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    • 10. 发明公开
    • ORGANIC THIN-FILM SOLAR CELL AND ORGANIC THIN-FILM SOLAR CELL MANUFACTURING METHOD
    • ORGANISCHEDÜNNSCHICHTSOLARZELLEUND HERSTELLUNGSVERFAHRENFÜRDIE ORGANISCHEDÜNNSCHICHTSOLARZELLE
    • EP3016157A4
    • 2017-03-29
    • EP14816636
    • 2014-06-27
    • OJI HOLDINGS CORP
    • SHINOTSUKA KEIOKAMOTO TAKAYUKI
    • H01L51/44C03C15/00
    • H01L51/447H01L51/0017H01L51/5268H01L2251/105Y02E10/549Y02P70/521
    • Provided is an organic thin-film solar cell, including: a substrate, an anode, an organic thin-film layer that includes an organic semiconductor layer, and a cathode. The anode, the organic thin-film layer that includes the organic semiconductor layer, and the cathode are layered in order on top of the substrate. A recess and protrusion-shaped microstructure that includes a plurality of recesses or protrusions arranged two-dimensionally at random is formed in an interface between the organic thin-film layer and the cathode. The recess and protrusion-shaped microstructure is formed such that, when » 1 and » 2 are a shorter wavelength and a longer wavelength, respectively, of wavelengths that produce an absorption edge in a light absorption spectrum of the organic semiconductor layer, and k 1 and k 2 are real parts of propagation constants of surface plasmons that correspond, respectively, to those wavelengths and occur along an interface between the organic semiconductor layer and the cathode, and when the real part k 1 corresponds to an upper wavenumber limit K 1 in a power spectrum of a height distribution of the microstructure formed in the interface between the cathode and the organic semiconductor layer, and the real part k 2 corresponds to a lower wavenumber limit K 2 in the power spectrum of the height distribution of the microstructure formed in the interface between the cathode and the organic semiconductor layer, the power spectrum of the height distribution of the microstructure exhibits determinate values between the upper wavenumber limit K 1 and the lower wavenumber limit K 2 , and an integrated value of a spectral intensity of the power spectrum of the height distribution over a wavenumber range from K 1 to K 2 is equal to at least 50% of an integrated value of the spectral intensity of the power spectrum of the height distribution across all wavenumbers.
    • 提供一种有机薄膜太阳能电池,包括:基板,阳极,包括有机半导体层的有机薄膜层和阴极。 阳极,包括有机半导体层的有机薄膜层和阴极依次层叠在基板的顶部。 在有机薄膜层和阴极之间的界面形成包括随机二维排列的多个凹部或凸部的凹凸状的微细结构体。 形成凹部和突出形状的微结构,使得当分别在有机半导体层的光吸收光谱中产生吸收边缘的波长的λ1和λ2分别为较短波长和较长波长时,k 1 而k 2是分别对应于那些波长并沿着有机半导体层和阴极之间的界面发生的表面等离激元的传播常数的实部,并且当实部k 1对应于上部波数极限K 1时 形成在阴极和有机半导体层之间的界面中的微结构的高度分布的功率谱,并且实部k 2对应于在形成于其中的微结构的高度分布的功率谱中的较低波数极限K 2 阴极和有机半导体层之间的界面,显微组织的高度分布的功率谱显示出阻碍 上限值K 1和较低波数极限K 2之间的最小值,以及从K 1到K 2的波数范围内的高度分布的功率谱的光谱强度的积分值等于至少50% 所有波数的高度分布的功率谱的光谱强度的综合值。