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71. 发明公开

EP1219141A4 MULTI-ZONE RESISTANCE HEATER 有权
标题翻译：多个区域加热电阻
公开(公告)号：EP1219141A4
公开(公告)日：2008-10-01
申请号：EP00963563
申请日：2000-09-18
申请人： TOKYO ELECTRON LTD
发明人： JOHNSON WAYNE L , STRANG ERIC J
IPC分类号： H05B3/20 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/02 , H01L21/302 , H01L21/683 , H05B3/02 , H05B3/10 , H05B3/06 , B05B5/00 , B05B5/025 , C23C16/00 , H01T23/00 , H05B3/16 , H05B3/44 , H05B3/68
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46 , H01L21/67103 , H01L21/6831
摘要： A substrate holder for holding a substrate (e.g., a wafer or an LCD panel) during plasma processing. The substrate holder is a stack of processing elements which each perform at least one function. The elements include an electrostatic chuck (102), an He gas distribution system (122), multi-zone heating plates (132), and multi-zone cooling system (152). Each element is designed to match the characteristic of the processing system, e.g., by applying heat based on a heat loss characteristic of the substrate during normal processing. The integrated design allows for precise control of the operating conditions, including, but not limited to, fast heating and fast cooling of a substrate.

72. 发明授权

EP1107291B1 Ceramic heating jig 有权
标题翻译：陶瓷加热器支架
公开(公告)号：EP1107291B1
公开(公告)日：2008-06-25
申请号：EP00310826.3
申请日：2000-12-06
申请人： Shin-Etsu Chemical Company, Ltd.
发明人： Kano, Shoji, c/o Adv. Funct. Mat. Research Center , Ito, Kenji, c/o Adv. Funct. Mat. Research Center , Sato, Akira, c/o Adv. Funct. Mat. Research Center
IPC分类号： H01L21/00 , H05B3/14 , H05B3/26 , C23C16/46
CPC分类号： H01L21/67103

73. 发明公开

EP1895575A1 HEAT TREATMENT APPARATUS 有权
标题翻译： WÄRMEBEHANDLUNGSVORRICHTUNG
公开(公告)号：EP1895575A1
公开(公告)日：2008-03-05
申请号：EP06766598.4
申请日：2006-06-12
申请人： TOKYO ELECTRON LIMITED
发明人： Nakao, Ken c/o Tokyo Electron Limited , Kato, Kazuhiko c/o Tokyo Electron Limited
IPC分类号： H01L21/22 , C23C16/46 , H01L21/205
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/54 , H01L21/324 , H01L21/67098 , H01L21/67103 , H01L21/67109 , Y10T29/4935
摘要： The present invention is a heat processing apparatus comprising: a processing vessel that receives a plurality of objects to be processed in a tier-like manner to subject the objects to be processed to a predetermined heating process; a tubular heater disposed to surround the processing vessel, the tubular heater being capable of heating the objects to be processed; an exhaust heat system for discharging an atmosphere in a space between the heater and the processing vessel; and a cooling unit that blows out a cooling fluid into the space to cool the processing vessel. The heater has a tubular heat insulating member, and a heating resistor arranged on an inner circumference of the heat insulating member. The cooling unit has a plurality of blowing nozzles embedded in the heat insulating member. Each of the blowing nozzles is formed in such a manner that an inlet orifice of the blowing nozzle and an outlet orifice thereof are not linearly aligned to each other.
摘要翻译：本发明是一种热处理装置，包括：处理容器，其以层状方式接收待处理的多个物体，以对被处理物体进行预定的加热处理; 管状加热器，其设置成围绕所述处理容器，所述管状加热器能够加热待处理的物体; 用于排出加热器和处理容器之间的空间中的气氛的排气热系统; 以及将冷却流体吹入空间以冷却处理容器的冷却单元。加热器具有管状绝热构件和布置在绝热构件的内周上的加热电阻器。冷却单元具有嵌入绝热构件中的多个吹出喷嘴。每个喷嘴都是这样形成的：喷嘴的入口孔和出口孔不彼此直线对准。

74. 发明公开

EP1534874A4 CONTINUOUS CHEMICAL VAPOR DEPOSITION PROCESS AND PROCESS FURNACE 审中-公开
标题翻译：连续CVD工艺和处理炉
公开(公告)号：EP1534874A4
公开(公告)日：2008-02-27
申请号：EP03764767
申请日：2003-07-17
申请人： HITCO CARBON COMPOSITES INC
发明人： PRUETT JAMES G , AWASTHI SHRIKANT
IPC分类号： C23C16/26 , C23C16/44 , C23C16/455 , C23C16/46 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45517 , C23C16/26 , C23C16/46 , C23C16/545
摘要： An apparatus and process is provided for continuously depositing solid carbon at atmospheric pressure onto the surfaces and in the porosity of a thin substrate material.

75. 发明公开

EP1781837A2 PLASMA ARC COATING SYSTEM 有权
标题翻译：等离子弧涂层系统
公开(公告)号：EP1781837A2
公开(公告)日：2007-05-09
申请号：EP04796493.7
申请日：2004-10-27
申请人： Exatec, LLC.
发明人： GASWORTH, Steven, M.
IPC分类号： C23C16/513 , C23C16/46 , C23C4/12 , C23C4/02
CPC分类号： C23C16/52 , C23C4/134
摘要： A system for coating a substrate includes a heater that heats the substrate. The heater includes a twodimensional array of a plurality of heat sources which supply heat to the substrate when the substrate is in the presence of the array of heat sources. The heater further includes a controller that controls the operation of each heat source to heat a localized area of the surface of the substrate according to a predetermined temperature profile for the substrate.

76. 发明公开

EP1760170A2 Chemical vapor deposition apparatus 有权
标题翻译：化学气相沉积设备
公开(公告)号：EP1760170A2
公开(公告)日：2007-03-07
申请号：EP06018282.1
申请日：2006-09-01
申请人： JAPAN PIONICS CO., LTD.
发明人： Ohori, Tatsuya c/o ASEC, Inc. , Shiina, Kazushige c/o ASEC, Inc. , Iyechika, Yasushi c/o ASEC, Inc. , Suda, Noboru , Takamatsu, Yukichi c/o Japan Pionics Co., Ltd. , Ishihama, Yoshiyasu c/o Japan Pionics Co., Ltd. , Yoneyama, Takeo c/o Japan Pionics Co., Ltd. , Komiya, Yoshinao c/o Japan Pionics Co., Ltd.
IPC分类号： C23C16/46 , C23C16/458
CPC分类号： C23C16/4581 , C23C16/481
摘要： A chemical vapor deposition apparatus which comprises a susceptor (2) for mounting a substrate (1) thereon, a heater (3) for heating the substrate (1), a feed gas introduction portion (4) and a reaction gas exhaust portion (5), wherein a light transmitting ceramics plate (7) held or reinforced by means of a supporting member (6A,6B) is equipped between the heater (3) and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.
摘要翻译：一种化学气相沉积装置，其包括用于在其上安装基板（1）的基座（2），用于加热基板（1）的加热器（3），原料气体引入部分（4）和反应气体排出部分（5）），其中在加热器（3）和基板的安装位置之间装备有借助于支撑构件（6A，6B）保持或增强的透光陶瓷板（7）。本发明提供一种化学气相沉积装置，即使在为了制造氮化镓而使用具有高温的强腐蚀性气体的化学气相沉积反应的情况下，也能长时间稳定地形成膜而不会对半导体膜的品质产生不利影响化合物半导体等被实现。

77. 发明公开

EP1548809A4 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS 有权
标题翻译： WRMEBEHANDLUNGSVERFAHREN UND WRRMBEHANDLUNGSVORRICHTUNG
公开(公告)号：EP1548809A4
公开(公告)日：2007-02-28
申请号：EP03784632
申请日：2003-08-08
申请人： TOKYO ELECTRON LTD
发明人： SUZUKI KEISUKE , WANG WENLING , YONEKAWA TSUKASA , IKEUCHI TOSHIYUKI , SATO TORU
IPC分类号： H01L21/205 , H01L21/31 , C23C16/46 , C23C16/52 , H01L21/00 , H01L21/316 , H01L21/66
CPC分类号： H01L21/67253 , C23C16/46 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/31662 , H01L21/67109 , H01L21/67248 , H01L22/20 , Y10T436/25
摘要： A heat treatment method having a step wherein plural zones of a heat treatment atmosphere in a reactor are respectively heated by plural heating means and a step wherein a thin film is formed on surfaces of plural substrates by introducing a treatment gas into the reactor. The heat treatment steps include a first heat treatment step wherein plural first substrates, each of which consumes less treatment gas than a product substrate, are used; a first measuring step wherein the thickness of a thin film is measured in each zone; a first setting step wherein a temperature preset value is set in each heating means so that the thickness of each film reaches the target value; a second heat treatment step wherein the preset temperature is used for plural second substrates, each of which consumes more treatment gas than the first substrate; a second measuring step wherein the thickness of a thin film formed on a surface of the second substrate is measured in each zone; a second correcting step wherein the preset temperature set in each heating means is corrected; and a third heat treatment step wherein the heat treatment steps are conducted on plural product substrates using the corrected temperature preset value.
摘要翻译：一种热处理方法，其具有通过多个加热单元分别加热反应器内的多个热处理气氛的区域的工序和在处理气体中导入处理气体而在多个基板的表面形成薄膜的工序。热处理步骤包括第一热处理步骤，其中使用多个消耗比产品衬底更少的处理气体的第一衬底; 第一测量步骤，其中在每个区域中测量薄膜的厚度; 第一设定步骤，其中，在每个加热装置中设定温度预设值，使得每个膜的厚度达到目标值; 第二热处理步骤，其中预设温度用于多个第二基板，每个第二基板消耗比第一基板更多的处理气体; 第二测量步骤，其中在每个区域中测量在第二基板的表面上形成的薄膜的厚度; 第二校正步骤，其中校正在每个加热装置中设定的预设温度; 以及第三热处理步骤，其中使用校正的温度预设值在多个产品衬底上进行热处理步骤。

78. 发明公开

EP1469508A4 BOAT FOR HEAT TREATMENT AND VERTICAL HEAT TREATMENT EQUIPMENT 有权
标题翻译：船热处理及立式热处理机组
公开(公告)号：EP1469508A4
公开(公告)日：2006-12-27
申请号：EP02806406
申请日：2002-09-17
申请人： TOKYO ELECTRON LTD
发明人： IRIE SHINJI , SAKAI HIROFUMI
IPC分类号： C23C16/458 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/31 , H01L21/673 , H01L21/683 , H01L21/68
CPC分类号： H01L21/67309 , C23C16/4583 , H01L21/67098
摘要： A boat for heat treatment characterized by comprising a plurality of columns, a plurality of pawl parts formed in respective columns at a specified interval in the height direction, a plurality of supporting plates each having a plane for mounting an article being treated and fixed, in multi-stage, between the plurality of columns through the pawl part, and grooves and through holes made in the plane for mounting the article. Since grooves and through holes are made in the plane for mounting the article, an air layer is formed between the plane of the supporting plate for mounting the article and the article and thereby the article can be prevented from sticking. Consequently, slip due to sticking of the article can be prevented even at a high-temperature heat treatment.

79. 发明公开

EP1194950A4 PROCESS FOR POLYCRYSTALLINE SILICON FILM GROWTH AND APPARATUS FOR SAME 审中-公开
标题翻译：法多晶硅薄膜该方法的成长和设备
公开(公告)号：EP1194950A4
公开(公告)日：2006-06-21
申请号：EP00942854
申请日：2000-06-15
申请人： MIDWEST RESEARCH INST
发明人： WANG TIHU , CISZEK THEODORE F
IPC分类号： C01B33/02 , H01L21/20 , C01B33/039 , C23C16/24 , C23C16/44 , C23C16/448 , C23C16/458 , C23C16/46 , C23C16/54 , C30B25/02 , H01L21/205 , H01L21/285 , H01L21/36 , H01L31/04
CPC分类号： C30B29/06 , C01B33/039 , C23C16/24 , C23C16/4402 , C23C16/4418 , C23C16/4488 , C23C16/4583 , C23C16/46 , C23C16/54 , C30B25/02 , H01L21/28525
摘要： A process for depositing silicon polycrystalline films on a substrate (109) and apparatus to carry out the process. The chemical species used to effect coating or crystal growth are confined to a region in the reactor (113) in which gravity and thermal gradient characterize the process. The apparatus design permits continuous coating processes.

80. 发明公开

EP1670044A1 PRODUCTION METHOD FOR SILICON EPITAXIAL WAFER, AND SILICON EPITAXIAL WAFER 审中-公开
标题翻译： HERSTELLUNGSVERFAHRENFÜREINEN SILIZIUM-EPITAXIALWAFER UND SILIZIUM-EPITAXIALWAFER
公开(公告)号：EP1670044A1
公开(公告)日：2006-06-14
申请号：EP04788176.8
申请日：2004-09-27
申请人： Shin-Etsu Handotai Co., Ltd
发明人： Kanaya, Koichi,c/o Shin-Etsu Handotai Co., Ltd. , Nishizawa, Tsuyoshi,c/o Shin-Etsu Handotai Co. Ltd
IPC分类号： H01L21/205 , C23C16/46
CPC分类号： C30B25/02 , C30B25/12 , C30B29/06
摘要： In a vapor phase growth apparatus including a reaction chamber, a susceptor, a lift pin, an upper heating device, and a lower heating device, a heating ratio between the upper heating ratio and the lower heating ratio is adjusted.
摘要翻译：在包括反应室，基座，升降销，上加热装置和下加热装置的气相生长装置中，调节上加热比和下加热比之间的加热比。

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