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1. 发明公开

EP2612348A1 P-DOTIERTE SILICIUMSCHICHTEN 失效转让
标题翻译： VERFAHREN ZUR HERSTELLUNG P-DOTIERTER SILICIUMSCHICHTEN
公开(公告)号：EP2612348A1
公开(公告)日：2013-07-10
申请号：EP11757199.2
申请日：2011-08-19
申请人： Evonik Degussa GmbH
发明人： WIEBER, Stephan , PATZ, Matthias , STÜGER, Harald , LEHMKUHL, Jasmin
IPC分类号： H01L21/228 , H01L21/02 , C07F9/50 , H01L31/18 , C23C18/12
CPC分类号： H01L21/02381 , C23C18/1204 , C23C18/122 , C23C18/1225 , C23C18/14 , H01L21/0237 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628 , H01L21/228 , H01L29/16 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for producing p-doped silicon layers, in particular silicon layers which are produced from liquid silane-containing formulations. The invention also relates to a substrate coated with a p-doped silicon layer. The invention further relates to the use of certain dopants based on boron compounds for p-doping a silicon layer.
摘要翻译：本发明涉及一种用于生产p掺杂硅层的方法，特别是由含有液态硅烷的制剂制备的那些硅层。本发明还涉及涂覆有p掺杂硅层的衬底。本发明另外涉及基于硼化合物的特定掺杂剂用于硅层的p掺杂的用途。

2. 发明授权

EP2612348B1 VERFAHREN ZUR HERSTELLUNG P-DOTIERTER SILICIUMSCHICHTEN 失效转让
标题翻译：生产掺杂P的硅树脂层的方法
公开(公告)号：EP2612348B1
公开(公告)日：2017-11-29
申请号：EP11757199.2
申请日：2011-08-19
申请人： Evonik Degussa GmbH
发明人： WIEBER, Stephan , PATZ, Matthias , STÜGER, Harald , LEHMKUHL, Jasmin
IPC分类号： H01L21/228 , H01L21/02 , C07F9/50 , H01L31/18 , C23C18/12
CPC分类号： H01L21/02381 , C23C18/1204 , C23C18/122 , C23C18/1225 , C23C18/14 , H01L21/0237 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628 , H01L21/228 , H01L29/16 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521

3. 发明公开

EP3221901A1 VERFAHREN ZUR ERZEUGUNG VON DOTIERTEN, POLYKRISTALLINEN HALBLEITERSCHICHTEN 审中-公开
标题翻译： VERFAHREN ZUR ERZEUGUNG VON DOTIERTEN，POLYKRISTALLINEN HALBLEITERSCHICHTEN
公开(公告)号：EP3221901A1
公开(公告)日：2017-09-27
申请号：EP15794943.9
申请日：2015-11-17
申请人： Evonik Degussa GmbH
发明人： MADER, Christoph , WUNNICKE, Odo , MARTENS, Susanne , LEHMKUHL, Jasmin , GUENTHER, Christian
IPC分类号： H01L31/068 , H01L21/02 , H01L31/18
CPC分类号： H01L31/182 , B05D1/005 , B05D3/0254 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02628 , H01L31/0288 , H01L31/03682 , H01L31/068 , H01L31/0745 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for generating highly doped polycrystalline semiconductor layers on a semiconductor substrate. A first Si precursor composition containing at least one first dopant is applied onto one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition containing at least one second dopant is applied onto one or more additional regions of the surface of the semiconductor substrate, wherein the first dopant is an n-type dopant, and the second dopant is a p-type dopant or vice versa; and each of the coated regions of the surface of the semiconductor substrate is converted such that polycrystalline silicon is produced from the Si precursor. The invention further relates to the semiconductors which can be obtained according to the method and to the use thereof, in particular in the production of solar cells.
摘要翻译：本发明涉及一种用于在半导体衬底上产生高度掺杂的多晶半导体层的方法。将包含至少一种第一掺杂剂的第一硅前体组合物施加到半导体衬底表面的一个或多个区域上; 任选地将包含至少一种第二掺杂剂的第二Si前体组合物施加到半导体衬底表面的一个或多个附加区域上，其中第一掺杂剂是n型掺杂剂，第二掺杂剂是p型掺杂剂或反之亦然; 并且半导体衬底的表面的每个涂覆区域被转换，使得由Si前体产生多晶硅。本发明进一步涉及可以根据该方法及其用途，特别是在太阳能电池的生产中获得的半导体。

4. 发明公开

EP3138119A1 VERFAHREN ZUR ERZEUGUNG UNTERSCHIEDLICH DOTIERTER HALBLEITER 审中-公开
公开(公告)号：EP3138119A1
公开(公告)日：2017-03-08
申请号：EP15715773.6
申请日：2015-04-17
申请人： Evonik Degussa GmbH
发明人： MADER, Christoph , GÜNTHER, Christian , ERZ, Joachim , MARTENS, Susanne , LEHMKUHL, Jasmin , TRAUT, Stephan , WUNNICKE, Odo
IPC分类号： H01L21/228 , H01L31/18 , H01L21/22
CPC分类号： H01L31/1804 , H01L21/2225 , H01L21/228 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a liquid-phase process for doping a semiconductor substrate, characterized in that a first composition containing at least a first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to produce one or more regions of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least a second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to produce one or more regions of the surface of the semiconductor substrate coated with the second composition, wherein the one or more regions that is/are coated with the first composition and the one or more regions that is/are coated with the second composition are different and do not significantly overlap and wherein the first dopant is a dopant of the n type and the second dopant is a dopant of the p type, or vice versa; the regions of the surface of the semiconductor substrate that are coated with the first composition and those that are coated with the second composition are in each case activated completely or partially; optionally, the non-activated regions of the surface of the semiconductor substrate that are coated with the first composition and those that are coated with the second composition are respectively oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention also relates to the semiconductors that can be obtained by the process and to the use thereof, in particular in the production of solar cells.
摘要翻译：本发明涉及一种用于掺杂半导体衬底的液相方法，其特征在于，将包含至少一种第一掺杂剂的第一组合物施加到半导体衬底的表面的一个或多个区域，以便产生一个或多个涂覆有第一组合物的半导体衬底的表面的区域; 将包含至少一种第二掺杂剂的第二组合物施加到半导体衬底的表面的一个或多个区域，以便产生涂覆有第二组合物的半导体衬底的表面的一个或多个区域，其中涂覆有第一组合物的一个或多个区域和涂覆有第二组合物的一个或多个区域是不同的，并且不显着重叠，并且其中第一掺杂剂是n型掺杂剂，并且第二掺杂剂是 p型掺杂剂或反之亦然; 涂覆有第一组合物和第二组合物的半导体衬底的表面的区域各自被全部或部分活化; 任选地，涂覆有第一组合物和第二组合物的半导体衬底的表面的未活化区域都被氧化; 并且将半导体衬底加热到掺杂剂从涂层扩散到半导体衬底内的温度。本发明还涉及通过该方法获得的半导体及其用途，特别是在太阳能电池的制造中。

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