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1. 发明公开

EP3688810A1 ORGANIC LIGHT EMITTING DIODE DISPLAY SUBSTRATE, ORGANIC LIGHT EMITTING DIODE DISPLAY APPARATUS, AND METHOD OF FABRICATING ORGANIC LIGHT EMITTING DIODE DISPLAY SUBSTRATE 审中-公开
公开(公告)号：EP3688810A1
公开(公告)日：2020-08-05
申请号：EP17908769.7
申请日：2017-09-26
申请人： BOE Technology Group Co., Ltd.
发明人： LIU, Fengjuan , SONG, Zhen
IPC分类号： H01L27/32

2. 发明公开

EP3622558A1 DISPLAY SUBSTRATE, DISPLAY APPARATUS, AND METHOD OF FABRICATING DISPLAY SUBSTRATE 审中-实审
公开(公告)号：EP3622558A1
公开(公告)日：2020-03-18
申请号：EP17885445.1
申请日：2017-11-02
申请人： BOE Technology Group Co., Ltd.
发明人： LIU, Fengjuan , SONG, Youngsuk
IPC分类号： H01L27/32 , H01L51/52 , H01L51/56

3. 发明公开

EP3444861A1 OLED DISPLAY PANEL, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE 有权
公开(公告)号：EP3444861A1
公开(公告)日：2019-02-20
申请号：EP18189500.4
申请日：2018-08-17
申请人： BOE Technology Group Co., Ltd.
发明人： SONG, Zhen , WANG, Guoying , LIU, Fengjuan
IPC分类号： H01L51/52 , H01L27/32
摘要： An OLED display panel includes a cover (1) and a backplane (2), a plurality of color filter (CF) units (12) are arranged in an array on the cover (1); auxiliary cathodes (11) are filled into gaps among the CF units (12); a planarization layer (13) is disposed on the auxiliary cathodes (11) and the CF units (12); a plurality of openings (131) are disposed in the planarization layer (13) at locations corresponding to the auxiliary cathodes (11); a plurality of spacers (14) are disposed on the planarization layer (13) at locations corresponding to the auxiliary cathodes (11); a transparent electrode layer (15) is disposed on the planarization layer (13) and the spacers (14) and is communicated with the auxiliary cathodes (11) via the openings (131); and the plurality of CF units (12) of the cover (1) and pixel regions (21) of the backplane (2) are oppositely arranged.

4. 发明公开

EP4207152A1 DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE 审中-实审
公开(公告)号：EP4207152A1
公开(公告)日：2023-07-05
申请号：EP21944590.5
申请日：2021-06-10
申请人： BOE Technology Group Co., Ltd.
发明人： YANG, Wei , LIU, Fengjuan , LIU, Wei , NING, Ce , YUAN, Guangcai
IPC分类号： G09G3/20
摘要： A display panel, a manufacturing method thereof, and a display device are provided. The display panel includes a first transistor (T1), and the display panel further includes a base substrate (81), a second conductive layer, a second active layer, a third gate insulating layer (87), and a third conductive layer. The second conductive layer is on a surface of the base substrate (81) and includes a first conductive part (1G11) for forming a first gate of the first transistor (T1). The second active layer is on a surface of the second conductive layer away from the base substrate (81) and includes a first active part (71), which includes a first sub-active part (711), a second sub-active part (712), and a third sub-active part (713) connected between the first sub-active part (711) and the second sub-active part (712). The first sub-active part (711) is used to form a first electrode of the first transistor (T1), the second sub-active part (712) is used to form a second electrode of the first transistor (T2), and a portion of the third sub-active part (713) is used to form a channel region of the first transistor (T1). An orthographic projection of the first conductive part (1G11) on the base substrate (81) covers an orthographic projection of the third sub-active part (713) on the base substrate (81). The third gate insulating layer (87) is on a surface of the second active layer away from the base substrate (81), and an orthographic projection of the third gate insulating layer on the base substrate (81) covers the orthographic projection of the first active part on the base substrate (81). The third conductive layer is on a surface of the third gate insulating layer away from the base substrate (81). The third conductive layer includes a second conductive part (2Re12) for forming a second gate of the first transistor (T1). An orthographic projection of the second conductive part (2Re12) on the base substrate (81) covers the orthographic projection of the channel region of the first transistor (T1) on the base substrate (81). The display panel has better driving effect.

5. 发明公开

EP4141959A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY DEVICE 审中-实审
公开(公告)号：EP4141959A1
公开(公告)日：2023-03-01
申请号：EP21921769.2
申请日：2021-01-28
申请人： BOE Technology Group Co., Ltd.
发明人： HUANG, Jie , HE, Jiayu , NING, Ce , LI, Zhengliang , HU, Hehe , LIU, Fengjuan , YAO, Nianqi , ZHAO, Kun , ZHOU, Tianmin , WANG, Jiushi , TIAN, Zhongpeng
IPC分类号： H01L29/786
摘要： The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two laminated metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the metal oxide semi-conductor layer in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium configured to absorb photo-generated electrons in a metal oxide semi-conductor and reduce a photo-generated current caused by light irradiation. The thin film transistor has high stability and high mobility.

6. 发明公开

EP4167291A1 METAL OXIDE SEMICONDUCTOR MATERIAL, TARGET MATERIAL AND PREPARATION METHOD THEREFOR, THIN FILM TRANSISTOR AND PREPARATION METHOD THEREFOR 审中-实审
公开(公告)号：EP4167291A1
公开(公告)日：2023-04-19
申请号：EP21905343.6
申请日：2021-11-02
申请人： BOE Technology Group Co., Ltd. , South China University of Technology
发明人： YUAN, Guangcai , LAN, Linfeng , LIU, Fengjuan , NING, Ce , HU, Hehe , WANG, Fei , PENG, Junbiao
IPC分类号： H01L29/24 , H01L29/786 , H01L21/34 , C23C14/34 , C23C14/08
摘要： A metal oxide semiconductor material, comprising: a semiconductor matrix material; and at least one rare earth compound doped in the semiconductor matrix material. The general formula of each rare earth compound is represented as (M FD ) a A b . In the general formula (M FD ) a A b , M FD is selected from one of rare earth elements capable of generating an f-d transition, A is selected from an element capable of causing a wavelength band of an absorption spectrum of the corresponding M FD having an f-d transition to be redshifted into a visible light wavelength band range, a is the number of atoms of the element M FD in the general formula (M FD ) a A b , and b is the number of atoms of the element A.

7. 发明公开

EP4131424A1 METAL OXIDE TFT AND MANUFACTURING METHOD THEREFOR, AND X-RAY DETECTOR AND DISPLAY PANEL 审中-实审
公开(公告)号：EP4131424A1
公开(公告)日：2023-02-08
申请号：EP21931224.6
申请日：2021-10-22
申请人： BOE Technology Group Co., Ltd.
发明人： HU, Hehe , LIU, Fengjuan , YUAN, Guangcai , HE, Jiayu , NING, Ce , LI, Zhengliang , ZHAO, Kun
IPC分类号： H01L29/786
摘要： The present application belongs to the technical field of electronics. Disclosed are a metal oxide TFT and a manufacturing method therefor, and an x-ray detector and a display panel. The method comprises: forming, on a base substrate, an active layer which is made of a metal oxide semiconductor material, and a functional layer which is stacked on the active layer and comprises lanthanide metallic elements; and performing an annealing treatment on the active layer and the functional layer, so that the lanthanide metallic elements in the functional layer are diffused into the active layer. The lanthanide metallic elements diffused into the active layer can form a trap state in the active layer, and photo-induced electrons generated by the active layer under illumination can be captured by the trap state, so that the illumination stability of the active layer is improved. The problem in the related art of a relatively poor light stability of an active layer of a metal oxide TFT is solved, and the effect of improving the light stability of an active layer of a metal oxide TFT is realized.

8. 发明公开

EP3293771A1 OXIDE FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE 审中-公开
标题翻译：氧化物膜晶体管，阵列基板和显示装置
公开(公告)号：EP3293771A1
公开(公告)日：2018-03-14
申请号：EP15891197.4
申请日：2015-09-15
申请人： BOE Technology Group Co., Ltd.
发明人： WANG, Meili , SUN, Hongda , LIU, Fengjuan , HSIN, Lung Pao
IPC分类号： H01L29/786 , H01L27/12 , H01L29/10
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/10 , H01L29/1054 , H01L29/225 , H01L29/227 , H01L29/24 , H01L29/78696
摘要： The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.
摘要翻译：本发明实施例提供了一种氧化物TFT，阵列基板和显示装置，所述氧化物TFT的氧化物沟道层包括前沟道氧化层和后沟道氧化层，所述背沟道氧化层的导带底高于所述前沟道氧化物层的导带底部，并且所述背沟道氧化物层的带隙大于所述前沟道氧化物层的带隙。在本发明提供的氧化物TFT，阵列基板和显示装置中，可以通过在多层结构的氧化物沟道层之间形成的电位差积累大量电子，以增加载流子浓度氧化物沟道层来实现改善TFT迁移率而不损坏TFT稳定性的目的。

9. 发明公开

EP3128558A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, DISPLAY SUBSTRATE AND DISPLAY DEVICE 有权
标题翻译：德黑兰，德黑兰，德黑兰，安吉格列斯特
公开(公告)号：EP3128558A1
公开(公告)日：2017-02-08
申请号：EP15850214.6
申请日：2015-02-27
申请人： BOE Technology Group Co., Ltd.
发明人： HSIN, Lung Pao , LIU, Fengjuan
IPC分类号： H01L29/45 , H01L29/786
CPC分类号： H01L29/78618 , H01L27/1225 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L29/786 , H01L29/7869 , H01L29/78696
摘要： Embodiments of the present invention relates to a thin film transistor and a method for manufacturing the same, a display substrate and a display device. The thin film transistor comprises an active layer, a source electrode, a drain electrode and an ohmic contact layer, wherein the ohmic contact layer is disposed between the active layer and the source electrode and/or between the active layer and the drain electrode to improve an ohmic contact property of the active layer with the source electrode and/or the drain electrode. The present invention solves the problem of poor ohmic contact effect between the active layer and the source and drain electrodes in the existing thin film transistor, thereby improving the ohmic contact property of the active layer with the source and drain electrodes and meanwhile improving display effect of images of a display.
摘要翻译：本发明的实施例涉及薄膜晶体管及其制造方法，显示基板和显示装置。薄膜晶体管包括有源层，源电极，漏电极和欧姆接触层，其中欧姆接触层设置在有源层和源电极之间和/或有源层和漏电极之间以改善有源层与源电极和/或漏电极的欧姆接触特性。本发明解决了现有薄膜晶体管中的有源层与源极和漏极之间的欧姆接触效应差的问题，从而提高了有源层与源极和漏极的欧姆接触特性，同时提高了显示效果显示器的图像。

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