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41. 发明公开

EP3104411A1 SEMICONDUCTOR MODULE 无效
标题翻译： HALBLEITERMODUL
公开(公告)号：EP3104411A1
公开(公告)日：2016-12-14
申请号：EP15819776.4
申请日：2015-04-28
申请人： Shindengen Electric Manufacturing Co., Ltd.
发明人： IKEDA, Kosuke
IPC分类号： H01L25/07 , H01L23/28 , H01L23/29 , H01L25/18
CPC分类号： H01L23/49537 , H01L23/3142 , H01L23/3675 , H01L23/49562 , H01L23/49568 , H01L25/071 , H01L25/074
摘要： Semiconductor module (100) has a first member (10), a second member (20), a conductor column (31) extending in the vertical direction between the first member (10) and the second member (20) and a sealing resin (80) covering a first conductor layer (12) and a first power device (13) of the first member (10), a second conductor layer (22) and a second power device (23) of the second member (20) and the conductor column (31). Positions of the first power device (13) and the second power device (23) on the horizontal plane are shifted, the second conductor layer (22) is not provided in the vertical direction from a first connection part (46) connected to the first power device (13), and the first conductor layer (12) is not provided in the vertical direction from a second connection part (56), connected to the second power device (23), of the second power device (23).
摘要翻译：半导体模块（100）具有第一构件（10），第二构件（20），在第一构件（10）和第二构件（20）之间沿垂直方向延伸的导体柱（31）和密封树脂覆盖第一构件（10）的第一导体层（12）和第一功率器件（13），第二构件（20）的第二导体层（22）和第二功率器件（23）导体柱（31）。第一动力装置（13）和第二动力装置（23）在水平面上的位置偏移，第二导体层（22）不从与第一动力装置（13）和第二动力装置（23）连接的第一连接部功率器件（13），并且第一导体层（12）不从与第二电力设备（23）连接的第二连接部分（56）的垂直方向设置。

42. 发明公开

EP2929562A1 SEMICONDUCTOR ASSEMBLY 有权转让
标题翻译：半导体器件
公开(公告)号：EP2929562A1
公开(公告)日：2015-10-14
申请号：EP12799555.3
申请日：2012-12-07
申请人： ABB Technology Ltd.
发明人： EKWALL, Olle , DORE, Erik , DUGAL, Franc , SCHNELL, Raffael
IPC分类号： H01L25/07 , H01L25/16 , H01L23/40 , H02M7/00 , H05K7/14
CPC分类号： H01L23/4012 , H01L23/3675 , H01L23/4006 , H01L23/473 , H01L24/72 , H01L25/071 , H01L25/074 , H01L25/117 , H01L25/16 , H01L2023/4031 , H01L2023/4081 , H01L2023/4087 , H01L2924/1305 , H01L2924/13055 , H02M7/003 , H05K7/209 , H01L2924/00
摘要： A semiconductor assembly includes a stack with a semiconductor module and a cooler, wherein the semiconductor module is provided in contact with the cooler. A clamping assembly is adapted to exert a force on the two sides of the stack. The stack is provided with a through hole between the two sides thereof and a part of the clamping assembly including an electrically conductive part which extends through the through hole of the stack. Thereby, a compact mechanical arrangement is provided while obtaining improved electrical properties, such as lower inductance and more even current distribution.

43. 发明公开

EP2477221A3 Stacked half-bridge package with a common conductive leadframe 有权转让
标题翻译：堆叠半桥包与普通导电引线框
公开(公告)号：EP2477221A3
公开(公告)日：2014-09-17
申请号：EP11191634.2
申请日：2011-12-01
申请人： International Rectifier Corporation
发明人： Cho, Eung San , Cheah, Chuan , Sawle, Andrew N.
IPC分类号： H01L23/495
CPC分类号： H01L25/50 , H01L21/4853 , H01L23/3107 , H01L23/49524 , H01L23/49562 , H01L23/49575 , H01L24/36 , H01L24/37 , H01L24/40 , H01L24/41 , H01L25/071 , H01L2224/32245 , H01L2224/37147 , H01L2224/40095 , H01L2224/40245 , H01L2224/40247 , H01L2224/73263 , H01L2224/83801 , H01L2224/84801 , H01L2924/1033 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： According to an exemplary embodiment, a stacked half-bridge package includes a control transistor having a control drain for connection to a high voltage input, a control source coupled to an output terminal, and a control gate for being driven by a driver IC. The stacked half-bridge package further includes a sync transistor having a sync drain for connection to the output terminal, a sync source coupled to a low voltage input, and a sync gate for being driven by the driver IC. The control and sync transistors are stacked on opposite sides of a common conductive leadframe with the common conductive leadframe electrically and mechanically coupling the control source with the sync drain. The common conductive leadframe thereby serves as the output terminal.

44. 发明授权

EP2308274B1 LEITERPLATINE MIT ELEKTRONISCHEM BAUELEMENT 有权
标题翻译：的电子部件根据董事会
公开(公告)号：EP2308274B1
公开(公告)日：2012-05-09
申请号：EP09780632.7
申请日：2009-07-15
申请人： Robert Bosch GmbH
发明人： KUGLER, Andreas , VOIGTLAENDER, Klaus , KIMMICH, Peter
IPC分类号： H05K1/18 , H05K1/02 , H05K1/03
CPC分类号： H05K1/185 , H01L23/427 , H01L23/473 , H01L23/49822 , H01L23/4985 , H01L23/5389 , H01L24/19 , H01L24/24 , H01L24/25 , H01L24/82 , H01L24/96 , H01L25/071 , H01L25/072 , H01L25/074 , H01L2224/04105 , H01L2224/24137 , H01L2224/2518 , H01L2924/01013 , H01L2924/01029 , H01L2924/01047 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/30107 , H01L2924/3025 , H05K1/0206 , H05K1/0272 , H05K1/162 , H05K1/189 , H05K3/4614 , H05K3/4644 , H05K2201/0379 , H05K2201/064 , H05K2201/066 , H05K2201/09745 , H05K2201/10166 , H05K2203/1469
摘要： The invention relates to a printed circuit board (1) with a sheet-like board substrate (2) and with at least one electronic component (3), wherein it is provided that the component (3) is arranged within the board substrate (2). The invention also relates to a corresponding method for producing the printed circuit board.

45. 发明公开

EP2112873A3 Elektrische Funktionseinheit und Verfahren zur Herstellung einer dreidimensionalen elektrischen Funktionseinheit 审中-公开
标题翻译：用于产生三维电功能单元电功能单元和方法
公开(公告)号：EP2112873A3
公开(公告)日：2011-11-09
申请号：EP09100248.5
申请日：2009-04-23
申请人： Continental Automotive GmbH
发明人： Baur, Frank , Götte, Carsten
IPC分类号： H05K7/14 , H05K1/00 , H01L23/12 , H01L23/16 , H01L23/31 , H01L25/00 , H05K5/00
CPC分类号： H05K7/1444 , H01L23/057 , H01L23/13 , H01L23/24 , H01L23/49861 , H01L23/5389 , H01L24/24 , H01L24/82 , H01L25/071 , H01L25/072 , H01L2924/01068 , H01L2924/14 , H05K1/0284 , H01L2924/00
摘要： Eine Funktionseinheit, insbesondere zum Einbau in ein Fahrzeug geeignet, umfasst einen räumlichen Körper (1, 300) mit einem nicht leitenden Grundmaterial und wenigstens zwei in dem Körper (1, 300) angeordnete Halbleiterkörper (20, 21). Diese umfassen jeweils eine integrierte Schaltung und sind von einem nicht leitenden Material (15) umschlossen. Ferner weisen sie Kontaktstellen auf ihrer Oberfläche auf. Wenigstens zwei in dem Körper (1, 300) angeordnete Leiterbahnen (12, 13, 301) sind mit den Kontaktstellen verbunden. Wenigstens eine Leiterbahn verbindet Kontaktstellen der wenigstens zwei Halbleiterkörper miteinander.
摘要翻译：功能单元具有与非导电性基材中的主体，其具有集成电路和由非导电性材料被封闭布置在空间体，和两个半导体本体（20,21），并具有接触点在其表面上，两个导电条带（12,13）被安排在所述主体，其与所述接触点相连接。的导电条互连两个半导体本体的接触点。一个独立的claimsoft包括用于生产三维功能单元的方法。

46. 发明授权

EP1909329B1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：EP1909329B1
公开(公告)日：2011-11-02
申请号：EP06729670.7
申请日：2006-03-22
申请人： SANKEN ELECTRIC CO., LTD.
发明人： TORII, Katsuyuki, c/o Sanken Electric Co., Ltd.
IPC分类号： H01L29/739 , H01L27/04 , H01L25/04 , H01L27/00 , H01L27/088 , H01L29/78
CPC分类号： H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/071 , H01L27/0688 , H01L29/7395 , H01L2224/05554 , H01L2224/0603 , H01L2224/32145 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device is reduced in size without connecting an external diode, and the heat caused by current is prevented from being concentrated on the central part of the semiconductor substrate. First base regions (16) of sequentially stacked first and second IGBTs (1, 2) each have a peripheral region (26) neighboring the side surface (31c) of a semiconductor substrate (31). Each of the IGBTs (1, 2) includes a p-type peripheral base region (27) forming a diode (21) adjacently to the peripheral region (26) of the n-type first base region (16) and a diode electrode (24) formed on the upper surface (26a) of the peripheral region (26) of the first base region (16). The diode electrode (24) and collector electrode (23) of each of the IGBTs (1, 2) are electrically connected with each other. When the semiconductor device is on, current flows toward the central part of the semiconductor substrate (31) apart from the side surface (31c). When the semiconductor is off, if reverse current occurs, it flows in the vicinity of the side surface (31c) of the semiconductor substrate (31).
摘要翻译：半导体器件在不连接外部二极管的情况下尺寸减小，并且防止了由电流引起的热量集中在半导体衬底的中心部分。顺序堆叠的第一和第二IGBT（1,2）的第一基极区（16）各自具有与半导体衬底（31）的侧表面（31c）相邻的外围区（26）。每个IGBT（1,2）包括形成与n型第一基极区（16）的外围区（26）相邻的二极管（21）的p型外围基极区（27）和二极管电极形成在第一基区（16）的周边区域（26）的上表面（26a）上。每个IGBT（1,2）的二极管电极（24）和集电极电极（23）彼此电连接。当半导体器件导通时，电流流向远离侧表面（31c）的半导体衬底（31）的中心部分。当半导体断开时，如果发生反向电流，则其流入半导体基板（31）的侧表面（31c）附近。

47. 发明授权

EP1932407B1 ELEKTRISCHES MODUL 有权
公开(公告)号：EP1932407B1
公开(公告)日：2011-09-21
申请号：EP06775740.1
申请日：2006-07-26
申请人： Curamik Electronics GmbH
发明人： SCHULZ-HARDER, Jürgen , MEYER, Andreas
IPC分类号： H05K7/20 , H01L23/473
CPC分类号： H05K7/20254 , F28F2210/02 , H01L23/4012 , H01L23/473 , H01L24/48 , H01L25/071 , H01L25/072 , H01L2224/48137 , H01L2924/00014 , H01L2924/01068 , H01L2924/1301 , H01L2924/13033 , H01L2924/13055 , H01L2924/1627 , H01L2924/181 , H01L2924/00 , H01L2224/45099
摘要： The invention relates to a module with a number electrical or electronic components or switching circuits provided on a common cooler structure flowed through by a cooling medium. The entire cooler structure is comprised of at least to plate-shaped coolers, which are arranged parallel to one another in an interspaced manner and which are flowed through by the cooling medium.
摘要翻译：本发明涉及一种具有多个电气或电子部件或设置在由冷却介质流过的公共冷却器结构上的开关电路的模块。整个冷却器结构由至少两个板状冷却器组成，板状冷却器以间隔方式彼此平行地布置并且由冷却介质流过。

48. 发明公开

EP2051301A4 SEMICONDUCTOR DEVICE 无效
公开(公告)号：EP2051301A4
公开(公告)日：2010-06-16
申请号：EP07791719
申请日：2007-07-25
申请人： HONDA MOTOR CO LTD
发明人： TAKANO FUMITOMO , WATANABE SHINYA , AIBA TSUKASA , NAKASHIMA JOJI , OTSUKA HIROSHI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L25/071 , H01L25/18 , H01L2224/48091 , H01L2224/48247 , H01L2224/49113 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H01L2924/00014 , H01L2924/00

49. 发明授权

EP1005089B1 Dispositif électronique de puissance 有权
标题翻译：功率半导体
公开(公告)号：EP1005089B1
公开(公告)日：2007-12-19
申请号：EP99402889.2
申请日：1999-11-22
申请人： ALSTOM Holdings
发明人： Mermet-Guyennet, Michel
IPC分类号： H01L25/07
CPC分类号： H01L25/071 , H01L24/33 , H01L2924/1305 , H01L2924/13055 , H01L2924/3011 , H01L2924/00

50. 发明公开

EP1316998A3 Bumpless Chip Scale Device (CSP) and board assembly 审中-公开
标题翻译：驼峰很多CSP装配和PCB组装
公开(公告)号：EP1316998A3
公开(公告)日：2005-02-02
申请号：EP02102521.8
申请日：2002-10-31
申请人： Texas Instruments Incorporated
发明人： Zuniga-Ortiz, Edgar R. , Koduri, Sreenivasan K.
IPC分类号： H01L23/485
CPC分类号： H01L24/10 , H01H37/761 , H01L23/3114 , H01L23/3128 , H01L23/34 , H01L23/4334 , H01L24/01 , H01L24/05 , H01L24/13 , H01L24/81 , H01L25/071 , H01L2224/0401 , H01L2224/05599 , H01L2224/13 , H01L2224/131 , H01L2224/16225 , H01L2224/81208 , H01L2224/81801 , H01L2224/81894 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/12043 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H02K11/046 , H02K11/25 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip (201) having a planar active surface (201a) including an integrated circuit; the circuit has metallization patterns (202) including a plurality of contact pads (202a). Each of these contact pads has an added conductive layer (205,206,207) on the circuit metallization. This added layer has a conformal surface adjacent the chip and a planar outer surface, and this outer surface is suitable to form metallurgical bonds without melting. The chip contact pads may have a distribution such that an area portion of the active chip surface is available for attaching a thermally conductive plate; this plate has a thickness compatible with the thickness of the conductive pad layer.

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