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61. 发明公开

EP3327176A1 COMPOSITION FOR ETCHING TREATMENT OF RESIN MATERIAL 有权
公开(公告)号：EP3327176A1
公开(公告)日：2018-05-30
申请号：EP17208657.1
申请日：2014-10-16
申请人： Okuno Chemical Industries Co., Ltd.
发明人： NAGAMINE, Shingo , KITA, Koji , OTSUKA, Kuniaki
IPC分类号： C23C18/24 , C09K13/04 , C23C18/16 , C08J7/14 , C25B1/28 , C23F1/14 , C23F3/02 , C23C18/20 , C23C18/30 , H01L21/02 , H01L21/306
CPC分类号： C09K13/00 , C08J7/14 , C09K13/04 , C23C18/1641 , C23C18/1653 , C23C18/2086 , C23C18/24 , C23C18/285 , C23C18/30 , C23C18/32 , C23C18/38 , C23F1/14 , C23F3/02 , C25B1/28 , C25D5/14 , H01L21/02052 , H01L21/30604
摘要： The present invention relates to a composition for etching treatment of a resin material, the composition comprising an aqueous solution having a permanganate ion concentration of 0.2 mmol/L or more and a total acid concentration of 10 mol/L or more with an upper limit of 15 mol/L, and the aqueous solution satisfying the following condition (2):
(2) setting the divalent manganese ion molar concentration to 15 or more times higher than the permanganate ion molar concentration, and
wherein the aqueous solution optionally further satisfies at least one of the following conditions (1) and (3):
(1) containing an organic sulfonic acid in an amount of 1.5 mol/L or more, and
(3) setting the addition amount of an anhydrous magnesium salt to 0.1 to 1 mol/L.

62. 发明公开

EP3168191A1 METHOD FOR PRODUCING PURIFIED ACTIVE SILICIC ACID SOLUTION AND SILICA SOL 有权转让
标题翻译：生产纯化活性硅酸溶液和硅溶胶的方法
公开(公告)号：EP3168191A1
公开(公告)日：2017-05-17
申请号：EP16204020.8
申请日：2012-09-14
申请人： Nissan Chemical Industries, Ltd.
发明人： Ema, Kiyomi , Takakuma, Noriyuki , Nishimura, Tohru , Kawashita, Naoki , Yamaguchi, Kouji
IPC分类号： C01B33/141 , C01B33/143 , C01B33/148 , C09K3/14 , C09K13/04
CPC分类号： C09K3/1463 , C01B33/1412 , C01B33/1435 , C01B33/1485 , C09K13/04
摘要： There is provided a method for producing an active silicic acid solution in which the existing amount of foreign matters as plate-like fine particles is reduced and a method for producing a silica sol in which such foreign matters are reduced. A method for producing an active silicic acid solution fulfilling the following condition: (1) the existing amount of plate-like fine particles having a length of one side of 0.2 to 4.0 µm and a thickness of 1 to 100 nm is measured to be 0% to 30% in accordance with measuring method A, the method characterized by including the steps of: preparing an active silicic acid solution by subjecting an alkali silicate aqueous solution having a silica concentration of 0.5% by mass to 10.0% by mass to cation-exchange to remove alkaline components; and filtering the active silicic acid solution through a filter whose removal rate of particles having a primary particle size of 1.0 µm is 50% or more, and whose filtering rate is 13 L/min to 400 L/min per 1 m 2 of the filtration area of the used filter.
摘要翻译：本发明提供一种活性硅酸溶液的制造方法，该活性硅酸溶液中减少了作为板状微粒的异物的存在量，并且提供了减少这种异物的二氧化硅溶胶的制造方法。满足以下条件的活性硅酸溶液的制造方法：（1）将一边的长度为0.2〜4.0μm，厚度为1〜100nm的板状微粒的存在量设为0 所述方法的特征在于包括以下步骤：通过将具有二氧化硅浓度为0.5质量％至10.0质量％的碱金属硅酸盐水溶液进行阳离子聚合来制备活性硅酸溶液，交换去除碱性成分; 并且通过过滤器对活性硅酸溶液进行过滤，所述过滤器的一次粒径为1.0μm的颗粒的去除率为50％以上，过滤速度为13L / min〜400L / min / 的过滤器。

63. 发明公开

EP3004007A1 PROCÉDÉ DE TRAITEMENT D'UNE SURFACE ET DISPOSITIF MIS EN UVRE 有权
标题翻译： VERFAHREN ZUM BEHANDELN EINEROBERFLÄCHEUND APARATFÜRDIESES VERFAHREN
公开(公告)号：EP3004007A1
公开(公告)日：2016-04-13
申请号：EP14729639.6
申请日：2014-06-06
申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives
发明人： PILON, Fabien , BELLEVILLE, Philippe , LAMBERT, Sébastien , RONDEAU, Olivier , THOMAS, Sandrine
IPC分类号： C03C15/02 , B08B13/00 , C03C23/00 , C09K13/02 , C09K13/04 , C23F1/16
CPC分类号： C03C15/02 , C03C23/0075 , C09K13/02 , C09K13/04 , C09K13/08 , C23F1/08 , C23F1/20 , C23F1/36
摘要： The invention relates to a method for treating a surface of an object, comprising steps consisting in bringing the surface to be treated in contact with a diffusion intermediate, then maintaining said surface to be treated in contact with said diffusion intermediate without any relative movement in relation to each other, said diffusion intermediate being impregnated with a corrosive solution before or during the contact being maintained. The invention also relates to a device implemented during such a method.
摘要翻译：本发明涉及一种用于处理物体表面的方法，该方法包括以下步骤：将待处理的表面与扩散中间体接触，然后保持待处理的表面与所述扩散中间体接触，而不会相对移动所述扩散中间体在接触之前或在所述接触期间用腐蚀性溶液浸渍。本发明还涉及在这种方法期间实现的装置。

64. 发明公开

EP1974370A4 MICROETCHING COMPOSITION AND METHOD OF USING THE SAME 有权
标题翻译：显微组合物及其使用方法
公开(公告)号：EP1974370A4
公开(公告)日：2015-11-04
申请号：EP06814816
申请日：2006-09-15
申请人： MACDERMID INC
发明人： CASTALDI STEVEN A , FENG KESHENG , KAPADIA NILESH
IPC分类号： H01L21/306 , C09K13/04 , C09K13/06 , C23F1/16 , C23F1/44 , H01L21/3213
CPC分类号： C23F1/18 , C23F1/16 , H01L21/32134 , H05K3/383 , H05K2203/122
摘要： The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic solvents, a source of molybdenum ions, amines, polyamines, and acrylamides may also be included in the composition of the invention. The present invention is also directed to a method of microetching copper or copper alloy surfaces to increase the adhesion of the copper surface to a polymeric material, comprising the steps of contacting a copper or copper alloy surface with the composition of the invention, and thereafter bonding the polymeric material to the copper or copper alloy surface.

65. 发明公开

EP2596081A1 CROSS-LINKING AND MULTI-PHASE ETCH PASTES FOR HIGH RESOLUTION FEATURE PATTERNING 审中-公开
标题翻译：网络和MEHRFACHÄTZUNGSPASTEN高分辨率特征结构
公开(公告)号：EP2596081A1
公开(公告)日：2013-05-29
申请号：EP11730903.9
申请日：2011-05-17
申请人： Merck Patent GmbH , Nano Terra Inc.
发明人： GILLIES, Jennifer , KUEGLER, Ralf , STERN, Eric , MAYERS, Brian , REUST, Patrick , HUNTING, Lindsay
IPC分类号： C09K13/04 , C09K13/00
CPC分类号： C09K13/06 , B82Y30/00 , C09K13/00 , C09K13/04 , Y10S977/773
摘要： The present invention relates to a novel etching media in the form of printable, homogeneous etching pastes with non-Newtonian flow properties for the improved etching of inorganic oxides and silicon surfaces and which allow to prepare smaller features.

66. 发明公开

EP1633557A4 COMPOSITIONS AND METHODS FOR DARKENING AND IMPARTING CORROSION-RESISTANT PROPERTIES TO ZINC OR OTHER ACTIVE METALS 审中-公开
标题翻译：组合物和方法来加深和腐蚀性能贷款对锌或其它活性金属
公开(公告)号：EP1633557A4
公开(公告)日：2010-08-25
申请号：EP04754397
申请日：2004-06-04
申请人： METAL COATINGS INT INC
发明人： PEARCE MICHELLE R , STRAKA BRIAN G , GUHDE DONALD J , DORSETT TERRY E
IPC分类号： B32B15/04 , C09K13/04 , C23C22/40 , C23C22/68 , C23C22/82 , C23F11/00
CPC分类号： C23C22/68 , C23C22/40
摘要： Methods and compositions that serve to both darken a zinc or other active! metal surface and impart corrosion-resistant properties thereto, are disclosed. The compositions include an aqueous solution containing about 0.1 percent to about 5 percent ammonium chloride and about 0.1 percent to about 5 percent ammonium molybdate. The compositions utilize particular ratios of concentrations of ammonium chloride and ammonium molybdate.

67. 发明公开

EP2025708A1 Chromfreie Beize für Kunststoffoberflächen 有权
标题翻译： Chromfreie BeizefürKunststoffoberflächen
公开(公告)号：EP2025708A1
公开(公告)日：2009-02-18
申请号：EP07015812.6
申请日：2007-08-10
申请人： Enthone Inc.
发明人： Schildmann, Mark Peter , Werner, Christoph, Dr. , Prinz, Ulrich, Dr.
IPC分类号： C08J7/14 , C09B65/00 , C09K13/04 , C23C18/24
CPC分类号： C09K13/04 , B44C1/227 , C08J7/14 , C08J2355/02 , C23C18/24
摘要： Die vorliegende Erfindung betrifft eine Beizlösung sowie ein Verfahren zum Beizen von Kunststoffoberflächen. Insbesondere betrifft die vorliegende Erfindung eine Beizlösung sowie ein Beizverfahren zum Beizen von ABS-Kunststoffoberflächen oder ABS-Blend-Kunststoffoberflächen vor einer anschließenden Metallisierung mittels einer Beizlösung zur vorbereitenden Oberflächenbehandlung von Kunststoffoberflächen, welche Mangan(VII)-lonen sowie eine anorganische Säure, welche dadurch gekennzeichnet ist, dass die Beizlösung im Wesentlichen frei von Alkali- und Erdalkali-lonen ist. Die in der erfindungsgemäßen Beizlösung eingesetzten Mangan (VII)-lonen werden durch anodische Oxidation aus einer geeigneten Mangan(II)-haltigen Lösung gebildet.
摘要翻译：酸洗溶液包含Mn（VII）离子源; 和无机酸，其中酸洗液不含铬（VI）离子，碱离子和碱土离子。包括用于酸洗丙烯腈丁二烯苯乙烯塑料表面的独立权利要求，其涉及使酸洗的塑料表面与包含Mn（VII）离子的酸性处理溶液接触并且不含碱金属和碱土金属离子。

68. 发明公开

EP1974370A2 MICROETCHING COMPOSITION AND METHOD OF USING THE SAME 有权
标题翻译： MIKROÄTZUNGSZUSAMMENSETZUNG及其使用方法
公开(公告)号：EP1974370A2
公开(公告)日：2008-10-01
申请号：EP06814816.2
申请日：2006-09-15
申请人： MacDermid, Incorporated
发明人： CASTALDI, Steven, A. , FENG, Kesheng , KAPADIA, Nilesh
IPC分类号： H01L21/306 , C09K13/06 , C09K13/04
摘要： The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic solvents, a source of molybdenum ions, amines, polyamines, and acrylamides may also be included in the composition of the invention. The present invention is also directed to a method of microetching copper or copper alloy surfaces to increase the adhesion of the copper surface to a polymeric material, comprising the steps of contacting a copper or copper alloy surface with the composition of the invention, and thereafter bonding the polymeric material to the copper or copper alloy surface.

69. 发明授权

EP1572833B1 SUPERCRITICAL CARBON DIOXIDE/CHEMICAL FORMULATION FOR ASHED AND UNASHED ALUMINUM POST-ETCH RESIDUE REMOVAL 失效
标题翻译： AUFÜBERKRITISCHEM二氧化碳基础的公式对铝的除去，IF灰化搁置之后通过蚀刻
公开(公告)号：EP1572833B1
公开(公告)日：2008-08-20
申请号：EP03779251.2
申请日：2003-10-27
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： KORZENSKI, Michael, B. , GHENCIU, Eliodor, G. , XU, Chongying , BAUM, Thomas, H.
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , H01L21/302 , C03C15/00 , C11D7/08 , C11D7/10 , C11D7/32 , C11D7/50 , C11D11/00
CPC分类号： H01L21/02071 , C11D7/08 , C11D7/10 , C11D7/261 , C11D7/264 , C11D7/265 , C11D7/28 , C11D7/32 , C11D7/3245 , C11D7/50 , C11D7/5022 , C11D11/0047 , C23G5/00 , H01L21/02052 , H01L21/31133 , H01L21/32138
摘要： A post-etch residue cleaning composition for cleaning ashed or unashed aluminum/SiN/Si post-etch residue from small dimensions on semiconductor substrates. The cleaning composition contains supercritical CO2 (SCCO2), alcohol, fluoride source, an aluminum ion complexing agent and, optionally, corrosion inhibitor. Such cleaning composition overcomes the intrinsic deficiency of SCCO2 as a cleaning reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that are present in the post-etch residue and that must be removed from the semiconductor substrate for efficient cleaning. The cleaning composition enables damage-free, residue-free cleaning of substrates having ashed or unashed aluminum/SiN/Si post-etch residue thereon.

70. 发明授权

EP1086191B1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES AFTER POLISHING OF COPPER FILM 有权
标题翻译：方法和设备清洁半导体衬底后的波兰DESKUPFERFILMS
公开(公告)号：EP1086191B1
公开(公告)日：2008-05-28
申请号：EP99907149.1
申请日：1999-02-18
申请人： LAM RESEARCH CORPORATION
发明人： LI, Xu , ZHAO, Yuexing , HYMES, Diane, J. , DELARIOS, John, M.
IPC分类号： C09K13/00 , C09K13/06 , C09K13/08 , C09K13/02 , C09K13/04 , H01L21/321 , H01L21/306 , C11D1/00
CPC分类号： H01L21/02074 , C09K13/00 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination. The figure illustrates a flowchart of one embodiment of the process of the present invention wherein (310) is the step of polishing a copper layer on a semiconductor substrate followed by (320) the step of placing the polished semiconductor substrate in a scrubber followed by (330) the step of scrubbing the polished semiconductor substrate and ending with (340) the step of applying an acidic cleaning solution to the polished semiconductor substrate during scrubbing.

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