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1. 发明公开

EP1548809A4 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS 有权
标题翻译： WRMEBEHANDLUNGSVERFAHREN UND WRRMBEHANDLUNGSVORRICHTUNG
公开(公告)号：EP1548809A4
公开(公告)日：2007-02-28
申请号：EP03784632
申请日：2003-08-08
申请人： TOKYO ELECTRON LTD
发明人： SUZUKI KEISUKE , WANG WENLING , YONEKAWA TSUKASA , IKEUCHI TOSHIYUKI , SATO TORU
IPC分类号： H01L21/205 , H01L21/31 , C23C16/46 , C23C16/52 , H01L21/00 , H01L21/316 , H01L21/66
CPC分类号： H01L21/67253 , C23C16/46 , C23C16/52 , H01L21/0217 , H01L21/02211 , H01L21/02238 , H01L21/02255 , H01L21/02271 , H01L21/31662 , H01L21/67109 , H01L21/67248 , H01L22/20 , Y10T436/25
摘要： A heat treatment method having a step wherein plural zones of a heat treatment atmosphere in a reactor are respectively heated by plural heating means and a step wherein a thin film is formed on surfaces of plural substrates by introducing a treatment gas into the reactor. The heat treatment steps include a first heat treatment step wherein plural first substrates, each of which consumes less treatment gas than a product substrate, are used; a first measuring step wherein the thickness of a thin film is measured in each zone; a first setting step wherein a temperature preset value is set in each heating means so that the thickness of each film reaches the target value; a second heat treatment step wherein the preset temperature is used for plural second substrates, each of which consumes more treatment gas than the first substrate; a second measuring step wherein the thickness of a thin film formed on a surface of the second substrate is measured in each zone; a second correcting step wherein the preset temperature set in each heating means is corrected; and a third heat treatment step wherein the heat treatment steps are conducted on plural product substrates using the corrected temperature preset value.
摘要翻译：一种热处理方法，其具有通过多个加热单元分别加热反应器内的多个热处理气氛的区域的工序和在处理气体中导入处理气体而在多个基板的表面形成薄膜的工序。热处理步骤包括第一热处理步骤，其中使用多个消耗比产品衬底更少的处理气体的第一衬底; 第一测量步骤，其中在每个区域中测量薄膜的厚度; 第一设定步骤，其中，在每个加热装置中设定温度预设值，使得每个膜的厚度达到目标值; 第二热处理步骤，其中预设温度用于多个第二基板，每个第二基板消耗比第一基板更多的处理气体; 第二测量步骤，其中在每个区域中测量在第二基板的表面上形成的薄膜的厚度; 第二校正步骤，其中校正在每个加热装置中设定的预设温度; 以及第三热处理步骤，其中使用校正的温度预设值在多个产品衬底上进行热处理步骤。

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