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1. 发明授权

EP1063709B1 Method of fabricating a surface coupled InGaAs photodetector 有权
标题翻译：的表面耦合的InGaAs光电检测器的制造方法
公开(公告)号：EP1063709B1
公开(公告)日：2003-07-30
申请号：EP00109952.2
申请日：2000-05-11
申请人： Hughes Electronics Corporation
发明人： Loo, Robert, Y. , Schmitz, Adele, E. , Brown, Julia, J.
IPC分类号： H01L31/18 , H01L31/0304 , H01L31/105
CPC分类号： H01L31/1035 , H01L21/28575 , H01L29/452 , H01L31/02363 , H01L31/1844 , Y02E10/544

2. 发明公开

EP1063709A3 Method of fabricating a surface coupled InGaAs photodetector 有权
标题翻译：的表面耦合的InGaAs光电检测器的制造方法
公开(公告)号：EP1063709A3
公开(公告)日：2001-09-26
申请号：EP00109952.2
申请日：2000-05-11
申请人： Hughes Electronics Corporation
发明人： Loo, Robert, Y. , Schmitz, Adele, E. , Brown, Julia, J.
IPC分类号： H01L31/18 , H01L31/0304 , H01L31/105
CPC分类号： H01L31/1035 , H01L21/28575 , H01L29/452 , H01L31/02363 , H01L31/1844 , Y02E10/544
摘要： A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate (22), an n+ InP contact layer (24) overlying the InP substrate (22), an undoped InGaAs (26) absorbing layer overlying the n+ InP contact layer (24), and a p+ doped InGaAs layer (28) overlying the undoped InGaAs absorbing layer (26). A gold-beryllium p-contact dot (30) is deposited onto the p+ doped InGaAs layer (28) of the multilayer structure. A mesa structure is etched with a citric acid-based etchant into the multilayer structure. The mesa structure includes the metal p-contact dot (30), the p+ doped InGaAs layer (28), and the undoped InGaAs absorbing layer (26). The n+ InP contact layer (24) is patterned, and a passive metallic n-contact layer (32) is deposited onto the patterned n+ InP contact layer (24). A polyimide insulator layer (34) overlying a portion of the structure is deposited and patterned, so that the polyimide insulator layer (34) does not cover the passive metal p-contact dot (30) and the metallic n-contact layer (32). The patterned organic polymer insulator layer (34) is cured and the device is passivated by heating it in a nitrogen atmosphere. Thick metallic gold contact traces are deposited, with one trace (36) extending to the gold-beryllium p-contact dot and the other trace (38) extending to the metallic n-contact layer.

3. 发明公开

EP1063709A2 Method of fabricating a surface coupled InGaAs photodetector 有权
标题翻译： InGaAs Photodetektor的Herstellungsverfahrenfüreinenoberflächen-gekoppelten
公开(公告)号：EP1063709A2
公开(公告)日：2000-12-27
申请号：EP00109952.2
申请日：2000-05-11
申请人： Hughes Electronics Corporation
发明人： Loo, Robert, Y. , Schmitz, Adele, E. , Brown, Julia, J.
IPC分类号： H01L31/18 , H01L31/0304
CPC分类号： H01L31/1035 , H01L21/28575 , H01L29/452 , H01L31/02363 , H01L31/1844 , Y02E10/544
摘要： A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate (22), an n+ InP contact layer (24) overlying the InP substrate (22), an undoped InGaAs (26) absorbing layer overlying the n+ InP contact layer (24), and a p+ doped InGaAs layer (28) overlying the undoped InGaAs absorbing layer (26). A gold-beryllium p-contact dot (30) is deposited onto the p+ doped InGaAs layer (28) of the multilayer structure. A mesa structure is etched with a citric acid-based etchant into the multilayer structure. The mesa structure includes the metal p-contact dot (30), the p+ doped InGaAs layer (28), and the undoped InGaAs absorbing layer (26). The n+ InP contact layer (24) is patterned, and a passive metallic n-contact layer (32) is deposited onto the patterned n+ InP contact layer (24). A polyimide insulator layer (34) overlying a portion of the structure is deposited and patterned, so that the polyimide insulator layer (34) does not cover the passive metal p-contact dot (30) and the metallic n-contact layer (32). The patterned organic polymer insulator layer (34) is cured and the device is passivated by heating it in a nitrogen atmosphere. Thick metallic gold contact traces are deposited, with one trace (36) extending to the gold-beryllium p-contact dot and the other trace (38) extending to the metallic n-contact layer.
摘要翻译：以具有半绝缘InP衬底（22），覆盖InP衬底（22）的n + InP接触层（24），覆盖n + InP接触层的未掺杂InGaAs（26）吸收层的多层结构制造光电检测器 24）和覆盖未掺杂的InGaAs吸收层（26）的p +掺杂的InGaAs层（28）。金 - 铍p接触点（30）沉积到多层结构的p +掺杂的InGaAs层（28）上。用基于柠檬酸的蚀刻剂蚀刻台面结构到多层结构中。台面结构包括金属p-接触点（30），p +掺杂的InGaAs层（28）和未掺杂的InGaAs吸收层（26）。对n + InP接触层（24）进行构图，并且将无源金属n接触层（32）沉积到图案化的n + InP接触层（24）上。沉积并图案化覆盖在结构的一部分上的聚酰亚胺绝缘体层（34），使得聚酰亚胺绝缘体层（34）不覆盖无源金属p接触点（30）和金属n-接触层（32）。图案化的有机聚合物绝缘体层（34）被固化，并且通过在氮气气氛中加热来钝化该装置。沉积厚金属金接触痕迹，一个迹线（36）延伸到金 - 铍p接触点，另一个迹线延伸到金属n-接触层。

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