,提供了使用TFT的显示器。