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1. 发明公开

EP3138119A1 VERFAHREN ZUR ERZEUGUNG UNTERSCHIEDLICH DOTIERTER HALBLEITER 审中-公开
公开(公告)号：EP3138119A1
公开(公告)日：2017-03-08
申请号：EP15715773.6
申请日：2015-04-17
申请人： Evonik Degussa GmbH
发明人： MADER, Christoph , GÜNTHER, Christian , ERZ, Joachim , MARTENS, Susanne , LEHMKUHL, Jasmin , TRAUT, Stephan , WUNNICKE, Odo
IPC分类号： H01L21/228 , H01L31/18 , H01L21/22
CPC分类号： H01L31/1804 , H01L21/2225 , H01L21/228 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： The present invention relates to a liquid-phase process for doping a semiconductor substrate, characterized in that a first composition containing at least a first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to produce one or more regions of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least a second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to produce one or more regions of the surface of the semiconductor substrate coated with the second composition, wherein the one or more regions that is/are coated with the first composition and the one or more regions that is/are coated with the second composition are different and do not significantly overlap and wherein the first dopant is a dopant of the n type and the second dopant is a dopant of the p type, or vice versa; the regions of the surface of the semiconductor substrate that are coated with the first composition and those that are coated with the second composition are in each case activated completely or partially; optionally, the non-activated regions of the surface of the semiconductor substrate that are coated with the first composition and those that are coated with the second composition are respectively oxidized; and the semiconductor substrate is heated to a temperature at which the dopants diffuse out of the coating into the semiconductor substrate. The invention also relates to the semiconductors that can be obtained by the process and to the use thereof, in particular in the production of solar cells.
摘要翻译：本发明涉及一种用于掺杂半导体衬底的液相方法，其特征在于，将包含至少一种第一掺杂剂的第一组合物施加到半导体衬底的表面的一个或多个区域，以便产生一个或多个涂覆有第一组合物的半导体衬底的表面的区域; 将包含至少一种第二掺杂剂的第二组合物施加到半导体衬底的表面的一个或多个区域，以便产生涂覆有第二组合物的半导体衬底的表面的一个或多个区域，其中涂覆有第一组合物的一个或多个区域和涂覆有第二组合物的一个或多个区域是不同的，并且不显着重叠，并且其中第一掺杂剂是n型掺杂剂，并且第二掺杂剂是 p型掺杂剂或反之亦然; 涂覆有第一组合物和第二组合物的半导体衬底的表面的区域各自被全部或部分活化; 任选地，涂覆有第一组合物和第二组合物的半导体衬底的表面的未活化区域都被氧化; 并且将半导体衬底加热到掺杂剂从涂层扩散到半导体衬底内的温度。本发明还涉及通过该方法获得的半导体及其用途，特别是在太阳能电池的制造中。

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