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71. 发明授权

EP1661168B1 Herstellungsverfahren für eine Integrierte Schaltungsanordnung mit Kondensator 有权
标题翻译：集成电路装置的制造方法，具有电容器
公开(公告)号：EP1661168B1
公开(公告)日：2014-10-22
申请号：EP04766284.6
申请日：2004-07-21
申请人： Infineon Technologies AG
发明人： GÖBEL, Thomas , HELNEDER, Johann , KÖRNER, Heinrich , MITCHELL, Andrea , SCHWERD, Markus , SECK, Martin , TORWESTEN, Holger
IPC分类号： H01L49/02 , H01L21/316 , H01L23/522 , H01L27/01 , H01L27/08
CPC分类号： H01L28/40 , H01L21/31687 , H01L23/5223 , H01L23/5228 , H01L27/016 , H01L27/0802 , H01L27/0805 , H01L28/20 , H01L2924/0002 , H01L2924/00

72. 发明授权

EP1979949B1 SEMICONDUCTOR STRUCTURE INCLUDING TRENCH CAPACITOR AND TRENCH RESISTOR 有权
标题翻译：抓斗的电容和电阻墓半导体结构
公开(公告)号：EP1979949B1
公开(公告)日：2014-09-24
申请号：EP07710011.3
申请日：2007-01-09
申请人： International Business Machines Corporation
发明人： CHENG, Kangguo , RASSEL, Robert, M.
IPC分类号： H01L29/94 , H01L21/334 , H01L27/06 , H01L29/66 , H01L49/02 , H01L21/02 , H01L27/01
CPC分类号： H01L29/945 , H01L27/016 , H01L27/0682 , H01L28/20 , H01L29/66181

73. 发明公开

EP2738827A1 Mimcap structure in a semiconductor device package 有权转让
标题翻译： MIMCAP-Struktur在einemHalbleiterbauelementegehäuse
公开(公告)号：EP2738827A1
公开(公告)日：2014-06-04
申请号：EP12194922.6
申请日：2012-11-29
申请人： IMEC
发明人： Detalle, Mikael , Beyne, Eric
IPC分类号： H01L49/02 , H01L23/522 , H01L23/64 , H01L23/00 , H01L27/01
CPC分类号： H01L23/5223 , H01L21/4857 , H01L21/768 , H01L23/48 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/5226 , H01L24/97 , H01L27/016 , H01L28/20 , H01L28/40 , H01L28/60 , H01L2924/0002 , H01L2924/15788 , H01L2924/0001 , H01L2924/00
摘要： The invention is related to a semiconductor device package comprising a metal-insulator-metal capacitor. A MIMCAP according to the invention is located between a first and second metallization layer in a stack of metallization layers, in particular copper metallization layers, obtainable by single damascene processing steps as known in the art, said stack supporting semiconductor devices, which are connected through said metallization layers to an external power source. The MIMCAP comprises a bottom plate in the first metallization layer, a first conductive layer on and in electrical contact with said bottom plate, a dielectric layer on and in contact with said first conductive layer, a second conductive layer on and in contact with said dielectric layer, and a top plate in the second metallization layer, on and in electrical contact with the second metal plate. The contacting of the bottom and top plates of the MIMCAP from the first and second metallization layer is thereby established without vias between said plates and said metallization layers. In addition, the first conductive layer of the MIMCAP may extend beyond the surface of the dielectric and the second layer for forming other structures.
摘要翻译：本发明涉及一种包括金属 - 绝缘体 - 金属电容器的半导体器件封装。根据本发明的MIMCAP位于金属化层堆叠中的第一和第二金属化层之间，特别是铜金属化层，可通过本领域已知的单镶嵌加工步骤获得，所述堆叠支撑半导体器件通过所述金属化层连接到外部电源。 MIMCAP包括在第一金属化层中的底板，与所述底板电接触并且与所述底板电接触的第一导电层，在所述第一导电层上并与之接触的介电层，与所述电介质接触并与之接触的第二导电层层和第二金属化层中的与第二金属板电接触的顶板。因此，MIMCAP的底板和顶板与第一金属化层和第二金属化层之间的接触在所述板和所述金属化层之间没有通孔。此外，MIMCAP的第一导电层可以延伸超过电介质的表面和用于形成其它结构的第二层。

74. 发明公开

EP2650907A2 Methods and devices for fabricating and assembling printable semiconductor elements 有权转让
标题翻译：的方法和设备用于制造和装配可印刷的半导体元件
公开(公告)号：EP2650907A2
公开(公告)日：2013-10-16
申请号：EP13003428.3
申请日：2005-06-02
申请人： The Board of Trustees of the University of Illinois
发明人： Nuzzo, Ralph G. , Rogers, John, A. , Menard, Etienne , Lee, Keon Jae , Khang, Dahl-Young , Sun, Yugang , Meitl, Matthew , Zhu, Zhengtao
IPC分类号： H01L21/20 , H01L21/02 , H01L21/30 , H01L21/326 , H01L21/4763 , H01L23/48 , H01L27/01 , H01L29/06 , H01L29/08
CPC分类号： H01L29/76 , B81C2201/0185 , B82Y10/00 , H01L21/02521 , H01L21/02603 , H01L21/02628 , H01L21/308 , H01L21/322 , H01L21/6835 , H01L23/02 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/32 , H01L24/80 , H01L24/83 , H01L24/94 , H01L24/97 , H01L25/0753 , H01L27/1285 , H01L27/1292 , H01L29/04 , H01L29/06 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/78603 , H01L29/78681 , H01L29/78696 , H01L31/0392 , H01L31/03926 , H01L31/1804 , H01L31/1864 , H01L31/1896 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L2221/68368 , H01L2221/68381 , H01L2224/03 , H01L2224/0332 , H01L2224/0345 , H01L2224/03614 , H01L2224/0362 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/05644 , H01L2224/05666 , H01L2224/08225 , H01L2224/2919 , H01L2224/32225 , H01L2224/80 , H01L2224/80006 , H01L2224/80121 , H01L2224/80862 , H01L2224/80895 , H01L2224/83 , H01L2224/83005 , H01L2224/83121 , H01L2224/83192 , H01L2224/83193 , H01L2224/8385 , H01L2224/83862 , H01L2224/9202 , H01L2224/94 , H01L2224/95 , H01L2224/97 , H01L2924/00012 , H01L2924/01032 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15159 , H01L2924/15162 , H01L2924/15788 , H01L2924/1579 , Y02E10/547 , Y02P70/521 , Y10S977/707 , Y10S977/724 , H01L2924/00014 , H01L2924/00
摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.
摘要翻译：本发明提供了用于制造可印刷的半导体元件和组装可印刷的半导体元件到衬底上表面的方法和装置。方法，设备和设备部件本发明的能够产生宽范围的柔性电子和光电子器件和基底包含聚合物材料上的设备的阵列。本发明因此提供了可拉伸的半导体结构，并且能够在拉伸构型良好的性能可拉伸电子器件。

75. 发明公开

EP2650906A2 Methods and devices for fabricating and assembling printable semiconductor elements 有权转让
公开(公告)号：EP2650906A2
公开(公告)日：2013-10-16
申请号：EP13003427.5
申请日：2005-06-02
申请人： The Board of Trustees of the University of Illinois
发明人： Nuzzo, Ralph G. , Rogers, John, A. , Menard, Etienne , Lee, Keon Jae , Khang, Dahl-Young , Sun, Yugang , Meitl, Matthew , Zhu, Zhengtao
IPC分类号： H01L21/20 , H01L21/02 , H01L21/30 , H01L21/326 , H01L21/4763 , H01L23/48 , H01L27/01 , H01L29/06 , H01L29/08
CPC分类号： H01L29/76 , B81C2201/0185 , B82Y10/00 , H01L21/02521 , H01L21/02603 , H01L21/02628 , H01L21/308 , H01L21/322 , H01L21/6835 , H01L23/02 , H01L24/03 , H01L24/05 , H01L24/08 , H01L24/29 , H01L24/32 , H01L24/80 , H01L24/83 , H01L24/94 , H01L24/97 , H01L25/0753 , H01L27/1285 , H01L27/1292 , H01L29/04 , H01L29/06 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/12 , H01L29/78603 , H01L29/78681 , H01L29/78696 , H01L31/0392 , H01L31/03926 , H01L31/1804 , H01L31/1864 , H01L31/1896 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L2221/68368 , H01L2221/68381 , H01L2224/03 , H01L2224/0332 , H01L2224/0345 , H01L2224/03614 , H01L2224/0362 , H01L2224/05073 , H01L2224/05082 , H01L2224/05124 , H01L2224/05144 , H01L2224/05155 , H01L2224/05166 , H01L2224/05552 , H01L2224/05553 , H01L2224/05554 , H01L2224/05555 , H01L2224/05644 , H01L2224/05666 , H01L2224/08225 , H01L2224/2919 , H01L2224/32225 , H01L2224/80 , H01L2224/80006 , H01L2224/80121 , H01L2224/80862 , H01L2224/80895 , H01L2224/83 , H01L2224/83005 , H01L2224/83121 , H01L2224/83192 , H01L2224/83193 , H01L2224/8385 , H01L2224/83862 , H01L2224/9202 , H01L2224/94 , H01L2224/95 , H01L2224/97 , H01L2924/00012 , H01L2924/01032 , H01L2924/0665 , H01L2924/10253 , H01L2924/10329 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/12042 , H01L2924/12043 , H01L2924/12044 , H01L2924/1305 , H01L2924/1306 , H01L2924/13063 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15159 , H01L2924/15162 , H01L2924/15788 , H01L2924/1579 , Y02E10/547 , Y02P70/521 , Y10S977/707 , Y10S977/724 , H01L2924/00014 , H01L2924/00
摘要： The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

76. 发明授权

EP0778619B1 Structure and fabrication method for thin film capacitors 失效
标题翻译：薄膜电容器的结构和制造方法
公开(公告)号：EP0778619B1
公开(公告)日：2012-08-15
申请号：EP96308766.3
申请日：1996-12-04
申请人： GENERAL ELECTRIC COMPANY
发明人： Saia, Richard Joseph , Durocher, Kevin Matthew , Gorowitz, Bernard
IPC分类号： H01L27/01 , H01L23/538 , H01L23/498
CPC分类号： H01L23/5383 , H01L23/49894 , H01L27/016 , H01L2924/0002 , H01L2924/00

77. 发明公开

EP2422358A1 METHOD FOR FABRICATING AN INTEGRATED-PASSIVES DEVICE WITH A MIM CAPACITOR AND A HIGH-ACCURACY RESISTOR ON TOP 审中-公开
标题翻译：方法用于生产集成无源元件与MIM电容和高精密电阻顶端
公开(公告)号：EP2422358A1
公开(公告)日：2012-02-29
申请号：EP10717275.1
申请日：2010-04-14
申请人： NXP B.V.
发明人： ROEST, Aarnoud Laurens , VAN LEUKEN-PETERS, Linda
IPC分类号： H01L21/02 , H01L27/01 , H01L27/02 , H01L27/06
CPC分类号： H01L28/55 , H01L27/016 , H01L27/0251 , H01L27/0688 , H01L28/20 , H01L28/65
摘要： The present invention relates to a method for fabricating an electronic component, comprising fabricating, on a substrate (102) at least one integrated MIM capacitor (114) having a top capacitor electrode (118) and a bottom capacitor electrode (112) at a smaller distance from the substrate than the top capacitor electrode; fabricating an electrically insulating first cover layer (120) on the top capacitor electrode, which first cover layer partly or fully covers the top capacitor electrode and is made of a lead- containing dielectric material; thinning the first cover layer; fabricating an electrically insulating second cover layer (124) on the first cover layer, which second cover layer partly or fully covers the first cover layer and has a dielectric permittivity smaller than that of the first cover layer; and fabricating an electrically conductive resistor layer (126) on the second cover layer, which resistor layer has a defined ohmic resistance.
摘要翻译：基板本发明涉及一种方法，用于在电子部件的制造方法，包括制造，在具有顶电容器电极（118）和以较小的底部电容器电极（112）A（102）至少一个集成MIM电容器（114）从基板比顶部电容电极距离; 在制造电在顶部电容器电极，所述第一覆盖层部分或完全覆盖顶部电容器电极，并且由含有铅的电介质材料的绝缘第一覆盖层（120）; 减薄所述第一覆盖层; 在电绝缘的制造在第一覆盖层上的第二覆盖层（124），该第二覆盖层部分或完全覆盖所述第一覆盖层和具有介电常数比第一覆盖层的小; 以及制造所述第二覆盖层，其中电阻层具有限定的欧姆电阻上的导电电阻器层（126）的。

78. 发明公开

EP2020031A4 HIGH PERFORMANCE 3D FET STRUCTURES, AND METHODS FOR FORMING THE SAME USING PREFERENTIAL CRYSTALLOGRAPHIC ETCHING 失效转让
标题翻译： 3D HIGH-FET结构及其制造优选KRISTALLOGRAFISCHEM蚀刻工艺的依据
公开(公告)号：EP2020031A4
公开(公告)日：2011-11-02
申请号：EP07761242
申请日：2007-04-25
申请人： IBM
发明人： DYER THOMAS W , YANG HAINING S
IPC分类号： H01L27/12 , H01L21/336 , H01L21/8238 , H01L27/01 , H01L27/092 , H01L29/00 , H01L29/04 , H01L29/78 , H01L31/036
CPC分类号： H01L21/823807 , H01L21/823821 , H01L27/0922 , H01L27/1211 , H01L29/04 , H01L29/66795 , H01L29/7853

79. 发明公开

EP2210276A2 PROCEDE DE FABRICATION D'UNE ELECTRODE EN OXYDE DE MOLYBDENE 有权
标题翻译：一种用于生产具有钼氧化物的电极过程
公开(公告)号：EP2210276A2
公开(公告)日：2010-07-28
申请号：EP08842986.5
申请日：2008-10-08
申请人： Saint-Gobain Glass France
发明人： AUVRAY, Stéphane , JANKE, Nikolas
IPC分类号： H01L31/0224 , H01L31/032 , H01L27/01 , C03C17/40
CPC分类号： H01L31/022425 , H01L31/0322 , H01L31/03923 , Y02E10/541
摘要： The present invention relates to a substrate notably designed to enter into the constitution of a solar cell, of which one face, called the inner face, is designed to receive a molybdenum-based conductive element. This substrate is characterized in that the conductive element is formed of several layers based on molybdenum, at least one of these layers being enriched with molybdenum oxide. The present invention also relates to solar cells employing such a substrate and to a method of producing same.

80. 发明公开

EP1749311A4 SEPARATELY STRAINED N-CHANNEL AND P-CHANNEL TRANSISTORS 审中-公开
标题翻译：具有独立紧张的N沟道和P沟道晶体管
公开(公告)号：EP1749311A4
公开(公告)日：2010-01-13
申请号：EP05738546
申请日：2005-04-26
申请人： FREESCALE SEMICONDUCTOR INC
发明人： POZDER SCOTT K , CELIK SALIH M , MIN BYOUNG W , ADAMS VANCE H
IPC分类号： H01L21/30 , H01L21/44 , H01L21/4763 , H01L21/58 , H01L21/822 , H01L21/8238 , H01L27/01 , H01L27/06 , H01L27/12 , H01L29/40
CPC分类号： H01L27/0688 , H01L21/8221 , H01L24/29 , H01L24/83 , H01L27/1203 , H01L29/7842 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01015 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/04941 , H01L2924/07802 , H01L2924/14 , H01L2924/19043

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