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71. 发明公开

EP3945677A1 SWITCH CIRCUITS WITH PARALLEL TRANSISTOR STACKS AND METHODS OF THEIR OPERATION 审中-公开
公开(公告)号：EP3945677A1
公开(公告)日：2022-02-02
申请号：EP21179887.1
申请日：2021-06-16
申请人： NXP USA, Inc.
发明人： Malladi, Venkata Naga Koushik
IPC分类号： H03K17/041 , H01P1/15 , H03K17/10 , H03K17/12 , H03K17/693 , H04B1/44 , H03K17/687
摘要： A switch circuit includes first and second transistor stacks coupled in parallel between first and second ports. The first transistor stack includes a first plurality of transistors coupled in series between the first and second ports to provide a first variably-conductive path between the first and second ports. Each transistor of the first plurality of transistors has a gate terminal coupled to a first control terminal. The second transistor stack includes a second plurality of transistors coupled in series between the first and second ports to provide a second variably-conductive path between the first and second ports. Each transistor of the second plurality of transistors has a gate terminal coupled to a second control terminal. When implemented in a transceiver, first and second drivers are configured to simultaneously configure the first and second variably-conductive paths in a low-impedance state.

72. 发明授权

EP2936682B1 DISPOSITIF DE COMMUTATION DE SIGNAUX HYPERFREQUENCES NOTAMMENT DE DIMENSIONS NANOMETRIQUES, ET COMPOSANT ELECTRONIQUE INCORPORANT UN TEL DISPOSITIF 有权转让
公开(公告)号：EP2936682B1
公开(公告)日：2021-01-20
申请号：EP13827008.7
申请日：2013-12-20
发明人： TRIPON-CANSELIET, Charlotte , CHAZELAS, Jean , DECOSTER, Didier
IPC分类号： H03K17/94 , H01P1/15

73. 发明公开

EP3764455A1 METHOD FOR CONTROLLING TRANSMISSION OF ELECTROMAGNETIC WAVE ON BASIS OF LIGHT, AND DEVICE THEREFOR 有权
公开(公告)号：EP3764455A1
公开(公告)日：2021-01-13
申请号：EP19806569.0
申请日：2019-05-21
申请人： Samsung Electronics Co., Ltd.
发明人： MAKURIN, Mikhail Nikolaevich , LUKYANOV, Anton Sergeevich , SHEPELEVA, Elena Aleksandrovna , NIKISHOV, Artem Yurievich , VILENSKIY, Artem Rudolfovich
IPC分类号： H01P1/15
摘要： A device for controlling transmission of electromagnetic waves according to the present disclosure includes: a conductor line which is positioned on a signal layer and through which electromagnetic waves received via an input terminal travel; a ground layer electrically separated from the signal layer through a dielectric layer and electrically grounded; a shunt via including a first end and a second end and connected to the conductor line through the first end; and a photoconductive semiconductor connected between the second end of the shunt via and the ground layer and having a dielectric state or a conducting state, based on an input of an optical signal, wherein the conductor line is electrically connected to the ground layer via the shunt via and the photoconductive semiconductor in the conducting state, thereby causing reflection of electromagnetic waves from the shunt via.

74. 发明公开

EP3514959A1 SELF-ADJUSTABLE RF SWITCH CELL 审中-公开
公开(公告)号：EP3514959A1
公开(公告)日：2019-07-24
申请号：EP19153127.6
申请日：2019-01-22
申请人： Infineon Technologies AG
发明人： BAKALSKI, Winfried
IPC分类号： H03K17/10 , H03K17/12 , H03K17/0412 , H01P1/15 , H03K17/081 , H04B1/44
摘要： An RF switch includes two or more coupled RF switch cells, each RF switch cell including a transistor having a first source/drain node, a second source/drain node, and a gate node, a first varactor is coupled between the first source/drain node and the gate node, and a second varactor is coupled between the second source/drain node and the gate node.

75. 发明授权

EP2387151B1 Millimeter-wave switches and attenuators 有权
标题翻译：毫米波开关和衰减器
公开(公告)号：EP2387151B1
公开(公告)日：2017-10-11
申请号：EP10005689.4
申请日：2010-06-01
申请人： MediaTek Singapore Pte. Ltd. , International Business Machines Corporation
发明人： Nicolson, Sean Timothy , Reynolds, Scott Kevin
IPC分类号： H03H7/25 , H04B1/40 , H01P1/15
CPC分类号： H03H7/25 , H01P1/15 , H04B1/40

76. 发明公开

EP3219011A1 A CONTROL UNIT FOR PROVIDING BIAS TO A RF SWITCH 审中-公开
标题翻译：用于向RF开关提供偏置的控制单元
公开(公告)号：EP3219011A1
公开(公告)日：2017-09-20
申请号：EP15751156.9
申请日：2015-01-12
申请人： Limited Liability Company "Siemens"
发明人： IVANOV, Evgeny Valeryevich
IPC分类号： H03K17/06 , H01P1/15 , H03K17/74 , H03K17/691
CPC分类号： H02M1/08 , H02M3/335 , H02M2001/0048 , H03K17/06 , H03K17/691 , H03K17/74 , H03K2017/066
摘要： A control unit for providing a reverse or forward bias to a RF switch module, wherein the control unit includes an internal switch, a reverse bias source to provide the reverse bias signal to the internal switch, a forward bias source to provide the forward bias signal to the internal switch, and a local control module, where the output of the internal switch is configured to be connected to the RF switch module to transmit either the reverse bias signal or the forward bias signal to the RF switch module, where the internal switch controls, via a switching action, transmission of the reverse bias signal and the forward bias signal towards the RF switch module, and where the local control module controls the switching action of the internal switch and controls provision of the reverse bias signal at the first output of the reverse bias source.
摘要翻译：介绍了用于向RF开关模块提供反向或正向偏压的控制单元。控制单元包括内部开关，向内部开关提供反向偏置信号的反向偏置源，向内部开关提供正向偏置信号的正向偏置源，以及本地控制模块。内部开关的输出被配置为连接到RF开关模块，以将反向偏置信号或正向偏置信号发送到RF开关模块。内部开关通过开关动作控制向RF开关模块发送反向偏置信号和正向偏置信号。本地控制模块控制内部开关的切换动作并控制在反向偏置源的第一输出处提供反向偏置信号。

77. 发明授权

EP1876722B1 HIGH FREQUENCY SWITCHING MODULE AND METHOD FOR ADJUSTING FREQUENCY CHARACTERISTIC OF HIGH FREQUENCY CIRCUIT 有权
标题翻译：高频开关模块和方法调整高频电路的频率特性
公开(公告)号：EP1876722B1
公开(公告)日：2016-08-24
申请号：EP06732386.5
申请日：2006-04-26
申请人： MURATA MANUFACTURING CO., LTD.
发明人： UEJIMA, Takanori, MURATA MANUFACTURING CO. LTD , WATANABE, Shinya, MURATA MANUFACTURING CO. LTD , NAKAYAMA, Naoki, MURATA MANUFACTURING CO. LTD
IPC分类号： H01P1/203 , H04B1/48 , H01P1/15 , H01P1/20
CPC分类号： H04B1/48 , H01P1/15 , H01P1/20 , H01P1/203

78. 发明公开

EP2965380A1 OPTIMIZING ISOLATION AND INSERTION LOSS OF A RADIO FREQUENCY SINGLE-POLE-DOUBLE-THROW SWITCH 审中-公开
标题翻译： RF开关的分离的优化和单端的插入损耗
公开(公告)号：EP2965380A1
公开(公告)日：2016-01-13
申请号：EP14712086.9
申请日：2014-02-28
申请人： Microchip Technology Incorporated
发明人： KOK, Yon-lin
IPC分类号： H01P1/15 , H01P1/203 , H01P1/213 , H03H7/46
CPC分类号： H04B1/44 , H01P1/15 , H01P1/213 , H03H7/465
摘要： A single pole double throw (SPDT) switch (200) is fabricated on an integrated circuit (IC) and may comprise two radio frequency (RF) switching devices (112,114) each having a separate DC blocking capacitor coupled between respective RF switching devices and a common node (102). A DC connection is provided between the two RF switching devices with a thin electrically conductive line (224). This thin electrically conductive line provides for increased isolation between the two RF switching devices and decreased insertion loss. The increased isolation and/or decreased insertion loss is accomplished by tuning the thin electrically conductive line through the characteristic impedance of the line when impedance matching conditions are met. Undesired circuit resonance(s) in the SPDT switch may be substantially reduced by using two or more thin electrically conductive lines that further reduce the thin electrically line(s) inductance.

79. 发明公开

EP2374184A4 MULTIPLE POLE MULTIPLE THROW SWITCH DEVICE BASED ON COMPOSITE RIGHT AND LEFT HANDED METAMATERIAL STRUCTURES 审中-公开
标题翻译：对复合右手和左手超材料基于组SWITCH
公开(公告)号：EP2374184A4
公开(公告)日：2014-07-02
申请号：EP09836910
申请日：2009-12-16
申请人： HOLLINWORTH FUND L L C
发明人： DUPUY ALEXANDRE , PENEV VLADIMIR , PATHAK VANEET , GUMMALLA AJAY
IPC分类号： H01P5/12 , H01P1/15 , H01P1/203 , H01P1/213
CPC分类号： H01P1/20363 , H01P1/15 , H01P1/2039 , H01P1/2135 , H01P5/12

80. 发明公开

EP2735101A1 RF DEVICE WITH A TRANSMIT/RECEIVE SWITCH CIRCUIT 有权转让
标题翻译：与发送/接收电路的高频元件
公开(公告)号：EP2735101A1
公开(公告)日：2014-05-28
申请号：EP12748567.0
申请日：2012-07-20
申请人： Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO
发明人： VAN WANUM, Maurice
IPC分类号： H04B1/10 , H04B1/48 , H01P1/15 , H03K17/693
CPC分类号： H03K17/002 , H03K17/08142 , H03K17/693 , H04B1/109 , H04B1/48
摘要： A transmit/receive switch circuit has a comprises a controllable transmit section and a controllable receive section, having an output and an input coupled to an RF transmit/receive terminal respectively. The transmit section comprises a first transistor having a main current channel coupled between an RF transmit signal input and the RF transmit/receive terminal. The receive section comprises a first transistor having a main current channel coupled between the RF transmit/receive terminal and a RF receive signal output and a second transistor having a main current channel coupled between the RF receive signal output and ground. A signal that is derived from an RF input signal at the RF transmit/receive terminal is rectified. The rectified signal is used to control a control electrode of the second transistor of the receive section to make this transistor increasingly conductive with increasing RF signal amplitude. The rectified signal may also be used to control a control electrode of the first transistor of the transmit section in this way. Thus, the transmit/receive switch circuit is made to perform a limiting function.

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