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    • 8. 发明公开
    • ULTRASONIC OSCILLATOR AND ULTRASONIC DIAGNOSIS DEVICE
    • 超声波振荡器和超声波诊断装置
    • EP2595412A1
    • 2013-05-22
    • EP11861763.8
    • 2011-11-21
    • Olympus Medical Systems Corp.Olympus Corporation
    • MATSUMOTO, KazuyaWAKABAYASHI, KatsuhiroHIRAOKA, JinKARAKI, KazuhisaHASEGAWA, MamoruYOSHIDA, Satoshi
    • H04R19/00A61B8/12
    • A61B8/12A61B8/445A61B8/4494B06B1/0292
    • An ultrasound transducer includes a substrate and a lower electrode layer, a lower insulating layer, an upper insulating layer, and an upper electrode layer laminated in order on the substrate. The lower insulating layer and the upper insulating layer are arranged to be opposed to each other via an air gap section. The upper insulating layer and the lower insulating layer are different in a material and thickness and satisfy Equation 1 below. In Equation 1, K1 represents a relative dielectric constant of the lower insulating layer, K2 represents a relative dielectric constant of the upper insulating layer, T1 represents layer thickness of the lower insulating layer, T2 represents layer thickness of the upper insulating layer, ρ1(x) represents a charge density distribution in the lower insulating layer (x represents a distance from the lower electrode layer), and ρ2(y) represents a charge density distribution in the upper insulating layer (y represents a distance from the upper electrode layer).
    • 超声波换能器包括基板和在基板上依次层压的下电极层,下绝缘层,上绝缘层和上电极层。 下绝缘层和上绝缘层被布置为经由气隙部分彼此相对。 上绝缘层和下绝缘层的材料和厚度不同并且满足下面的等式1。 在等式1中,K1表示下绝缘层的相对介电常数,K2表示上绝缘层的相对介电常数,T1表示下绝缘层的层厚度,T2表示上绝缘层的层厚度,ρ1( x)表示下绝缘层中的电荷密度分布(x表示距下电极层的距离),ρ2(y)表示上绝缘层中的电荷密度分布(y表示距上电极层的距离) 。
    • 9. 发明授权
    • ULTRASONIC ELEMENT, AND ULTRASONIC ENDOSCOPE
    • 超声波元件和超声内窥镜
    • EP2733960B1
    • 2017-08-23
    • EP12811284.4
    • 2012-05-29
    • Olympus Corporation
    • MATSUMOTO, KazuyaKARAKI, KazuhisaHASEGAWA, MamoruWAKABAYASHI, Katsuhiro
    • H04R19/00A61B8/12F04B43/04B06B1/02
    • A61B8/4483A61B8/12A61B8/445B06B1/0292B06B2201/76H02N1/002H02N1/08
    • A US element 20 includes a silicon substrate 11, wherein a lower electrode layer 12 that has a plurality of lower electrode sections 12A, and a plurality of lower wiring sections 12B, and is connected to a lower electrode terminal 52 to which a drive signal and a bias signal are applied, a lower insulating layer 13, an upper insulating layer 15 in which a plurality of cavities 14 are formed, an upper electrode layer 16 that has a plurality of upper electrode sections 16A and a plurality of upper wiring sections 16B, and is connected to an upper electrode terminal 51 at a ground potential for detecting a capacitance signal, and a protection layer 17 are sequentially stacked on the silicon substrate 11, and the US element 20 further includes a shield electrode section 71 that is formed at least at an upper side of the lower wiring sections 12B, and is connected to a shield electrode terminal 53 at a ground potential.
    • US元件20包括硅衬底11,其中具有多个下电极部分12A的下电极层12和多个下布线部分12B,并且连接到下电极端子52,驱动信号和 施加偏置信号,下绝缘层13,其中形成有多个空腔14的上绝缘层15,具有多个上电极部分16A和多个上布线部分16B的上电极层16, 并且与用于检测电容信号的地电位的上电极端子51连接,并且保护层17顺序地堆叠在硅基板11上,并且US元件20还包括屏蔽电极部71,该屏蔽电极部71至少形成 在下布线部分12B的上侧处,并且以接地电位连接到屏蔽电极端子53。