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41. 发明授权

EP2120301B1 WAVELENGTH TUNABLE SEMICONDUCTOR LASER DEVICE, CONTROLLER FOR THE SAME, AND CONTROL METHOD FOR THE SAME 失效
标题翻译： WENENLÄNGENABSTIMMBAREHALBLEITERLASERVORRICHTUNG，STEUEREINHEITDAFÜRUND STEUERVERFAHRENDAFÜR
公开(公告)号：EP2120301B1
公开(公告)日：2012-08-22
申请号：EP08721629.7
申请日：2008-03-07
申请人： Nippon Telegraph and Telephone Corporation
发明人： FUJIWARA, Naoki , ISHII, Hiroyuki , OOHASHI, Hiromi , OKAMOTO, Hiroshi
IPC分类号： H01S5/024 , H01S5/0625 , H01S5/22 , B82Y20/00
CPC分类号： H01S5/06256 , B82Y20/00 , H01S5/0014 , H01S5/024 , H01S5/02407 , H01S5/02461 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/0617 , H01S5/06808 , H01S5/22 , H01S5/2214 , H01S5/34306 , H01S5/4087 , H01S2301/173
摘要： Provided are a wavelength variable semiconductor laser element wherein wavelength drift is prevented, and a control apparatus and a control method for such semiconductor laser element. The wavelength variable semiconductor laser element is provided with an active region for oscillating a laser beam, and a wavelength variable region which shifts the wavelength of the oscillated laser beam. In the wavelength variable semiconductor laser element, a heat compensating region, which adjoins the wavelength variable region and converts most of the applied power into heat, is arranged so that the sum of power to be applied to the wavelength variable region and power to be applied to the heat compensating region is constantly fixed.
摘要翻译：目的是提供一种波长可调谐半导体激光器件，用于其的控制器及其控制方法，其防止波长漂移。波长可调谐半导体激光器件包括用于振荡激光束的有源区域和用于移动激光束波长的波长调谐区域。在该装置中，与波长调谐区域相邻设置用于将大部分输入的电力转换为热量的热补偿区域，输入到波长调谐区域的电力和输入到热补偿区域的电力之和始终保持不变。

42. 发明公开

EP2467877A1 ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS 审中-公开
标题翻译：各向异性应力的HALF POLARNITRIDQUANTUMSBOHRLÖCHERNCONTROL通过与OFFSET SHIFT部分或完全的平滑铝铟镓氮化物层
公开(公告)号：EP2467877A1
公开(公告)日：2012-06-27
申请号：EP10810724.4
申请日：2010-08-23
申请人： The Regents of the University of California
发明人： OHTA, Hiroaki , WU, Feng , TYAGI, Anurag , CHAKRABORTY, Arpan , SPECK, James, S. , DENBAARS, Steven, P. , NAKAMURA, Shuji , YOUNG, ERIN, C.
IPC分类号： H01L31/00
CPC分类号： H01L21/0254 , B82Y20/00 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/16 , H01L33/32 , H01S5/2009 , H01S5/2201 , H01S5/3201 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： An epitaxial structure for a Ill-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

43. 发明公开

EP2383846A2 Light emitting device and manufacturing method thereof 失效
标题翻译： Lichtemissionsvorrichtung und Herstellungsverfahrendafür
公开(公告)号：EP2383846A2
公开(公告)日：2011-11-02
申请号：EP11174758.0
申请日：1997-04-07
申请人： Sanyo Electric Co., Ltd.
发明人： Matsushita, Yasuhiko , Yagi, Katsumi , Kunisato, Tatsuya , Kano, Takashi , Ueda, Yashiro
IPC分类号： H01S5/343 , H01L33/32
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01S5/0213 , H01S5/221 , H01S5/2231 , H01S5/32341 , H01S2301/173 , H01S2304/04
摘要： A light emitting device includes a cladding layer composed of a III-V group nitride system semiconductor of a first conductivity type, an active layer formed on the cladding layer of the first conductivity type and composed of a III-V group nitride system semiconductor containing In, an undoped cap layer formed on the active layer and composed of a III-V group nitride system semiconductor, and a cladding layer formed on the cap layer and composed of a III-V group nitride system semiconductor of a second conductivity type.
摘要翻译：发光器件包括由第一导电类型的III-V族氮化物系半导体构成的包层，形成在第一导电类型的包层上的有源层，并且由含有In的III-V族氮化物系半导体形成在有源层上并由III-V族氮化物系半导体构成的未掺杂的帽层，以及形成在覆盖层上并由第二导电类型的III-V族氮化物半导体构成的覆层。

44. 发明公开

EP2351171A1 MANUFACTURING METHOD, SURFACE-EMITTING LASER DEVICE, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNER, AND IMAGE FORMING APPARATUS 有权
标题翻译：法，表面发射激光器器件，OBERFLÄCHENEMITTIERENDES激光器阵列，光学扫描和成像设备
公开(公告)号：EP2351171A1
公开(公告)日：2011-08-03
申请号：EP09827586.0
申请日：2009-11-12
申请人： Ricoh Company, Ltd.
发明人： SHOUJI, Hiroyoshi , SATO, Shunichi , ISHII, Toshihiro , MAKITA, Kengo , HAYASHI, Masahiro , SASAKI, Toshihide , ITOH, Akihiro
IPC分类号： H01S5/183
CPC分类号： H01S5/18361 , H01S5/0202 , H01S5/18311 , H01S5/3202 , H01S5/423 , H01S2301/173 , H01S2301/176
摘要： A manufacturing method for manufacturing a surface-emitting laser device includes the steps of forming a laminated body in which a lower reflecting mirror, a resonator structure including an active layer, and an upper reflecting layer having a selective oxidized layer are laminated on a substrate; etching the laminated body to form a mesa structure having the selective oxidized layer exposed at side surfaces thereof; selectively oxidizing the selective oxidized layer from the side surfaces of the mesa structure to form a constriction structure in which a current passing region is surrounded by an oxide; forming a separating groove at a position away from the mesa structure; passivating an outermost front surface of at least a part of the laminated body exposed when the separating groove is formed; and coating a passivated part with a dielectric body.

45. 发明公开

EP2258029A2 HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERBAUELEMENTS 有权转让
公开(公告)号：EP2258029A2
公开(公告)日：2010-12-08
申请号：EP09726832.0
申请日：2009-03-09
申请人： OSRAM Opto Semiconductors GmbH
发明人： EICHLER, Christoph , STRAUSS, Uwe
IPC分类号： H01S5/22
CPC分类号： H01L22/10 , H01L22/12 , H01S5/22 , H01S2301/173
摘要： The invention relates to a semiconductor component with a semiconductor body (2) having a semiconductor layer sequence which has an active region (21) for the generation of coherent radiation and an indicator layer (3). On the side facing away from the active region of an interface (30) that delimits some sections of the semiconductor body (2) in the vertical direction, the semiconductor body (2) comprises a web-like region (4) which extends in the vertical direction between the interface (30) and a surface (40) of the semiconductor body (2). The indicator layer (3) has a material composition that differs from that of the material of the web-like region (4), which adjoins the indicator layer (3). The distance of the indicator layer (3) from the surface (40) is not greater than a distance of the interface (30) from the surface (40). The invention further relates to a method for producing a semiconductor component.
摘要翻译：本发明涉及具有半导体主体（2）的半导体部件，半导体主体（2）具有半导体层序列，该半导体层序列具有用于产生相干辐射的有源区（21）和指示层（3）。在远离界定半导体本体（2）的垂直方向上的一些部分的界面（30）的有源区的一侧上，半导体本体（2）包括网状区域（4），其在（30）与半导体本体（2）的表面（40）之间的垂直方向。指示剂层（3）具有与邻接指示剂层（3）的网状区域（4）的材料不同的材料组成。指示剂层（3）距表面（40）的距离不大于界面（30）距表面（40）的距离。本发明还涉及用于制造半导体部件的方法。

46. 发明公开

EP2242153A1 Wavelenght variable semiconductor laser element, apparatus and method for controlling the same 失效
标题翻译：波长可变半导体激光器元件，和设备及其控制方法
公开(公告)号：EP2242153A1
公开(公告)日：2010-10-20
申请号：EP10167736.7
申请日：2008-03-07
申请人： Nippon Telegraph And Telephone Corporation
发明人： Fujiwara, Naoki , Ishii, Hiroyuki , Oohashi, Hiromi , Okamoto, Hiroshi
IPC分类号： H01S5/062 , H01S5/125
CPC分类号： H01S5/06256 , B82Y20/00 , H01S5/0014 , H01S5/024 , H01S5/02407 , H01S5/02461 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/0617 , H01S5/06808 , H01S5/22 , H01S5/2214 , H01S5/34306 , H01S5/4087 , H01S2301/173
摘要： A control method for a wavelength tunable semiconductor laser device including an active region (2,11a) for oscillating a laser beam, a wavelength tuning region (4,11b) for shifting a wavelength of the laser beam, and a thermal compensation region (4,11c) adjacent to the wavelength tuning region (4,11b) for converting most of the inputted electric power to heat, when a laser beam is oscillated from the wavelength tunable semiconductor laser device, comprising measuring an electric current-voltage characteristic of each of the wavelength tuning region and the thermal compensation region, finding an electric current-electric power characteristic of each of the wavelength tuning region and the thermal compensation region from the electric current-voltage characteristics is disclosed. Further, on the basis of the electric current-voltage characteristics and the electric current-electric power characteristics, determining and controlling an electric current or voltage applied to each of the wavelength tuning region (4,11b) and the thermal compensation region (4,11c) so that the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.
摘要翻译：为用于移动所述激光束的波长振荡的激光束，一个波长可调区域（4,11b），用于波长可调半导体激光元件包括控制方法（有源区域（2,11a），以及一个热补偿区域4 ，11C）邻近用于转换最输入电功率来加热，当激光束从波长可调半导体激光元件振荡，测量每一个的电流 - 电压特性的包含所述波长可调区域（4,11b）所述波长可调区域和所述热补偿区域，找到每个从电流 - 电压特性的波长可调区域和所述热补偿区域的电流 - 功率特性的光盘被游离缺失。进一步的电流 - 电压特性和电流 - 电功率特性，确定开采的基础上，并施加到每个所述波长可调区域（4,11b）和所述热补偿区域的电流或电压（4控制， 11C）所以没有输入到所述波长可调区域和输入到所述热补偿区域电功率的电功率之和始终保持恒定。

47. 发明授权

EP1813975B1 Optical semiconductor device and optical semiconductor integrated circuit 有权
标题翻译：光学半导体器件和半导体光学集成电路
公开(公告)号：EP1813975B1
公开(公告)日：2010-08-25
申请号：EP07107222.7
申请日：2004-03-30
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： Nunoya, Nobuhiro , Shibata, Yasuo , Fujiwara, Naoki , Kikuchi, Nobuhiro , Tomori, Yuichi
IPC分类号： G02B6/12 , G02B6/42 , H01S5/10
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/4202 , H01S5/026 , H01S5/06206 , H01S5/06256 , H01S5/0654 , H01S5/068 , H01S5/101 , H01S5/1017 , H01S5/1025 , H01S5/1085 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/2205 , H01S5/227 , H01S2301/173

48. 发明公开

EP1335435A3 Semiconductor Light-Emitting Devices 有权
标题翻译：发光半导体装置
公开(公告)号：EP1335435A3
公开(公告)日：2010-03-24
申请号：EP03002738.7
申请日：2003-02-06
申请人： NGK INSULATORS, LTD.
发明人： Tanaka, Mitsuhiro , Shibata, Tomohiko , Oda, Osamu , Egawa, Takashi, 405 Green Heights Ieiyakushi
IPC分类号： H01L33/00 , H01S5/00 , H01L21/205
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/025 , H01L33/12 , H01S5/22 , H01S5/34333 , H01S2301/173
摘要： An object of the present invention is to provide a semiconductor light-emitting device that reduces dislocation density and has a high light emission efficiency. A semiconductor light-emitting device 20 has an underlayer 13 made of nitride semiconductor containing Al and a dislocation density of 10 11 /cm 2 or less. The device further has an n-type conductive layer 14 and p-type conductive layer 17 each composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 10 /cm 2 or less. The device still further has a light emitting layer 15 composed of nitride semiconductor having an Al content smaller than that of the nitride semiconductor constituting the underlayer and having a dislocation density of 1×10 10 /cm 2 or less, as well.

49. 发明公开

EP2153499A1 GAN LASERS ON ALN SUBSTRATES AND METHODS OF FABRICATION 审中-公开
标题翻译：甘LASERS对AlN基材和方法
公开(公告)号：EP2153499A1
公开(公告)日：2010-02-17
申请号：EP08754759.2
申请日：2008-05-28
申请人： Corning Incorporated
发明人： BHAT, Rajaram , NAPIERALA, Jerome , SIZOV, Dmitry , ZAH, Chung-En
IPC分类号： H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/183 , H01S5/3201 , H01S5/3216 , H01S2301/173
摘要： Ga(In)N -based laser structures and related methods of fabrication are proposed where Ga (In)N-based semiconductor laser structures are formed on AlN or GaN substrates (20) in a manner that addresses the need to avoid undue tensile strain in the semiconductor structure. In accordance with one embodiment of the present invention, a Ga (In)N-based semiconductor laser is provided on an AlN or GaN substrate provided with an AlGaN lattice adjustment layer (30) where the substrate (20), the lattice adjustment layer (30), the lower cladding region (60), the active waveguiding region (40), the upper cladding region (50), and the N and P type contact regions (70, 60) of the laser form a compositional continuum in the semiconductor laser. Additional embodiments are disclosed and claimed.

50. 发明公开

EP2149943A2 Temperature tuning of the wavelength of a laser diode by heating 有权转让
标题翻译：通过加热对激光二极管的波长进行温度调节
公开(公告)号：EP2149943A2
公开(公告)日：2010-02-03
申请号：EP09174811.1
申请日：2007-03-20
申请人： Eudyna Devices Inc.
发明人： Ishikawa, Tsutomu
IPC分类号： H01S5/026 , H01S5/06 , H01S5/0625 , H01S5/227 , H01S5/32 , H01S5/12 , G02F1/01
CPC分类号： H01S5/0612 , H01S5/02453 , H01S5/0261 , H01S5/0265 , H01S5/06256 , H01S5/06258 , H01S5/1209 , H01S5/2214 , H01S5/227 , H01S5/3211 , H01S2301/173
摘要： An optical semiconductor device (100) has a semiconductor substrate (101), an optical semiconductor region (102) and a heater (103). The optical semiconductor region (102) is provided on the semiconductor substrate (101) and has a width smaller than that of the semiconductor substrate (101). The heater (103) is provided on the optical semiconductor region (102). The optical semiconductor region (102) has a cladding region (104), an optical waveguide layer (105) and a low thermal conductivity layer (106). The optical waveguide layer (105) is provided in the cladding region (104) and has a refractive index higher than that of the cladding region (104). The low thermal conductivity layer (106) is provided between the optical waveguide layer (105) and the semiconductor substrate (101) and has a thermal conductivity lower than that of the cladding region (104).
摘要翻译：光半导体装置（100）具有半导体基板（101），光半导体区域（102）和加热器（103）。光半导体区域（102）设置在半导体基板（101）上，且具有比半导体基板（101）小的宽度。加热器（103）设置在光半导体区域（102）上。光半导体区域（102）具有包层区域（104），光波导层（105）和低导热率层（106）。光波导层（105）设置在包层区域（104）中，并具有比包层区域（104）高的折射率。在光波导层（105）和半导体基板（101）之间设置低导热率层（106），并且导热率低于包层区域（104）。

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