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1. 发明授权

EP3997193B1 COMPOSITION, ITS USE AND A PROCESS FOR SELECTIVELY ETCHING SILICON-GERMANIUM MATERIAL 有权
公开(公告)号：EP3997193B1
公开(公告)日：2023-05-03
申请号：EP20733993.8
申请日：2020-06-19
发明人： LOPEZ VILLANUEVA, Francisco Javier , BURK, Yeni , LOEFFLER, Daniel , MUELLER, Jan Ole , BRILL, Marcel , WILKE, Patrick , LINDNER, Jean-Pierre Berkan , BOYKO, Volodymyr
IPC分类号： C09K13/00 , C09K13/08 , H01L21/306

2. 发明公开

EP3978585A1 AQUEOUS SOLUTION FOR ETCHING SILICON OXIDE 审中-公开
公开(公告)号：EP3978585A1
公开(公告)日：2022-04-06
申请号：EP20199275.7
申请日：2020-09-30
申请人： Imec VZW
发明人： VEREECKE, Guy
IPC分类号： C09K13/08
摘要： An aqueous solution comprising the anion F- in a concentration of from 2 to 4 mol/l and a cation of formula RR'R"R'''N + in a concentration of from 1.5 to 2 mol/l, wherein each of R, R', R", and R'" are independently selected from hydrogen and C 1-5 alkyl chains with the proviso that the total number of carbon atoms in R, R', R", and R'" combined equals from 8 to 16.

3. 发明授权

EP2922086B1 Composition, system, and process for TiNxOy removal 失效转让
公开(公告)号：EP2922086B1
公开(公告)日：2019-05-08
申请号：EP14198123.3
申请日：2014-12-16
申请人： Versum Materials US, LLC
发明人： Casteel Jr., William Jack , Inaoka, Seiji , Rao, Madhukar Bhaskara , Ross, Brenda Faye , Lee, Yi-Chia , Liu, Wen Dar , Chen, Tianniu
IPC分类号： H01L21/3213 , H01L21/02 , C09K13/06 , C09K13/08 , H01L21/311

4. 发明授权

EP2434536B1 ETCHING METHOD 有权
公开(公告)号：EP2434536B1
公开(公告)日：2019-03-13
申请号：EP09844917.6
申请日：2009-05-21
申请人： Stella Chemifa Corporation
发明人： MIYASHITA,Masayuki , KUJIME,Takanobu , NII,Keiichi
IPC分类号： H01L21/311 , C09K13/08

5. 发明授权

EP2668248B1 USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE-SPACE DIMENSIONS BELOW 50NM 有权
公开(公告)号：EP2668248B1
公开(公告)日：2019-02-27
申请号：EP12739044.1
申请日：2012-01-17
申请人： BASF SE
发明人： KLIPP, Andreas , MAYER, Dieter
IPC分类号： C09K13/08 , G03F7/32 , G03F7/20 , G03F7/004 , C11D11/00 , G03F7/40 , H01L21/033

6. 发明公开

EP2733725A4 DRY ETHCING AGENT 审中-公开
标题翻译：干法刻蚀
公开(公告)号：EP2733725A4
公开(公告)日：2015-05-27
申请号：EP12818349
申请日：2012-06-13
申请人： CENTRAL GLASS CO LTD
发明人： KIKUCHI AKIOU , UMEZAKI TOMONORI , HIBINO YASUO , MORI ISAMU , OKAMOTO SATORU
IPC分类号： H01L21/3065 , C09K13/00 , C09K13/08 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/3065 , C09K13/00 , C09K13/08 , H01L21/31116 , H01L21/32137

7. 发明公开

EP2668248A1 USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS FOR MANUFACTURING INTEGRATED CIRCUITS HAVING PATTERNS WITH LINE-SPACE DIMENSIONS BELOW 50NM 有权
标题翻译：与格局至少三个短链全氟化组集成电路的表面活性剂的，可与领先尺寸PRODUCING下50海里USE
公开(公告)号：EP2668248A1
公开(公告)日：2013-12-04
申请号：EP12739044.1
申请日：2012-01-17
申请人： BASF SE
发明人： KLIPP, Andreas , MAYER, Dieter
IPC分类号： C09K13/08 , G03F7/32 , G03F7/20
CPC分类号： H01L21/0337 , C11D11/0047 , G03F7/0046 , G03F7/0048 , G03F7/2041 , G03F7/322 , G03F7/405
摘要： The use of surfactants A, the 1% by weight aqueous solutions of which exhibit a static surface tension 3; and a photolithographic process making use of the surfactants A in immersion photoresist layers, photoresist layers exposed to actinic radiation, developer solutions for the exposed photoresist layers and/or in chemical rinse solutions for developed patterned photoresists comprising patterns having line-space dimensions below 50 nm and aspect ratios >3. By way of the surfactants A, pattern collapse is prevented, line edge roughness is reduced, watermark defects are prevented and removed and defects are reduced by removing particles.

8. 发明公开

EP2342738A4 USE OF SURFACTANT/DEFOAMER MIXTURES FOR ENHANCED METALS LOADING AND SURFACE PASSIVATION OF SILICON SUBSTRATES 审中-公开
标题翻译：表面活性剂/ENTSCHÄUMUNGSMISCHUNGEN作者FOR硅衬底的增加的金属装料和表面钝化USE
公开(公告)号：EP2342738A4
公开(公告)日：2013-04-17
申请号：EP09818502
申请日：2009-10-01
申请人： ADVANCED TECH MATERIALS
发明人： KORZENSKI MICHAEL B , JIANG PING , BEALL CHARLES , BJELOPAVLIC MICK
IPC分类号： C09K13/08 , C23F1/18 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/31111 , C09K13/08 , C11D1/00 , C11D1/008 , C11D1/72 , C11D1/78 , C11D3/0026 , C11D3/042 , C11D3/2068 , C11D3/37 , C11D3/3707 , C11D11/0047 , C23F1/18 , H01L21/02032 , H01L21/32134

9. 发明公开

EP2480627A1 AQUEOUS ACIDIC ETCHING SOLUTION AND METHOD FOR TEXTURING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES 审中-公开
标题翻译：酸水溶液用于结构晶体硅表面蚀刻AND METHOD衬底单晶AND MORE
公开(公告)号：EP2480627A1
公开(公告)日：2012-08-01
申请号：EP10751943.1
申请日：2010-09-09
申请人： BASF SE , GP Solar GmbH
发明人： BRAUN, Simon , PRÖLß, Julian , MELNYK, Ihor , MICHEL, Michael , MATHIJSSEN, Stefan
IPC分类号： C09K13/08 , H01L31/00
CPC分类号： C09K13/08 , C11D11/0047 , H01L31/02363 , Y02E10/50
摘要： An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protru- sions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method.
摘要翻译：在适合于织构化的单晶和多晶硅衬底的表面，并且含有基于溶液，3至10重量％的氢氟酸的总重量wässrige酸性蚀刻溶液; 10重量硝酸的35％; 按重量计5硫酸的40％; 和55〜82％重量的水; 用于纹理化的单晶和多晶硅衬底，其包括（1）使衬底与所述的wässrige酸性蚀刻溶液中的至少一个主表面的步骤中的表面的方法; （2）蚀刻所述衬底的至少一个主表面上的时间，并在足以获得的表面纹理由......组成凹部和凸部的温度; 和（3）从与所述wässrige酸性蚀刻溶液接触的基板的至少一个主表面上; 以及用于制造使用该解决方案所述和织构化方法的光伏电池和太阳能电池的方法。

10. 发明公开

EP2478068A1 INK JET PRINTABLE ETCHING INKS AND ASSOCIATED PROCESS 审中-公开
标题翻译： TINTENSTRAHLDRUCKBAREÄTZTINTENUNDZUGEHÖRIGEVERFAHREN
公开(公告)号：EP2478068A1
公开(公告)日：2012-07-25
申请号：EP10747173.2
申请日：2010-08-20
申请人： Merck Patent GmbH
发明人： DOLL, Oliver , PLUMMER, Edward , JAMES, Mark , KOEHLER, Ingo , NANSON, Lana
IPC分类号： C09K13/08
CPC分类号： C09K13/08 , H01L31/068 , H01L31/0682 , H01L31/0684 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention refers to a method for contactless deposition of new etching compositions onto surfaces of semiconductor devices as well as to the subsequent etching of functional layers being located on top of these semiconductor devices. Said functional layers may serve as surface passivation layers and/or anti-reflective coatings (ARCs).
摘要翻译：本发明涉及一种用于将新的蚀刻组合物非接触沉积到半导体器件的表面上的方法，以及随后对位于这些半导体器件顶部的功能层的蚀刻。所述功能层可以用作表面钝化层和/或抗反射涂层（ARC）。

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