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1. 发明授权

EP2003751B1 Semiconductor optical amplifying device, system and element 有权
标题翻译：该半导体光放大装置，系统和元件
公开(公告)号：EP2003751B1
公开(公告)日：2011-07-27
申请号：EP08155511.2
申请日：2008-04-30
申请人： Fujitsu Limited
发明人： Tanaka, Shinsuke , Morito, Ken , Yamazaki, Susumu
IPC分类号： H01S5/50 , G02B6/122
CPC分类号： H01S5/5009 , B82Y20/00 , G02B6/1228 , G02B2006/12078 , G02B2006/12121 , G02B2006/12128 , H01S5/026 , H01S5/1014 , H01S5/2275 , H01S5/32366 , H01S5/3404 , H01S5/34366

2. 发明授权

EP1760851B1 Semiconductor optical amplification device and optical integrated circuit 有权
标题翻译：的半导体光放大器和集成光路
公开(公告)号：EP1760851B1
公开(公告)日：2010-10-27
申请号：EP06251042.5
申请日：2006-02-27
申请人： FUJITSU LIMITED
发明人： Tanaka, Shinsuke c/o Fujitsu Limited , Morito, Ken c/o Fujitsu Limited
IPC分类号： H01S5/026 , H01S5/343 , H01S5/50 , H01S5/227 , G02F2/00
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/026 , H01S5/2222 , H01S5/2224 , H01S5/2275 , H01S5/3201 , H01S5/34366 , H01S5/34386 , H01S5/5009 , H01S5/509 , H01S2301/14

3. 发明公开

EP2003751A2 Semiconductor optical amplifying device, system and element 有权
标题翻译： OptischeHalbleiterverstärkungsvorrichtung，系统和元素
公开(公告)号：EP2003751A2
公开(公告)日：2008-12-17
申请号：EP08155511.2
申请日：2008-04-30
申请人： Fujitsu Limited
发明人： Tanaka, Shinsuke , Morito, Ken , Yamazaki, Susumu
IPC分类号： H01S5/343
CPC分类号： H01S5/5009 , B82Y20/00 , G02B6/1228 , G02B2006/12078 , G02B2006/12121 , G02B2006/12128 , H01S5/026 , H01S5/1014 , H01S5/2275 , H01S5/32366 , H01S5/3404 , H01S5/34366
摘要： A polarization-independent SOA having an InP substrate (11) used as a semiconductor substrate, and an active layer (14) taking an MQW structure formed of a barrier layer (14a) made of GaInAs with tensile strain applied thereto and a well layer (14b) made of GaInNAs with no strain applied thereto alternately laminated in a plurality of layers, e.g. four layers of the well layer (14b) and five layers of the barrier layer (14a). The SOA may find application in a WDM system owing to its relatively linear gain independent of the polarization state of light being amplified.
摘要翻译：具有用作半导体衬底的InP衬底（11）的偏振非依赖性SOA以及施加由施加有拉伸应变的GaInAs形成的阻挡层（14a）形成的MQW结构的有源层（14）和阱层（ 14b），其不施加应变的GaInNA交替层压在多个层中，例如，四层阱层（14b）和五层势垒层（14a）。 SOA可以在WDM系统中发现应用，因为其相对线性增益与被放大的光的偏振状态无关。

4. 发明授权

EP0232431B1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：EP0232431B1
公开(公告)日：1993-03-17
申请号：EP86905398.3
申请日：1986-08-29
申请人： HITACHI, LTD.
发明人： KURODA, Takao Hitachi Koganei-ryo, 5-20-22 , WATANABE, Akiyoshi Hitachi Shobu-ryo, 5-18-3 , TSUJI, Shinji Hitachi Koyasudai-apart, 2-32-A104 , OHISHI, Akio Hitachi dai 4 Kyoshin-ryo, 4-14-6 , MATSUMURA, Hiroyoshi 264-61, Kubo, Hidaka-machi
IPC分类号： H01S3/18 , H01L29/80 , H01L31/10
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01S5/3407 , H01S5/343 , H01S5/34306 , H01S5/34313 , H01S5/34326 , H01S5/3436 , H01S5/34366
摘要： A novel method of easily forming a quaternary group III-V crystal on the group III-V crystal maintaining the lattice superposition relative to the group III-V crystal. It is easy to form a superlattice that consists of a first binary group III-V (written as III1-V1) crystal layer and a ternary group III-V (III1-III2-V2) crystal layer on a substrate of group III-V crystal both maintaining lattice superposition with the substrate. A stabler superlattice layer is obtained if the ratio of film thickness of the III1-V1 crystal to that of the III1-III2-V2 crystal is so selected that the compositions thereof maintain the lattice superposition with the original crystal when the superlattice forms a mixed crystal spontaneously or being doped with impurities.
摘要翻译：一种容易在III-V族晶体上形成维持晶格叠加的III-V族四
方晶系的新方法。在III-V族的衬底上形成由第一二元族III-V（写为III1-V1）晶体层和三元III-V族（III1-III2-V2）晶体层组成的超晶格是容易的晶体都与衬底保持晶格叠加。如果选择III1-V1晶体的膜厚与III1-III2-V2晶体的膜厚的比率，以使得当超晶格形成混合晶体时其成分保持与原始晶体的晶格叠加，则获得更稳定的超晶格层自发或掺杂杂质。

5. 发明公开

EP3273552A1 QUANTUM CASCADE LASER 无效
标题翻译：量子级联激光器
公开(公告)号：EP3273552A1
公开(公告)日：2018-01-24
申请号：EP15883654.4
申请日：2015-09-17
申请人： Kabushiki Kaisha Toshiba
发明人： YABUHARA, Hidehiko
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3407 , H01S5/34 , H01S5/3401 , H01S5/3402 , H01S5/343 , H01S5/34366 , H01S2301/17
摘要： An active layer of a quantum cascade laser includes an active layer includes a plurality of emission regions and a plurality of injection regions. Each emission region includes an injection barrier layer, and an light-emitting quantum well layer that has at least two well layers, and that emits infrared light by undergoing an intersubband transition. Each injection region includes an extraction barrier layer, and a relaxation quantum well layer that creates an energy level for relaxing the energy of carriers from the each emission region. One of adjacent two well layers in the light-emitting quantum well layer of the each emission region on the side of the extraction barrier layer is deeper than a second well layer on the side of the injection barrier layer. The each emission region and the injection region are alternately stacked.
摘要翻译：量子级联激光器的有源层包括有源层，该有源层包括多个发射区域和多个注入区域。每个发射区域包括注入势垒层和具有至少两个阱层的发光量子阱层，并且通过经历亚带间跃迁发射红外光。每个注入区域包括提取阻挡层和产生用于放宽来自每个发射区域的载流子的能量的能级的弛豫量子阱层。提取阻挡层侧的每个发光区域的发光量子阱层中的相邻两个阱层中的一个比注入阻挡层侧上的第二阱层更深。每个发射区域和注入区域交替堆叠。

6. 发明公开

EP1760851A2 Semiconductor optical amplification device and optical integrated circuit 有权
标题翻译： OptischerHalbleiterverstärkerund integrierte optische Schaltung
公开(公告)号：EP1760851A2
公开(公告)日：2007-03-07
申请号：EP06251042.5
申请日：2006-02-27
申请人： FUJITSU LIMITED
发明人： Tanaka, Shinsuke c/o Fujitsu Limited , Morito, Ken c/o Fujitsu Limited
IPC分类号： H01S5/343 , H01S5/50 , H01S5/026 , H01S5/227
CPC分类号： H01S5/34313 , B82Y20/00 , H01S5/026 , H01S5/2222 , H01S5/2224 , H01S5/2275 , H01S5/3201 , H01S5/34366 , H01S5/34386 , H01S5/5009 , H01S5/509 , H01S2301/14
摘要： A semiconductor optical amplification device (10) is disclosed that has a gain spectrum of a wide bandwidth. The semiconductor optical amplification device includes an InP substrate (11) and an active layer (14) on the InP substrate. The active layer has a quantum well structure formed by alternately stacking a barrier layer and a well layer, the barrier layer is formed from a tensile-strained InGaAs film, and the well layer is formed from a compressively-strained InGaAs film.
摘要翻译：公开了一种具有宽带宽增益谱的半导体光放大装置（10）。半导体光放大装置包括InP衬底（11）和InP衬底上的有源层（14）。有源层具有通过交替层叠阻挡层和阱层而形成的量子阱结构，阻挡层由拉伸应变InGaAs膜形成，阱层由压缩应变的InGaAs膜形成。

7. 发明公开

EP1742314A2 Buried heterostructure device having integrated waveguide grating fabricated by single step MOCVD 审中-公开
标题翻译： Begrabene Heterostrukturvorrichtung mit integriertem Wellenleitergitter hergestellt miteinstüfigenMOCVD
公开(公告)号：EP1742314A2
公开(公告)日：2007-01-10
申请号：EP06012066.4
申请日：2006-06-12
申请人： Avago Technologies Fiber IP (Singapore) Pte. Ltd.
发明人： Bour, David, P. , Corzine, Scott, W.
IPC分类号： H01S5/227
CPC分类号： H01S5/12 , B82Y20/00 , G02B6/131 , H01S5/1231 , H01S5/1237 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device (100) is an optoelectronic device or transparent waveguide device that comprises a growth surface (222), a growth mask (230), an optical waveguide core mesa (240) and a cladding layer (160). The growth mask (230) is located on the semiconductor surface (222) and defines an elongate growth window (234) having a periodic grating profile (235, 236). The optical waveguide core mesa (240) is located in the growth window (240) and has a trapezoidal cross-sectional shape. The cladding layer (160) covers the optical waveguide core mesa (240) and extends over at least part of the growth mask (230). Such devices are fabricated by providing a wafer (210) comprising a growth surface (222), growing an optical waveguide core mesa (240) on the growth surface (222) by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa (240) with cladding material (160) at a second growth temperature, lower than the first growth temperature.
摘要翻译：装置（100）是包括生长表面（222），生长掩模（230），光波导芯台面（240）和包覆层（160）的光电器件或透明波导器件。生长掩模（230）位于半导体表面（222）上并且限定具有周期性光栅轮廓（235,236）的细长生长窗（234）。光波导核心台面（240）位于生长窗（240）中并且具有梯形横截面形状。包覆层（160）覆盖光波导芯体台（240）并延伸至生长掩模（230）的至少一部分。通过提供包括生长表面（222）的晶片（210）来制造这样的器件，通过在第一生长温度下的微选择性区域生长在生长表面（222）上生长光波导核心台面（240）并覆盖光学在第二生长温度下具有低于第一生长温度的包层材料（160）的波导核心台面（240）。

8. 发明公开

EP1719003A1 BURIED HETEROSTRUCTURE DEVICE FABRICATED BY SINGLE STEP MOCVD 有权
标题翻译：一步MOCVD国产埋异质成分
公开(公告)号：EP1719003A1
公开(公告)日：2006-11-08
申请号：EP05723631.7
申请日：2005-02-24
申请人： Agilent Technologies, Inc.
发明人： BOUR, David, P. , CORZINE, Scott, W.
IPC分类号： G02B6/10
CPC分类号： B82Y20/00 , G02B6/131 , H01S5/2004 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S5/34313 , H01S5/34366 , H01S2301/173 , H01S2304/04
摘要： The device is an optoelectronic device or transparent waveguide device that comprises a growth surface (122), a growth mask (132), an optical waveguide core mesa (140) and a cladding layer (160). The growth mask is located on the growth surface and defines an elongate growth window (134). The optical waveguide core mesa is located in the growth window and has a trapezoidal cross-sectional shape. The cladding layer covers the optical waveguide core mesa and extends over at least part of the growth mask. Such devices are fabricated by providing a wafer (110) comprising a growth surface (122), growing an optical waveguide core mesa (140) on the growth surface by micro-selective area growth at a first growth temperature and covering the optical waveguide core mesa with cladding material (160) at a second growth temperature, lower than the first growth temperature.

9. 发明公开

EP1676347A1 CONTROL OF OUTPUT BEAM DIVERGENCE IN A SEMICONDUCTOR WAVEGUIDE DEVICE 有权
标题翻译：控制在半导体波导组件的输出光束发散角
公开(公告)号：EP1676347A1
公开(公告)日：2006-07-05
申请号：EP04768505.2
申请日：2004-09-16
申请人： Intense Limited
发明人： QIU, Bocang, Intense Photonics Ltd
IPC分类号： H01S5/20 , G02B6/10 , H01S5/343 , G02B6/42
CPC分类号： B82Y20/00 , G02B6/122 , G02B6/1228 , H01S5/0655 , H01S5/2231 , H01S5/3215 , H01S5/3407 , H01S5/34366 , H01S2301/18
摘要： A semiconductor laser device incorporates a beam control layer (42, 41) for reducing far field and beam divergence. Within the beam control layer, a physical property of the semiconductor material varies as a function of depth through, the beam control layer, by provision of a first sub-layer (42) in which the property varies gradually from a first level to a second level, and a second sub-layer (41) in which the property varies from said second level to a third level. In the preferred arrangement, the conduction band edge of the semiconductor has a V-shaped profile through the beam control layer.

10. 发明公开

EP0865125A1 Semiconductor laser with multiple quantum well structure 失效
标题翻译： Halbleiterlaser mit einer Multiquantumwellstruktur
公开(公告)号：EP0865125A1
公开(公告)日：1998-09-16
申请号：EP98301396.2
申请日：1998-02-25
申请人： Oki Electric Industry Co., Ltd.
发明人： Munakata, Tsutomu , Kashima, Yasumasa
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/3403 , H01S5/3407 , H01S5/3409 , H01S5/34306 , H01S5/34313 , H01S5/3434 , H01S5/34366
摘要： A semiconductor laser having a multiple quantum well structure includes alternating well and barrier layers, with the barrier layers being InGaAlAs. The well layers may be InGaAs or InGaAsP. These materials increase the internal quantum efficiency of the laser, while decreasing electron over-flow from the quantum well.
摘要翻译：具有多量子阱结构的半导体激光器包括交替阱和阻挡层，其中阻挡层是InGaAlAs。阱层可以是InGaAs或InGaAsP。这些材料增加了激光器的内部量子效率，同时减少了量子阱的电子过流。

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