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1. 发明公开

EP3985812A1 SEMICONDUCTOR LIGHT SOURCE ELEMENT AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR WAVEGUIDE WINDOW STRUCTURE 审中-公开
公开(公告)号：EP3985812A1
公开(公告)日：2022-04-20
申请号：EP19934267.6
申请日：2019-06-17
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： FUJIWARA, Naoki , SHINDO, Takahiko , KANAZAWA, Shigeru , CHIN, Meishin
IPC分类号： H01S5/16 , G02B6/12 , H01S5/026 , H01S5/12
摘要： Provided is a semiconductor light source element or an optical device including a semiconductor optical waveguide of a high-mesa semi-insulated embedded structure having a window structure made of the same material as an overclad layer at a light emission end, and a method for manufacturing thereof, in which an active layer at a portion of the window structure is removed, and then the same layer as the overclad layer is formed.

2. 发明公开

EP3764488A1 SEMICONDUCTOR INTEGRATED OPTICS ELEMENT AND PRODUCTION METHOD THEREFOR 有权
公开(公告)号：EP3764488A1
公开(公告)日：2021-01-13
申请号：EP19763524.6
申请日：2019-02-28
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： SHINDO, Takahiko , FUJIWARA, Naoki , SANO, Kimikazu , ISHII, Hiroyuki , MATSUZAKI, Hideaki , YAMADA, Takashi , HORIKOSHI, Kengo
IPC分类号： H01S5/042 , H01S5/026 , H01S5/12 , H01S5/227 , H01S5/50
摘要： A semiconductor optical integrated element (AXEL) designed to output further intensified light dispenses with an additional inspection process and prevents an increase in manufacturing costs. A method for manufacturing such a semiconductor optical integrated element, includes the step of forming a semiconductor wafer by arranging a plurality of the semiconductor optical integrated elements two-dimensionally such that optical axes of the semiconductor optical integrated elements are aligned. The semiconductor optical integrated elements each include a DFB laser, an EA modulator, and a SOA that are monolithically integrated on an identical substrate and that are disposed in an order of the DFB laser, the EA modulator, and the SOA along a light emitting direction. The method further includes the steps of cleaving the semiconductor wafer along a plane orthogonal to the light emitting direction to form a semiconductor bar including a plurality of the semiconductor optical integrated elements arranged one-dimensionally along a direction orthogonal to the light emitting direction such that the semiconductor optical integrated elements adjacent to each other share an identical cleavage end face as a light emission surface, inspecting each of the semiconductor optical integrated elements of the semiconductor bar by energizing and driving the SOA and the DFB laser through a connection wiring part that electrically connects an electrode of the SOA and an electrode of the DFB laser together, and separating out each of the semiconductor optical integrated elements of the semiconductor bar at a boundary line between the adjacent semiconductor optical integrated elements after the inspection to cut the connection wiring part electrically connecting the electrode of the SOA and the electrode of the DFB laser and electrically isolate the SOA and the DFB laser from each other.

3. 发明公开

EP3413411A1 OPTICAL TRANSMITTER AND LIGHT INTENSITY MONITORING METHOD 审中-公开
公开(公告)号：EP3413411A1
公开(公告)日：2018-12-12
申请号：EP17747532.4
申请日：2017-02-02
申请人： Nippon Telegraph And Telephone Corporation
发明人： KOBAYASHI, Wataru , ITO, Toshio , FUJIWARA, Naoki
IPC分类号： H01S5/026 , G02F1/025 , H01S5/0683 , H01S5/12 , H01S5/40 , H01S5/50
CPC分类号： G02F1/025 , H01S5/026 , H01S5/0683 , H01S5/12 , H01S5/40 , H01S5/50
摘要： The present invention provides an optical transmitter and a light intensity monitoring method that provide reliable APC feedback for a semiconductor laser equipped with an SOA. The optical transmitter includes an SOA integrated EA-DFB having a DFB laser, an EA modulator connected to the DFB laser, and an SOA connected to the EA modulator. In the structure of the optical transmitter, a light detector part (404) is disposed forward of the output end side of an SOA part (403). The light detector part (404) changes part of an output light beam from the SOA part (403) into an electric current and detects light, while guiding the remaining part of the output light beam to a waveguide (405). With the light detector part (404) disposed forward for the SOA part (403), it is possible to feed back the output result from the SOA part (403). Hence, good APC is possible.

4. 发明授权

EP3358684B1 SEMICONDUCTOR LASER DEVICE 有权
公开(公告)号：EP3358684B1
公开(公告)日：2020-11-04
申请号：EP16850677.2
申请日：2016-09-29
申请人： Nippon Telegraph and Telephone Corporation , Tohoku University
发明人： ISHII, Hiroyuki , FUJIWARA, Naoki , WATANABE, Kei , ITOH, Mikitaka , KASAI, Keisuke , NAKAZAWA, Masataka
IPC分类号： H01S5/022 , H01S5/026 , H01S5/12 , H01S5/125 , H01S5/50 , H01S5/0625 , H01S5/40 , G02B6/42 , G01N21/01 , G02B6/12 , H01S5/14 , H01S5/06 , H01S5/10 , H01S5/227 , H01S5/024

5. 发明授权

EP2120301B1 WAVELENGTH TUNABLE SEMICONDUCTOR LASER DEVICE, CONTROLLER FOR THE SAME, AND CONTROL METHOD FOR THE SAME 失效
标题翻译： WENENLÄNGENABSTIMMBAREHALBLEITERLASERVORRICHTUNG，STEUEREINHEITDAFÜRUND STEUERVERFAHRENDAFÜR
公开(公告)号：EP2120301B1
公开(公告)日：2012-08-22
申请号：EP08721629.7
申请日：2008-03-07
申请人： Nippon Telegraph and Telephone Corporation
发明人： FUJIWARA, Naoki , ISHII, Hiroyuki , OOHASHI, Hiromi , OKAMOTO, Hiroshi
IPC分类号： H01S5/024 , H01S5/0625 , H01S5/22 , B82Y20/00
CPC分类号： H01S5/06256 , B82Y20/00 , H01S5/0014 , H01S5/024 , H01S5/02407 , H01S5/02461 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/0617 , H01S5/06808 , H01S5/22 , H01S5/2214 , H01S5/34306 , H01S5/4087 , H01S2301/173
摘要： Provided are a wavelength variable semiconductor laser element wherein wavelength drift is prevented, and a control apparatus and a control method for such semiconductor laser element. The wavelength variable semiconductor laser element is provided with an active region for oscillating a laser beam, and a wavelength variable region which shifts the wavelength of the oscillated laser beam. In the wavelength variable semiconductor laser element, a heat compensating region, which adjoins the wavelength variable region and converts most of the applied power into heat, is arranged so that the sum of power to be applied to the wavelength variable region and power to be applied to the heat compensating region is constantly fixed.
摘要翻译：目的是提供一种波长可调谐半导体激光器件，用于其的控制器及其控制方法，其防止波长漂移。波长可调谐半导体激光器件包括用于振荡激光束的有源区域和用于移动激光束波长的波长调谐区域。在该装置中，与波长调谐区域相邻设置用于将大部分输入的电力转换为热量的热补偿区域，输入到波长调谐区域的电力和输入到热补偿区域的电力之和始终保持不变。

6. 发明公开

EP2120301A1 WAVELENGTH VARIABLE SEMICONDUCTOR LASER ELEMENT, AND APPARATUS AND METHOD FOR CONTROLLING THE SAME 失效
标题翻译：波长可调半导体激光元件，及其控制器及其控制方法
公开(公告)号：EP2120301A1
公开(公告)日：2009-11-18
申请号：EP08721629.7
申请日：2008-03-07
申请人： Nippon Telegraph and Telephone Corporation
发明人： FUJIWARA, Naoki , ISHII, Hiroyuki , OOHASHI, Hiromi , OKAMOTO, Hiroshi
IPC分类号： H01S5/062 , H01S5/125
CPC分类号： H01S5/06256 , B82Y20/00 , H01S5/0014 , H01S5/024 , H01S5/02407 , H01S5/02461 , H01S5/0268 , H01S5/0425 , H01S5/0612 , H01S5/0617 , H01S5/06808 , H01S5/22 , H01S5/2214 , H01S5/34306 , H01S5/4087 , H01S2301/173
摘要： An object is to provide a wavelength tunable semiconductor laser device, a controller for the same and a control method for the same, which prevent wavelength drifts. The wavelength tunable semiconductor laser device includes an active region for oscillating a laser beam, and a wavelength tuning region for shifting a wavelength of the laser beam. In this device, a thermal compensation region for converting most of the inputted electric power to heat is provided adjacent to the wavelength tuning region, and the sum of an electric power inputted into the wavelength tuning region and an electric power inputted into the thermal compensation region is always kept constant.

7. 发明公开

EP2996266A1 OPTICAL MODULATOR DRIVER CIRCUIT AND OPTICAL TRANSMITTER 审中-公开
标题翻译：驱动电路用于光学调制器和光发射器
公开(公告)号：EP2996266A1
公开(公告)日：2016-03-16
申请号：EP14794331.0
申请日：2014-05-09
申请人： Nippon Telegraph and Telephone Corporation
发明人： NAGATANI, Munehiko , NOSAKA, Hideyuki , ITOH, Toshihiro , MURATA, Koichi , FUKUYAMA, Hiroyuki , SAIDA, Takashi , KAMEI, Shin , YAMAZAKI, Hiroshi , KIKUCHI, Nobuhiro , KOIZUMI, Hiroshi , NOGAWA, Masafumi , KATSURAI, Hiroaki , UZAWA, Hiroyuki , KATAOKA, Tomoyoshi , FUJIWARA, Naoki , KAWAKAMI, Hiroto , HORIKOSHI, Kengo , BOUVIER, Yves , YONEYAMA, Mikio , AISAWA, Shigeki , SUZUKI, Masahiro
IPC分类号： H04B10/516 , H03F1/00 , H03F3/45 , H03F3/60 , H03G3/18
CPC分类号： H04B10/541 , H03F1/223 , H03F1/32 , H03F3/04 , H03F3/082 , H03F3/195 , H03F3/245 , H03F3/45085 , H03F3/45089 , H03F3/45183 , H03F3/45188 , H03F3/602 , H03F2200/18 , H03F2200/219 , H03F2200/255 , H03F2200/27 , H03F2200/336 , H03F2200/411 , H03F2200/72 , H03F2200/75 , H03F2203/45258 , H03F2203/45374 , H03F2203/45392 , H03F2203/45454 , H03F2203/45466 , H03F2203/45471 , H03F2203/45486 , H03F2203/45496 , H03F2203/45504 , H03F2203/45506 , H03F2203/45702 , H03G1/0023 , H03G1/0082 , H03G1/0088 , H03G3/00 , H03G3/001 , H03G3/3084 , H04B10/5561 , H04B10/588
摘要： An optical modulator driver circuit (1) includes an amplifier (50, Q10, Q11, R10 - R13), and a current amount adjustment circuit (51) capable of adjusting a current amount of the amplifier (50) in accordance with a desired operation mode. The current amount adjustment circuit (51) includes at least two current sources (IS10) that are individually ON/OFF-controllable in accordance with a binary control signal representing the desired operation mode.

8. 发明授权

EP1610426B1 OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL SEMICONDUCTOR INTEGRATED CIRCUIT 有权
标题翻译：光半导体元件和集成光学半导体电路
公开(公告)号：EP1610426B1
公开(公告)日：2014-01-08
申请号：EP04724370.4
申请日：2004-03-30
申请人： NIPPON TELEGRAPH AND TELEPHONE CORPORATION
发明人： NUNOYA, Nobuhiro , SHIBATA, Yasuo , FUJIWARA, Naoki , KIKUCHI, Nobuhiro , TOMORI, Yuichi
IPC分类号： H01S5/068 , H01S5/12 , H01S5/125 , H01S5/183
CPC分类号： G02B6/12007 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/4202 , H01S5/026 , H01S5/06206 , H01S5/06256 , H01S5/0654 , H01S5/068 , H01S5/101 , H01S5/1017 , H01S5/1025 , H01S5/1085 , H01S5/1215 , H01S5/1221 , H01S5/124 , H01S5/125 , H01S5/2205 , H01S5/227 , H01S2301/173

9. 发明公开

EP3358684A1 SEMICONDUCTOR LASER DEVICE 有权
公开(公告)号：EP3358684A1
公开(公告)日：2018-08-08
申请号：EP16850677.2
申请日：2016-09-29
申请人： Nippon Telegraph and Telephone Corporation , Tohoku University
发明人： ISHII, Hiroyuki , FUJIWARA, Naoki , WATANABE, Kei , ITOH, Mikitaka , KASAI, Keisuke , NAKAZAWA, Masataka
IPC分类号： H01S5/022 , G01N21/01 , G02B6/12 , G02B6/42 , H01S5/026 , H01S5/12 , H01S5/125 , H01S5/50
摘要： An external cavity type laser has a configuration of narrowing a spectral linewidth in a semiconductor laser up to about 10 kHz, but since multiple components are required and they need to be assembled with high precision, there has been a problem that their control circuits are complicated. A configuration of a DFB laser-based wavelength tunable laser is well known, but long resonators have difficulty in forming uniform resonators due to production variations, thereby inducing limitation in narrowing the spectral linewidth in the DFB laser-based wavelength tunable laser as well. In the semiconductor laser device of the present invention, a semiconductor laser that oscillates in a single mode and a low-loss lightwave circuit using SiO 2 glass are arranged on the common substrate. The lightwave circuit is configured such that part of output light from the semiconductor laser propagates through a certain length of an optical path, and then is reflected by a reflector and is fed back to the semiconductor laser. Output light from the semiconductor laser and an input waveguide of the lightwave circuit can also be configured to be optically connected directly to each other. The present invention can provide a compact laser device with a narrowed spectral linewidth and stable wavelength controllability.

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