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1. 发明公开

EP1143222A1 Method and apparatus for detecting the thickness of copper oxide 审中-公开
标题翻译： Verfahren und Vorrichtung zur Messung der Schichtdicke von Kupferoxyd
公开(公告)号：EP1143222A1
公开(公告)日：2001-10-10
申请号：EP01107757.5
申请日：2001-04-03
申请人： APPLIED MATERIALS, INC.
发明人： Subrahmanyan, Suchitra , Samoilov, Arkadii V. , Mosely, Roderick C.
IPC分类号： G01B11/06 , H01L21/66
CPC分类号： G01B11/0625 , G01B7/06 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus are provided for measuring the thickness of a copper oxide layer (S 2 ) formed on an underlying copper layer (S 1 ). The method either measures a bulk characteristic of the copper layer, through the copper oxide layer (as in the case of sheet resistance) or determines the thickness of the copper oxide by measuring the attenuation caused by the copper oxide, which is a monotonic function of the thickness of the copper oxide layer (as in the case of reflectivity). A processor (15) stores correlated data (e.g., reflectivity measurements obtained for various copper oxide thicknesses) or a relationship (e.g., a formula) which correlates a given measurement to a given copper oxide thickness. The method may be used in situ or ex situ and during either vacuum or non-vacuum processes.
摘要翻译：提供了一种测量形成在下面的铜层（S1）上的氧化铜层（S2）的厚度的方法和装置。该方法通过氧化铜层（如在薄层电阻的情况下）测量铜层的体积特性，或通过测量由氧化铜引起的衰减来确定氧化铜的厚度，该氧化铜是单调函数氧化铜层的厚度（如反射率的情况）。处理器（15）存储相关数据（例如，针对各种氧化铜厚度获得的反射率测量）或将给定测量与给定氧化铜厚度相关联的关系（例如，公式）。该方法可以在真空或非真空过程中原位或非原位使用。

2. 发明公开

EP0776991A1 Plasma annealing of thin films 失效
标题翻译： PlasmaglühenvonDünnschichten
公开(公告)号：EP0776991A1
公开(公告)日：1997-06-04
申请号：EP96308849.7
申请日：1996-12-05
申请人： APPLIED MATERIALS, INC.
发明人： Danek, Michael , Englhardt, Eric , Liao, Marvin , Mosely, Roderick C. , Chern, Chyi , Littau, Karl A. , Raajimakers, Ivo
IPC分类号： C23C16/56 , C23C16/34
CPC分类号： H01L21/76856 , C23C16/34 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/336 , H01L21/28512 , H01L21/76843 , H01L21/76862 , H01L21/76864
摘要： A plasma annealing system includes a chemical vapor deposition chamber (112) and a radio frequency source (147). Also provided are a showerhead (136) for introducing gases into the camber and a susceptor (116) for supporting a wafer (114). After a thin film has been deposited by a CVD process, a gas mixture containing nitrogen, hydrogen, and argon is introduced through the showerhead. The showerhead and susceptor are each driven by the radio frequency source, creating a plasma in the chamber. Ions from the plasma bombard the film on the surface of the wafer, thereby improving its characteristics. The presence of hydrogen in the plasma reduces the amount of carbon present in the film and on the surfaces of the chamber.
摘要翻译：等离子体退火系统包括化学气相沉积室（112）和射频源（147）。还提供了用于将气体引入外倾角的喷头（136）和用于支撑晶片（114）的基座（116）。在通过CVD工艺沉积薄膜之后，通过喷头引入含有氮气，氢气和氩气的气体混合物。喷头和感受体各自由射频源驱动，在腔室中产生等离子体。来自等离子体的离子轰击晶片表面上的膜，从而改善其特性。在等离子体中氢的存在减少了膜中和室的表面上存在的碳的量。

3. 发明公开

EP0867941A3 An interconnect structure for use in an intergrated circuit 失效
标题翻译：一种用于集成电路的连接结构
公开(公告)号：EP0867941A3
公开(公告)日：2000-04-05
申请号：EP98302378.9
申请日：1998-03-27
申请人： Applied Materials, Inc.
发明人： Liao, Marvin , Chern, Chyi , Tseng, Jennifer , Danek, Michal , Mosely, Roderick C. , Littau, Karl , Raaijmakers, Ivo
IPC分类号： H01L21/321
CPC分类号： C23C16/34 , C23C16/4581 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01L21/321 , H01L21/76838 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L23/485 , H01L23/5226 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： A structure is formed in an integrated circuit to provide for the coupling of elements in the integrated circuit. The structure extends form a conductive surface (202) through a channel (200) extending above the conductive surface. The structure includes a layer of a refractory metal (205), a layer of a metal nitride (206), and a layer of a metal (208). The layer of the refractory metal is deposited on the conductive surface and inner walls of the channel. The layer of the metal nitride is formed on the layer of the refractory metal. The layer of the metal nitride has a thickness extending from the layer of the refractory metal of less than 130 Å. The layer of the metal is deposited on the layer of the metal nitride.

4. 发明公开

EP0732731A3 Treatment of a titanium nitride layer to improve resistance to elevated temperatures 失效
标题翻译：氮化钛层的处理，以改善到更高的温度的电阻
公开(公告)号：EP0732731A3
公开(公告)日：1997-10-08
申请号：EP96103468.3
申请日：1996-03-06
申请人： APPLIED MATERIALS INC.
发明人： Ngan, Kenny King-Tai , Mosely, Roderick C.
IPC分类号： H01L21/285
CPC分类号： H01L21/76856 , H01L21/76843
摘要： A method of stabilizing chemical vapor deposited titanium nitride layers so that they can withstand a subsequent high temperature deposition of aluminum which comprises heating said film in nitrogen containing from about 3-15% by volume of oxygen. When aluminum is deposited over the treated titanium nitride film, the barrier properties of the titanium nitride are maintained up to temperatures of at least about 575°C.

5. 发明公开

EP0818560A3 Construction of a film on a semiconductor wafer 失效
标题翻译： Herstellung eines Films auf einem Halbleiterscheibchen
公开(公告)号：EP0818560A3
公开(公告)日：2001-01-03
申请号：EP97305021.4
申请日：1997-07-09
申请人： APPLIED MATERIALS, INC.
发明人： Chern, Chyl , Danek, Michal , Liao, Marvin , Mosely, Roderick C. , Littau, Karl , Raaijmakers, Ivo , Smith, David C.
IPC分类号： C23C16/56 , C23C16/34 , C23C16/52 , H01L21/318 , H01L21/324
CPC分类号： H01L21/76864 , C23C16/34 , C23C16/45565 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/2001 , H01J2237/336 , H01L21/28512 , H01L21/76843 , H01L21/76856 , H01L21/76862
摘要： The construction of a film on a wafer (14), which is placed in a processing chamber (112), may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized. Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber, until all three steps are completed. A semiconductor wafer processing chamber (112) for carrying out such an in-sutu construction may include a processing chamber, a showerhead (136) a wafer support (116) and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support (116) supports a wafer (14) in the processing chamber. The rf signal means is coupled via to matching network to the showerhead (136) and the wafer support (116) for providing a first rf signal to the showerhead and a second rf signal to the wafer support.
摘要翻译：放置在处理室（112）中的晶片（14）上的膜的构造可以通过以下步骤进行。一层材料沉积在晶片上。接下来，将材料层退火。一旦退火完成，材料就可能被氧化。或者，一旦退火完成，材料可能暴露于硅气体。沉积，退火和氧化或硅气体暴露都可以在相同的室中进行，而不需要从室中除去晶片，直到完成所有三个步骤。用于执行这种内部构造的半导体晶片处理室（112）可以包括处理室，喷头（136），晶片支撑件（116）和射频信号装置。淋浴头将气体供应到处理室中，而晶片支撑件（116）在处理室中支撑晶片（14）。 rf信号装置经由匹配网络耦合到喷头（136）和晶片支撑（116），用于向喷头提供第一射频信号，并将第二射频信号提供给晶片支架。

6. 发明公开

EP0871217A2 Nitrogen-treated titanium or silicon layer to prevent interaction of titanium or silicon and aluminum 失效
标题翻译：用氮气，钛或硅处理的层，以防止钛或硅与铝的相互作用
公开(公告)号：EP0871217A2
公开(公告)日：1998-10-14
申请号：EP98302795.4
申请日：1998-04-09
申请人： APPLIED MATERIALS, INC.
发明人： Chen, Liang-Yuh , Guo, Ted , Mosely, Roderick C.
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： C23C14/5826 , C23C14/14 , C23C14/586 , C23C16/06 , C23C16/56 , H01L21/76843 , H01L21/76856 , H01L21/76876 , H01L21/76877
摘要： The present invention generally provides a method for processing a substrate having exposed surfaces of titanium and/or silicon prior to deposition of aluminum. The substrate is positioned adjacent a process zone which provides a nitrogen plasma so that exposed areas of titanium and silicon on the substrate are stuffed with nitrogen to form titanium nitride (TiN) and various compounds of silicon and nitrogen (Si x N y ), respectively. The nitrogen treated surfaces, ie, TiN and silicon/nitrogen compounds, are resistant to interaction with aluminum. In this manner, the formation of electrically insulating TiAl 3 and/or the spiking of silicon is reduced or eliminated.
摘要翻译：本发明基因的反弹提供用于处理具有钛和/或硅的铝沉积之前暴露表面的基底的方法。基板位于邻近其提供氮等离子体钛和硅在基板上的，从而没有暴露区域填满了氮气，以形成氮化钛（TiN）和硅和氮的各种化合物的方法区（硅X N Y），分别。氮处理表面，即，锡和硅/氮化合物，是与铝相互作用有抗性。以这种方式，电绝缘TiAl3和/或硅的尖峰的形成被减少或消除。

7. 发明公开

EP0867941A2 An interconnect structure for use in an intergrated circuit 失效
标题翻译： Eine Verbindungsstrukturfüreine integrierte Schaltung
公开(公告)号：EP0867941A2
公开(公告)日：1998-09-30
申请号：EP98302378.9
申请日：1998-03-27
申请人： Applied Materials, Inc.
发明人： Liao, Marvin , Chern, Chyi , Tseng, Jennifer , Danek, Michal , Mosely, Roderick C. , Littau, Karl , Raaijmakers, Ivo
IPC分类号： H01L23/532
CPC分类号： C23C16/34 , C23C16/4581 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01L21/321 , H01L21/76838 , H01L21/76846 , H01L21/76862 , H01L21/76864 , H01L23/485 , H01L23/5226 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： A structure is formed in an integrated circuit to provide for the coupling of elements in the integrated circuit. The structure extends form a conductive surface through a channel extending above the conductive surface. The structure includes a layer of a refractory metal, a layer of a metal nitride, and a layer of a metal. The layer of the refractory metal is deposited on the conductive surface and inner walls of the channel. The layer of the metal nitride is formed on the layer of the refractory metal. The layer of the metal nitride has a thickness extending from the layer of the refractory metal of less than 130 Å. The layer of the metal is deposited on the layer of the metal nitride.
摘要翻译：在集成电路中形成结构以提供集成电路中的元件的耦合。该结构通过在导电表面上方延伸的通道形成导电表面。该结构包括难熔金属层，金属氮化物层和金属层。难熔金属层沉积在通道的导电表面和内壁上。金属氮化物层形成在难熔金属层上。金属氮化物层具有从难熔金属层延伸小于130安培的厚度。金属层沉积在金属氮化物的层上。

8. 发明公开

EP1143222A8 Method and apparatus for detecting the thickness of copper oxide 审中-公开
标题翻译：用于测量铜的厚度的方法和装置
公开(公告)号：EP1143222A8
公开(公告)日：2002-01-02
申请号：EP01107757.5
申请日：2001-04-03
申请人： APPLIED MATERIALS, INC.
发明人： Subrahmanyan, Suchitra , Samoilov, Arkadii V. , Mosely, Roderick C.
IPC分类号： G01B11/06 , H01L21/66
CPC分类号： G01B11/0625 , G01B7/06 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus are provided for measuring the thickness of a copper oxide layer (S 2 ) formed on an underlying copper layer (S 1 ). The method either measures a bulk characteristic of the copper layer, through the copper oxide layer (as in the case of sheet resistance) or determines the thickness of the copper oxide by measuring the attenuation caused by the copper oxide, which is a monotonic function of the thickness of the copper oxide layer (as in the case of reflectivity). A processor (15) stores correlated data (e.g., reflectivity measurements obtained for various copper oxide thicknesses) or a relationship (e.g., a formula) which correlates a given measurement to a given copper oxide thickness. The method may be used in situ or ex situ and during either vacuum or non-vacuum processes.

9. 发明公开

EP0871218A2 Intergrated CVD/PVD Al planarization using ultra-thin nucleation layers 失效
标题翻译： Integrierte CVD / PVD Al-Planarisierung unter Verwendung vonultradünnenKeimbildungsschichten
公开(公告)号：EP0871218A2
公开(公告)日：1998-10-14
申请号：EP98302798.8
申请日：1998-04-09
申请人： Applied Materials, Inc.
发明人： Chen, Liang-Yuh , Naik, Mehul , Guo, Ted , Mosely, Roderick C.
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , H01J37/32082 , H01L21/288 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877
摘要： The present invention provides a method and apparatus for forming an interconnect with application in small feature sizes (such as quarter micron widths) having high aspect ratios. Generally, the present invention provides a method and apparatus for depositing a wetting layer for subsequent physical vapor deposition to fill the interconnect. In one aspect of the invention, the wetting layer is a metal layer deposited using either CVD techniques or electroplating, such as CVD aluminum (Al). The wetting layer is nucleated using an ultra-thin layer, denoted as ε layer, as a nucleation layer. The ε layer is preferably comprised of a material such as Ti, TiN, Al, Ti/TiN, Ta, TaN, Cu, a flush of TDMAT or the like. The ε layer may be deposited using PVD or CVD techniques, preferably PVD techniques to improve film quality and orientation within the feature. Contrary to conventional wisdom, the ε layer is not continuous to nucleate the growth of the CVD wetting layer thereon. A PVD deposited metal is then deposited on the wetting layer at low temperature to fill the interconnect.
摘要翻译：本发明提供一种用于形成具有高纵横比的小特征尺寸（例如四分之一微米宽度）的互连的方法和装置。通常，本发明提供了一种用于沉积用于后续物理气相沉积以润湿互连的润湿层的方法和装置。在本发明的一个方面，润湿层是使用CVD技术或电镀（诸如CVD铝（Al））沉积的金属层。润湿层使用表示为ε层的超薄层作为成核层成核。 ε层优选由诸如Ti，TiN，Al，Ti / TiN，Ta，TaN，Cu的材料构成，与TDMAT等的齐平。可以使用PVD或CVD技术，优选PVD技术沉积ε层以改善特征内的膜质量和取向。与常规智慧相反，ε层不是连续的，以使其上的CVD润湿层的生长成核。然后在低温下将PVD沉积的金属沉积在润湿层上以填充互连。

10. 发明公开

EP0818560A2 Construction of a film on a semiconductor wafer 失效
标题翻译：在半导体晶片上制造的薄膜
公开(公告)号：EP0818560A2
公开(公告)日：1998-01-14
申请号：EP97305021.4
申请日：1997-07-09
申请人： APPLIED MATERIALS, INC.
发明人： Chern, Chyl , Danek, Michal , Liao, Marvin , Mosely, Roderick C. , Littau, Karl , Raaijmakers, Ivo , Smith, David C.
IPC分类号： C23C16/56 , C23C16/34 , C23C16/52 , H01L21/318 , H01L21/324
CPC分类号： H01L21/76864 , C23C16/34 , C23C16/45565 , C23C16/4581 , C23C16/4586 , C23C16/481 , C23C16/5096 , C23C16/56 , H01J37/32174 , H01J2237/2001 , H01J2237/336 , H01L21/28512 , H01L21/76843 , H01L21/76856 , H01L21/76862
摘要： The construction of a film on a wafer (14), which is placed in a processing chamber (112), may be carried out through the following steps. A layer of material is deposited on the wafer. Next, the layer of material is annealed. Once the annealing is completed, the material may be oxidized.
Alternatively, the material may be exposed to a silicon gas once the annealing is completed. The deposition, annealing, and either oxidation or silicon gas exposure may all be carried out in the same chamber, without need for removing the wafer from the chamber, until all three steps are completed. A semiconductor wafer processing chamber (112) for carrying out such an in-sutu construction may include a processing chamber, a showerhead (136) a wafer support (116) and a rf signal means. The showerhead supplies gases into the processing chamber, while the wafer support (116) supports a wafer (14) in the processing chamber. The rf signal means is coupled via to matching network to the showerhead (136) and the wafer support (116) for providing a first rf signal to the showerhead and a second rf signal to the wafer support.

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