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1. 发明公开

EP0773449A3 Magnetic field sensor 失效
标题翻译： Magnetfeldfühler
公开(公告)号：EP0773449A3
公开(公告)日：1998-11-25
申请号：EP96116894
申请日：1996-10-21
申请人： JAPAN RES DEV CORP
发明人： MOHRI KANEO
IPC分类号： G01R33/02 , G01R33/022 , H01F21/00
CPC分类号： G01R33/022
摘要： A magnetic field sensor for gradient field detection (gradient type magnetic field sensor) cancels relatively uniform disturbance magnetic fields (background magnetic fields) such as the terrestrial field through the use of two magneto-impedance elements, thereby making it possible to detect only a signal magnetic field (gradient field) which is considerably localized spatially. The magnetic field sensor includes a pair of sensor heads (A) made of an amorphous wire (1), and a self-oscillation type electronic circuit (B) for detecting a spatially uniform magnetic field or a differential value of a spatially gradient magnetic field by switching the direction of a bias magnetic field applied to the pair of sensor heads (A).
摘要翻译：用于梯度场检测的磁场传感器（梯度型磁场传感器）通过使用两个磁阻抗元件来消除诸如地面场的相对均匀的干扰磁场（背景磁场），由此使得可以仅检测信号磁场（梯度场），其在空间上显着地局部化。磁场传感器包括由非晶线（1）制成的一对传感器头（A）和用于检测空间均匀磁场或空间梯度磁场的微分值的自激振荡型电子电路（B）通过切换施加到一对传感器头（A）的偏置磁场的方向。

2. 发明公开

EP0746014A3 Method for dry-etching 失效
标题翻译：干
公开(公告)号：EP0746014A3
公开(公告)日：1998-09-30
申请号：EP96303886
申请日：1996-05-30
申请人： JAPAN RES DEV CORP
发明人： KANEKO TADAAKI , KAWAMURA TAKAAKI
IPC分类号： C23F1/12 , C23F4/00 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/321
CPC分类号： H01L21/30621 , H01L21/3065
摘要： The present invention provides a method for dry-etching a solid surface with a gaseous bismuth halide compound, which permits achivement of a simple and perfect dry-process for manufacturing of electoric devices, quantum devices etc., giving a high reproducibility.

3. 发明公开

EP0810308A3 An ultrafine a1 particle and production method thereof 失效
标题翻译：的铝超微粒子和它们的制备方法
公开(公告)号：EP0810308A3
公开(公告)日：1998-05-13
申请号：EP97303596
申请日：1997-05-27
申请人： JAPAN RES DEV CORP , TANAKA SHUN ICHIRO
发明人： TANAKA SHUN-ICHIRO , XU BINGSHE
IPC分类号： B22F9/04 , B22F9/30 , C22C21/00 , C23C14/14 , C23C14/30 , C30B23/02 , C30B29/02 , C22C1/00 , C23C14/28
CPC分类号： C23C14/30 , B22F9/30 , B22F2999/00 , C23C14/14 , C30B23/002 , C30B23/02 , C30B29/02 , Y10T428/30 , B22F2202/11
摘要： An ultrafine Al particle consists of an Al multiply twinned particle. The Al multiply twinned particle has a decahedron structure surrounded by ä111ü planes. The Al multiply twinned decahedral partucle has a diameter of 10 to 30 nm. Such an ultrafine Al particle consisting of the Al multiply twinned decahedral particle is obtained as follows. A metastable Al oxide particle is placed on an amorphous carbon substrate having the reduction effect. Then the electron beam is irradiated to the metastable Al oxide particle placed on the amorphous carbon substrate in the vacuum atmosphere. From the metastable Al oxide particle, Al atoms or Al clusters are emitted and adsorbed to the substrate. By adjusting the electron beam intensity so that the ultrafine Al particle in the above procedure has a diameter from 10 to 30 nm, the Al multiply twinned particle having a decahedron is obtained.

4. 发明公开

EP0248907A4 PHOTOCHROMIC MATERIAL, PHOTOCHROMIC ELEMENT AND METHOD OF RECORDING AND ERASING DATA. 失效
标题翻译： PHOTO铬合金材料与元件和方法储存和擦除数据。
公开(公告)号：EP0248907A4
公开(公告)日：1988-02-17
申请号：EP86906461
申请日：1986-11-06
申请人： JAPAN RES DEV CORP , JINNO MASAFUMI , KAKE ICHIRO , MASUMOTO TSUYOSHI
发明人： NISHINA YUICHIRO , JINNO MASAFUMI , KAKE ICHIRO , MASUMOTO TSUYOSHI
IPC分类号： G02F1/17 , B32B7/02 , C09K9/00 , C09K9/02 , G02F1/15 , G03C1/00 , G03C1/725 , G03C1/73 , G03C1/735 , G03C1/76 , G03C11/00 , G11B7/00 , G11B7/0055 , G11B7/243 , G11B7/249
CPC分类号： G11B7/257 , C09K9/02 , G02F1/15 , G03C1/735 , G11B7/243 , G11B7/249 , Y10S430/163

5. 发明公开

EP0166787A4 COLOUR IMAGE SENSOR. 失效
标题翻译：传感器的彩色图像。
公开(公告)号：EP0166787A4
公开(公告)日：1987-01-28
申请号：EP85900198
申请日：1984-12-21
申请人： JAPAN RES DEV CORP , NISHIZAWA JUNICHI , TAMAMUSHI TAKASHIGE
发明人： ISTVAN BARSONY
IPC分类号： H01L27/146 , H01L31/112 , H04N5/335 , H04N5/355 , H04N5/357 , H01L27/14 , H01L31/10
CPC分类号： H01L31/1126 , H01L27/14679
摘要： A light detector consists of an electrostatic induction transistor in which an n+-type buried layer is provided to restrict the thickness of a high-resistance layer i between the p+-type region constituting a gate and the substrate, and the n+-type buried layer is used as a drain region or a source region. The light detector corresponds to a picture element which receives light of a particular wavelength. The picture elements are arranged like a honeycomb, so that the individual picture elements will selectively receive light of three particular wavelengths, i.e. blue (lambda1), green (lambda2), and red (lambda3), thereby to constitute a colour image sensor, by selecting the following conditions: (1) Distance xi between the in junction of pin junction and the surface (I), (2) Area A (lambdai) of the gate portion (II), where e: 2.718; eta(lambdai) quantum efficiency required for the wavelength lambdai, R(lambdai): reflection coefficient for the wavelength lambdai; alphai(lambdai): absorption coefficient for the wavelength lambdai; Atot = A(lambdai) + A(lambda2) + A(lambda3).

6. 发明公开

EP0205970A2 Process for producing graphite films. 失效
标题翻译： Verfahren zum Herstellen von Graphitfolien。
公开(公告)号：EP0205970A2
公开(公告)日：1986-12-30
申请号：EP86107228
申请日：1986-05-28
申请人： JAPAN RES DEV CORP , MURAKAMI MUTSUAKI
发明人： MURAKAMI MUTSUAKI
IPC分类号： C04B35/524 , D01F9/24
CPC分类号： C04B35/524 , D01F9/24
摘要： Disclosed are a process for producing a graphite film and fiber, which comprises heat treating a film or fiber of at least one polymer selected from the group consisting of a polyoxadiazole, polybenzothiazoles, a polybenzobisthiazole, a polybenzoxazole, a polybenzobisoxazole and a polythiazole under tension at a temperature of 400 DEG to 700 DEG C in vacuo or in an inert gas, and then heat treating the film or fiber at a temperature of at least 1600 DEG C in vacuo or in an inert gas, thereby graphitizing the film or fiber, and a process for producing a graphite film, which comprises heat treating a film of at least one polymer selected from the group consisting of a polyoxadiazole, polybenzothiazoles, a polybenzobisthiazole, a polybenzoxazole, a polybenzobisoxazole, poly(pyromellitic acid imide), poly(m-phenylene isophthalic acid amide), poly(m-phenylenebenzoimidazole), poly(m-phenylenebenzobisimidazole) and a polythiazole at a temperature of at least 1800 DEG C in vacuo or in an inert gas, then impregnating the film with a binder component, and heat treating the impregnated film at a temperature of not more than 1400 DEG C. According to the present invention, almost perfect graphite films and fibers can be extremely easily obtained at a lower temperature. Further, graphite films excellent in electric conductivity and mechanical properties can be produced.
摘要翻译：公开了一种生产石墨膜和纤维的方法，其包括在张力下热处理选自聚恶二唑，聚苯并噻唑，聚苯并二唑，聚苯并恶唑，聚苯并双恶唑和聚噻唑中的至少一种聚合物的膜或纤维在真空中或惰性气体中温度为400〜700℃，然后在真空或惰性气体中，在至少1600℃的温度下对薄膜或纤维进行热处理，由此使薄膜或纤维石墨化，一种生产石墨膜的方法，该方法包括热处理选自聚二恶唑，聚苯并噻唑，聚苯并双噻唑，聚苯并恶唑，聚苯并双恶唑，聚（均苯四甲酸酰亚胺），聚（间 - 亚苯基间苯二甲酸酰胺），聚（间亚苯基苯并咪唑），聚（间亚苯基苯并双咪唑）和聚噻唑，在真空中或惰性的温度下在至少1800℃ 气体，然后用粘合剂成分浸渍膜，并在不高于1400℃的温度下对浸渍的膜进行热处理。根据本发明，在较低温度下极易获得几乎完美的石墨膜和纤维。此外，可以制造导电性和机械性能优异的石墨膜。

7. 发明公开

EP0762467A3 Charged particle guide apparatus and image viewing apparatus for charged particle microscope using the same 失效
标题翻译：相同Ladungsträgerteilchen导向装置和图象使用用于Ladungsträgerteilchenmikroskop观看设备
公开(公告)号：EP0762467A3
公开(公告)日：1998-09-23
申请号：EP96306014
申请日：1996-08-16
申请人： JAPAN RES DEV CORP , HITACHI LTD , HAMAMATSU PHOTONICS KK
发明人： OSAKABE NOBUYUKI , ENDO JUNJI , KODAMA TETSUJI , URAKAMI TSUNEYUKI , TSUCHIYA HIROSHI , OHSUKA SHINJI
IPC分类号： H01J37/22 , H01J37/244 , H01J37/26
CPC分类号： H01J37/22 , H01J37/244
摘要： An electron-microscope image viewing apparatus capable of measuring of a moving speed or a vibration frequency of an atomic structure, a magnetic structure, an electric structure or the like of a specimen even when the structure changes at a high rate. The apparatus includes a charged particle source for emitting charged particles, an illuminating electron lens system for illuminating a specimen with a beam of the charged particles, an image magnifying/projecting lens system for magnifying an image of the specimen formed by charged particles scattered upon transmission through the specimen and projecting the magnified image onto an image forming plane, at least one charged particle extracting means provided on the image forming plane of the image magnifying/projecting lens system for taking out the charged particles from a predetermined portion of the charged particle beam projected onto the image forming plane, at least one charged particle detector for detecting the charged particles taken out through the charged particle extracting means, and a signal processing means for processing a signal outputted from the charged particle detector.

8. 发明公开

EP0216932A4 RHOMBOHEDRAL POLYCRYSTALLINE BORON NITRIDE AND PROCESS FOR ITS PRODUCTION. 失效
标题翻译： RHOMBOHEDRISCHES多晶氮化硼及其生产。
公开(公告)号：EP0216932A4
公开(公告)日：1989-07-26
申请号：EP86901511
申请日：1986-02-27
申请人： JAPAN RES DEV CORP , MATSUDA TOSHITSUGU , NAKAE HIROYUKI , HIRAI TOSHIO
发明人： MATSUDA TOSHITSUGU , NAKAE HIROYUKI , HIRAI TOSHIO
IPC分类号： C01B21/064 , C04B35/583 , C04B35/5831 , C23C16/34 , C30B35/00
CPC分类号： C23C16/342 , C01B21/064 , C01P2002/72 , C01P2004/03 , C04B35/583 , C04B35/5831 , C30B35/002 , Y10S148/113
摘要： Highly pure, high-density rhombohedral polycrystalline boron nitride substantially comprising rhombohedral crystals and having a three-fold axis of symmetry (an axis parallel to axis c according to hexagonal representation) oriented to one direction, which can be obtained in an arbitrary mass or thin film form by a chemical vapor deposition process of introducing a boron source gas and a nitrogen source gas and, optionally, a diluting and carrier gas into a reactor provided with a heated base to deposit boron nitride on the base, while providing a nitrogen source gas- and/or a carrier gas-diffusing layer around the heated base. The resulting boron nitride is extremely useful as semiconductors, crucibles for melting, various high-temperature jigs, high-frequency insulators, microwave transmitting apertures, and boron source for semi-conductors and, in addition, optimal as a precursor of high-pressure phase cubic boron nitride.

9. 发明公开

EP0767212A4 PROCESS FOR PRODUCING AN AQUEOUS SOLUTION OF PHOSPHORYLCHOLINE GROUP BEARING POLYMER AND AQUEOUS SOLUTION OF PHOSPHORYLCHOLINE GROUP BEARING POLYMER 有权转让
标题翻译：用于生产水溶液磷酸胆碱基法的含氟聚合物溶液和水溶液磷酸胆碱基含氯聚合物
公开(公告)号：EP0767212A4
公开(公告)日：1999-04-14
申请号：EP96907752
申请日：1996-04-02
申请人： JAPAN RES DEV CORP
发明人： NAKABAYASHI NOBUO , ISHIHARA KAZUHIKO , SHUTO KENSHIRO , MATSUYAMA KAZUO
IPC分类号： C08F6/00 , C08F6/06 , C08F30/02 , C08L43/02
CPC分类号： C08F6/06 , C08F6/003 , C08F30/02
摘要： A process for producing an aqueous solution of a phosphorylcholine group bearing polymer, comprising polymerizing a polymerizable composition containing a phosphorylcholine group bearing monomer of general formula (1) in the presence of a nonmetallic polymerization initiator soluble in a water-containing medium to obtain a crude aqueous solution of a polymer and purifying the solution by the use of a separation membrane; and an aqueous solution of a phosphorycholine group bearing polymer produced by this process and having an impurity content of 2000 ppm. or below (X: a divalent organic residue; Y: C1-C6 alkyleneoxy; Z: H or R -O-CO- (R : C1-C10 alkyl or C1-C10 hydroxyalkyl); R : H or CH3; R , R and R : H, C1-C6 hydrocarbyl or hydroxylated hydrocarbyl; and m: 0 or 1).

10. 发明公开

EP0737858A4 METHOD AND APPARATUS FOR ADJUSTING ELECTRON-BEAM DEVICE 失效
标题翻译：方法和设备调整ELECTRON DEVICE的
公开(公告)号：EP0737858A4
公开(公告)日：1998-01-07
申请号：EP94918545
申请日：1994-06-22
申请人： JAPAN RES DEV CORP , TOSOH CORP
发明人： TSUKAJIMA JUNICHI , HAYASHI TOSHINORI , ENOKIJIMA TORU
IPC分类号： G01N23/00 , H01J37/256 , G01N23/225
CPC分类号： H01J37/256 , H01J2237/2522
摘要： An electron-beam device comprises an energy analyzer, in which the positions of irradiation and analysis can be brought into agreement with each other easily and precisely. The device comprises an electron lens barrel (401) arranged for deflecting a scanning electron beam ED in the directions X and Y; an energy analyzer (408); and means (416) for displaying an SEM image in a given range on a specimen (407). In this device, the output information obtained from the energy analyzer (408) during the electron-beam scanning is analyzed, and the energy analysis region (504), where electron is taken into the analyzer in a high efficiency, is superimposed on the SEM image. Also, the position (502) irradiated for analysis with an electron beam emitted to the path by means of the electron lens barrel (401) at the moment when in a state equivalent to the non-scanning state is superimposed on the SEM image. The path of the electron beam toward a specimen is deflected so that the region (504) for energy analysis may coincide with the irradiated position (502) on the SEM image.

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