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1. 发明授权

EP0240306B1 Method for forming deposited film 失效
标题翻译：形成沉积膜的方法
公开(公告)号：EP0240306B1
公开(公告)日：1993-09-29
申请号：EP87302782.5
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyama, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： C23C16/24 , H01L21/205
CPC分类号： C23C16/24 , C23C16/452 , H01L21/0237 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02532 , H01L21/0262

2. 发明公开

EP0240305A3 Method for forming a deposited film 失效
标题翻译：形成沉积膜的方法
公开(公告)号：EP0240305A3
公开(公告)日：1988-12-07
申请号：EP87302781
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyama, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： H01L21/205 , C23C16/24
CPC分类号： C30B25/18 , C23C16/04 , C23C16/24 , C23C16/452 , H01L21/02381 , H01L21/02422 , H01L21/02433 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).

3. 发明公开

EP0240309A2 Method for forming crystal and crystal article obtained by said method 失效
标题翻译： Herstellungsverfahren eines Kristalls und so hergestellter Kristall。
公开(公告)号：EP0240309A2
公开(公告)日：1987-10-07
申请号：EP87302788.2
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyam, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： H01L21/20 , C30B25/04 , C30B23/04
CPC分类号： C23C16/04 , C23C16/24 , C23C16/44 , C30B25/18 , F04C2240/603 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), thereby growing a single crystal from said single nucleus.
摘要翻译：一种形成晶体的方法包括在具有小成核密度的非成核表面（SNDS）的自由表面的基底上形成晶体形成处理，以及从具有足够小面积的非球化表面露出的晶体的成核面（SNDL）仅从单个核生长并且具有比所述非成核表面（SNDS）的成核密度（NDS）更大的成核密度（NDL），从而从所述单核生长单晶。

4. 发明授权

EP0241204B1 Method for forming crystalline deposited film 失效
标题翻译：沉淀的晶体层的制造方法
公开(公告)号：EP0241204B1
公开(公告)日：1996-08-28
申请号：EP87302786.6
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyama, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： H01L21/20 , H01L21/205 , C30B25/04
CPC分类号： H01L21/02381 , C23C16/04 , C23C16/24 , C23C16/44 , C30B25/18 , H01L21/0237 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647

5. 发明授权

EP0240309B1 Method for forming crystal and crystal article obtained by said method 失效
标题翻译：晶体的制造方法和由此产生的晶体
公开(公告)号：EP0240309B1
公开(公告)日：1996-08-28
申请号：EP87302788.2
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyam, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： H01L21/20 , C30B25/04 , C30B23/04
CPC分类号： C23C16/04 , C23C16/24 , C23C16/44 , C30B25/18 , F04C2240/603 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647

6. 发明授权

EP0240305B1 Method for forming a deposited film 失效
标题翻译：形成沉积膜的方法
公开(公告)号：EP0240305B1
公开(公告)日：1993-01-20
申请号：EP87302781.7
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyama, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： H01L21/205 , C23C16/24
CPC分类号： C30B25/18 , C23C16/04 , C23C16/24 , C23C16/452 , H01L21/02381 , H01L21/02422 , H01L21/02433 , H01L21/0245 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647

7. 发明公开

EP0241204A2 Method for forming crystalline deposited film 失效
标题翻译： Herstellungsverfahren einer niedergeschlagenen Kristallschicht。
公开(公告)号：EP0241204A2
公开(公告)日：1987-10-14
申请号：EP87302786.6
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyama, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： H01L21/20 , H01L21/205 , C30B25/04
CPC分类号： H01L21/02381 , C23C16/04 , C23C16/24 , C23C16/44 , C30B25/18 , H01L21/0237 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming a crystalline deposited film comprises introducing a gaseous starting material for formation of deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a free surface with a non-nucleation surface (S NDS ) with smaller nucleation density and a nucleation surface (S NDL ) having sufficiently small area for crystal growth from only a single nucleus and having greater nucleation density (ND L ) than the nucleation density (ND s ) of said non-nucleation surface (S NDS ) being arranged adjacent thereto is previously arranged, thereby effecting contact between said materials to form a plurality of precursors containing precursors under excited state, forming a single crystal on said nucleation surface (S NDL ) with at least one precursor of these precursors being as the source for feeding the constituent element of the deposited film and permitting a single crystal to grow from said nucleus.
摘要翻译：用于形成结晶沉积膜的方法包括将用于形成沉积膜的气态原料和具有氧化作用的气态卤素氧化剂引入到成膜空间中，其中具有自由表面的基材具有具有较小成核密度的非成核表面（SNDS）和具有足够小面积的成核表面（SNDL），仅从单个晶核生长并具有比所述非成核的成核密度（NDS）更大的成核密度（NDL）预先布置与其相邻布置的表面（SNDS），从而实现所述材料之间的接触以形成在激发态下含有前体的多种前体，在所述成核表面（SNDL）上形成单晶，其中这些前体的至少一种前体是作为供给沉积膜的构成元素并允许单晶的源从细胞核生长。

8. 发明授权

EP0240314B1 Method for forming deposited film 失效
标题翻译：形成沉积膜的方法
公开(公告)号：EP0240314B1
公开(公告)日：1993-08-18
申请号：EP87302793.2
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyam, Jinso , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： C23C16/44 , C23C16/24 , C23C16/42 , H01L21/00
CPC分类号： H01L21/02422 , C23C16/24 , C23C16/452 , H01L21/02381 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/0262

9. 发明公开

EP0240309A3 Method for forming crystal and crystal article obtained by said method 失效
标题翻译：用于形成由方法获得的晶体和晶体物品的方法
公开(公告)号：EP0240309A3
公开(公告)日：1988-10-05
申请号：EP87302788
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyam, Jinsho , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： H01L21/20 , C30B25/04 , C30B23/04
CPC分类号： C23C16/04 , C23C16/24 , C23C16/44 , C30B25/18 , F04C2240/603 , H01L21/0237 , H01L21/02381 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A method for forming a crystal comprises applying a crystal forming treatment on a substrate having a free surface comprising a nonnucleation surface (S NDS ) with small nucleation density and a nucleation surface (S NDL ) exposed from said nonnucleation surface having a sufficiently small area for a crystal growing only from a single nucleus and having a greater nucleation density (ND L ) than the nucleation density (ND S ) of said nonnucleation surface (S NDS ), thereby growing a single crystal from said single nucleus.

10. 发明公开

EP0240314A1 Method for forming deposited film 失效
标题翻译：形成沉积膜的方法
公开(公告)号：EP0240314A1
公开(公告)日：1987-10-07
申请号：EP87302793.2
申请日：1987-03-31
申请人： CANON KABUSHIKI KAISHA
发明人： Matsuyam, Jinso , Hirai, Yutaka , Ueki, Masao , Sakai, Akira
IPC分类号： C23C16/44 , C23C16/24 , C23C16/42 , H01L21/00
CPC分类号： H01L21/02422 , C23C16/24 , C23C16/452 , H01L21/02381 , H01L21/02425 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for forming deposited film, which comprises effecting a step [A] and another step [B] at least one time, the step [A] being the introduction of a starting material (A) which is either one of a gaseous starting material (1) for formation of a deposited film and a gaseous halogenic oxidizing agent (II) having the property of oxidative action on said starting material into a film forming space in which a substrate of which at least the surface to be filmed thereon has crystal orientability is previously arranged to have said starting material absorbed onto the surface of said substrate to form an adsorbed layer (I) and the step [B] being the introduction of the other starting material (B) into said film forming space, thereby causing the surface reaction on said absorption layer (I) to occur and form a deposited film.
摘要翻译：一种形成沉积膜的方法，该方法包括至少进行一次步骤[A]和另一步骤[B]，步骤[A]是引入原料（A），该原料是气态原料（1），用于在所述起始材料上形成沉积膜和具有氧化作用性质的气态卤素氧化剂（II），形成一个膜形成空间，在该膜形成空间中至少其上要被成膜的表面具有晶体取向性预先将所述原料吸附到所述基材的表面上以形成吸附层（I），步骤[B]是将另一种原料（B）引入所述膜形成空间，从而使所述表面在所述吸收层（I）上发生反应并形成沉积膜。

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