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1. 发明公开

EP1032032A2 Tailoring of a wetting/barrier layer to reduce electromigration in an aluminium interconnect 审中-公开
标题翻译： Auslegung einer Benetzungs- / Barriere-Schichtfürverringerte Elektromigration bei Aluminiumverbindungsleitungen
公开(公告)号：EP1032032A2
公开(公告)日：2000-08-30
申请号：EP00300855.4
申请日：2000-02-03
申请人： Applied Materials, Inc.
发明人： Su, Jingang , Yao, Gongda , Xu, Zhang , Chen, Fusen
IPC分类号： H01L21/768
CPC分类号： H01L21/76846 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： We have discovered that it is not necessary to have a tri-layer wetting layer/barrier layer structure (Ti/TiN/TiN x ) of the kind described in several of the references cited above to obtain a subsequently deposited aluminum interconnect layer having excellent electromigration properties. We have discovered a number of different wetting layer or wetting/barrier layer structures which enable depositing of overlying aluminum interconnect layers having (111) texturing sufficient to provide a Rocking Curve FWHM angle θ of about 1 ° or less. These barrier layers include: 1) Ti alone, where the Ti is deposited using a high density plasma; 2) Ti/TiN, where both layers are deposited using a high density plasma; and, 3) Ti/TiN, where the Ti layer is deposited using a high density plasma and the TiN layer is deposited using standard sputtering techniques or collimated sputtering techniques. These barrier layers can be formed on a substrate in a single process chamber or in two process chambers, depending on the composition of the barrier layer and the features available in a given deposition chamber. In addition, we have discovered that when it is desired to use a tri-layer barrier layer (for reasons other than electromigration resistance), a Ti/TiN/TiN x tri-layer having at least the initial Ti layer formed in a high density plasma provides excellent electromigration resistance in an aluminum layer subsequently deposited thereover. This is true even when the aluminum deposition temperature is below about 350 °C, for interconnect applications. We further determined that the application of bias to a substrate (to attract ions toward the substrate) during deposition of at least the initial Ti layer is beneficial in improving the (111) texturing of a subsequently-deposited aluminum layer up to a point, after which the (111) texturing decreases.
摘要翻译：我们已经发现，不需要具有上述几个参考文献中所述类型的三层润湿层/阻挡层结构（Ti / TiN / TiNx），以获得具有优异电迁移性能的随后沉积的铝互连层。我们已经发现了许多不同的润湿层或润湿/阻挡层结构，其能够沉积具有足以提供摇摆曲线FWHM角度的（111）纹理的上覆铝互连层; 约1°以下。这些阻挡层包括：1）单独的Ti，其中使用高密度等离子体沉积Ti; 2）Ti / TiN，其中使用高密度等离子体沉积两层; 和3）Ti / TiN，其中使用高密度等离子体沉积Ti层，并使用标准溅射技术或准直溅射技术沉积TiN层。取决于阻挡层的组成和在给定的沉积室中可获得的特征，这些阻挡层可以在单个处理室中的基板上或两个处理室中形成。此外，我们已经发现，当希望使用三层阻挡层（由于不具有电迁移电阻的原因）时，至少具有以高密度等离子体形成的初始Ti层的Ti / TiN / TiNx三层在随后沉积的铝层中提供优异的电迁移率。即使当铝沉积温度低于约350℃时，对于互连应用也是如此。我们进一步确定在至少初始Ti层的沉积期间向衬底施加偏压（以吸引离子到衬底）有利于在随后沉积的铝层的（111）纹理化之后，直到一个点（111）纹理减少。

2. 发明公开

EP1081754A3 Cleaning contact area with successive fluoride and hydrogen plasmas 审中-公开
标题翻译：接触表面的清洁通过连续氟化物和氢等离子体
公开(公告)号：EP1081754A3
公开(公告)日：2001-12-05
申请号：EP00307539.7
申请日：2000-09-01
申请人： Applied Materials, Inc.
发明人： Cohen, Barney M. , Su, Jingang , Ngan, Kenny King-Tai , Chen, Jr-Jyan
IPC分类号： H01L21/306 , H01L21/321 , H01L21/285
CPC分类号： H01L21/02063 , H01L21/76814 , H01L21/76843 , H01L21/76844 , Y10S438/906
摘要： A method of cleaning a contact area (17) of a semiconductor or metal region (12) on a substrate of an electronic device. First, the contact area is cleaned by exposing the substrate to a plasma that includes fluorine-containing species (102). Second, the substrate is exposed to a second atmosphere that scavenges fluorine (103) preferably formed by a plasma decomposition of a hydrogen-containing gas. The second atmosphere removes any fluorine residue remaining on the contact area and overcomes any need to include argon sputtering in the cleaning process. Another aspect of the invention is a method of depositing a refractory metal over a contact area of a semiconductor region on a substrate. The contact area is cleaned according to the two-step process. Then a refractory metal (52) is deposited over the contact area. The two-step cleaning process can reduce the electrical resistance between the refractory metal and the semiconductor region. Furthermore, if the substrate is annealed (104) to interdiffuse atoms of the semiconductor material and the refractory metal, the two-step cleaning process can reduce the anneal temperature required to achieve a desired low electrical resistance.

3. 发明公开

EP1032032A3 Tailoring of a wetting/barrier layer to reduce electromigration in an aluminium interconnect 审中-公开
标题翻译：在铝互连降低电润湿/势垒层的设计
公开(公告)号：EP1032032A3
公开(公告)日：2001-07-11
申请号：EP00300855.4
申请日：2000-02-03
申请人： Applied Materials, Inc.
发明人： Su, Jingang , Yao, Gongda , Xu, Zhang , Chen, Fusen
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L21/76846 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A number of different wetting layer or wetting/barrier layer structures enables depositing of overlying aluminum interconnect layers having (111) texturing sufficient to provide a Rocking Curve FWHM angle θ of about 1° or less. These barrier layers include: 1) Ti alone, where the Ti is deposited using a high density plasma; 2) Ti/TiN, where both layers are deposited using a high density plasma; and, 3) Ti/TiN, where the Ti layer is deposited using a high density plasma and the TiN layer is deposited using standard sputtering techniques or collimated sputtering techniques. These barrier layers can be formed on a substrate in a single process chamber or in two process chambers, depending on the composition of the barrier layer and the features available in a given deposition chamber. When it is desired to use a tri-layer barrier layer (for reasons other than electromigration resistance), a Ti/TiN/TiN x tri-layer having at least the initial Ti layer formed in a high density plasma provides excellent electromigration resistance in an aluminum layer subsequently deposited thereover. This is true even when the aluminum deposition temperature is below about 350 °C, for interconnect applications. The application of bias to a substrate (to attract ions toward the substrate) during deposition of at least the initial Ti layer is beneficial in improving the (111) texturing of a subsequently-deposited aluminum layer up to a point, after which the (111) texturing decreases.

4. 发明公开

EP1081754A2 Cleaning contact area with successive fluoride and hydrogen plasmas 审中-公开
标题翻译：氟化物与瓦斯堡离子等离子体的反应
公开(公告)号：EP1081754A2
公开(公告)日：2001-03-07
申请号：EP00307539.7
申请日：2000-09-01
申请人： Applied Materials, Inc.
发明人： Cohen, Barney M. , Su, Jingang , Ngan, Kenny King-Tai , Chen, Jr-Jyan
IPC分类号： H01L21/306
CPC分类号： H01L21/02063 , H01L21/76814 , H01L21/76843 , H01L21/76844 , Y10S438/906
摘要： A method of cleaning a contact area (17) of a semiconductor or metal region (12) on a substrate of an electronic device. First, the contact area is cleaned by exposing the substrate to a plasma that includes fluorine-containing species (102). Second, the substrate is exposed to a second atmosphere that scavenges fluorine (103) preferably formed by a plasma decomposition of a hydrogen-containing gas. The second atmosphere removes any fluorine residue remaining on the contact area and overcomes any need to include argon sputtering in the cleaning process. Another aspect of the invention is a method of depositing a refractory metal over a contact area of a semiconductor region on a substrate. The contact area is cleaned according to the two-step process. Then a refractory metal (52) is deposited over the contact area. The two-step cleaning process can reduce the electrical resistance between the refractory metal and the semiconductor region. Furthermore, if the substrate is annealed (104) to interdiffuse atoms of the semiconductor material and the refractory metal, the two-step cleaning process can reduce the anneal temperature required to achieve a desired low electrical resistance.
摘要翻译：一种清洁电子设备的基板上的半导体或金属区域（12）的接触区域（17）的方法。首先，通过将衬底暴露于包含含氟物质（102）的等离子体来清洁接触区域。第二，将基底暴露于清除氟（103）的第二气氛，优选通过含氢气体的等离子体分解形成。第二种气氛除去残留在接触区域上的任何氟残余物，并克服了在清洗过程中需要包括氩气溅射的任何需要。本发明的另一方面是在衬底上的半导体区域的接触区域上沉积难熔金属的方法。接触面积按照两步法进行清洗。然后在接触区域上沉积难熔金属（52）。两步清洗工艺可以降低难熔金属和半导体区域之间的电阻。此外，如果衬底被退火（104）以相互扩散半导体材料和难熔金属的原子，则两步清洁工艺可以降低实现期望的低电阻所需的退火温度。

5. 发明公开

EP1094496A2 Sputtering chamber shield promoting reliable plasma ignition 审中-公开
标题翻译：促进了可靠的等离子体点火注射器屏蔽空间
公开(公告)号：EP1094496A2
公开(公告)日：2001-04-25
申请号：EP00308668.3
申请日：2000-10-03
申请人： Applied Materials, Inc.
发明人： Su, Jingang , Yee, Nelson A. , Forster, John C. , Ngan, Kenny King-Tai , Yang, Lisa L.
IPC分类号： H01J37/34
CPC分类号： H01J37/3441 , C23C14/3407 , C23C14/35 , C23C14/564 , H01J37/3402
摘要： A shield for a DC magnetron sputtering reactor, particularly advantageous for reliably igniting the plasma used in sputtering a ferromagnetic material (80) such as cobalt or nickel. The grounded shield (24) includes a slanted portion (96) separated from the beveled periphery (84) of the target by a small gap operating as a dark space. The shield also includes a straight cylindrical portion (102) surrounding the main processing area. The slanted portion is joined to the cylindrical portion at a knee (100). According to one embodiment of the invention, the knee is located greater than 9mm (distance d) from the face of the target (80) and at a radial position at least 1mm inward of the outer periphery of the target face.

6. 发明公开

EP1047123A2 Method for cleaning high aspect ratio openings by reactive plasma etching 审中-公开
标题翻译：通过反应性离子蚀刻的装置，用于具有高纵横比开口的纯化的方法
公开(公告)号：EP1047123A2
公开(公告)日：2000-10-25
申请号：EP00107941.7
申请日：2000-04-14
申请人： APPLIED MATERIALS, INC.
发明人： Cohen, Barney M. , Su, Jingang , Ngan, Kenny King-Tai
IPC分类号： H01L21/3213 , C23C16/02 , H01J37/32
CPC分类号： H01L21/31116 , H01L21/76804 , H01L21/76814
摘要： Native oxides can be removed from a substrate (54) having high aspect ratio openings therein by using a plasma gas precursor mixture of a reactive halogen-containing gas and a carrier gas such as helium. The lightweight ions generated in the plasma react with oxygen to produce very volatile oxygen-containing species that can be readily removed through the exhaust system of the plasma chamber (40), preventing re-deposition of oxides on the surface of the substrate (54) or on the sidewalls or bottom of the openings. When the substrate (54) is mounted in a plasma chamber (40) having dual power sources (74, 80) that can form a plasma above the substrate (54) and can apply bias to the substrate, tapered openings are formed rapidly that can be readily filled without forming voids.

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