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61. 发明公开

EP0293000A3 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：EP0293000A3
公开(公告)日：1990-08-08
申请号：EP88108524.5
申请日：1988-05-27
申请人： HITACHI, LTD.
发明人： Chinone, Naoki , Nakajima, Hisao , Okai, Makoto , Tsuji, Shinji
IPC分类号： H01L33/00 , H01S3/19
CPC分类号： H01L33/305 , B82Y20/00 , H01L33/06 , H01S5/20 , H01S5/2059 , H01S5/223 , H01S5/343 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： In a light emitting device having a multiple layer film structure such as a multiple quantum well (MQW) structure which is made of an indium system compound semiconductor not containing phosphorus, part of the region of the multiple film structure is formed as an intermixed region by introducing impurities.

62. 发明公开

EP0342953A3 Semiconductor optical amplifying element 失效
标题翻译：半导体光学放大元件
公开(公告)号：EP0342953A3
公开(公告)日：1990-04-25
申请号：EP89304979.1
申请日：1989-05-17
申请人： KOKUSAI DENSHIN DENWA KABUSHIKI KAISHA
发明人： Utaka, Katsuyuki , Matsushima, Yuichi , Sakai, Kazuo , Akiba, Shigeyuki
IPC分类号： H01S3/00 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2027 , H01S5/2203 , H01S5/34306 , H01S5/34313 , H01S5/50
摘要： A semiconductor optical amplifying element which has a semiconductor multilayer structure including at least a first semiconductor layer (4) for providing an optical gain in response to the injection of carriers thereinto, and a p-side electrode (7) and an n-side electrode (8) for the carrier injection. A first and a second reflecting surface (7,9) are disposed thickwisely of the semiconductor multilayer structure and opposite to each other thereacross. The element is designed so that light incident thereon from the thickwise direction of the semiconductor multilayer structure is amplified by propagating through the element perpendicularly to the thickwise direction of the semiconductor multilayer structure while being multiple-reflected between the first and the second reflecting surfaces (7, 9)

63. 发明公开

EP0337470A2 Semiconductor quantum well laser 失效
标题翻译： Quantenstruktur-Halbleiterlaser。
公开(公告)号：EP0337470A2
公开(公告)日：1989-10-18
申请号：EP89106647.4
申请日：1989-04-13
申请人： OMRON TATEISI ELECTRONICS CO.
发明人： Imamoto, Hiroshi Omron Tateisi Electronics Co.
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/3407 , H01S5/34313 , H01S5/3432
摘要： In a laser having a separately confined heterostructure (SCH), a barrier layer (4) is constituted with a superlattice of AlGaAs/GaAs each comprising two to five molecular layers such that the leakage of injection carriers is decreased, that a steep heterojunction plane is attained, and an active layer (5) of a high quality is obtained, which leads to expectations for improvement of the temperature characteristic and the threshold current.
摘要翻译：在具有单独限制的异质结构（SCH）的激光器中，阻挡层（4）由AlGaAs / GaAs的超晶格构成，每个包含2至5个分子层，使得注入载流子的泄漏减小，陡峭的异质结面为获得了高质量的有源层（5），这导致对温度特性和阈值电流的改善的期望。

64. 发明公开

EP0232431A4 SEMICONDUCTOR DEVICE. 失效
标题翻译：半导体器件。
公开(公告)号：EP0232431A4
公开(公告)日：1988-01-26
申请号：EP86905398
申请日：1986-08-29
申请人： HITACHI LTD
发明人： KURODA TAKAO , WATANABE AKIYOSHI , TSUJI SHINJI , OHISHI AKIO , MATSUMURA HIROYOSHI
IPC分类号： H01S5/00 , B82Y20/00 , H01L29/15 , H01L29/80 , H01L31/10 , H01S5/34 , H01S5/343
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/3407 , H01S5/343 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/34366
摘要： A novel method of easily forming a quaternary group III-V crystal on the group III-V crystal maintaining the lattice superposition relative to the group III-V crystal. It is easy to form a superlattice that consists of a first binary group III-V (written as III1-V1) crystal layer and a ternary group III-V (III1-III2-V2) crystal layer on a substrate of group III-V crystal both maintaining lattice superposition with the substrate. A stabler superlattice layer is obtained if the ratio of film thickness of the III1-V1 crystal to that of the III1-III2-V2 crystal is so selected that the compositions thereof maintain the lattice superposition with the original crystal when the superlattice forms a mixed crystal spontaneously or being doped with impurities.

65. 发明公开

EP0253174A1 Resonant tunneling semiconductor devices 失效
标题翻译： Halbleiteranordnungen mit resonanceem Tunneleffekt。
公开(公告)号：EP0253174A1
公开(公告)日：1988-01-20
申请号：EP87109210.2
申请日：1987-06-26
申请人： International Business Machines Corporation
发明人： Chang, Leroy Li-Gong
IPC分类号： H01L29/205 , H01L29/76 , H01L31/02 , H01S3/19 , G02F1/015
CPC分类号： B82Y20/00 , G02F1/017 , H01L29/7606 , H01L31/0352 , H01S5/34313 , H01S5/3432
摘要： This disclosure relates to resonant tunneling semiconductor devices useful for transport functions such as switching or amplification, and also for electro-optical conversions. In the structure of these devices, a central potential well (l0) is formed of an opposite conductivity type of semiconductor material to two semiconductor layers (l2) outside resonant tunneling barriers (l4) on each side of the central potential well, such that electrons in the well can tunnel to and from the outside semiconductor layers. The central potential well serves as the base of a three terminal device in transport applications, and as the light responsive portion for electro-optical applications. In one disclosed embodiment, the device is constructed in five layers of the most commonly used gallium-aluminium-arsenide compounds, an n GaAs substrate, undoped GaAlAs, p GaAs, undoped GaAlAs, and n GaAs.
摘要翻译：本公开涉及对于诸如开关或放大之类的传输功能以及用于电光转换的谐振隧穿半导体器件。在这些器件的结构中，中心势阱（10）由相对导电类型的半导体材料形成到位于中心势阱的每一侧上的谐振隧穿势垒（14）外的两个半导体层（12），使得电子在井内隧道往返于外部的半导体层。中心势阱用作运输应用中的三端装置的基底，以及用于电光应用的光响应部分。在一个公开的实施例中，器件由五层最常用的镓 - 砷化镓化合物，n型GaAs衬底，未掺杂的GaAlAs，p GaAs，未掺杂的GaAlAs和n GaAs构成。

66. 发明公开

EP0136839A3 Semiconductor lasers 失效
标题翻译：半导体激光器
公开(公告)号：EP0136839A3
公开(公告)日：1986-11-26
申请号：EP84306035
申请日：1984-09-03
申请人： XEROX CORPORATION
发明人： Burnham, Robert , Holonyak, Nick, Jr.
IPC分类号： H01S03/19 , H01L33/00
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/0062 , H01L33/0095 , H01S5/34313 , H01S5/3432 , Y10S438/909
摘要： The method of tuning the wavelength of a quantum well laser to a shorter emission wavelength is accomplished by the step of thermal annealing the laser for a prescribed period of time, the length of the period and the temperature of annealing being based upon what primary emission wavelength is desired. For good results, the annealing is conducted in an elemental anti-outdiffusion environment or the laser structure to be annealed is encapsulated so that any outdiffusion of laser elemental constituents is discouraged during thermal annealing. In an exemplary illustration of the invention, laser heterostructures of the GaAl/GaAlAs regime are utilized and annealed for several hours in an As environment to selectively reduce the emission wavelength by as much as 20. or more. The As environment prevents the outdiffusion of As from the GaAl GaAlAs heterostructure during thermal annealing, elemental As having the lowest temperature of vaporization of elemental Ga, Al and As. High temperature annealing above this temperature may tend to drive elemental As from the heterostructure thereby changing its operating characteristics. Thermal annealing may be carried out in an annealing furnace, generally sealed in a quartz ampoule, or in a thermal pulse annealing system wherein properly prepared wafer samples may be alternately heated uniformly for prescribed periods of time at predetermined temperatures and periodically checked to determine the amount emission wavelength shift as compared to the set emission wavelength desired to be achieved for the laser.

67. 发明授权

EP2805391B1 HIGH DENSITY LASER OPTICS 有权转让
公开(公告)号：EP2805391B1
公开(公告)日：2018-06-20
申请号：EP12866321.8
申请日：2012-01-18
申请人： Hewlett Packard Enterprise Development LP
发明人： TAN, Michael, Renne, Ty , FATTAL, David, A. , SORIN, Wayne, V. , MATHAI, Sagi, V.
IPC分类号： H01S5/183 , H01S3/067 , H01S5/10 , B82Y20/00 , G02B6/12 , G02B6/13 , H01S5/02 , H01S5/022 , H01S5/024 , H01S5/026 , H01S5/187 , H01S5/34 , G02B6/124 , H01S5/068 , H01S5/343 , H01S5/40 , H01S5/42
CPC分类号： H01S5/423 , B82Y20/00 , G02B6/12016 , G02B6/12019 , G02B6/12026 , G02B6/124 , G02B6/13 , G02B2006/12107 , G02B2006/12164 , H01S5/0215 , H01S5/02248 , H01S5/02461 , H01S5/0268 , H01S5/068 , H01S5/1092 , H01S5/183 , H01S5/18319 , H01S5/18363 , H01S5/18386 , H01S5/187 , H01S5/3412 , H01S5/34313 , H01S5/3434 , H01S5/4087
摘要： Apparatuses and methods for high density laser optics are provided. An example, of a laser optics apparatus includes a plurality of vertical cavity surface emitting lasers (VCSELs) in a monolithically integrated array, a high contrast grating (HCG) integrated with an aperture of a vertical cavity of each of the plurality of the VCSELs to enable emission of a single lasing wavelength of a plurality of lasing wavelengths, and a plurality of single mode waveguides, each integrated with a grating coupler, that are connected to each of the plurality of the integrated VCSELs and the HCGs, where each of the grating couplers is aligned to an integrated VCSEL and HCG.

68. 发明公开

EP3198689A4 COMPACT, POWER-EFFICIENT STACKED BROADBAND OPTICAL EMITTERS 有权
公开(公告)号：EP3198689A4
公开(公告)日：2018-05-23
申请号：EP15845489
申请日：2015-09-23
申请人： HEPTAGON MICRO OPTICS PTE LTD
发明人： RIEL PETER , ROENTGEN PETER
IPC分类号： H01S3/091 , G01J3/06 , G01J3/10 , G01J3/26 , H01S3/094 , H01S3/16 , H01S5/00 , H01S5/028 , H01S5/04 , H01S5/10 , H01S5/183 , H01S5/30 , H01S5/323 , H01S5/343 , H01S5/40
CPC分类号： G01J3/10 , G01J3/06 , G01J3/108 , G01J3/26 , H01S3/094096 , H01S5/0071 , H01S5/0287 , H01S5/041 , H01S5/1096 , H01S5/183 , H01S5/32375 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3438 , H01S5/4043 , H01S5/4087
摘要： The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected wavelength or narrow range of wavelengths to pass through.

69. 发明公开

EP3271978A4 SURFACE-EMITTING LASER ARRAY, LASER APPARATUS, IGNITION DEVICE AND INTERNAL COMBUSTION ENGINE 有权
公开(公告)号：EP3271978A4
公开(公告)日：2018-04-04
申请号：EP16764441
申请日：2016-03-08
申请人： RICOH CO LTD
发明人： IZUMIYA KAZUMA , JIKUTANI NAOTO , NUMATA MASAYUKI
IPC分类号： H01S5/183 , F02P23/04 , H01S3/00 , H01S3/06 , H01S3/094 , H01S3/0941 , H01S3/113 , H01S3/16 , H01S5/026 , H01S5/042 , H01S5/32 , H01S5/343 , H01S5/42
CPC分类号： H01S5/423 , F02P23/04 , H01S3/005 , H01S3/0606 , H01S3/061 , H01S3/0621 , H01S3/0627 , H01S3/094053 , H01S3/09415 , H01S3/11 , H01S3/1115 , H01S3/113 , H01S3/1611 , H01S3/1643 , H01S3/1685 , H01S5/026 , H01S5/0425 , H01S5/18313 , H01S5/18361 , H01S5/22 , H01S5/3202 , H01S5/34313 , H01S5/3432 , H01S5/34353 , H01S2301/176
摘要： A surface-emitting laser array includes a plurality of light emitting parts. Each light emitting part includes a reflection mirror including aluminum gallium arsenide (AlxGa(1-x)As) where x is greater than 0.95 but less than or equal to 1; an active layer; and an electrode surrounding an emission region, from which laser light is emitted, the electrode covering a region between adjacent light emitting parts in the plurality of light emitting parts.

70. 发明公开

EP3293838A1 TERAHERTZ QUANTUM CASCADE LASER DEVICE 有权
标题翻译： TERAHERTZ量子级联激光器件
公开(公告)号：EP3293838A1
公开(公告)日：2018-03-14
申请号：EP17188987.6
申请日：2017-09-01
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kakuno, Tsutomu , Saito, Shinji , Yamane, Osamu
IPC分类号： H01S5/0625 , H01S5/12 , H01S5/10 , H01S5/024 , H01S5/028 , H01S5/06 , H01S5/22
CPC分类号： H01S5/0604 , H01S5/0206 , H01S5/02415 , H01S5/028 , H01S5/0425 , H01S5/0612 , H01S5/06258 , H01S5/1096 , H01S5/12 , H01S5/1203 , H01S5/22 , H01S5/3402 , H01S5/34313
摘要： A terahertz quantum cascade laser device includes a substrate (10), q semiconductor stacked body (20) and a first electrode (30). The semiconductor stacked body (20) includes an active layer (12) and a first clad layer (14). The active layer (12) is provided on the substrate (10) and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer (14) is provided on the active layer (12). A ridge waveguide (40) is provided in the semiconductor stacked body (20). A first distributed feedback region (14a) and a second distributed feedback region (14b) are provided at an upper surface of the first clad layer (14) to be separated from each other along an extension direction of the ridge waveguide (40). The first electrode (30) is provided at the upper surface of the first clad layer (14). A planar size of the first distributed feedback region (14a) is smaller than a planar size of the second distributed feedback region (14b).
摘要翻译：一种太赫兹量子级联激光器件，包括衬底（10），半导体叠层体（20）和第一电极（30）。半导体叠层体（20）包括有源层（12）和第一覆层（14）。有源层（12）设置在衬底（10）上并且被配置为通过分带间光学跃迁发射红外激光。第一覆盖层（14）设置在有源层（12）上。脊形波导（40）设置在半导体层叠体（20）中。第一分布反馈区域（14a）和第二分布反馈区域（14b）设置在第一包层（14）的上表面处，以沿着脊形波导（40）的延伸方向彼此分离。第一电极（30）设置在第一覆层（14）的上表面。第一分布反馈区域（14a）的平面尺寸小于第二分布反馈区域（14b）的平面尺寸。

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