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1. 发明公开

EP1650321A3 A sputtering system 审中-公开
标题翻译：溅射系统
公开(公告)号：EP1650321A3
公开(公告)日：2006-07-05
申请号：EP04028515.7
申请日：2004-12-02
申请人： Applied Films Corporation
发明人： Newcomb, Richard , Nilsen, Oyvind , Robinson, Doug
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3405 , C23C14/3407
摘要： A rotatable target for sputtering is described. This target can include a target backing tube (205) having an exterior surface; a backing layer (210) in contact with the exterior surface of the target backing tube, the backing layer being electrically conductive and thermally non-conductive; and a plurality of target cylinders (215) located around the target backing tube and in contact with the backing layer.
摘要翻译：描述了用于溅射的可旋转靶。该目标可以包括具有外表面的目标背衬管（205）与所述靶衬管的外表面接触的背衬层（210），所述背衬层是导电且不导热的; 以及位于目标背衬管周围并与背衬层接触的多个靶筒（215）。

2. 发明公开

EP1506325A2 SYSTEM AND APPARATUS FOR CONTROL OF SPUTTER DEPOSITION PROCESS 审中-公开
标题翻译：系统和设备控制溅射的
公开(公告)号：EP1506325A2
公开(公告)日：2005-02-16
申请号：EP03731194.1
申请日：2003-05-16
申请人： Applied Films Corporation
发明人： STOWELL, Michael, W. Jr.
IPC分类号： C23C14/34 , C23C14/54 , C23C14/35 , H01J37/32 , H01J37/34
CPC分类号： C23C14/35 , H01J37/3405
摘要： A method and apparatus for sputter deposition in which both a pulsed DC power supply and an RF power supply apply power to the target in the sputter deposition equipment. The pulsed DC power supply provides an on cycle where power is applied to the target, and an off cycle, in which a reverse polarity is applied to the target. The application of the reverse polarity has the effect of removing any charge that may have built up on the surface of the target. This reduces the likelihood of arcing occurring on the surface of the target, which can degrade the quality of the film being deposited on the substrate. By applying RF power simultaneously with the pulsed DC power to the target, the ionization efficiency on the target surface is increased. This results in a greater amount of material being removed from the target surface more quickly.

3. 发明公开

EP1780304A2 PECVD method with modulation of power 审中-公开
标题翻译： PECVD-Verfahren mit Leistungsmodulation
公开(公告)号：EP1780304A2
公开(公告)日：2007-05-02
申请号：EP06022262.7
申请日：2006-10-25
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： C23C16/515 , C23C16/30 , H01J37/32
CPC分类号： C23C16/515 , C23C16/029 , C23C16/308 , C23C16/401 , C23C16/52 , H01J37/32201
摘要： A method of generating a film during a chemical vapor deposition process is disclosed. One embodiment includes generating a first electrical pulse having a first pulse amplitude; using the first electrical pulse to generate a first density of radicalized species; disassociating a feedstock gas using the radicalized species in the first density of radicalized species, thereby creating a first deposition material; depositing the first deposition material on a substrate; generating a second electrical pulse having a second pulse amplitude, wherein the second pulse amplitude is different from the first pulse width; using the second electrical pulse to generate a second density of radicalized species; disassociating a feedstock gas using the radicalized species in the second density of radicalized species, thereby creating a second deposition material; and depositing the second plurality of deposition materials on the first deposition material.
摘要翻译：公开了一种在化学气相沉积工艺期间产生膜的方法。一个实施例包括产生具有第一脉冲幅度的第一电脉冲; 使用第一电脉冲产生第一密度的激进化物种; 使用在自由基化物质的第一密度中的自由基化物质分解原料气体，从而产生第一沉积材料; 将第一沉积材料沉积在基底上; 产生具有第二脉冲幅度的第二电脉冲，其中所述第二脉冲幅度不同于所述第一脉冲宽度; 使用第二电脉冲产生第二密度的激进物质; 使用所述自由基化物质在第二密度的自由基化物质中分离原料气体，从而产生第二沉积材料; 以及将所述第二多个沉积材料沉积在所述第一沉积材料上。

4. 发明公开

EP1734149A2 Method for controlling ion density in a sputtering system 审中-公开
标题翻译：在einem Sputtersystem中的Verfahren zur Steuerung der Ionendichte。
公开(公告)号：EP1734149A2
公开(公告)日：2006-12-20
申请号：EP06011555.7
申请日：2006-06-03
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： H01J37/32935 , C23C14/34 , C23C14/54 , H01J37/3405
摘要： A method for controlling ion density and sputtering rate in a sputtering system is disclosed. In one embodiment, a first pulse-width power signal is applied to the cathode to thereby generate a higher concentration of ions. The pulse-width of the first pulse-width power signal is then decreased to thereby increase the sputtering rate and decrease the ion density around the cathode. Next, the process is repeated to create a modulated signal.
摘要翻译：公开了一种用于控制溅射系统中的离子密度和溅射速率的方法。在一个实施例中，向阴极施加第一脉冲宽度功率信号，从而产生较高浓度的离子。然后降低第一脉冲宽度功率信号的脉冲宽度，从而增加溅射速率并降低阴极周围的离子密度。接下来，重复该过程以产生调制信号。

5. 发明公开

EP1655762A1 Katodenanordnung zur Zerstäubung eines drehbaren Targetrohres 有权
标题翻译： Katodenanordnung zurZerstäubungeines drebbaren Targetrohres
公开(公告)号：EP1655762A1
公开(公告)日：2006-05-10
申请号：EP05007131.5
申请日：2005-03-31
申请人： Applied Films GmbH & Co. KG , Applied Films Corporation
发明人： Newcomb, Richard , Trube, Scott , Riso, Tom , Kawakami, Ken , Marquardt, Dietmar , Sauer, Andreas
IPC分类号： H01J37/34
CPC分类号： F03H1/00 , H01J37/3405
摘要： Die Erfindung betrifft eine Katodenanordnung zur Zerstäubung eines Targetrohres (12) mit einem nicht drehbaren Magnetsystem (23) zur Erzeugung eines Magnetfeldes zum Einschluss eines Plasmas, wobei das Targetrohr (12) innerhalb einer Vakuumkammer durch das Magnetfeld hindurch drehbar ist, wobei in mindestens einer Tragkonstruktion (1) eine antreibbare Tragwelle (6) für das Targetrohr (12) angeordnet ist, wobei ferner innnerhalb des Targetrohres (12) eine Halterung für das Magnetsystem (23) angeordnet ist und wobei zwischen der Tragwelle (6) und dem Targetrohr (12) mindestens eine lösbare Kupplungsanordnung für das Auswechseln des Targetrohres (12) angeordnet ist. Zur Lösung der Aufgabe, bei der eingangs beschriebenen Katodenanordnung gleichzeitig eine hohe und hoch belastbare Koaxialität von Tragwelle(n) (6) und Targetrohren (12), eine zuverlässige Abdichtung gegenüber Wasser und Vakuum und eine leichte, oftmals wiederholbare verschleissarme Verbindung und Trennung von Tragwelle(n) (6) und Targetrohren (12) ohne Bedarf grosser Freiräume und Zeitspannen für die erforderlichen Manipulationen herbei zu führen und einen guten Rundlauf bei konstanter Achslage zu gewährleisten, wird erfindungsgemäss vorgeschlagen, dass mindestens zwischen der antreibbaren Tragwelle (6) und dem Targetrohr (12) ein hierzu koaxiales Distanzstück (15) und zwei lösbare Trennstellen (32/53) angeordnet sind, und dass durch die Trennstellen (32/53) die drehfesten und formsteifen Verbindungen zwischen der Tragwelle (6) und dem Distanzstück (15) einerseits und dem Distanzstück (15) und einem Targetrohr (12) andererseits lösbar und wieder herstellbar sind.
摘要翻译：组件具有布置在支撑结构中的用于管状目标的支撑轴。在轴和目标之间提供可拆卸的联接装置以更换目标。同轴间隔件和两个分离点（32）布置在轴和靶之间。分离点在轴和间隔件之间产生扭矩抵抗和刚性连接，以及间隔件和目标之间的可拆卸连接。

6. 发明公开

EP1734558A1 System for modulating power signals to control sputtering 审中-公开
标题翻译： Anlagefürdie Modulation von Leistungssignalen zur Sputterprozessregelung
公开(公告)号：EP1734558A1
公开(公告)日：2006-12-20
申请号：EP06011554.0
申请日：2006-06-03
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： H01J37/34 , H01J37/32
CPC分类号： H01J37/32137 , H01J37/32027 , H01J37/32036 , H01J37/32743 , H01J37/32752 , H01J37/34
摘要： One embodiment includes a sputtering system (165) that includes a vacuum chamber; a substrate transport system configured to transport a substrate through the vacuum chamber; a cathode (90) for supporting a sputtering target (95), the cathode at least partially inside the vacuum chamber; and a power supply (160) configured to supply power to the cathode and the power supply configured to output a modulated power signal. Depending upon the implementation, the power supply can be configured to output an amplitude-modulated power signal; a frequency-modulated power signal; a pulse-width power signal; a pulse-position power signal; a pulse-amplitude modulated power signal; or any other type of modulated power or energy signal.
摘要翻译：一个实施例包括包括真空室的溅射系统（165）; 衬底输送系统，被配置为将衬底输送通过所述真空室; 用于支撑溅射靶（95）的阴极（90），阴极至少部分地位于真空室内; 以及被配置为向阴极供电的电源（160）和被配置为输出调制功率信号的电源。根据实施方式，电源可以被配置为输出调幅功率信号; 频率调制功率信号; 脉冲宽度功率信号; 脉冲位置功率信号; 脉冲幅度调制功率信号; 或任何其他类型的调制功率或能量信号。

7. 发明公开

EP1731806A1 Dual gate isolating valve 审中-公开
标题翻译：双闸门隔离阀
公开(公告)号：EP1731806A1
公开(公告)日：2006-12-13
申请号：EP06252859.1
申请日：2006-06-02
申请人： Applied Films Corporation
发明人： Petrach, Philip M. , Belgarde, Wayne M. , Strahlendorf, Michael L.
IPC分类号： F16K3/02 , H01J37/32
CPC分类号： F16K3/029 , C23C14/568 , H01J37/32458 , H01J2237/186
摘要： In a coater for applying layers on large substrates, isolation between portions of the coater is provided by dual gate slit valve chambers. A dual gate slit valve has one gate on either side of a wall that has an opening. Gates are clear of the opening in the open position and cover the opening from both sides in the closed position. When one side of the dual gate slit valve chamber is at atmospheric pressure and the other is under vacuum, atmospheric pressure helps to keep the slit valve sealed by pushing one gate against the wall. This works regardless of which side of the valve is at atmosphere. One or more pumps may be mounted on the slit valve chamber.
摘要翻译：在用于在大型基材上涂布层的涂布机中，涂布机各部分之间的隔离由双闸门狭缝阀室提供。双闸门狭缝阀在具有开口的壁的任一侧上具有一个闸门。在关闭位置，门没有处于打开位置的开口并且从两侧覆盖开口。当双闸门狭缝阀室的一侧处于大气压力下而另一侧处于真空时，大气压力通过将一个闸门推向墙壁而有助于保持狭缝阀的密封。无论阀门的哪一侧处于大气，这都是有效的。一个或多个泵可以安装在狭缝阀室上。

8. 发明公开

EP1584707A1 Power coupling for high-power sputtering 审中-公开
标题翻译： LeistungskopplungsvorrichtungfürSputteranlage。
公开(公告)号：EP1584707A1
公开(公告)日：2005-10-12
申请号：EP04026537.3
申请日：2004-11-09
申请人： Applied Films Corporation , Applied Films GmbH & Co. KG
发明人： Newcomb, Richard , Geisler, Michael
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407
摘要： A system and method for coating a substrate is described. One embodiment includes a sputtering system with a power coupler configured to deliver power to a rotatable target (195). The power coupler (210) is positioned in a vacuum chamber (115) or between the bearings (230) and the rotatable target outside the vacuum chamber to limit the current that flows through the bearing.
摘要翻译：描述了用于涂覆基底的系统和方法。一个实施例包括具有功率耦合器的溅射系统，该功率耦合器被配置为将功率传递到可旋转靶（195）。功率耦合器（210）定位在真空室（115）中，或位于真空室外部的轴承（230）和可旋转靶之间，以限制流过轴承的电流。

9. 发明公开

EP1780303A2 System and method for power function ramping of microwave linear discharge sources 审中-公开
标题翻译：装置和方法，用于起动的微波线性放电源功率
公开(公告)号：EP1780303A2
公开(公告)日：2007-05-02
申请号：EP06022261.9
申请日：2006-10-25
申请人： Applied Films Corporation , Applied Materials GmbH & Co. KG
发明人： Stowell, Michael W. , Liehr, Michael , Wieder, Stephan , Dieguez-Campo, José Manuel
IPC分类号： C23C16/515 , H01J37/32
CPC分类号： C23C16/515
摘要： One embodiment of the present invention is a system for depositing films on a substrate. This systems includes a vacuum chamber; a linear discharge tube housed inside the vacuum chamber; a magnetron configured to generate a microwave power signal that can be applied to the linear discharge tube; a power supply configured to provide a signal to the magnetron; and a pulse control connected to the power supply. The pulse control is configured to control the duty cycle of the plurality of pulses, the frequency of the plurality of pulses, and/or the contour of the plurality of pulses.
摘要翻译：本发明的一个方式是用于在衬底上沉积薄膜的系统。该系统包括真空室; 在真空室内部一栋线性放电管; 被配置为产生微波功率信号的磁控管也可以施加到线性放电管; 配置成提供信号到磁控管的电源; 和pulseCONTROL连接到电源。所述pulseCONTROL被配置为控制脉冲的多元化，脉冲的多个频率和/或脉冲的多个轮廓的占空比。

10. 发明公开

EP1734149A3 Method for controlling ion density in a sputtering system 审中-公开
标题翻译：一种用于在溅射系统控制离子密度方法。
公开(公告)号：EP1734149A3
公开(公告)日：2007-09-19
申请号：EP06011555.7
申请日：2006-06-03
申请人： Applied Films Corporation
发明人： Stowell, Michael W.
IPC分类号： C23C14/34 , C23C14/54
CPC分类号： H01J37/32935 , C23C14/34 , C23C14/54 , H01J37/3405
摘要： A method for controlling ion density and sputtering rate in a sputtering system is disclosed. In one embodiment, a first pulse-width power signal is applied to the cathode to thereby generate a higher concentration of ions. The pulse-width of the first pulse-width power signal is then decreased to thereby increase the sputtering rate and decrease the ion density around the cathode. Next, the process is repeated to create a modulated signal.

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