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41. 发明公开

EP1022352A3 Method for forming metal interconnects with increased electromigration lifetime 审中-公开
标题翻译：一种用于生产金属的化合物具有增加的电迁移寿命过程
公开(公告)号：EP1022352A3
公开(公告)日：2002-01-02
申请号：EP99125723.9
申请日：1999-12-23
申请人： Infineon Technologies North America Corp. , International Business Machines Corporation
发明人： Schnabel, Rainer Florian , Hoinkis, Mark , Iggulden, Roy , Clevenger, Lawrence , Filippi, Ronald , Weber, Stefan , Weigand, Peter
IPC分类号： C23C14/32 , H01L21/3205 , H01L21/768 , H01L21/285
CPC分类号： H01L21/76864 , H01L21/2855 , H01L21/76841
摘要： A reliable interconnect for semiconductor integrated circuits is provided. The interconnect comprises a conductor and a liner formed thereunder by an ionized metal plasma physical vapor deposition process. The liner reduces the angular distribution as well as reducing the size of the grains in the conductor, which results in an increase in electromigration lifetime.

42. 发明授权

EP0598422B1 Method of forming a Ti and a TiN layer on a semiconductor body by a sputtering process, comprising an additional step of cleaning the target 失效
标题翻译：通过溅射法在半导体本体形成Ti和TiN层，与目标的纯化的附加步骤的方法
公开(公告)号：EP0598422B1
公开(公告)日：2000-09-13
申请号：EP93202840.0
申请日：1993-10-06
申请人： Koninklijke Philips Electronics N.V.
发明人： Wolters, Robertus A.M., c/o INT. OCTROOIBUREAU BV , Swart, Edwin Tijibbe, c/o INT. OCTROOIBUREAU BV
IPC分类号： H01L21/3205 , C23C14/34 , C23C14/00 , C23C14/54 , H01J37/34
CPC分类号： H01L21/76843 , C23C14/0073 , C23C14/022 , C23C14/0641 , C23C14/165 , H01L21/76841

43. 发明公开

EP0915178A2 Sputtering target of highly purified titanium 失效
标题翻译：高纯度的钛的溅射靶
公开(公告)号：EP0915178A2
公开(公告)日：1999-05-12
申请号：EP98204068.5
申请日：1991-02-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ishigami, Takashi , Obata, Minoru , Kawai, Mituo , Satou, Michio , Yamanobe, Takashi , Maki, Toshihiro , Yagi, Noriaki , Ando, Shigeru
IPC分类号： C22B34/10 , C23C14/34 , H01L23/532
CPC分类号： C22B34/1272 , C22B9/22 , C22B34/10 , C22B34/129 , C22B34/1295 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： This is a sputtering target of highly purified titanium for manufacturing a titanium film having a specific resistance of not more than 105 cm, when measured about the titanium film of a thickness of 0.2m, which is formed on a polycrystal silicon substrate by the steps of exhausting a film-forming chamber including the substrate and the target to a pressure of 1 x 10 -5 Torr, subsequently introducing an Ar gas into the film-forming chamber up to a pressure of 5 x 10 -3 Torr, and sputtering the sputtering target on the substrate at a film-forming speed of 2m/hour by the DC magnetron sputtering method.

44. 发明公开

EP0397131A2 Method of manufacturing a contact in semiconductor devices 失效
标题翻译：在Halbleiterbauelementen的Verfahren zur Herstellung von Kontakten。
公开(公告)号：EP0397131A2
公开(公告)日：1990-11-14
申请号：EP90108719.7
申请日：1990-05-09
申请人： FUJITSU LIMITED
发明人： Ohba, Takayuki, c/o FUJITSU LIMITED Patent Dept.
IPC分类号： H01L21/285 , C23C16/02 , C23C16/08 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/76802 , H01L21/76841 , H01L21/76843 , H01L21/76879
摘要： A method of forming a contact in a semiconductor device involving cleaning the surface of a substrate exposed in a contact hole, formed for example through an SiO₂ film on the substrate, using the reducing effect of a nitrogen hydride or nitrogen hydride derivative gas, for example N₂H₄ gas. Thereafter, for example, a TiN barrier may be formed by a CVD method using a mixed gas of N₂H₄ and TiCl₄ (the surface not being exposed to air) and then a tungsten contact layer formed thereon by a CVD method using a mixed gas of N₂H₄ and WF₆. Alternatively, a TiN layer may be formed by a CVD method on a tungsten contact layer formed by a CVD method direct on the substrate.
摘要翻译：在半导体器件中形成接触的方法，其包括例如通过氮化氢或氮化氢衍生气体的还原作用，例如通过在衬底上形成的SiO 2膜来形成暴露在接触孔中的衬底的表面。 N2H4气。此后，例如，可以通过使用N 2 H 4和TiCl 4的混合气体（表面不暴露于空气）的CVD法形成TiN阻挡层，然后通过CVD法使用N2H4的混合气体形成钨接触层和WF6。或者，可以通过CVD法在直接在衬底上通过CVD法形成的钨接触层上形成TiN层。

45. 发明公开

EP3031075A4 CONDUCTIVE INTERCONNECT STRUCTURES INCORPORATING NEGATIVE THERMAL EXPANSION MATERIALS AND ASSOCIATED SYSTEMS, DEVICES, AND METHODS 有权
标题翻译：具有结构负热膨胀材料及相关系统，设备和方法导电连接
公开(公告)号：EP3031075A4
公开(公告)日：2017-03-15
申请号：EP14834233
申请日：2014-07-30
申请人： MICRON TECHNOLOGY INC
发明人： LI HONGQI , JINDAL ANURAG , LU JIN , RAMALINGAM SHYAM
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76879 , H01L21/2885 , H01L21/76841 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： Semiconductor devices having interconnects incorporating negative expansion (NTE) materials are disclosed herein. In one embodiment a semiconductor device includes a substrate having an opening that extends at least partially through the substrate. A conductive material having a positive coefficient of thermal expansion (CTE) partially fills the opening. A negative thermal expansion (NTE) having a negative CTE also partially fills the opening. In one embodiment, the conductive material includes copper and the NTE material includes zirconium tungstate.
摘要翻译：具有互连掺入负膨胀的半导体器件（NTE）的材料是在盘游离缺失。在一个实施方式的半导体装置包括具有上开口的基板那样至少部分地穿过所述衬底延伸。具有热膨胀系数（CTE）的正系数的导电材料部分地填充所述开口。具有负CTE的负热膨胀（NTE），从而部分地填充所述开口。在一个，该实施例的导电材料包括铜和NTE材料包括钨酸锆。

46. 发明公开

EP3000127A1 METAL PVD-FREE CONDUCTING STRUCTURES 有权
标题翻译： PVD金属色免费导体结构
公开(公告)号：EP3000127A1
公开(公告)日：2016-03-30
申请号：EP14739997.6
申请日：2014-05-20
申请人： Invensas Corporation
发明人： WOYCHIK, Charles , UZOH, Cyprian Emeka , NEWMAN, Michael , CASKEY, Terrence , MONADGEMI, Pezhman
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , H01L21/32055 , H01L21/76802 , H01L21/76841 , H01L21/76858 , H01L21/76873 , H01L21/76874 , H01L21/76898 , H01L23/147 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L23/49866 , H01L23/525 , H01L23/53233 , H01L23/53238 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).

47. 发明公开

EP2973681A1 LOCAL INTERCONNECT STRUCTURES FOR HIGH DENSITY 有权转让
标题翻译：本地连接结构用于高密度
公开(公告)号：EP2973681A1
公开(公告)日：2016-01-20
申请号：EP14728362.6
申请日：2014-03-11
申请人： Qualcomm Incorporated
发明人： ZHU, John Jianhong , NALLAPATI, Giridhar , CHIDAMBARAM, Pr
IPC分类号： H01L21/8234 , H01L21/768 , H01L27/02 , H01L27/088
CPC分类号： H01L23/528 , H01L21/76841 , H01L21/76895 , H01L21/823475 , H01L21/823481 , H01L27/0207 , H01L27/088 , H01L2924/0002 , H01L2924/00
摘要： A local interconnect structure is provided that includes a gate- directed local interconnect (435) coupled to an adjacent gate layer (425) through a diffusion-directed local interconnect (445).

48. 发明公开

EP2902394A1 Vanadium organic precursors and their use for vapor phase deposition of vanadium containing films 审中-公开
标题翻译：有机钒前体和它们对含钒膜的气相涂层使用
公开(公告)号：EP2902394A1
公开(公告)日：2015-08-05
申请号：EP14305114.2
申请日：2014-01-29
申请人： L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE
发明人： Correia Anacleto, Antony , Lachaud, Christophe , Pinchart, Audrey , Zauner, Andreas
IPC分类号： C07F9/00 , C23C16/455 , H01L21/285
CPC分类号： C07F9/005 , C23C16/18 , C23C16/34 , C23C16/45553 , H01L21/28556 , H01L21/28562 , H01L21/76841
摘要： Compounds of formula (I) : M(R 1 CS 2 )R 2 R 3 NR 6

R 1 , R 2 , R 3 are organic ligands being independently selected in H, C1-C4 alkyl group linear or branched, aryl group, silyl group, alkylamine group, alkylsylilamine group.
R 6 is an organic ligand being independently selected in H, C1-C4 alkyl group linear or branched, aryl group, silyl group, alkylsylilamine group.
M is Vanadium.
摘要翻译：式（I）的化合物：M（R 1 CS 2）R 2 R 3 NR 6 R 1，R 2，R 3是有机配体正在H，C1-C4烷基线性独立选择的或支链的，芳基，甲硅烷基基，烷基胺基团，alkylsylilamine基。 R 6为在H，C1-C4烷基直链被独立选择的或支链的有机配体，芳基，甲硅烷基，alkylsylilamine基。 M是钒。

49. 发明公开

EP2171845A4 METHOD FOR FORMING AN ACOUSTIC MIRROR WITH REDUCED METAL LAYER ROUGHNESS AND RELATED STRUCTURE 审中-公开
标题翻译：制法一个声镜子具有减少METALLSCHICHTRAUIGKEIT和相关结构
公开(公告)号：EP2171845A4
公开(公告)日：2014-08-27
申请号：EP08768849
申请日：2008-07-01
申请人： AVAGO TECHNOLOGIES WIRELESS IP
发明人： BARBER BRADLEY P , GEHLERT PAUL P , SHEPARD CHRISTOPHER F
IPC分类号： H01L21/30 , H03H9/17
CPC分类号： H01L21/76841 , H01L21/32051 , H03H9/175 , Y10T428/12535 , Y10T428/31

50. 发明公开

EP2521165A1 WIRING STRUCTURE AND METHOD FOR FORMING SAME 有权
标题翻译： VERDRAHTUNGSSTRUKTUR UND HERSTELLUNGSVERFAHRENDAFÜR
公开(公告)号：EP2521165A1
公开(公告)日：2012-11-07
申请号：EP09852805.2
申请日：2009-12-28
申请人： Fujitsu Limited
发明人： KANKI, Tsuyoshi , NAKATA, Yoshihiro , KOBAYASHI, Yasushi
IPC分类号： H01L21/3205 , H01L23/12 , H01L23/52 , H05K3/24
CPC分类号： H01L21/76877 , H01L21/02068 , H01L21/02071 , H01L21/02074 , H01L21/288 , H01L21/321 , H01L21/76834 , H01L21/76841 , H01L21/76852 , H01L21/76874 , H01L21/76883 , H01L21/76885 , H01L23/53238 , H01L2924/00 , H01L2924/0002 , H05K3/24
摘要： [Object] To provide an interconnection structure and a method of forming the same, the interconnection structure capable of avoiding an increase in leakage current or an increase in interconnection resistance caused by oxidation, being less likely to have electromigration occur therein, and having a higher reliability than the conventional ones.
[Solving Means] After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu-N-R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu-N-R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.
摘要翻译：为了提供互连结构及其形成方法，能够避免泄漏电流增加或由氧化引起的互连电阻增加的互连结构不太可能发生电迁移，并且具有较高的可靠性比传统的。 [解决方案]在基板上形成铜互连之后，通过进行酸清洗来激活铜互连的表面。此后，将基板浸入BTA（苯并三唑）水溶液中以形成覆盖铜互连表面的保护膜。此时，在铜互连的表面的晶界部分中形成Cu-N-R键（R为有机基团）。此后，通过进行碱性清洗除去保护膜。即使在保护膜被去除之后，Cu-N-R键也保留在铜互连表面的晶界部分中。随后，对铜互连的表面进行激活处理，然后通过用NiP或CoWP对铜互连的表面进行化学电镀来形成阻挡层。

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