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1. 发明授权

EP0915177B1 Highly purified hafnium and sputtering target using the same 失效
标题翻译：高纯度铪及其作为溅射靶使用
公开(公告)号：EP0915177B1
公开(公告)日：2003-05-21
申请号：EP98204065.1
申请日：1991-02-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ishigami, Takashi , Obata, Minoru , Kawai, Mituo , Satou, Michio , Yamanobe, Takashi , Maki, Toshihiro , Yagi, Noriaki , Ando, Shigeru
IPC分类号： C22B34/10 , C23C14/34 , H01L23/532
CPC分类号： C22B34/1272 , C22B9/22 , C22B34/10 , C22B34/129 , C22B34/1295 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002 , H01L2924/00

2. 发明公开

EP0374931A3 Sputtering target and method of manufacturing the same 失效
标题翻译：溅射目标及其制造方法
公开(公告)号：EP0374931A3
公开(公告)日：1991-05-15
申请号：EP89123704.2
申请日：1989-12-21
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Satou, Michio , Yamanobe, Takashi , Kawai, Mitsuo , Kawaguchi, Tatsuzo , Mitsuhashi, Kazihiko , Mizutani, Toshiaki
IPC分类号： C04B35/58 , C23C14/34
CPC分类号： C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414
摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi x including a mixture composition of an MSi₂ phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi₂ phase and the Si phase. The value X in the composition formula MSi x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi₂ phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.

3. 发明公开

EP0915178A3 Sputtering target of highly purified titanium 失效
标题翻译：高纯钛的溅射靶材
公开(公告)号：EP0915178A3
公开(公告)日：1999-05-26
申请号：EP98204068.5
申请日：1991-02-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ishigami, Takashi , Obata, Minoru , Kawai, Mituo , Satou, Michio , Yamanobe, Takashi , Maki, Toshihiro , Yagi, Noriaki , Ando, Shigeru
IPC分类号： C22B34/10 , C23C14/34 , H01L23/532
CPC分类号： C22B34/1272 , C22B9/22 , C22B34/10 , C22B34/129 , C22B34/1295 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： This is a sputtering target of highly purified titanium for manufacturing a titanium film having a specific resistance of not more than 105 cm, when measured about the titanium film of a thickness of 0.2m, which is formed on a polycrystal silicon substrate by the steps of exhausting a film-forming chamber including the substrate and the target to a pressure of 1 x 10 -5 Torr, subsequently introducing an Ar gas into the film-forming chamber up to a pressure of 5 x 10 -3 Torr, and sputtering the sputtering target on the substrate at a film-forming speed of 2m/hour by the DC magnetron sputtering method.
摘要翻译：这是一种用于制造具有不大于105cm的电阻率的钛膜的高纯钛的溅射靶，当测量厚度为0.2微米的钛膜时，其通过以下步骤在多晶硅基板上形成：将包括基板和靶材的成膜室排气至1×10 -5乇的压力，随后将Ar气体引入膜形成室直到5×10 -3乇的压力，并且溅射溅射通过DC磁控管溅射方法以2m /小时的成膜速度靶向基板上。

4. 发明公开

EP0915178A2 Sputtering target of highly purified titanium 失效
标题翻译：高纯度的钛的溅射靶
公开(公告)号：EP0915178A2
公开(公告)日：1999-05-12
申请号：EP98204068.5
申请日：1991-02-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ishigami, Takashi , Obata, Minoru , Kawai, Mituo , Satou, Michio , Yamanobe, Takashi , Maki, Toshihiro , Yagi, Noriaki , Ando, Shigeru
IPC分类号： C22B34/10 , C23C14/34 , H01L23/532
CPC分类号： C22B34/1272 , C22B9/22 , C22B34/10 , C22B34/129 , C22B34/1295 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： This is a sputtering target of highly purified titanium for manufacturing a titanium film having a specific resistance of not more than 105 cm, when measured about the titanium film of a thickness of 0.2m, which is formed on a polycrystal silicon substrate by the steps of exhausting a film-forming chamber including the substrate and the target to a pressure of 1 x 10 -5 Torr, subsequently introducing an Ar gas into the film-forming chamber up to a pressure of 5 x 10 -3 Torr, and sputtering the sputtering target on the substrate at a film-forming speed of 2m/hour by the DC magnetron sputtering method.

5. 发明授权

EP0374931B1 Sputtering target and method of manufacturing the same 失效
标题翻译：溅射靶材和工艺及其制备方法。
公开(公告)号：EP0374931B1
公开(公告)日：1994-03-02
申请号：EP89123704.2
申请日：1989-12-21
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Satou, Michio , Yamanobe, Takashi , Kawai, Mitsuo , Kawaguchi, Tatsuzo , Mitsuhashi, Kazihiko , Mizutani, Toshiaki
IPC分类号： C04B35/58 , C23C14/34
CPC分类号： C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414

6. 发明公开

EP0374931A2 Sputtering target and method of manufacturing the same 失效
标题翻译： Sputtertarget和Verfahren zu seiner Herstellung。
公开(公告)号：EP0374931A2
公开(公告)日：1990-06-27
申请号：EP89123704.2
申请日：1989-12-21
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Satou, Michio , Yamanobe, Takashi , Kawai, Mitsuo , Kawaguchi, Tatsuzo , Mitsuhashi, Kazihiko , Mizutani, Toshiaki
IPC分类号： C04B35/58 , C23C14/34
CPC分类号： C04B35/58092 , C04B35/645 , C04B35/65 , C23C14/3414
摘要： A sputtering target formed of a refractory metallic silicide having a composition MSi x including a mixture composition of an MSi₂ phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi₂ phase and the Si phase. The value X in the composition formula MSi x is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi₂ phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.
摘要翻译：由具有组成为MSix的难熔金属硅化物形成的溅射靶，所述组合物包括颗粒形式的MSi2相的混合组成（M：选自W，Mo，Ti，Zr，Hf， Ni和Ta），以及作为基体相的Si相。在MSi2相和Si相之间的界面处形成具有预定厚度的界面层。组成式MSix中的值X设定在2.0至4.0的范围内，并且在MSi2相和Si相之间形成的界面层的厚度，组成的分散性，靶的密度比，电将Si相的电阻率和表面粗糙度设定为预定值。通过使用该目标，可以稳定地制造组合物分布均匀的均匀的高品质薄膜。

7. 发明公开

EP0915177A1 Highly purified metal and sputtering target using the same 失效
标题翻译： Hochreine Metalle und deren Verwendung als Sputtertarget
公开(公告)号：EP0915177A1
公开(公告)日：1999-05-12
申请号：EP98204065.1
申请日：1991-02-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ishigami, Takashi , Obata, Minoru , Kawai, Mituo , Satou, Michio , Yamanobe, Takashi , Maki, Toshihiro , Yagi, Noriaki , Ando, Shigeru
IPC分类号： C22B34/10 , C23C14/34 , H01L23/532
CPC分类号： C22B34/1272 , C22B9/22 , C22B34/10 , C22B34/129 , C22B34/1295 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： This is a highly purified metal material comprising one metal selected from the group consisted of titanium, zirconium and halfnium. The highly purified metal material has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni and Cr contents not more than 10 ppm and each of Na and K contents not more than 0.1 ppm. The highly purified metal material is obtained by either purifying crude metal material by the iodite decomposion method or surface treating crude metal material to remove a contaminated layer existing on the surface thereof and then melting The surface treated material with electron bean in a high vacuum.
摘要翻译：这是一种高纯度金属，其包含选自钛，锆和铪中的一种金属。高纯度金属的Al含量不大于10ppm。氧含量大于250ppm，Fe，Ni和Cr各自不超过10ppm，Na和K的含量均不大于0.1ppm。通过用碘化法纯化粗金属或用粗金属表面处理以除去其表面上存在的污染层，然后在高真空中熔化具有电子束的表面处理材料，可获得高度纯化的金属。

8. 发明公开

EP0915176A1 Wiring network and semiconductor package 失效
标题翻译： Verdrahtungsnetz und Halbleiteraufbau
公开(公告)号：EP0915176A1
公开(公告)日：1999-05-12
申请号：EP98204064.4
申请日：1991-02-15
申请人： KABUSHIKI KAISHA TOSHIBA
发明人： Ishigami, Takashi , Obata, Minoru , Kawai, Mituo , Satou, Michio , Yamanobe, Takashi , Maki, Toshihiro , Yagi, Noriaki , Ando, Shigeru
IPC分类号： C22B34/10 , C23C14/34 , H01L23/532
CPC分类号： C22B34/1272 , C22B9/22 , C22B34/10 , C22B34/129 , C22B34/1295 , C23C14/3414 , H01L21/28518 , H01L21/2855 , H01L21/76841 , H01L23/53257 , H01L2924/0002 , H01L2924/00
摘要： This is a wiring network for forming a semiconductor element, the wiring network being formed by film-forming using a sputtering target comprising a high purified metal material selected from the group consisting of Ti, Zr and Hf, wherein the high purified metal material has an Al content of not more than 10ppm and each of Na and K contents of not more than 0.1ppm.
摘要翻译：这是用于形成半导体元件的布线网络，所述布线网络使用包括选自Ti，Zr和Hf的高纯金属材料的溅射靶通过成膜形成，其中所述高纯度金属材料具有 Al含量不超过10ppm，Na和K含量不超过0.1ppm。

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