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41. 发明公开

EP0602725A2 Method of manufacturing an optoelectronic semiconductor device 失效
标题翻译： Verfahren zur Herstellung einer optoelektrischen Halbleitervorrichtung。
公开(公告)号：EP0602725A2
公开(公告)日：1994-06-22
申请号：EP93203456.4
申请日：1993-12-09
申请人： Philips Electronics N.V.
发明人： Binsma, Johannes Jordanus Maria , van der Heijden, Johannes Martinus Maria
IPC分类号： H01L33/00 , H01S3/19 , H01S3/085 , H01S3/025 , G02F1/313
CPC分类号： H01S5/026 , H01L33/0066 , H01S5/06256 , H01S5/125 , H01S5/2277 , H01S5/50
摘要： The invention relates to a method of manufacturing an optoelectronic semiconductor device whereby two comparatively thin layers are provided next to one another on a substrate by means of a non-selective growing process, an etching process, and a selective growing process, a cladding layer being present over said thin layers. In the known method, first the one thin layer and the cladding layer are grown, the latter is locally removed, and the other thin layer and the cladding layer are then grown in that position.
This method has the disadvantage that unevennesses (steps or openings) often arise at the surface of the layer structure above the transition between the thin layers.
A method according to the invention is characterized in that in a first non-selective growing process the one layer and a small portion of the cladding layer are provided, these layers are locally removed in the etching process, and the other thin layer and a small portion of the cladding layer are provided in that location in the selective growing process, after which in a second non-selective growing process the major portion of the cladding layer is provided. The layer structure obtained has a substantially plane surface which is free from defects and is very suitable for further processing. The thin layers may be, inter alia, an active and a radiation-guiding layer. According to the invention, especially devices having a mesa structure can be manufactured with a high accuracy and yield.
摘要翻译：本发明涉及一种制造光电半导体器件的方法，其中通过非选择性生长工艺，蚀刻工艺和选择性生长工艺，在衬底上彼此相邻设置两个相对较薄的层，包层为存在于所述薄层之上。在已知的方法中，首先生长一个薄层和包覆层，然后将其局部去除，然后在该位置生长另一个薄层和包覆层。该方法的缺点在于，层间结构的表面上经常出现在薄层之间的过渡之上的不均匀（台阶或开口）。根据本发明的方法的特征在于，在第一非选择性生长工艺中，提供了一层和一小部分包覆层，这些层在蚀刻工艺中局部去除，另一薄层和小在选择性生长过程中在该位置设置包覆层的部分，之后在第二非选择性生长工艺中提供包覆层的主要部分。获得的层结构具有基本上平面的表面，其没有缺陷，非常适于进一步加工。特别地，薄层可以是有源和辐射引导层。根据本发明，特别是具有台面结构的装置可以以高精度和高产率制造。

42. 发明授权

EP0375021B1 Tunable semiconductor diode laser with distributed reflection and method of manufacturing such a semiconductor diode laser 失效转让
标题翻译： Verstimmbarer半导体二极管激光器与分布反射和制造这样的半导体二极管激光器的方法。
公开(公告)号：EP0375021B1
公开(公告)日：1994-03-16
申请号：EP89203139.4
申请日：1989-12-11
申请人： Philips Electronics N.V.
发明人： Kuindersma, Pieter Ids , Van Dongen, Teunis
IPC分类号： H01S3/106 , H01S3/085 , H01L33/00
CPC分类号： H01S5/06256 , H01S5/227 , H01S5/2277

43. 发明授权

EP0276069B1 Vapor phase epitaxial growth of iron-doped, indium-based, compound group III-V semiconductors 有权
标题翻译：基于印迹的化合物III-V族化合物的蒸气相外延生长
公开(公告)号：EP0276069B1
公开(公告)日：1992-12-16
申请号：EP88300203.2
申请日：1988-01-12
申请人： AT&T Corp.
发明人： Johnston, Wilbur Dexter, Jr. , Long, Judith Ann , Wilt, Daniel Paul
IPC分类号： C30B25/02 , C30B29/40 , H01L21/205 , H01L29/207
CPC分类号： H01L33/305 , C30B25/02 , C30B29/40 , H01L21/02392 , H01L21/02543 , H01L21/02581 , H01L21/0262 , H01L33/0062 , H01S5/2237 , H01S5/227 , H01S5/2277 , H01S5/24

44. 发明授权

EP0254311B1 A distributed feedback laser diode 失效
标题翻译：分布式反馈激光二极管
公开(公告)号：EP0254311B1
公开(公告)日：1992-11-04
申请号：EP87110685.2
申请日：1987-07-23
申请人： NEC CORPORATION
发明人： Ikuo, Mito c/o NEC Corporation
IPC分类号： H01S3/085 , H01S3/06 , H01S3/19
CPC分类号： H01S5/12 , H01S5/028 , H01S5/124 , H01S5/227 , H01S5/2275 , H01S5/2277

45. 发明授权

EP0297838B1 A distributed feedback semiconductor laser 失效
标题翻译：分布式反馈半导体激光器
公开(公告)号：EP0297838B1
公开(公告)日：1992-05-13
申请号：EP88305887.7
申请日：1988-06-29
申请人： NEC CORPORATION
发明人： Yamaguchi, Masayuki
IPC分类号： H01S3/06 , H01S3/19
CPC分类号： H01S5/164 , H01S5/12 , H01S5/227 , H01S5/2277

46. 发明公开

EP0357095A1 Method of manufacturing an optoelectronic device 失效
标题翻译： Verfahren zur Herstellung einer optoelektronischen Anordnung。
公开(公告)号：EP0357095A1
公开(公告)日：1990-03-07
申请号：EP89201627.0
申请日：1989-06-21
申请人： Philips Electronics N.V.
发明人： Van Gurp, Gerardus Josephus
IPC分类号： H01L31/0304 , H01L31/18 , H01L33/00 , H01L21/223 , H01L21/22
CPC分类号： H01L33/305 , H01L21/2233 , H01L31/03042 , H01L31/184 , H01L33/0062 , H01S5/227 , H01S5/2277 , Y02E10/544 , Y02P70/521
摘要： The invention relates to a method of manufacturing an optoelectronic device. An indium phosphide part of a semiconductor body is contacted either directly or indirectly through a ternary or quaternary layer by means of a zinc diffusion. In order to improve the contact resistance, after the zinc diffusion and before the application of contacts, a heat treatment of the semiconductor body is carried out in the absence of a zinc source.
摘要翻译：本发明涉及一种制造光电器件的方法。半导体主体的磷化铟部分通过锌扩散直接或间接地通过三元或四层接触。为了提高接触电阻，在锌扩散之后和施加触点之前，在没有锌源的情况下进行半导体体的热处理。

47. 发明公开

EP0308017A1 DCPBH laser having a high temperature stability 失效
标题翻译： DCPBH-Laser mit Guter Temperatur-Stabilität。
公开(公告)号：EP0308017A1
公开(公告)日：1989-03-22
申请号：EP88201964.9
申请日：1988-09-09
申请人： Philips Electronics N.V.
发明人： Van Dongen, Teunis
IPC分类号： H01S3/19
CPC分类号： H01S5/1028 , H01S5/227 , H01S5/2277
摘要： A semiconductor laser of the double hetero-junction type having a current-limiting buried blocking layer (14) (DCPBH laser).
According to the invention, a second active layer (5) and an additional passive layer (4) are provided above the first active layer (3). As a result, the threshold current required for laser effect has become less strongly dependent upon temperature.
At the same time, the radiation intensity versus current strength characteristic of the laser according to the invention above the threshold current is substantially straight without the presence of "kinks".
摘要翻译：具有限流掩埋阻挡层（14）（DCPBH激光器）的双异质结型半导体激光器。根据本发明，在第一有源层（3）的上方提供第二有源层（5）和附加的钝化层（4）。结果，激光效应所需的阈值电流变得不太依赖于温度。同时，根据本发明的激光器在阈值电流之上的辐射强度对电流强度特性基本上是直的，而不存在“扭结”。

48. 发明授权

EP0106305B1 Double heterostructure semiconductor laser with periodic structure formed in guide layer 失效
标题翻译：在指导层中形成周期结构的双重结构半导体激光
公开(公告)号：EP0106305B1
公开(公告)日：1989-03-15
申请号：EP83110135.7
申请日：1983-10-11
申请人： NEC CORPORATION
发明人： Mito, Ikuo
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/026 , H01S5/10 , H01S5/1028 , H01S5/12 , H01S5/2238 , H01S5/2277

49. 发明公开

EP0260909A3 Semiconductor light-emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：EP0260909A3
公开(公告)日：1988-06-01
申请号：EP87308096
申请日：1987-09-14
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Kinoshita, Jun'ichi c/o Patent Division , Morinaga, Motoyasu c/o Patent Division , Furuyama, Hideto c/o Patent Division , Hirayama, Yuzo c/o Patent Division
IPC分类号： H01S03/19 , H01L33/00
CPC分类号： H01S5/227 , H01S5/2277 , Y10S148/05 , Y10S148/051 , Y10S148/066 , Y10S148/095 , Y10T29/413
摘要： An active layer is formed on an n-type InP buffer layer (11) of a substrate (10). A pair of strip-shaped grooves are formed into the active layer to divide it into a contract portion (12a) and side portions. A p-type InP cladding layer (15) is deposited on the entire surface of the active layer and grooves. The cladding layer (15) is selectively etched to form a mesa portion including the central active portion (12a) and expose the buffer layer (11). An insulating film (18) is coated on the mesa portion and buffer layer, so that a semiconductor light-emitting device is manufactured.

50. 发明授权

EP0111650B1 Double-channel planar heterostructure semiconductor laser 失效
标题翻译：双通道平面结构半导体激光器
公开(公告)号：EP0111650B1
公开(公告)日：1988-06-01
申请号：EP83109574.0
申请日：1983-09-26
申请人： NEC CORPORATION , NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Mito, Ikuo , Kobayashi, Kohroh , Ikegami, Tetsuhiko
IPC分类号： H01S3/19
CPC分类号： H01S5/227 , H01S5/06213 , H01S5/2277

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