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    • 82. 发明公开
    • Electrical contact for a mems device and method of making
    • Elektrischer Kontaktfürein MEMS-Bauelement und dessen Herstellungsverfahren
    • EP1760039A2
    • 2007-03-07
    • EP06076605.2
    • 2006-08-21
    • Delphi Technologies, Inc.
    • Christenson, John C.
    • B81C5/00
    • B81B7/0006B81B2201/025G01P15/0802G01P15/125
    • A method for making a subsurface electrical contact (34) on a micro-electrical-mechanical-systems (MEMS) device (10). The contact (34) is formed by depositing a layer of polycrystalline silicon (34) onto a surface (16) within a cavity (20) buried under a device silicon layer (24). The polycrystalline silicon layer (34) is deposited in the cavity (20) through holes (30 and 32) etched through the device silicon (24) and reseals the cavity (20) during the polycrystalline silicon deposition step. The polycrystalline silicon layer (24) can then be masked and etched, or etched back to expose the device layer (24) of the micromachined device (10). Through the layer of polycrystalline silicon (34), a center hub (18) of the device (10) may be electrically contacted.
    • 一种用于在微电子机械系统(MEMS)装置(10)上制造地下电接触(34)的方法。 通过将多晶硅层(34)沉积在掩埋在器件硅层(24)下面的空腔(20)内的表面(16)上来形成触点(34)。 多晶硅层(34)通过穿过器件硅(24)蚀刻的孔(30和32)沉积在空腔(20)中,并且在多晶硅沉积步骤期间重新密封空腔(20)。 然后可以对多晶硅层(24)进行掩模和蚀刻,或者回蚀刻以暴露微机械加工装置(10)的装置层(24)。 通过多晶硅层34,可以使器件(10)的中心毂(18)电接触。
    • 83. 发明公开
    • Probing card and inspection apparatus for microstructure
    • Testkarte und Apparat,um Mikrostrukturen zuüberprüfen
    • EP1707532A2
    • 2006-10-04
    • EP06006889.7
    • 2006-03-31
    • TOKYO ELECTRON LIMITED
    • Yakabe, MasamiIkeuchi, Naoki
    • B81C5/00
    • B81C99/005
    • A probing card and an inspection apparatus which precisely inspect a microstructure having a minute moving section by a simple method are provided. A probing card (6) has a speaker (2), and a circuit substrate (100) which fixes a probe (4), and the speaker (2) is disposed on the circuit substrate (100). The circuit substrate (100) is provided with an aperture region. As the speaker (2) is disposed on that region, a test sound wave is output to the moving section of the microstructure. The probe (4) detects a change in an electrical characteristic caused by the motion of the moving section according to the test sound wave, thereby inspecting the characteristic of the microstructure.
    • 提供了一种通过简单的方法精确检查具有微小移动部分的微结构的探测卡和检查装置。 探测卡(6)具有扬声器(2)和固定探针(4)的电路基板(100),扬声器(2)设置在电路基板(100)上。 电路基板(100)设置有开口区域。 当扬声器(2)设置在该区域上时,测试声波被输出到微结构的移动部分。 探针(4)根据测试声波检测由移动部分的运动引起的电特性的变化,从而检查微结构的特性。
    • 88. 发明公开
    • Fabrication of advanced silicon-based MEMS devices
    • Herstellung von动词desserten Silizium-basierten MEMS-Vorrichtungen
    • EP1452481A2
    • 2004-09-01
    • EP04100440.9
    • 2004-02-05
    • Dalsa Semiconductor Inc.
    • Ouelett, LucAntaki, Robert
    • B81B7/00B81C5/00B81B3/00
    • B81C1/00246B81C1/00666B81C2201/0164B81C2201/0167B81C2201/0169B81C2203/0735
    • A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.
    • 通过在公共衬底上制造包括多个电子部件的电子器件,在公共衬底上制造微电子机械(MEM)器件和电子器件,在电子器件上沉积热稳定的互连层,封装互连的 具有保护层的电子器件,在保护层上形成牺牲层,在牺牲层和保护层中的开孔,以允许MEM器件连接到电子器件,通过沉积和图案化制造MEM器件至少一个 非晶硅层,并且去除牺牲层的至少一部分。 以这种方式,可以在同一基板上的电子器件之后制造MEM器件。