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71. 发明公开

EP1502303A1 HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME 有权
标题翻译：高低压电器元件和制造工艺FOR THEIR
公开(公告)号：EP1502303A1
公开(公告)日：2005-02-02
申请号：EP03726504.8
申请日：2003-04-30
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： FLYNN, Jeffrey, S. , BRANDES, George, R. , VAUDO, Robert, P.
IPC分类号： H01L29/205 , H01L29/778 , H01L29/868 , H01L31/0304 , H01L33/00
CPC分类号： H01L29/2003 , C30B25/02 , C30B29/40 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02576 , H01L21/02664 , H01L29/861 , H01L29/868 , H01L29/872
摘要： The present invention relates to various switching device structures including Schottky diode (10), P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5um) GaN layers (16) of low dopant concentration ( 2KV).

72. 发明授权

EP1063709B1 Method of fabricating a surface coupled InGaAs photodetector 有权
标题翻译：的表面耦合的InGaAs光电检测器的制造方法
公开(公告)号：EP1063709B1
公开(公告)日：2003-07-30
申请号：EP00109952.2
申请日：2000-05-11
申请人： Hughes Electronics Corporation
发明人： Loo, Robert, Y. , Schmitz, Adele, E. , Brown, Julia, J.
IPC分类号： H01L31/18 , H01L31/0304 , H01L31/105
CPC分类号： H01L31/1035 , H01L21/28575 , H01L29/452 , H01L31/02363 , H01L31/1844 , Y02E10/544

73. 发明公开

EP1160882A2 A photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate 审中-公开
标题翻译：光子器件，衬底用于制备光子器件，制造这种衬底的这样的装置和制造方法的方法
公开(公告)号：EP1160882A2
公开(公告)日：2001-12-05
申请号：EP01112409.6
申请日：2001-05-21
申请人： NGK INSULATORS, LTD.
发明人： Shibata, Tomohiko, NGK Insulators, Ltd. , Asai, Keiichiro, NGK Insulators, Ltd. , Nagai, Teruyo, NGK Insulators, Ltd. , Tanaka, Mitsuhiro, NGK Insulators, Ltd.
IPC分类号： H01L33/00 , H01L31/0304
CPC分类号： H01L33/0075 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L31/105 , H01L33/007
摘要： A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c≥0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1 x, y, z≥0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.

74. 发明授权

EP0775371B1 Compounds and infrared devices including stoichiometric semiconductor compounds of indium, thallium, and including at least one of arsenic and phosphorous 失效
标题翻译：包括这样的化合物和红外设备，铟，铊的化学计量化合物半导体和元素砷的至少一种和磷
公开(公告)号：EP0775371B1
公开(公告)日：2000-10-04
申请号：EP95930146.6
申请日：1995-08-11
申请人： SRI INTERNATIONAL
发明人： CHEN, An-Ban , SHER, Arden , VON SCHILFGAARDE, Mark
IPC分类号： H01L31/0304 , H01L31/103 , H01L33/00 , H01L27/146
CPC分类号： H01L33/30 , H01L27/14652 , H01L29/201 , H01L31/03046 , Y02E10/544
摘要： A semiconductor layer of In1-xTlxQ carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As1-yPy and 0

75. 发明公开

EP0954034A3 Light receiving device with quantum-wave interference layers 审中-公开
标题翻译：光接收器，具有量子波干涉层
公开(公告)号：EP0954034A3
公开(公告)日：2000-01-26
申请号：EP99108229.8
申请日：1999-04-27
申请人： Canare Electric Co., Ltd.
发明人： Kano, Hiroyuki
IPC分类号： H01L31/105 , H01L31/11 , H01L31/103 , H01L31/0304 , H01L31/028
CPC分类号： B82Y20/00 , H01L31/035236 , Y10S977/712 , Y10S977/759 , Y10S977/76 , Y10S977/761
摘要： A light-receiving device of a pin junction structure, constituted by a quantum-wave interference layers Q 1 to Q 4 with plural periods of a pair of a first layer W and a second layer B and carrier accumulation layers C 1 to C 3 . The second layer B has wider band gap than the first layer W. Each thicknesses of the first layer W and the second layer B is determined by multiplying by an odd number one fourth of wavelength of quantum-wave of carriers in each of the first layer W and the second layer B existing at the level near the lowest energy level of the second layer B. A δ layer, for sharply varying energy band, is formed at an every interface between the first layer W and the second layer B and has a thickness substantially thinner than the first layer W and the second layer B. As a result, when electrons are excited in the carrier accumulation layers C 1 to C 3 , electrons are propagated through the quantum-wave interference layer from the n-layer to the p-layer as a wave, and electric current flows rapidly.

76. 发明公开

EP0840942A4 GaAs SUBSTRATE WITH COMPOSITIONALLY GRADED AlGaAsSb BUFFER FOR FABRICATION OF HIGH-INDIUM FETS 失效
标题翻译：砷化镓衬底，梯度复合A1GaAsSB BUFFER用于生产场效应晶体管HIGH铟含量
公开(公告)号：EP0840942A4
公开(公告)日：1999-11-03
申请号：EP96941332
申请日：1996-11-08
申请人： LOCKHEED CORP
发明人： GILL DAVID M , UPPAL PARVEZ NASIR
IPC分类号： H01L21/20 , H01L29/10 , H01L21/203 , H01L29/205 , H01L31/0304
CPC分类号： H01L29/1075 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/0251 , H01L21/02543 , H01L21/02546
摘要： Semiconductor devices made in high-indium-content semiconductor material (16) have advantageous properties, but similar substrate materials are hard to handle. A buffer layer (18) makes a lattice-constant transition between a GaAs substrate and a high-indium epitaxially deposited semiconductor such as those lattice-matched to InP. The buffer layer (18) is an epitaxial layer including atoms of two Group III elements, and atoms of two Group V elements, with the ratio of the atoms of at least one group varied along the depth of the buffer layer, in a manner which makes a transition of the lattice constant between that of the substrate and the high-indium semiconductor material. The Group III elements are gallium and aluminum, and the Group V elements are arsenic and antimony.

77. 发明授权

EP0426747B1 AVALANCHE PHOTODIODE STRUCTURE 失效
标题翻译：雪崩光电二极管结构
公开(公告)号：EP0426747B1
公开(公告)日：1996-11-06
申请号：EP89909025.2
申请日：1989-07-27
申请人： BRITISH TELECOMMUNICATIONS public limited company
发明人： DAVIS, Lynn , MACBEAN, Myles Donald Angus
IPC分类号： H01L31/107 , H01L31/0304 , H01L21/223
CPC分类号： H01L31/03042 , H01L21/2233 , H01L31/1075 , Y02E10/544
摘要： An avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source. Suitably masked APD layers are placed in an open flow reactor and heated while bis (cyclopentadienyl) magnesium vapour is flowed over the APD layers. Hydrogen and group V precursors are passed simultaneously with the bis (cyclopentadienyl) magnesium vapour to prevent loss of group V elements from the surface of the device.

78. 发明公开

EP0678923A2 Optoelectronic devices using persistent photoconductivity 失效
标题翻译： Optoelektronische Anordnungen mitbeständigerPhotoleitfähigkeit。
公开(公告)号：EP0678923A2
公开(公告)日：1995-10-25
申请号：EP95105044.2
申请日：1995-04-04
申请人： NEC CORPORATION
发明人： Chadi, James D. , Devlin, George E. , Linke, Richard A. , MacDonald, Robert L. , Thio, Tineke
IPC分类号： H01L31/0296 , H01L31/0304 , H01L31/09 , G02B5/32 , G11C13/00
CPC分类号： H01L31/0352 , G11C7/005 , G11C13/04 , H01L31/0296 , H01L31/0304 , Y02E10/544
摘要： A compound semiconductor that is suitably doped to exhibit the DX effect is irradiated with an optical beam of spatially varying intensity whereby localized regions of persistently higher conductivity and lower refractive index are created in the semiconductor where sufficient intensity of the beam was incident. The persistently higher conductive region can be used to bridge selected gaps in conductive paths on a support member use in memory device and the regions of lower refractive index can be used to providing guiding in a wave guide, to form high resolution gratings, or to form holograms.
摘要翻译：用空间变化强度的光束照射适当地掺杂以显示DX效应的化合物半导体，由此在半导体中产生持续更高导电性和更低折射率的局部区域，其中梁的入射强度足够。可以使用持续更高的导电区域来在存储器件中的支撑构件上的导电路径中桥接选定的间隙，并且可以使用较低折射率的区域来提供波导中的引导，以形成高分辨率光栅，或形成全息图。

79. 发明公开

EP0629005A3 Avalanche photodiode with an improved multiplication layer 失效
标题翻译：法律照相二极管传递者Vermehrungsschicht。
公开(公告)号：EP0629005A3
公开(公告)日：1995-08-30
申请号：EP94108818.9
申请日：1994-06-08
申请人： NEC CORPORATION
发明人： Taguchi, Kenko c/o NEC Corporation
IPC分类号： H01L31/107 , H01L31/0304
CPC分类号： H01L31/1075 , H01L31/0352
摘要： The invention provides an avalanche photodiode multilayer structure comprising an absorption layer for absorbing photons and subsequent generation of electron hole pairs, a field relaxation layer in contact with the absorption layer and a multiplication layer in contact with the field relaxation layer. The multiplication layer comprises a plurality of periods of first and second layers. The first layer has a first graded energy band gap being gradually widen in a direction toward which electrons are accelerated by a predetermined electric field. The second layer has a second graded energy band gap gradually narrowing in the direction. Both a conduction band edge and a valance band edge are free from any discontinuity and sloped down toward the direction through the first and second layers when the first and second layers are applied with the electric field.
摘要翻译：本发明提供了一种雪崩光电二极管多层结构，其包括用于吸收光子和随后产生电子空穴对的吸收层，与吸收层接触的场弛豫层和与场弛豫层接触的倍增层。乘法层包括多个第一和第二层的周期。第一层具有在电子加速预定方向的方向上逐渐变宽的第一渐变能带隙。第二层具有在方向上逐渐变窄的第二梯度能带隙。当第一和第二层被施加电场时，传导带边缘和价带边缘都不会有任何不连续性并且朝向穿过第一和第二层的方向倾斜。

80. 发明公开

EP0470783A1 Photodiode 失效
标题翻译：光电二极管。
公开(公告)号：EP0470783A1
公开(公告)日：1992-02-12
申请号：EP91307142.9
申请日：1991-08-02
申请人： OPTICAL MEASUREMENT TECHNOLOGY DEVELOPMENT CO. LTD.
发明人： Wada, Morio , Seko, Masahito , Sekiguchi, Youichi , Iwaoka, Hideto
IPC分类号： H01L31/0304
CPC分类号： H01L31/03046 , H01L31/105 , H01L31/1844 , Y02E10/544
摘要： This invention provides a photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less dependence on the incident light spectral width by using a material with smaller composition ratio of Ga for the light-absorbing layer to extend the absorption edge toward the longer wavelength side.
摘要翻译：本发明提供了一种在InP衬底上具有GaInAs光吸收层的光电二极管，其可以降低光谱响应性的温度依赖性，并且通过使用具有较小组成比的材料使光功率测量对入射光谱宽度的依赖性降低的Ga用于光吸收层，以将吸收边延伸到较长波长侧。

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