专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明公开

EP3029696A1 OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES 有权转让
标题翻译：包含多孔支架材料和珀洛齐克斯的光电子器件
公开(公告)号：EP3029696A1
公开(公告)日：2016-06-08
申请号：EP16152624.9
申请日：2013-05-20
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEE, Michael
IPC分类号： H01G9/20 , H01L51/42
CPC分类号： H01L51/4213 , H01L31/0324 , H01L51/0032 , H01L51/422 , H01L51/4226 , H01L2031/0344 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.
摘要翻译：本发明提供了一种光电子器件，其包括：（i）多孔介电支架材料; 和（ii）与支架材料接触的具有小于或等于3.0eV的带隙的半导体。典型地，可以是钙钛矿的半导体设置在多孔介电支架材料的表面上，使得其被支撑在支架内的孔的表面上。在一个实施例中，光电子器件是包括光敏层的光电子器件，其中光敏层包括：（a）所述多孔介电支架材料; （b）所述半导体; 和（c）电荷传输材料。本发明进一步提供了作为光电子器件中的光敏材料的用途：（i）多孔介电支架材料; 和（ii）与支架材料接触的具有小于或等于3.0eV的带隙的半导体。进一步提供的是使用包含以下的层：（i）多孔介电支架材料; 和（ii）与所述支架材料接触的具有小于或等于3.0eV的带隙的半导体; 作为光电子器件中的光敏层。另一方面，本发明提供了用于光电子器件的光敏层，其包含（a）多孔介电支架材料; （b）与脚手架材料接触的带隙小于或等于3.0eV的半导体; 和（c）电荷传输材料。

2. 发明授权

EP2850627B1 OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES 有权转让
标题翻译：具有多孔支架材料和钙钛矿亚光电子设备
公开(公告)号：EP2850627B1
公开(公告)日：2016-04-06
申请号：EP13723944.8
申请日：2013-05-20
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEE, Michael
IPC分类号： H01G9/20 , H01L51/42
CPC分类号： H01L51/4213 , H01L31/0324 , H01L51/0032 , H01L51/422 , H01L51/4226 , H01L2031/0344 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.

3. 发明授权

EP2850669B1 PHOTOVOLTAIC DEVICE COMPRISING PEROVSKITES 有权转让
标题翻译：与钙钛矿光伏装置
公开(公告)号：EP2850669B1
公开(公告)日：2016-02-24
申请号：EP13723945.5
申请日：2013-05-20
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEE, Michael
IPC分类号： H01L51/46 , H01L51/42 , H01G9/20
CPC分类号： H01L31/0264 , H01G9/2004 , H01G9/2036 , H01L51/0032 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L2031/0344 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

4. 发明授权

EP2850626B1 OPTOELECTRONIC DEVICES WITH ORGANOMETAL PEROVSKITES WITH MIXED ANIONS 有权转让
标题翻译：具有混合阴离子的有机颚骨的光电子器件
公开(公告)号：EP2850626B1
公开(公告)日：2016-02-24
申请号：EP13723943.0
申请日：2013-05-20
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEE, Michael , MURAKAMI, Takuro
IPC分类号： H01L51/46 , H01G9/20 , H01L51/42
CPC分类号： H01L51/4213 , C07F7/2284 , C07F7/24 , H01G9/2027 , H01G9/2031 , H01L51/0032 , H01L51/0036 , H01L51/0077 , H01L51/4226 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.The invention further provides a mixed-halide perovskite of the formula (I) €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [A][B][X] 3 €ƒ€ƒ€ƒ€ƒ€ƒ(I) wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

5. 发明公开

EP2850627A1 OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES 有权转让
标题翻译：具有多孔支架材料和钙钛矿亚光电子设备
公开(公告)号：EP2850627A1
公开(公告)日：2015-03-25
申请号：EP13723944.8
申请日：2013-05-20
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEE, Michael
IPC分类号： H01G9/20 , H01L51/42
CPC分类号： H01L51/4213 , H01L31/0324 , H01L51/0032 , H01L51/422 , H01L51/4226 , H01L2031/0344 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.

6. 发明公开

EP3005434A1 ORGANIC SEMICONDUCTOR DOPING PROCESS 有权转让
标题翻译： DOTIERUNGSVERFAHRENFÜREINEN ORGANISCHEN HALBLEITER
公开(公告)号：EP3005434A1
公开(公告)日：2016-04-13
申请号：EP14728261.0
申请日：2014-05-30
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEIJTENS, Tomas , ABATE, Antonio , SELLINGER, Alan
IPC分类号： H01L51/00 , H01L51/42 , H01G9/20
CPC分类号： H01L51/002 , H01G9/0029 , H01G9/2013 , H01G9/2027 , H01G9/2059 , H01L51/0032 , H01L51/0035 , H01L51/0036 , H01L51/005 , H01L51/0056 , H01L51/0059 , H01L51/006 , H01L51/4226 , H01L2251/305 , Y02E10/542 , Y02E10/549
摘要： The present invention relates to the doping of organic semiconductors and processes for producing layers of p-doped organic semiconductors. Disclosed is a process for p-doping organic semiconductors comprising treating the organic semiconductor with an oxidized salt of the organic semiconductor. A process for producing a layer of a p-doped organic semiconductor comprising producing a p-doped organic semiconductor by treating the organic semiconductor with an oxidized salt of the organic semiconductor; disposing a composition comprising a solvent and the p-doped organic semiconductor on a substrate; and removing the solvent is also described. Also disclosed is a process for producing a layer of a p-doped organic semiconductor comprising: disposing a composition comprising a solvent, the organic semiconductor and a protic ionic liquid on a substrate; and removing the solvent. A process for producing a semiconductor device comprising a process for doping an organic semiconductor according to the invention is also described. Finally, a high purity p-dopant composition is described.
摘要翻译：本发明涉及有机半导体的掺杂和用于生产p掺杂的有机半导体层的工艺。公开了一种p掺杂有机半导体的方法，包括用有机半导体的氧化盐处理有机半导体。一种用于制造p掺杂有机半导体层的方法，包括通过用有机半导体的氧化盐处理有机半导体来生产p掺杂的有机半导体; 将包含溶剂和p掺杂的有机半导体的组合物设置在基板上; 还描述了除去溶剂。还公开了一种制造p掺杂有机半导体层的方法，包括：将包含溶剂，有机半导体和质子离子液体的组合物设置在基板上; 并除去溶剂。还描述了一种用于制造包括根据本发明的用于掺杂有机半导体的工艺的半导体器件的方法。最后，描述了高纯度p-掺杂剂组合物。

7. 发明公开

EP2850626A1 OPTOELECTRONIC DEVICES WITH ORGANOMETAL PEROVSKITES WITH MIXED ANIONS 有权转让
标题翻译：用混合的阴离子金属有机钙钛矿亚光电子器件
公开(公告)号：EP2850626A1
公开(公告)日：2015-03-25
申请号：EP13723943.0
申请日：2013-05-20
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEE, Michael , MURAKAMI, Takuro
IPC分类号： H01G9/20 , H01L51/42 , H01L51/00
CPC分类号： H01L51/4213 , C07F7/2284 , C07F7/24 , H01G9/2027 , H01G9/2031 , H01L51/0032 , H01L51/0036 , H01L51/0077 , H01L51/4226 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.The invention further provides a mixed-halide perovskite of the formula (I) €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ [A][B][X] 3 €ƒ€ƒ€ƒ€ƒ€ƒ(I) wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

8. 发明公开

EP2850669A1 OPTOELECTRONIC DEVICE COMPRISING PEROVSKITES 有权转让
标题翻译：与钙钛矿光伏装置
公开(公告)号：EP2850669A1
公开(公告)日：2015-03-25
申请号：EP13723945.5
申请日：2013-05-20
申请人： Isis Innovation Limited
发明人： SNAITH, Henry , LEE, Michael
IPC分类号： H01L51/42 , H01G9/20
CPC分类号： H01L31/0264 , H01G9/2004 , H01G9/2036 , H01L51/0032 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L2031/0344 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式