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1. 发明授权

EP1866968B1 WIDE BANDGAP TRANSISTORS WITH GATE-SOURCE FIELD PLATES 有权转让
公开(公告)号：EP1866968B1
公开(公告)日：2020-05-13
申请号：EP06718166.9
申请日：2006-01-11
申请人： Cree, Inc.
发明人： WU, Yifeng , PARIKH, Primit , MISHRA, Umesh , SHEPPARD, Scott
IPC分类号： H01L29/778 , H01L29/40 , H01L29/812 , H01L29/06 , H01L29/24 , H01L29/20

2. 发明授权

EP1763900B1 METHOD FOR FABRICATING GROUP III NITRIDE DEVICES 有权转让
标题翻译：用于生产III族氮化物器件
公开(公告)号：EP1763900B1
公开(公告)日：2015-06-24
申请号：EP05751127.1
申请日：2005-05-17
申请人： Cree, Inc.
发明人： NAKAMURA, Shuji , DENBAARS, Steven , EDMOND, John , MISHRA, Umesh , SWOBODA, Charles
IPC分类号： H01L33/10 , H01L33/14 , H01L33/32 , H01L33/38 , H01L33/46 , H01L33/00
CPC分类号： H01L33/465 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/32 , H01L33/38 , H01L2933/0016

3. 发明授权

EP1999794B1 HIGH EFFICIENCY AND/OR HIGH POWER DENSITY WIDE BANDGAP TRANSISTORS 有权
标题翻译：宽带隙和高功率密度TRANSISTORS
公开(公告)号：EP1999794B1
公开(公告)日：2014-03-05
申请号：EP07752361.1
申请日：2007-03-05
申请人： Cree, Inc.
发明人： WU, Yifeng , PARIKH, Primit , MISHRA, Umesh , MOORE, Marcia
IPC分类号： H01L29/778 , H01L29/40
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/404 , H01L29/42316

4. 发明授权

EP1390983B1 GROUP-III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH BARRIER/SPACER LAYER 有权
标题翻译：具有阻挡层/间隔层的基于III族氮化物的高电子迁移率晶体管（HEMT）
公开(公告)号：EP1390983B1
公开(公告)日：2013-08-14
申请号：EP02769655.8
申请日：2002-04-11
申请人： CREE, INC. , The Regents of The University of California
发明人： SMORCHKOVA, Ioulia, P. , WALUKIEWICZ, Wladyslaw , CHAVARKAR, Prashant , WU, Yifeng , KELLER, Stacia , MISHRA, Umesh
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003

5. 发明公开

EP1390983A1 GROUP-III NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) WITH BARRIER/SPACER LAYER 有权
标题翻译：具有阻挡层/间隔层的基于III族氮化物的高电子迁移率晶体管（HEMT）
公开(公告)号：EP1390983A1
公开(公告)日：2004-02-25
申请号：EP02769655.8
申请日：2002-04-11
申请人： Cree, Inc. , The Regent of the University of California
发明人： SMORCHKOVA, Ioulia, P. , WALUKIEWICZ, Wladyslaw , CHAVARKAR, Prashant , WU, Yifeng , KELLER, Stacia , MISHRA, Umesh
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A group III nitride based high electron mobility transistor (HEMT) (10) is disclosed that provides improved high frequency performance. One embodiment of the HEMT (10) comprises a GaN buffer layer (26), with an AlyGa1-yN (y=1 or y 1) layer (28) on the Gan buffer layer (26). An AlxGa1-xN (0≤x≤0.5) barrier layer (30) is on the AlyGa1-yN layer (28), opposite the GaN buffer layer (26), the AlyGa1-yN layer (28) having a higher Al concentration than that of the AlxGa1-xN barrirer layer (30). A preferred AlyGa1-yN layer (28) has y=1 or y≃1 and a preferred AlxGa1-xN barrier layer (30) has 0≤0.5. A 2DEG (38) forms at the interface between the GaN buffer layer (26) and the AlyGa1-yN layer (28). Respective source, drain and gate contacts (32, 34, 36) are formed on the AlxGa1-xN barrier layer (30). The HEMT (10) can also include a substrate (22) adjacent to the buffer layer (26), opposite the AlyGa1-yN layer (28) and a nucleation layer (24) can be included between the GaN buffer layer (26) and the substrate (22).
摘要翻译：公开了III族氮化物基高电子迁移率晶体管（HEMT）（10），其提供改进的高频性能。 HEMT（10）的一个实施例包括GaN缓冲层（26），在Gan缓冲层（26）上具有AlyGa1-yN（y = 1或y1）层（28）。 Al x Ga 1-x N（0≤x≤0.5）阻挡层（30）位于与GaN缓冲层（26）相对的Al y Ga 1-y N层（28）上，Al y Ga 1-y N层 AlxGa1-xN分枝层（30）的结构。优选的AlyGa1-yN层（28）具有y = 1或y≥1，优选的Al x Ga 1-x N势垒层（30）具有0≤0.5。 2DEG（38）在GaN缓冲层（26）与AlyGa1-yN层（28）之间的界面处形成。在Al x Ga 1-x N势垒层（30）上形成各自的源极，漏极和栅极接触（32,34,36）。 HEMT（10）还可以包括与AlyGa1-yN层（28）相对的与缓冲层（26）相邻的衬底（22），并且成核层（24）可以包括在GaN缓冲层（26）和衬底（22）。

6. 发明授权

EP1410445B1 GALLIUM NITRIDE BASED DIODES WITH LOW FORWARD VOLTAGE AND LOW REVERSE CURRENT OPERATION 有权
标题翻译：二极管的氮化镓以经营AT低正向电压和低反向功率
公开(公告)号：EP1410445B1
公开(公告)日：2011-07-06
申请号：EP02798906.0
申请日：2002-07-08
申请人： CREE, INC.
发明人： PARIKH, Primit , MISHRA, Umesh
IPC分类号： H01L29/872 , H01L29/88
CPC分类号： H01L29/475 , H01L29/2003 , H01L29/872 , H01L29/88
摘要： New Group III based diodes are disclosed having a low on state voltage (Vf) and structures to keep reverse current (Irev) relatively low. One embodiment of the invention is Schottky barrier diode (10) made from the GaN material system in which the Fermi level (or surface potential) of is not pinned. The barrier potential (33) at the metal-to-semiconductor junction varies depending on the type of metal (16) used and using particular metals lowers the diode's Schottky barrier potential (33) and results in a Vf in the range of 0.1-0.3V. In another embodiment (40) a trench structure (45) is formed on the Schottky diodes semiconductor material (44) to reduce reverse leakage current and comprises a number of parallel, equally spaced trenches (46) with mesa regions (49) between adjacent trenches (46). A third embodiment of the invention provides a GaN tunnel diode with a low Vf resulting from the tunneling of electrons through the barrier potential (81), instead of over it. An embodiment of the tunnel diode (120) can also have a trench structure (121) to reduce reverse leakage current.

7. 发明公开

EP1751804A2 WIDE BANDGAP TRANSISTORS WITH MULTIPLE FIELD PLATES 有权
标题翻译：对于有多个场板BIG BAND距离TRANSISTORS
公开(公告)号：EP1751804A2
公开(公告)日：2007-02-14
申请号：EP05735109.0
申请日：2005-04-14
申请人： CREE, INC.
发明人： WU, Yifeng , PARIKH, Primit , MISHRA, Umesh , MOORE, Marcia
IPC分类号： H01L29/778 , H01L29/06
摘要： A transistor (10) comprises an active region (18) having a channel and source (20) and drain (22) electrodes in contact with the active region. A gate (24, 124,142) is between the source and drain electrodes and on the active region. A plurality of field plates (30,42) is arranged on the active region, each extending toward the drain electrode, and each of which is isolated from the active region and from the others of the field plates. The topmost (42) of the field plates electrically is connected to the source electrode.

8. 发明授权

EP1751804B1 WIDE BANDGAP TRANSISTORS WITH MULTIPLE FIELD PLATES 有权
公开(公告)号：EP1751804B1
公开(公告)日：2020-11-18
申请号：EP05735109.0
申请日：2005-04-14
申请人： Cree, Inc.
发明人： WU, Yifeng , PARIKH, Primit , MISHRA, Umesh , MOORE, Marcia
IPC分类号： H01L29/778 , H01L29/812 , H01L29/40 , H01L29/06 , H01L29/16 , H01L29/20

9. 发明授权

EP1754263B1 WIDE BANDGAP FIELD EFFECT TRANSISTORS WITH SOURCE CONNECTED FIELD PLATES 有权
公开(公告)号：EP1754263B1
公开(公告)日：2019-01-16
申请号：EP05756258.9
申请日：2005-04-21
申请人： Cree, Inc.
发明人： WU, Yifeng , PARIKH, Primit , MISHRA, Umesh , MOORE, Marcia
IPC分类号： H01L29/812 , H01L29/417 , H01L29/40

10. 发明授权

EP1410444B1 Insulating Gate AlGaN/GaN HEMT 有权
标题翻译：绝缘栅AlGaN / GaN HEMT
公开(公告)号：EP1410444B1
公开(公告)日：2012-08-22
申请号：EP02792174.1
申请日：2002-07-23
申请人： CREE, INC.
发明人： PARIKH, Primit , MISHRA, Umesh , WU, Yifeng
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7787 , H01L23/291 , H01L23/3171 , H01L29/2003 , H01L29/432 , H01L29/518 , H01L2924/0002 , H01L2924/00
摘要： AlGaN/GaN HEMTs are disclosed having a thin AlGaN layer to reduce trapping and also having additional layers to reduce gate leakage and increase the maximum drive current. One HEMT according to the present invention comprises a high resistivity semiconductor layer (20) with a barrier semiconductor layer (18) on it. The barrier layer (18) has a wider bandgap than the high resistivity layer (20) and a 2DEG (22) forms between the layers. Source and drain contacts (13,14) contact the barrier layer (18), with part of the surface of the barrier layer (18) uncovered by the contacts (13,14). An insulating layer (24) is included on the uncovered surface of the barrier layer (18) and a gate contact (16) is included on the insulating layer (24). The insulating layer (24) forms a barrier to gate leakage current and also helps to increase the HEMT's maximum current drive. The invention also includes methods for fabricating HEMTs according to the present invention. In one method, the HEMT and its insulating layer are fabricated using metal-organic chemical vapor deposition (MOCVD). In another method the insulating layer is sputtered onto the top surface of the HEMT in a sputtering chamber.
摘要翻译：公开了具有薄AlGaN层的AlGaN / GaN HEMT以减少俘获并且还具有附加层以减少栅极泄漏并增加最大驱动电流。根据本发明的一个HEMT包括其上具有阻挡半导体层（18）的高电阻率半导体层（20）。阻挡层（18）具有比高电阻率层（20）更宽的带隙，并且在层之间形成2DEG（22）。源极和漏极触点（13,14）接触势垒层（18），势垒层（18）的一部分表面未被触点（13,14）覆盖。在阻挡层（18）的未覆盖表面上包括绝缘层（24），并且在绝缘层（24）上包括栅极触点（16）。绝缘层（24）形成栅极泄漏电流的屏障，并且还有助于增加HEMT的最大电流驱动。本发明还包括用于制造根据本发明的HEMT的方法。在一种方法中，HEMT及其绝缘层使用金属有机化学气相沉积（MOCVD）制造。在另一种方法中，绝缘层在溅射室中溅射到HEMT的顶面上。

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